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1. 发明授权

US06433851B1 Transmission type liquid crystal display having a transparent colorless organic interlayer insulating film between pixel electrodes and switching 有权
公开(公告)号：US06433851B1
公开(公告)日：2002-08-13
申请号：US09757477
申请日：2001-01-11
申请人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki
发明人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki
IPC分类号： G02F1333
摘要： The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an, organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.

2. 发明授权

US5953084A Transmission type liquid crystal display device having capacitance ratio of 10% or less and charging rate difference of 0.6% or less 失效
标题翻译：电容比为10％以下，充电率差为0.6％以下的透射型液晶显示装置
公开(公告)号：US5953084A
公开(公告)日：1999-09-14
申请号：US110151
申请日：1998-07-06
申请人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki , Yoshinori Shimada
发明人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki , Yoshinori Shimada
IPC分类号： G02F1/1333 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L29/786 , G02F1/1343
CPC分类号： G02F1/136227 , G02F1/136213 , G02F1/133345 , G02F1/136209 , G02F2001/13606 , G02F2201/40
摘要： The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.
摘要翻译：本发明的透射型液晶显示装置包括：栅极线; 源线; 以及开关元件，其各自布置在每个栅极线和每个源极线的交叉点附近，每个开关元件的栅电极连接到栅极线，开关元件的源极连接到源极线，以及漏极所述开关元件连接到用于向液晶层施加电压的像素电极，其中在所述开关元件，所述栅极线和所述源极线之上设置由透明度高的有机膜形成的层间绝缘膜，并且其中由透明导电膜形成的像素电极设置在层间绝缘膜上。

3. 发明授权

US06195138B1 Transmission type liquid crystal display having an organic interlayer elements film between pixel electrodes and switching 有权
公开(公告)号：US06195138B1
公开(公告)日：2001-02-27
申请号：US09592857
申请日：2000-06-12
申请人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki
发明人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki
IPC分类号： G02F1136
CPC分类号： G02F1/136227 , G02F1/133345 , G02F1/136209 , G02F1/136213 , G02F2001/13606 , G02F2201/40
摘要： The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.

4. 发明授权

US6097452A Transmission type liquid crystal display having an organic interlayer elements film between pixel electrodes and switching 失效
标题翻译：在像素电极之间具有有机层间元素膜和切换的透射型液晶显示器
公开(公告)号：US6097452A
公开(公告)日：2000-08-01
申请号：US110134
申请日：1998-07-06
申请人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki , Yoshinori Shimada
发明人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki , Yoshinori Shimada
IPC分类号： G02F1/1333 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L29/786 , G02F1/1343
CPC分类号： G02F1/136227 , G02F1/136213 , G02F1/133345 , G02F1/136209 , G02F2001/13606 , G02F2201/40
摘要： The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.
摘要翻译：本发明的透射型液晶显示装置包括：栅极线; 源线; 以及开关元件，其各自布置在每个栅极线和每个源极线的交叉点附近，每个开关元件的栅电极连接到栅极线，开关元件的源极连接到源极线，以及漏极所述开关元件连接到用于向液晶层施加电压的像素电极，其中在所述开关元件，所述栅极线和所述源极线之上设置由透明度高的有机膜形成的层间绝缘膜，并且其中由透明导电膜形成的像素电极设置在层间绝缘膜上。

5. 发明授权

US6052162A Transmission type liquid crystal display device with connecting electrode and pixel electrode connected via contact hole through interlayer insulating film and method for fabricating 失效
标题翻译：具有连接电极和像素电极的透射型液晶显示装置通过层间绝缘膜通过接触孔连接及其制造方法
公开(公告)号：US6052162A
公开(公告)日：2000-04-18
申请号：US695632
申请日：1996-08-12
申请人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki , Yoshinori Shimada
发明人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki , Yoshinori Shimada
IPC分类号： G02F1/1333 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L29/786 , G02F1/343
CPC分类号： G02F1/136227 , G02F1/136213 , G02F1/133345 , G02F1/136209 , G02F2001/13606 , G02F2201/40
摘要： The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.
摘要翻译：本发明的透射型液晶显示装置包括：栅极线; 源线; 以及开关元件，其各自布置在每个栅极线和每个源极线的交叉点附近，每个开关元件的栅电极连接到栅极线，开关元件的源极连接到源极线，以及漏极所述开关元件连接到用于向液晶层施加电压的像素电极，其中在所述开关元件，所述栅极线和所述源极线之上设置由透明度高的有机膜形成的层间绝缘膜，并且其中由透明导电膜形成的像素电极设置在层间绝缘膜上。

