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1. 发明授权

US06426154B1 Ceramic circuit board 有权
标题翻译：陶瓷电路板
公开(公告)号：US06426154B1
公开(公告)日：2002-07-30
申请号：US09668747
申请日：2000-09-25
申请人： Takayuki Naba , Hiroshi Komorita , Noritaka Nakayama , Kiyoshi Iyogi
发明人： Takayuki Naba , Hiroshi Komorita , Noritaka Nakayama , Kiyoshi Iyogi
IPC分类号： B32B704
CPC分类号： H05K1/0271 , C04B37/026 , C04B2235/786 , C04B2237/12 , C04B2237/121 , C04B2237/123 , C04B2237/127 , C04B2237/128 , C04B2237/343 , C04B2237/366 , C04B2237/368 , C04B2237/402 , C04B2237/403 , C04B2237/405 , C04B2237/407 , C04B2237/408 , C04B2237/64 , C04B2237/704 , C04B2237/708 , C04B2237/72 , H01L23/13 , H01L23/3735 , H01L2924/0002 , H05K1/0306 , H05K1/09 , H05K3/38 , H05K3/4629 , H05K2201/0355 , H05K2201/0969 , H05K2201/09745 , Y10T428/12028 , Y10T428/12069 , Y10T428/12201 , Y10T428/12396 , Y10T428/12528 , Y10T428/12576 , Y10T428/1259 , H01L2924/00
摘要： The present invention provides a ceramic circuit board comprising: a ceramic substrate and a metal circuit plate bonded to the ceramic substrate through a brazing material layer; wherein the brazing material layer is composed of Al—Si group brazing material and an amount of Si contained in the brazing material is 7 wt % or less. In addition, it is preferable to form a thinned portion, holes, or grooves to outer peripheral portion of the metal circuit plate. According to the above structure of the present invention, there can be provided a ceramic circuit board having both high bonding strength and high heat-cycle resistance, and capable of increasing an operating reliability as electronic device.
摘要翻译：本发明提供一种陶瓷电路板，包括：陶瓷基板和金属电路板，通过钎料层与陶瓷基板接合; 其特征在于，所述钎焊材料层由Al-Si基钎焊材料构成，所述钎料中含有的Si的量为7重量％以下。此外，优选在金属电路板的外周部形成薄壁部，孔或槽。根据本发明的上述结构，可以提供一种具有高接合强度和高耐热循环性的陶瓷电路板，能够提高作为电子设备的操作可靠性。

2. 发明授权

US06232657B1 Silicon nitride circuit board and semiconductor module 失效
标题翻译：氮化硅电路板和半导体模块
公开(公告)号：US06232657B1
公开(公告)日：2001-05-15
申请号：US09051477
申请日：1998-04-17
申请人： Hiroshi Komorita , Kazuo Ikeda , Michiyasu Komatsu , Yoshitoshi Sato , Takayuki Naba
发明人： Hiroshi Komorita , Kazuo Ikeda , Michiyasu Komatsu , Yoshitoshi Sato , Takayuki Naba
IPC分类号： H01L23053
CPC分类号： H01L23/15 , C04B35/584 , C04B37/021 , C04B37/025 , C04B37/026 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3813 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3865 , C04B2235/3878 , C04B2235/3886 , C04B2235/3891 , C04B2235/3895 , C04B2235/5445 , C04B2235/6565 , C04B2235/72 , C04B2235/77 , C04B2235/85 , C04B2235/96 , C04B2235/9607 , C04B2237/062 , C04B2237/124 , C04B2237/125 , C04B2237/126 , C04B2237/127 , C04B2237/34 , C04B2237/343 , C04B2237/366 , C04B2237/407 , C04B2237/54 , C04B2237/68 , C04B2237/704 , C04B2237/706 , C04B2237/708 , C04B2237/86 , H01L23/3735 , H01L23/4006 , H01L24/32 , H01L24/48 , H01L2224/32225 , H01L2224/48227 , H01L2224/48472 , H01L2924/00014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01039 , H01L2924/01057 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/14 , H01L2924/3025 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2224/05599 , H01L2224/85399
摘要： There is provided a semiconductor module which comprises a high thermal conductive silicon nitride substrate 10 having a thermal conductivity of 60 w/m·k or more, a semiconductor element 7 mounted on this high thermal conductive silicon nitride substrate 10, metal circuit plates 3 which are bonded on the semiconductor element-mounted side of this high thermal conductive silicon nitride substrate 10 and single metal plate 4a which is bonded to a side opposing to the semiconductor element-mounted side of this high thermal conductive silicon nitride substrate and is bonded on an apparatus casing 9 or a mounting board. By this constitution, there can be provided a semiconductor module having a simple structure, which can be miniaturized, and having an improved structure strength and an excellent heat cycle resistance property without requiring a heat sink plate or the like.
摘要翻译：提供了一种半导体模块，其包括导热率为60w / mk以上的高导热氮化硅衬底10，安装在该高导热氮化硅衬底10上的半导体元件7，金属电路板3，在该高导热氮化硅衬底10的半导体元件安装侧和与该高导热氮化硅衬底的与半导体元件安装侧相对的一侧接合的单金属板4a并且接合在设备壳体 9或安装板。通过这种结构，可以提供一种具有简单结构的半导体模块，其可以小型化，并且具有改进的结构强度和优异的耐热循环性能，而不需要散热板等。

