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1. 发明授权

US5986996A Optical pick-up and optical recording system 失效
标题翻译：光学拾取和光学记录系统
公开(公告)号：US5986996A
公开(公告)日：1999-11-16
申请号：US952012
申请日：1997-11-26
申请人： Shojiro Kitamura , Katsumi Mori , Takayuki Kondo , Takeo Kaneko , Toshio Arimura
发明人： Shojiro Kitamura , Katsumi Mori , Takayuki Kondo , Takeo Kaneko , Toshio Arimura
IPC分类号： G11B7/00 , G11B7/0037 , G11B7/12 , G11B7/125 , G11B7/135
CPC分类号： G11B7/1353 , G11B7/0037 , G11B7/123 , G11B7/127 , G11B7/1381 , G11B7/139 , G11B2007/0006
摘要： An optical pick-up according to the present invention is designed such that laser beams having different polarization directions or different radiation angles are irradiated from laser beam sources formed in a surface emitting laser array to change the effective numerical aperture of an optical element having an objective lens, or the like. An optical pick-up having high capability with an optical disk having a low recording density and a thick substrate according to the CD standard, and an optical disk having a high recording density and a thin substrate according to the DVD standard, can be realized. A plurality of laser beam sources can be formed in a small space by employing a surface emitting laser array, and the numerical aperture of the optical system can be controlled by selecting a laser beam. For this reason, an optical pick-up having compatibility can be realized with an extremely simple arrangement, and a compact and high-performance optical pick-up can be provided at low cost.
摘要翻译： PCT No.PCT / JP97 / 00744 Sec。 371日期：1997年11月26日 102（e）1997年11月26日PCT PCT 1997年3月10日PCT公布。公开号WO97 / 34297 PCT 日本1997年9月18日根据本发明的光学拾取器被设计成使得具有不同偏振方向或不同辐射角的激光束从形成在表面发射激光器阵列中的激光束源照射以改变有效数值孔径具有物镜的光学元件等。可以实现具有根据CD标准的具有低记录密度的光盘和厚基板以及根据DVD标准具有高记录密度和薄基板的光盘的高性能的光学拾取器。可以通过使用表面发射激光器阵列在小空间中形成多个激光束源，并且可以通过选择激光束来控制光学系统的数值孔径。为此，可以以非常简单的结构实现具有兼容性的光学拾取器，并且可以以低成本提供紧凑且高性能的光学拾取器。

2. 发明授权

US06501778B1 Plane emission type semiconductor laser and method of manufacturing the same 失效
标题翻译：平面发射型半导体激光器及其制造方法
公开(公告)号：US06501778B1
公开(公告)日：2002-12-31
申请号：US09284130
申请日：1999-07-01
申请人： Takayuki Kondo , Takeo Kaneko , Katsumi Mori
发明人： Takayuki Kondo , Takeo Kaneko , Katsumi Mori
IPC分类号： H01S522
CPC分类号： H01S5/423 , H01S5/0421 , H01S5/0425 , H01S5/18311
摘要： The present invention aims at providing a light source for a semiconductor laser beam scanner having high resolution in scanning and a high degree of mounting freedom, and suitable for emitting a laser beam from the surface. Therefore, a surface emission type semiconductor laser includes at least a first mirror 102, an active layer 103, a current narrowing layer 113, a contact layer 106, and a second mirror 111, which are formed on a semiconductor substrate 101; wherein the current narrowing layer 113 is made of a stripe AlAs layer 105, and an Al oxide layer 108 formed to surround the AlAs layer 105; the region of the contact layer 106, which overlaps the Al oxide layer, is formed in a comb shape 109, and independent contact electrodes 110 are respectively formed on the upper surfaces of the teeth of the comb shape 109 of the contact layer.
摘要翻译：本发明的目的在于提供一种用于半导体激光束扫描器的光源，该扫描器具有高分辨率的扫描和高度的安装自由度，并适用于从表面发射激光束。因此，表面发射型半导体激光器至少包括形成在半导体衬底101上的第一反射镜102，有源层103，电流变窄层113，接触层106和第二反射镜111; 其中，电流变窄层113由条状AlAs层105和形成为包围AlAs层105的Al氧化物层108构成; 与Al氧化物层重叠的接触层106的区域形成为梳状109，并且在接触层的梳状109的齿的上表面上分别形成独立的接触电极110。

