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    • 7. 发明申请
    • Manufacturing process of rare earth activated alkaline earth metal fluorohalide stimulable phosphor
    • 稀土活化碱土金属氟卤素可激发荧光粉的制造工艺
    • US20060108565A1
    • 2006-05-25
    • US11281038
    • 2005-11-17
    • Hideaki WakamatsuHiroyuki Nabeta
    • Hideaki WakamatsuHiroyuki Nabeta
    • C09K11/61
    • C09K11/7733
    • Provided is a manufacturing process of a rare earth activated alkaline earth metal fluorohalide stimulable phosphor exhibiting improved productivity accompanied with an X-ray resistance property against repeating use upon X-ray exposure. Also disclosed is a liquid phase manufacturing process of a rare earth activated alkaline earth metal fluorohalide stimulable phosphor represented in following Formula (1) possessing the steps of adding an aqueous solution containing inorganic fluoride into a reaction mother liquor in which barium halide is dissolved at a reaction temperature of 85-100° C., to form a crystalline precipitate of a precursor of a rare earth activated alkaline earth metal fluorohalide stimulable phosphor, and removing a solvent from the reaction mother liquor, wherein a precursor of a stimulable phosphor is prepared via the foregoing steps conducted in parallel. Ba(1-x)M2(x)FBr(y)I(1-y):aM1, bLn, cO  Formula (I)
    • 提供了一种稀土活化的碱土金属氟卤化物可刺激荧光体的制造方法,其具有在X射线曝光时反复使用的X射线电阻性能的提高的生产率。 还公开了下述式(1)所示的稀土类活化碱土金属氟卤化物可刺激性荧光体的液相制造方法,具有以下步骤:将含有无机氟化物的水溶液加入到其中溶解有卤化钡的反应母液中 反应温度为85-100℃,以形成稀土活化的碱土金属氟卤化物可刺激磷光体的前体的结晶沉淀物,并从反应母液中除去溶剂,其中可刺激磷光体的前体通过 上述步骤并行进行。 (1-x)<2>(x)在线公式描述=“在线公式”end =“lead” (1)y(1-y):aM 1,bLn,c 0式(I)<α line-formula description =“In-line Formulas”end =“tail”?>
    • 8. 发明申请
    • Light Emitting Diode and Method for Manufacturing Same
    • 发光二极管及其制造方法相同
    • US20100155738A1
    • 2010-06-24
    • US11884398
    • 2006-02-06
    • Hiroyuki NabetaHideaki Wakamatsu
    • Hiroyuki NabetaHideaki Wakamatsu
    • H01L33/00
    • H01L33/42H01L33/32
    • This invention provides a light emitting diode in which a thick transparent conductive electrode is formed on an emitting side of GaN based semiconductor light emitting element, and a light emitting efficiency of the GaN semiconductor light emitting element is improved. Further, it provides a manufacturing method of the light emitting diode by which a thick transparent electrode film of the light emitting diode is effectively formed. A light emitting diode which emits light in a blue or an ultraviolet region comprising a substrate and a light emitting layer thereon comprising at least an n-type GaN based semiconductor layer, a p-type GaN based semiconductor layer, and a GaN based semiconductor sandwiched between them, wherein a transparent conductive film having a thickness of 1-100 μm is provided on the light emitting layer.
    • 本发明提供了一种发光二极管,其中在GaN基半导体发光元件的发射侧形成厚的透明导电电极,并提高了GaN半导体发光元件的发光效率。 此外,它提供了一种发光二极管的制造方法,通过该方法可以有效地形成发光二极管的厚的透明电极膜。 发射蓝色或紫外线区域的发光二极管,其包括基板及其上的发光层,所述发光二极管至少包括n型GaN基半导体层,p型GaN基半导体层和夹在中间的GaN基半导体层 在它们之间,其中在发光层上设置有厚度为1-100μm的透明导电膜。
    • 9. 发明授权
    • White light emitting diode (white LED) and method of manufacturing white LED
    • 白光发光二极管(白光LED)及制造白光LED的方法
    • US07592192B2
    • 2009-09-22
    • US10590589
    • 2005-02-24
    • Hiroyuki NabetaHideaki Wakamatsu
    • Hiroyuki NabetaHideaki Wakamatsu
    • H01L21/20
    • H01L33/501C09K11/7774H01L2933/0041Y02B20/181
    • Disclosed is a white light emitting diode possessing a phosphor layer to convert blue light into yellow light, provided on a blue light emitting diode, wherein the phosphor layer possesses an inorganic compound containing a phosphor, and particularly a white light emitting diode, wherein this inorganic compound is a phosphor. Also disclosed is a method of manufacturing a white light emitting diode, possessing a step of forming the foregoing phosphor layer made of an inorganic compound containing a phosphor via an aerosol deposition method. A white light emitting diode exhibiting high reliability and longer operating life, which is prepared via use of a blue LED element, can be provided by what is described above.
    • 公开了一种白色发光二极管,其具有将蓝色光转换成黄色光的荧光体层,设置在蓝色发光二极管上,其中荧光体层具有含有荧光体的无机化合物,特别是白色发光二极管,其中该无机 化合物是磷光体。 还公开了一种制造白色发光二极管的方法,具有通过气溶胶沉积法形成由含有荧光体的无机化合物制成的上述荧光体层的步骤。 通过使用蓝色LED元件制备的显示高可靠性和较长使用寿命的白色发光二极管可以通过上述方式提供。
    • 10. 发明申请
    • White light emitting diode and method of manufcturing the same
    • 白光发光二极管及其制作方法
    • US20070176194A1
    • 2007-08-02
    • US11570952
    • 2005-06-10
    • Hideaki WakamatsuHiroyuki Nabeta
    • Hideaki WakamatsuHiroyuki Nabeta
    • H01L33/00
    • H01L33/501H01L2933/0041
    • Employing a LED which emits light via excitation with UV light, particularly the foregoing high-power LED, disclosed are a white LED exhibiting high reliability and longer operating life, and a method of manufacturing the white LED. Also disclosed are a white light emitting diode possessing a phosphor layer which emits light via excitation with UV light, wherein the phosphor layer consists of phosphor, or possesses phosphor and transparent inorganic oxide, and a method of manufacturing the white light emitting diode, possessing the step of making phosphor particles to collide with a light emitting diode at high speed to deposit the phosphor layer, employing an aerosol deposition process.
    • 采用通过紫外光激发发光的LED,特别是上述大功率LED,公开了一种白色LED,其具有高可靠性和较长的使用寿命,以及一种制造白光LED的方法。 还公开了一种白光发光二极管,其具有通过紫外光激发而发光的荧光体层,其中荧光体层由磷光体构成或具有荧光体和透明无机氧化物,以及制造白色发光二极管的方法, 使用气溶胶沉积工艺使荧光体颗粒与发光二极管高速碰撞以沉积磷光体层的步骤。