3. 发明授权

US5328751A Ceramic circuit board with a curved lead terminal 失效
标题翻译：陶瓷电路板
公开(公告)号：US5328751A
公开(公告)日：1994-07-12
申请号：US911713
申请日：1992-07-10
申请人： Hiroshi Komorita , Nobuyuki Mizunoya , Kazuo Matsumura , Kazuo Ikeda , Takayuki Naba , Tadashi Tanaka
发明人： Hiroshi Komorita , Nobuyuki Mizunoya , Kazuo Matsumura , Kazuo Ikeda , Takayuki Naba , Tadashi Tanaka
IPC分类号： H01L23/498 , H05K1/02 , H05K1/03 , H05K3/38 , H05K3/40 , B32B9/00
CPC分类号： H01L23/49861 , H05K1/0271 , H05K3/4092 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01014 , H01L2924/0102 , H01L2924/01039 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/10253 , H01L2924/12044 , H01L2924/19107 , H05K1/0306 , H05K2201/0355 , H05K2201/098 , H05K3/38 , Y10S428/901 , Y10T428/24917 , Y10T428/24926
摘要： This invention provides a ceramic circuit board comprising: a ceramic base board; a metal circuit plate integrally bonded onto a surface of the ceramic base board; a terminal connecting port formed by bending a part of the metal circuit plate for connecting a terminal of a module, the terminal connecting port being formed so that the terminal connecting port is raised from a surface of the ceramic base board, and a curvature radius of the bent portion provided on the terminal connecting port is set to 0.2 mm or more. An empty communication hole such as groove or through hole may also be formed at a bonding surface between the metal circuit plate and the ceramic base board.
摘要翻译：本发明提供一种陶瓷电路板，包括：陶瓷基板; 一体地结合到陶瓷基板的表面上的金属电路板; 端子连接端口，其通过弯曲用于连接模块的端子的金属电路板的一部分而形成，所述端子连接端口形成为使得端子连接端口从陶瓷基板的表面升高，并且曲率半径设置在端子连接口上的弯曲部分设定为0.2mm以上。还可以在金属电路板和陶瓷基板之间的接合表面上形成诸如槽或通孔的空的连通孔。