3. 发明授权

US5848088A Surface emission type semiconductor for laser with optical detector, method of manufacturing thereof, and sensor using the same 失效
标题翻译：具有光学检测器的激光器的表面发射型半导体及其制造方法以及使用其的传感器
公开(公告)号：US5848088A
公开(公告)日：1998-12-08
申请号：US979945
申请日：1997-11-26
申请人： Katsumi Mori , Takayuki Kondo , Takeo Kaneko
发明人： Katsumi Mori , Takayuki Kondo , Takeo Kaneko
IPC分类号： H01S5/026 , H01S5/183 , H01S3/19 , H01L21/20 , H01S3/08
CPC分类号： H01S5/0262 , H01S5/0208 , H01S5/0264 , H01S5/18341 , H01S5/18369
摘要： A surface emission type semiconductor laser having an optical detector which can satisfactorily assure both the laser emission characteristics of the photoemitter and the optical-to-electrical conversion efficiency. The laser comprises a first conducting semiconductor layer and a second conducting semiconductor layer formed on first and second regions of a semiconductor substrate. Over the second conducting semiconductor layer on the first region is formed an optical resonator which emits light perpendicular to the plane of the semiconductor substrate. On the second region, at least one photodiode is formed by the first and second conducting semiconductor layers. On the first region the second conducting semiconductor layer is formed with a thickness of at least 1 .mu.m, and is used as a lower electrode for supplying a current to the optical resonator. On the second region, the second conducting semiconductor layer forming the at least one photodiode is formed with a thickness of less than 1 .mu.m after etching.
摘要翻译：具有可以令人满意地确保光发射器的激光发射特性和光电转换效率的光检测器的表面发射型半导体激光器。激光器包括形成在半导体衬底的第一和第二区域上的第一导电半导体层和第二导电半导体层。在第一区域上的第二导电半导体层上形成有发射垂直于半导体衬底平面的光的光学谐振器。在第二区域上，由第一和第二导电半导体层形成至少一个光电二极管。在第一区域上，第二导电半导体层形成为至少1μm的厚度，并且用作向光谐振器提供电流的下电极。在第二区域上，形成至少一个光电二极管的第二导电半导体层在蚀刻后形成的厚度小于1μm。

4. 发明授权

US5724145A Optical film thickness measurement method, film formation method, and semiconductor laser fabrication method 失效
标题翻译：光学膜厚度测量方法，成膜方法和半导体激光器制造方法
公开(公告)号：US5724145A
公开(公告)日：1998-03-03
申请号：US679714
申请日：1996-07-12
申请人： Takayuki Kondo , Katsumi Mori , Takeo Kaneko
发明人： Takayuki Kondo , Katsumi Mori , Takeo Kaneko
IPC分类号： C23C14/24 , C30B25/16 , G01B11/06 , H01L21/20 , H01L21/205 , H01L21/66 , H01S5/00 , H01S5/183
CPC分类号： G01B11/0625 , H01S2301/176 , H01S5/0042 , H01S5/18308 , H01S5/18341 , H01S5/18361 , H01S5/18369
摘要： An optical film thickness measurement method and film formation method uses a method of measuring the optical thickness of films by radiating a monitor light beam towards a substrate during the formation of a stack of films on the substrate and measuring the optical film thickness from extreme values in the resultant reflection intensity. This stack of films comprises a first film having a reflectance of at least 98% within a predetermined wavelength range and a second film formed on the first film and having an absorption coefficient of 1000 cm.sup.-1 or less within that predetermined wavelength range. The first film is measured by a first monitor light beam having a predetermined wavelength and the second film is measured by a second monitor light beam having a wavelength that differs from the predetermined wavelength range.

5. 发明授权

US5587335A Method of making surface emission type semiconductor laser 失效
标题翻译：制造表面发射型半导体激光器的方法
公开(公告)号：US5587335A
公开(公告)日：1996-12-24
申请号：US501660
申请日：1995-07-12
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42 , H01L21/20
CPC分类号： H01S5/18369 , H01L33/0062 , H01S5/423 , H01S2301/166 , H01S2301/18 , H01S5/18308 , H01S5/18338 , H01S5/18341 , H01S5/18394 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： In order to manufacture a surface emission type semiconductor laser, a plurality of semiconductor layers including a multilayered semiconductor mirror, a cladding layer, an active layer and other layers are sequentially formed on a substrate through the organic metal vapor growth method. A photoresist mask is then formed on the semiconductor layers. At least the cladding layer in the semiconductor layers is anisotropically etched by the use of the photoresist mask. At least one column-like portion is thus formed to have sidewalls extending perpendicular to the substrate and to guide the light in a direction perpendicular to the substrate. Thereafter, a buried layer including a single layer formed therein at an area covering at least the sidewalls of the column-like portion is formed around the column-like portion. A multilayered dielectric mirror is deposited in the column-like portion on the light exit end thereof. The multilayered dielectric mirror is disposed at the light exit port of a light exit side electrode. To increase the reflectivity below the light exit side electrode, a multilayered semiconductor mirror may be formed in the column-like portion at a position nearer the light exit side than the cladding layer.
摘要翻译：为了制造表面发射型半导体激光器，通过有机金属蒸气生长法在衬底上依次形成包括多层半导体镜，包层，有源层等的多个半导体层。然后在半导体层上形成光致抗蚀剂掩模。至少通过使用光致抗蚀剂掩模对半导体层中的包覆层进行各向异性蚀刻。因此，至少一个柱状部分形成为具有垂直于衬底延伸的侧壁并且在垂直于衬底的方向上引导光。此后，在柱状部分周围形成包括在至少覆盖柱状部分的侧壁的区域上形成的单层的埋层。在其出射端的柱状部分中沉积多层电介质镜。多层电介质反射镜设置在光出射侧电极的光出射口。为了增加光出射侧电极之下的反射率，可以在比包层更靠近光出射侧的位置的柱状部分中形成多层半导体镜。