6. 发明授权

US5745201A Matrix type display device 失效
标题翻译：矩阵式显示装置
公开(公告)号：US5745201A
公开(公告)日：1998-04-28
申请号：US725261
申请日：1996-10-02
申请人： Katsuhiro Kawai , Satoshi Yabuta , Masaya Okamoto , Masaru Kajitani
发明人： Katsuhiro Kawai , Satoshi Yabuta , Masaya Okamoto , Masaru Kajitani
IPC分类号： G02F1/1343 , G02F1/13 , G02F1/1335 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L29/786 , G02F1/1333
CPC分类号： G02F1/1309 , G02F1/133512 , G02F2001/136268
摘要： An object of the invention is to facilitate identifying the display color of each pixel during a test process and to apply a correction to a defective switching device in accordance with a test criterion established for each display color. On one transparent substrate, there are formed gate wiring and source wirings intersecting at right angles to each other so that insulation therebetween is maintained, and a pixel electrode and a TFT device are formed for each pixel, thus constructing one substrate member. On another transparent substrate, there is formed a counter electrode facing the pixel electrodes, and identifying means for identifying the display color of each pixel is formed on the side opposite from the side where the counter electrode is formed, the identifying means then being covered with a light-blocking member, thus constructing the another substrate member. The light-blocking member contains openings formed therethrough in portions facing the pixel electrodes. Since the display color of each pixel can be identified using the identifying means, a defective switching device in a pixel can be corrected in accordance with a correction criterion established for each display color.
摘要翻译：本发明的目的是便于在测试过程期间识别每个像素的显示颜色，并根据为每个显示颜色建立的测试标准对缺陷开关设备应用校正。在一个透明基板上形成栅极布线和源极布线，彼此成直角交叉，从而保持它们之间的绝缘，并且为每个像素形成像素电极和TFT器件，从而构成一个基板部件。在另一透明基板上形成面对像素电极的对置电极，并且在与形成对置电极的一侧相反的一侧形成用于识别每个像素的显示颜色的识别装置，然后识别装置被覆盖遮光构件，从而构成另一基板构件。遮光构件包括在与像素电极相对的部分中形成的开口。由于可以使用识别装置来识别每个像素的显示颜色，所以可以根据为每个显示颜色建立的校正标准来校正像素中的有缺陷的切换装置。

7. 发明授权

US6133157A Dry etching method of a silicon thin film 失效
标题翻译：硅薄膜的干蚀刻方法
公开(公告)号：US6133157A
公开(公告)日：2000-10-17
申请号：US119993
申请日：1998-07-21
申请人： Takehisa Sakurai , Hitoshi Ujimasa , Katsuhiro Kawai , Atsushi Ban , Masaru Kajitani , Mikio Katayama
发明人： Takehisa Sakurai , Hitoshi Ujimasa , Katsuhiro Kawai , Atsushi Ban , Masaru Kajitani , Mikio Katayama
IPC分类号： G02F1/13 , G02F1/136 , G02F1/1368 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/3065 , H01L21/32135 , H01L21/32137
摘要： In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chloride gas.
摘要翻译：在根据本发明的用于选择性蚀刻包括第一硅层和形成在第一硅层上并掺杂有杂质的第二硅层的多层结构的第二硅层的方法中，通过使用第二硅层选择性地蚀刻第二硅层包括氟利昂-14气体的蚀刻气体和选自氯化氢气体和氯化物气体的气体。