4. 发明授权

US5672848A Ceramic circuit board 失效
标题翻译：陶瓷电路板
公开(公告)号：US5672848A
公开(公告)日：1997-09-30
申请号：US365483
申请日：1994-12-28
申请人： Hiroshi Komorita , Tadashi Tanaka , Takayuki Naba , Takashi Hino
发明人： Hiroshi Komorita , Tadashi Tanaka , Takayuki Naba , Takashi Hino
IPC分类号： H01L23/12 , H01L21/52 , H01L23/13 , H01L23/373 , H01L23/00
CPC分类号： H01L23/3735 , H01L23/13 , H01L24/32 , H01L2224/32225 , H01L2924/01322 , H01L2924/15787 , H01L2924/351
摘要： A ceramic circuit board wherein a copper circuit plate is directly bonded at a predetermined position on a ceramic substrate and heat is applied; or the copper circuit plate is integrally bonded through a brazing material containing an active metal, such as Ti, Zr and Hf; and a semiconductor element is bonded onto a semiconductor element mounting portion of the copper circuit plate through a solder layer. The copper plate element is formed with grooves or holes thereon and is bonded on the semiconductor element mounting portion of the copper circuit plate, and the semiconductor element is integrally bonded onto a surface of a grooved or holed side of the copper plate element through a solder layer. By the above structure, the ceramic circuit board prevents solder voids when soldering the semiconductor element onto the copper circuit plate, thereby reducing the dispersion of the thermal resistance values between the semiconductor element and the ceramic substrate, and reducing or mitigating the thermal stress applied or acting on the mounting portion of the semiconductor element.
摘要翻译：一种陶瓷电路板，其中铜电路板直接接合在陶瓷基板上的预定位置并施加热量; 或铜电路板通过含有活性金属如Ti，Zr和Hf的钎料整体结合; 并且半导体元件通过焊料层接合到铜电路板的半导体元件安装部分上。铜板元件在其上形成有凹槽或孔，并且接合在铜电路板的半导体元件安装部分上，并且半导体元件通过焊料一体地结合到铜板元件的带槽或开孔侧的表面上层。通过上述结构，当将半导体元件焊接到铜电路板上时，陶瓷电路板防止焊料空隙，从而减小半导体元件和陶瓷基板之间的热阻值的分散，并减少或减轻施加的热应力或作用在半导体元件的安装部分上。

5. 发明申请

US20090056996A1 ELECTRONIC COMPONENT MODULE 有权
标题翻译：电子元件模块
公开(公告)号：US20090056996A1
公开(公告)日：2009-03-05
申请号：US12281856
申请日：2007-03-05
申请人： Hiromasa Kato , Takayuki Naba , Noritaka Nakayama
发明人： Hiromasa Kato , Takayuki Naba , Noritaka Nakayama
IPC分类号： H05K1/16
CPC分类号： H01L35/30 , H01L23/3735 , H01L23/473 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/29 , H01L2224/29101 , H01L2224/29124 , H01L2224/29139 , H01L2224/29298 , H01L2224/32225 , H01L2224/48091 , H01L2224/83192 , H01L2224/838 , H01L2224/83805 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/351 , H05K1/0201 , H05K1/18 , H05K3/3463 , H01L2924/00 , H01L2924/01014 , H01L2924/01022 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2924/01039
摘要： An electronic component module 1 has a circuit board 2 in which metal plates 5 and 7 are bonded to both surfaces of a ceramic substrate 3, and an electronic component 9 that is bonded to at least one surface of the metal plate 5 and is operable at least 125° C. The electronic component 9 is bonded to the metal plate 5 via a brazing material layer 8 having a higher melting point than a operating temperature of the electronic component 9.
摘要翻译：电子部件模块1具有电路基板2，其中金属板5和7接合在陶瓷基板3的两个表面上，电子元件9与金属板5的至少一个表面接合并可在至少125℃。电子部件9经由比电子部件9的工作温度高的熔点的钎料层8与金属板5接合。

6. 发明申请

US20090283309A1 CERAMIC-METAL BONDED BODY, METHOD FOR MANUFACTURING THE BONDED BODY AND SEMI-CONDUCTOR DEVICE USING THE BONDED BODY 有权
标题翻译：陶瓷金属结合体，使用粘结体制造粘合体和半导体器件的方法
公开(公告)号：US20090283309A1
公开(公告)日：2009-11-19
申请号：US12307301
申请日：2007-07-03
申请人： Takayuki Naba , Michiyasu Komatsu , Noritaka Nakayama , Hiromasa Kato
发明人： Takayuki Naba , Michiyasu Komatsu , Noritaka Nakayama , Hiromasa Kato
IPC分类号： H05K1/03 , B32B15/04 , B23K31/02 , B32B15/00 , B32B15/20
CPC分类号： H01L23/3735 , B23K35/0222 , B23K35/0233 , B23K35/0238 , B23K35/0244 , B23K35/025 , B23K35/30 , B23K35/3006 , B23K35/302 , C04B37/026 , C04B2237/124 , C04B2237/125 , C04B2237/126 , C04B2237/127 , C04B2237/343 , C04B2237/366 , C04B2237/368 , C04B2237/407 , C04B2237/592 , C04B2237/708 , H01L2924/0002 , H05K1/0306 , H05K3/38 , H05K2201/0175 , H05K2201/0355 , Y10T428/12535 , Y10T428/12576 , Y10T428/12618 , Y10T428/12625 , Y10T428/12778 , Y10T428/12806 , Y10T428/12868 , Y10T428/12896 , Y10T428/12903 , H01L2924/00
摘要： Problem is to provide a ceramic-metal composite and a semiconductor device that exhibits high bonding strength, heat cycle resistance, durability, and reliability even if the ceramic-metal composite is used in a power module.A ceramic-metal composite includes a ceramic substrate, an active metal brazing alloy layer, and a metal plate bonded to the ceramic substrate through the active metal brazing alloy layer disposed therebetween. The active metal brazing alloy layer contains a transition metal.
摘要翻译：问题是提供陶瓷 - 金属复合材料和半导体器件，其即使陶瓷 - 金属复合材料用于功率模块中，也具有高的接合强度，耐热循环性，耐久性和可靠性。陶瓷 - 金属复合材料包括陶瓷基板，活性金属钎焊合金层和通过设置在其间的活性金属钎焊合金层与陶瓷基板结合的金属板。活性金属钎焊合金层含有过渡金属。