6. 发明授权

US5295148A Surface emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US5295148A
公开(公告)日：1994-03-15
申请号：US13024
申请日：1993-02-02
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42 , H01S3/19
CPC分类号： H01L33/0062 , H01S5/18338 , H01S5/18369 , H01S5/423 , H01S2301/166 , H01S5/18308 , H01S5/18341 , H01S5/1835 , H01S5/18355 , H01S5/18394 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portion. The column-like portion is of rectangular cross-section in a plane parallel to the semiconductor substrate and having longer and shorter sides, whereby the polarization plane of said emitted laser beam is parallel to the direction of said shorter sides.
摘要翻译：表面发射型半导体激光器包括在与激光器的半导体衬底垂直的方向上限定至少一个谐振器的多个半导体层，所述至少一层半导体层中的包层被形成为至少一个柱状在垂直于半导体衬底的方向延伸的部分，以及围绕柱状部分埋设的II-VI族化合物半导体外延层。柱状部分在与半导体衬底平行的平面中具有矩形横截面并且具有较长和较短的侧面，由此所述发射的激光束的偏振面平行于所述短边的方向。

7. 发明授权

US5621750A Surface emission type semiconductor laser, method and apparatus for producing the same 失效
标题翻译：表面发射型半导体激光器，其制造方法和装置
公开(公告)号：US5621750A
公开(公告)日：1997-04-15
申请号：US491955
申请日：1995-07-17
申请人： Hideaki Iwano , Katsumi Mori , Takayuki Kondo , Tatsuya Asaka
发明人： Hideaki Iwano , Katsumi Mori , Takayuki Kondo , Tatsuya Asaka
IPC分类号： H01S5/00 , H01S5/183 , H01S5/22 , H01S5/42 , H01S3/19 , H01L21/20
CPC分类号： H01S5/18341 , H01S5/423 , H01S2301/18 , H01S2304/04 , H01S5/0042 , H01S5/0612 , H01S5/1221 , H01S5/18361 , H01S5/18369 , H01S5/2211 , H01S5/2213 , H01S5/2214 , H01S5/4068
摘要： A surface emission type semiconductor laser has insulation layers (107, 108) embedding separation grooves for partially separating the waveguide path in an optical resonator formed by a pair of reflecting mirrors, namely a distributed reflection type multilayer film mirror (104) and a dielectric multilayer film mirror (111), and a quantum well active layer (105).A surface emission type semiconductor laser is designed such that the lasing wavelength .lambda..sub.G of an edge emission type semiconductor laser having the same semiconductor layers as those of the optical resonator is set to be shorter than a desired lasing wavelength .lambda..sub.EM of the surface emission type semiconductor laser by a given differential wavelength (gain offset) .DELTA..lambda..sub.EM.
摘要翻译： PCT No.PCT / JP95 / 00060 Sec。 371日期：1995年7月17日 102（e）日期1995年7月17日PCT 1995年1月20日PCT PCT。 WO95 / 20254 PCT出版物日期：1995年7月27日表面发射型半导体激光器具有在由一对反射镜形成的光谐振器（即，分布反射型多层膜反射镜（104））中嵌入用于将波导路径部分分离的分离槽的绝缘层（107,108））和电介质多层膜反射镜（111）和量子阱活性层（105）。表面发射型半导体激光器被设计成使得具有与光学谐振器相同的半导体层的边缘发射型半导体激光器的激发波长λG被设置为短于表面发射型的期望的激光波长λEM 半导体激光器通过给定的差分波长（增益偏移）DELTA lambda EM。