8. 发明授权

US5821133A Method of manufacturing active matrix substrate 失效
标题翻译：有源矩阵基板的制造方法
公开(公告)号：US5821133A
公开(公告)日：1998-10-13
申请号：US576036
申请日：1995-12-21
申请人： Katsuhiro Kawai , Mikio Katayama , Satoshi Yabuta , Masaru Kajitani
发明人： Katsuhiro Kawai , Mikio Katayama , Satoshi Yabuta , Masaru Kajitani
IPC分类号： G02F1/136 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/45 , H01L21/786
CPC分类号： H01L29/66765 , G02F1/1368 , H01L27/1214 , H01L29/458
摘要： A simplified method of manufacturing an active matrix substrate is disclosed. Gate wires, gate electrodes, gate insulating films, an etching stopper layer, semiconductor layers and contact layers are formed on an electrically insulating substrate. Pixel electrode material films, second electrical conductor films and second insulating films are formed successively on the substrate. The second insulating film and the second electrical conductor film are simultaneously patterned, so that source wires, source electrodes and drain electrodes are formed from the second electrical conductor film, and a protective film from the second insulating film. Then, the pixel electrode material film is patterned thereby to form pixel electrodes in a plurality of regions defined by the gate wires and the source wires.
摘要翻译：公开了制造有源矩阵衬底的简化方法。在绝缘基板上形成栅极线，栅电极，栅极绝缘膜，蚀刻停止层，半导体层和接触层。在基板上依次形成像素电极材料膜，第二导电膜和第二绝缘膜。同时对第二绝缘膜和第二导电膜进行构图，从而从第二导电膜形成源极线，源电极和漏电极以及来自第二绝缘膜的保护膜。然后，对像素电极材料膜进行图案化，从而在由栅极线和源极线限定的多个区域中形成像素电极。

9. 发明授权

US5783494A Selective dry etching method of undoped and doped silicon thin films 失效
标题翻译：未掺杂和掺杂硅薄膜的选择性干蚀刻方法
公开(公告)号：US5783494A
公开(公告)日：1998-07-21
申请号：US524886
申请日：1995-09-07
申请人： Takehisa Sakurai , Hitoshi Ujimasa , Katsuhiro Kawai , Atsushi Ban , Masaru Kajitani , Mikio Katayama
发明人： Takehisa Sakurai , Hitoshi Ujimasa , Katsuhiro Kawai , Atsushi Ban , Masaru Kajitani , Mikio Katayama
IPC分类号： G02F1/13 , G02F1/136 , G02F1/1368 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/3065 , H01L21/32135 , H01L21/32137
摘要： In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chlorine gas.
摘要翻译：在根据本发明的用于选择性蚀刻包括第一硅层和形成在第一硅层上并掺杂有杂质的第二硅层的多层结构的第二硅层的方法中，通过使用第二硅层选择性地蚀刻第二硅层包括氟利昂-14气体的蚀刻气体和选自氯化氢气体和氯气的气体。

10. 发明授权

US5688410A Method of ashing resist and apparatus therefor 失效
标题翻译：抗灰化方法及其设备
公开(公告)号：US5688410A
公开(公告)日：1997-11-18
申请号：US581197
申请日：1995-12-29
申请人： Masaru Kajitani , Satoshi Yabuta , Katsuhiro Kawai , Masaya Okamoto
发明人： Masaru Kajitani , Satoshi Yabuta , Katsuhiro Kawai , Masaya Okamoto
IPC分类号： H01L21/302 , G03F7/42 , H01L21/027 , H01L21/3065 , H01L21/311 , C23F1/00 , H01L21/306
CPC分类号： H01L21/31138 , G03F7/427
摘要： An object of the invention is to enhance the ashing speed of resist. A parallel plate electrode type plasma etching device is used in a mixed gas atmosphere of SF.sub.6 gas and O.sub.2 gas with the concentration of SF.sub.6 gas defined within 5 vol. % to 15 vol. %. A substrate to be treated, coated with a resist of hydrocarbon polymer is placed on a lower electrode. A high frequency electric power is applied to an upper electrode and lower electrode placed parallel to each other, and a plasma of mixed gas is generated in the reactor. A chemical reaction is induced in the resist and active ions of the plasma to vaporize and remove the resist.
摘要翻译：本发明的目的是提高抗蚀剂的灰化速度。在SF6气体和O 2气体的混合气体气氛中使用平行平板电极型等离子体蚀刻装置，其中SF 6气体的浓度定义在5体积内。％至15体积％。将待处理的基材，涂覆有碳氢聚合物的抗蚀剂放置在下电极上。将高频电力施加到彼此平行放置的上电极和下电极，并且在反应器中产生混合气体的等离子体。在等离子体的抗蚀剂和活性离子中引起化学反应以蒸发并除去抗蚀剂。

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