7. 发明申请

US20090090452A1 PROCESS FOR PRODUCING NONFLAT CERAMIC SUBSTRATE 审中-公开
标题翻译：生产非氧化陶瓷基材的方法
公开(公告)号：US20090090452A1
公开(公告)日：2009-04-09
申请号：US11994371
申请日：2006-06-26
申请人： Takayuki Naba , Michiyasu Komatsu , Takao Shirai , Noritaka Nakayama , Mitsuhiro Okamoto
发明人： Takayuki Naba , Michiyasu Komatsu , Takao Shirai , Noritaka Nakayama , Mitsuhiro Okamoto
IPC分类号： C04B35/64 , C04B33/32 , B32B38/00 , B05D3/02
CPC分类号： C04B35/622 , C04B33/32 , H01L21/4807 , H01L21/4878 , H01L23/13 , H01L2924/0002 , H05K1/0284 , H05K1/0306 , H05K1/183 , H05K3/0044 , H05K2201/09045 , H05K2201/09845 , H05K2203/025 , H01L2924/00
摘要： In the production of a ceramic substrate (1) with a level difference (3), a surface of a fired substrate obtained by firing of a ceramic green sheet is honed to form the level difference (3). Alternatively, a level difference is first formed through processing of a ceramic green sheet, laminating of a ceramic green sheet, or the like, and thereafter the ceramic green sheet is fired to obtain a fired substrate (ceramic substrate) (1) with a level difference (3).
摘要翻译：在制造具有水平差（3）的陶瓷基板（1）的情况下，通过烧成陶瓷生片而得到的烧成基板的表面被珩磨以形成液面差（3）。或者，首先通过陶瓷生片的加工，陶瓷生片的层叠等形成水平差，然后烧成陶瓷生片以获得具有水平的烧制基板（陶瓷基板）（1）差异（3）。

8. 发明授权

US09214617B2 Electronic component module 有权
标题翻译：电子元件模块
公开(公告)号：US09214617B2
公开(公告)日：2015-12-15
申请号：US13589446
申请日：2012-08-20
申请人： Hiromasa Kato , Takayuki Naba , Noritaka Nakayama
发明人： Hiromasa Kato , Takayuki Naba , Noritaka Nakayama
IPC分类号： H05K1/16 , H05K1/18 , H05K1/02 , H01L35/30 , H01L23/373 , H01L23/00 , H05K3/34
CPC分类号： H01L35/30 , H01L23/3735 , H01L23/473 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/29 , H01L2224/29101 , H01L2224/29124 , H01L2224/29139 , H01L2224/29298 , H01L2224/32225 , H01L2224/48091 , H01L2224/83192 , H01L2224/838 , H01L2224/83805 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/351 , H05K1/0201 , H05K1/18 , H05K3/3463 , H01L2924/00 , H01L2924/01014 , H01L2924/01022 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2924/01039
摘要： An electronic component module has a circuit board in which metal plates are bonded to both surfaces of a ceramic substrate, and an electronic component that is bonded to at least one surface of the metal plate and is operable at least 125° C. The electronic component is bonded to the metal plate via a brazing material layer having a higher melting point than a operating temperature of the electronic component.
摘要翻译：电子部件模块具有电路基板，金属板与陶瓷基板的两面接合，电子部件与金属板的至少一个面接合，并且可操作至少125℃。电子部件通过具有比电子部件的工作温度更高的熔点的钎料层与金属板接合。