8. 发明授权

US5404369A Surface emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US5404369A
公开(公告)日：1995-04-04
申请号：US228491
申请日：1994-04-15
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42 , H01S3/19
CPC分类号： H01S5/18369 , H01L33/0062 , H01S5/423 , H01S5/18308 , H01S5/18341 , H01S5/1835 , H01S5/18355 , H01S5/18394 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portions. "Lattice mismatch ratio" between the II-VI group compound semiconductor epitaxial layer and the column-like portions is no more than 0.2%, or more preferably no more than 0.16%. The II-VI group compound semiconductor layer is formed from an adduct consisting of II group organometallic compound and VI group organometallic compound and a VI group hydride by the use of a chemical vapor deposition. If a plurality of column-like portions are to be formed by a separation groove, these column-like portions are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.
摘要翻译：表面发射型半导体激光器包括在与激光器的半导体衬底垂直的方向上限定至少一个谐振器的多个半导体层，所述至少一层半导体层中的包层被形成为至少一个柱状在垂直于半导体衬底的方向上延伸的部分，以及围绕柱状部分埋设的II-VI族化合物半导体外延层。 II-VI族化合物半导体外延层和柱状部分之间的“晶格失配比”不超过0.2％，更优选不大于0.16％。 II-VI族化合物半导体层通过使用化学气相沉积由II族有机金属化合物和VI族有机金属化合物和VI族氢化物组成的加合物形成。如果由分离槽形成多个柱状部分，则这些柱状部分彼此分离，将II-VI族化合物半导体外延层埋入分离槽中。

9. 发明授权

US5317584A Surface emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US5317584A
公开(公告)日：1994-05-31
申请号：US997177
申请日：1992-12-28
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42 , H01S3/19
CPC分类号： H01S5/18308 , H01L33/0062 , H01S5/423 , H01S2301/08 , H01S5/18338 , H01S5/1835 , H01S5/18369 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portions. The II-VI group compound semiconductor layer is formed from an adduct consisting of II group organometallic compound and VI group organometallic compound and a VI group hydride by the use of a chemical vapor deposition. If a plurality of column-like portions are to be formed by a separation groove, these column-like portions are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.
摘要翻译：表面发射型半导体激光器包括在与激光器的半导体衬底垂直的方向上限定至少一个谐振器的多个半导体层，所述至少一层半导体层中的包层被形成为至少一个柱状在垂直于半导体衬底的方向上延伸的部分，以及围绕柱状部分埋设的II-VI族化合物半导体外延层。 II-VI族化合物半导体层通过使用化学气相沉积由II族有机金属化合物和VI族有机金属化合物和VI族氢化物组成的加合物形成。如果由分离槽形成多个柱状部分，则这些柱状部分彼此分离，将II-VI族化合物半导体外延层埋入分离槽中。

10. 发明授权

US5537666A Surface emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US5537666A
公开(公告)日：1996-07-16
申请号：US319650
申请日：1994-10-07
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42 , H01S3/19
CPC分类号： H01S5/18369 , H01L33/0062 , H01S5/423 , H01S2301/166 , H01S2301/18 , H01S5/18308 , H01S5/18338 , H01S5/18341 , H01S5/18394 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： In order to manufacture a surface emission type semiconductor laser, a plurality of semiconductor layers including a multilayered semiconductor mirror, a cladding layer, an active layer and other layers are sequentially formed on a substrate through the organic metal vapor growth method. A photoresist mask is then formed on the semiconductor layers. At least the cladding layer in the semiconductor layers is anisotropically etched by the use of the photoresist mask. At least one column-like portion is thus formed to have sidewalls extending perpendicular to the substrate and to guide the light in a direction perpendicular to the substrate. Thereafter, a buried layer including a single layer formed therein at an area covering at least the sidewalls of the column-like portion is formed around the column-like portion. A multilayered dielectric mirror is deposited in the column-like portion on the light exit end thereof. The multilayered dielectric mirror is disposed at the light exit port of a light exit side electrode. To increase the reflectivity below the light exit side electrode, a multilayered semiconductor mirror may be formed in the column-like portion at a position nearer the light exit side than the cladding layer.
摘要翻译：为了制造表面发射型半导体激光器，通过有机金属蒸气生长法在衬底上依次形成包括多层半导体镜，包层，有源层等的多个半导体层。然后在半导体层上形成光致抗蚀剂掩模。至少通过使用光致抗蚀剂掩模对半导体层中的包覆层进行各向异性蚀刻。因此，至少一个柱状部分形成为具有垂直于衬底延伸的侧壁并且在垂直于衬底的方向上引导光。此后，在柱状部分周围形成包括在至少覆盖柱状部分的侧壁的区域上形成的单层的埋层。在其出射端的柱状部分中沉积多层电介质镜。多层电介质反射镜设置在光出射侧电极的光出射口。为了增加光出射侧电极之下的反射率，可以在比包层更靠近光出射侧的位置的柱状部分中形成多层半导体镜。

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