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    • 1. 发明申请
    • Optical members and compositions for producing them
    • 用于制造它们的光学构件和组合物
    • US20060056786A1
    • 2006-03-16
    • US10531704
    • 2003-11-14
    • Takayasu YasudaHiroki SasakiRyoichi NemoriYuuichi Okamoto
    • Takayasu YasudaHiroki SasakiRyoichi NemoriYuuichi Okamoto
    • G02B6/028
    • G02B1/045C08F2/44G02B1/041
    • It is disclosed a polymerizable composition for producing an optical member for 850 nm wavelength comprising: a polymerizable monomer composition and a compound, having a different refractive index from that of the polymerizable monomer composition, whose structure has a benzene ring substituted by a substituent having a Hammett value of not greater than 0.04 or by plural substituents having an average value of Hammett values thereof of not greater than 0.04. It is also disclosed a polymerizable composition for producing an optical member comprising a polymerizable monomer composition comprising at least one selected from the group consisting of C7-20 alicyclic (meth) acrylates and a compound, having a different refractive index from that of the polymerizable monomer composition and having a solubility parameter of not greater than 10.9, whose structure has a benzene ring substituted by the substituent or the substituents defined above.
    • 公开了一种用于制造850nm波长的光学部件的可聚合组合物,包括:可聚合单体组合物和具有与可聚合单体组合物的折射率不同的折射率的化合物,其结构具有被具有 哈米特值不大于0.04,或由哈米特值的平均值不大于0.04的多个取代基组成。 还公开了一种用于制造光学部件的可聚合组合物,其包含可聚合单体组合物,其包含选自由C 7-20脂环族(甲基)丙烯酸酯组成的组中的至少一种和具有不同的 折射率与可聚合单体组合物的折射率相差并且具有不大于10.9的溶解度参数,其结构具有由取代基或上述取代基取代的苯环。
    • 2. 发明授权
    • Optical members and compositions for producing them
    • 用于制造它们的光学构件和组合物
    • US07343073B2
    • 2008-03-11
    • US10531704
    • 2003-11-14
    • Takayasu YasudaHiroki SasakiRyoichi NemoriYuuichi Okamoto
    • Takayasu YasudaHiroki SasakiRyoichi NemoriYuuichi Okamoto
    • G02B6/028
    • G02B1/045C08F2/44G02B1/041
    • It is disclosed a polymerizable composition for producing an optical member for 850 nm wavelength comprising: a polymerizable monomer composition and a compound, having a different refractive index from that of the polymerizable monomer composition, whose structure has a benzene ring substituted by a substituent having a Hammett value of not greater than 0.04 or by plural substituents having an average value of Hammett values thereof of not greater than 0.04. It is also disclosed a polymerizable composition for producing an optical member comprising a polymerizable monomer composition comprising at least one selected from the group consisting of C7-20 alicyclic (meth)acrylates and a compound, having a different refractive index from that of the polymerizable monomer composition and having a solubility parameter of not greater than 10.9, whose structure has a benzene ring substituted by the substituent or the substituents defined above.
    • 公开了一种用于制造850nm波长的光学部件的可聚合组合物,包括:可聚合单体组合物和具有与可聚合单体组合物的折射率不同的折射率的化合物,其结构具有被具有 哈米特值不大于0.04,或由哈米特值的平均值不大于0.04的多个取代基组成。 还公开了一种用于制造光学部件的可聚合组合物,其包含可聚合单体组合物,其包含选自由C 7-20脂环族(甲基)丙烯酸酯组成的组中的至少一种和具有不同的 折射率与可聚合单体组合物的折射率相差并且具有不大于10.9的溶解度参数,其结构具有由取代基或上述取代基取代的苯环。
    • 4. 发明授权
    • SRAM device having four tunneling transistors connected to a flip-flop
    • 具有连接到触发器的四个隧道晶体管的SRAM器件
    • US08872275B2
    • 2014-10-28
    • US13368632
    • 2012-02-08
    • Hiroki SasakiKeisuke Nakatsuka
    • Hiroki SasakiKeisuke Nakatsuka
    • H01L21/70G11C11/412H01L27/11
    • G11C11/412H01L27/1108
    • An SRAM device has a first tunnel transistor that allows a current to flow in a direction from the non-inverting output terminal to the first bit line when the first tunnel transistor turns on. The SRAM device has a second tunnel transistor allows a current to flow in a direction from the first bit line to the non-inverting output terminal when the second tunnel transistor turns on. The SRAM device has a third tunnel transistor allows a current to flow in a direction from the inverting output terminal to the second bit line when the third tunnel transistor turns on. The SRAM device has a fourth tunnel transistor allows a current to flow in a direction from the second bit line to the inverting output terminal when the fourth tunnel transistor turns on.
    • 当第一隧道晶体管导通时,SRAM器件具有第一隧道晶体管,其允许电流在从非反相输出端子到第一位线的方向上流动。 当第二隧道晶体管导通时,SRAM器件具有第二隧道晶体管,允许电流在从第一位线到非反相输出端的方向上流动。 当第三隧道晶体管导通时,SRAM器件具有第三隧道晶体管,允许电流在从反相输出端子到第二位线的方向上流动。 当第四隧道晶体管导通时,SRAM器件具有第四隧道晶体管,允许电流在从第二位线到反相输出端的方向上流动。
    • 5. 发明申请
    • SRAM DEVICE
    • SRAM设备
    • US20120326239A1
    • 2012-12-27
    • US13368632
    • 2012-02-08
    • Hiroki SasakiKeisuke Nakatsuka
    • Hiroki SasakiKeisuke Nakatsuka
    • H01L27/11
    • G11C11/412H01L27/1108
    • An SRAM device has a first tunnel transistor that allows a current to flow in a direction from the non-inverting output terminal to the first bit line when the first tunnel transistor turns on. The SRAM device has a second tunnel transistor allows a current to flow in a direction from the first bit line to the non-inverting output terminal when the second tunnel transistor turns on. The SRAM device has a third tunnel transistor allows a current to flow in a direction from the inverting output terminal to the second bit line when the third tunnel transistor turns on. The SRAM device has a fourth tunnel transistor allows a current to flow in a direction from the second bit line to the inverting output terminal when the fourth tunnel transistor turns on.
    • 当第一隧道晶体管导通时,SRAM器件具有第一隧道晶体管,其允许电流在从非反相输出端子到第一位线的方向上流动。 当第二隧道晶体管导通时,SRAM器件具有第二隧道晶体管,允许电流在从第一位线到非反相输出端的方向上流动。 当第三隧道晶体管导通时,SRAM器件具有第三隧道晶体管,允许电流在从反相输出端子到第二位线的方向上流动。 当第四隧道晶体管导通时,SRAM器件具有第四隧道晶体管,允许电流在从第二位线到反相输出端的方向上流动。