9. 发明授权

US08518554B2 Ceramic metal composite and semiconductor device using the same 有权
标题翻译：陶瓷金属复合材料和半导体器件使用相同
公开(公告)号：US08518554B2
公开(公告)日：2013-08-27
申请号：US12307301
申请日：2007-07-03
申请人： Takayuki Naba , Michiyasu Komatsu , Noritaka Nakayama , Hiromasa Kato
发明人： Takayuki Naba , Michiyasu Komatsu , Noritaka Nakayama , Hiromasa Kato
IPC分类号： H05K1/03 , B32B15/00 , B32B15/04 , B32B15/20
CPC分类号： H01L23/3735 , B23K35/0222 , B23K35/0233 , B23K35/0238 , B23K35/0244 , B23K35/025 , B23K35/30 , B23K35/3006 , B23K35/302 , C04B37/026 , C04B2237/124 , C04B2237/125 , C04B2237/126 , C04B2237/127 , C04B2237/343 , C04B2237/366 , C04B2237/368 , C04B2237/407 , C04B2237/592 , C04B2237/708 , H01L2924/0002 , H05K1/0306 , H05K3/38 , H05K2201/0175 , H05K2201/0355 , Y10T428/12535 , Y10T428/12576 , Y10T428/12618 , Y10T428/12625 , Y10T428/12778 , Y10T428/12806 , Y10T428/12868 , Y10T428/12896 , Y10T428/12903 , H01L2924/00
摘要： A ceramic-metal composite includes a ceramic substrate, an active metal brazing alloy layer, and a metal plate bonded to the ceramic substrate through the active metal brazing alloy layer disposed therebetween. The active metal brazing alloy layer contains a transition metal that is at least one element selected from Group-8 elements specified in the periodic table. According to the above configuration, the following composite and device can be provided: the ceramic-metal composite that exhibits high bonding strength, heat cycle resistance, durability, and reliability even if the ceramic-metal composite is used in a power module and a semiconductor device including the ceramic-metal composite.
摘要翻译：陶瓷 - 金属复合材料包括陶瓷基板，活性金属钎焊合金层和通过设置在其间的活性金属钎焊合金层与陶瓷基板结合的金属板。活性金属钎焊合金层含有选自元素周期表规定的8族元素中的至少一种元素的过渡金属。根据上述结构，可以提供如下的复合体和器件：即使将陶瓷 - 金属复合体用于功率模块和半导体中也可以表现出高的接合强度，耐热循环性，耐久性和可靠性的陶瓷 - 金属复合体装置包括陶瓷 - 金属复合材料。

10. 发明授权

US08273993B2 Electronic component module 有权
标题翻译：电子元件模块
公开(公告)号：US08273993B2
公开(公告)日：2012-09-25
申请号：US12281856
申请日：2007-03-05
申请人： Hiromasa Kato , Takayuki Naba , Noritaka Nakayama
发明人： Hiromasa Kato , Takayuki Naba , Noritaka Nakayama
IPC分类号： H05K1/16
CPC分类号： H01L35/30 , H01L23/3735 , H01L23/473 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/29 , H01L2224/29101 , H01L2224/29124 , H01L2224/29139 , H01L2224/29298 , H01L2224/32225 , H01L2224/48091 , H01L2224/83192 , H01L2224/838 , H01L2224/83805 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/351 , H05K1/0201 , H05K1/18 , H05K3/3463 , H01L2924/00 , H01L2924/01014 , H01L2924/01022 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2924/01039
摘要： An electronic component module 1 has a circuit board 2 in which metal plates 5 and 7 are bonded to both surfaces of a ceramic substrate 3, and an electronic component 9 that is bonded to at least one surface of the metal plate 5 and is operable at least 125° C. The electronic component 9 is bonded to the metal plate 5 via a brazing material layer 8 having a higher melting point than a operating temperature of the electronic component 9.
摘要翻译：电子部件模块1具有电路基板2，其中金属板5和7接合在陶瓷基板3的两个表面上，电子元件9与金属板5的至少一个表面接合并可在至少125℃。电子部件9经由比电子部件9的工作温度高的熔点的钎料层8与金属板5接合。

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