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    • 1. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US07620090B2
    • 2009-11-17
    • US11769818
    • 2007-06-28
    • Takashi UedaKoji YamadaTomoki NozawaYoshihiko Kobayashi
    • Takashi UedaKoji YamadaTomoki NozawaYoshihiko Kobayashi
    • H01S5/00
    • H01S5/0683H01L2224/45144H01L2224/48091H01S5/02252H01S5/02276H01L2924/00014H01L2924/00
    • A semiconductor laser device includes a supporting substrate having a wiring pattern thereon; LD fixed on the surface of the supporting substrate and having a signal output section that emits signal laser light and a monitoring output section that emits monitoring laser light; and a monitoring PD. The monitoring PD includes a semiconductor substrate having a region that transmits light of the wavelength of the monitoring laser light; and a light receiving section for photoelectric conversion formed on the surface of the semiconductor substrate, one incident surface of the side surfaces of the semiconductor substrate arranged in a position to which the monitoring laser light can be made incident, the light receiving section arranged in a position higher than the monitoring output section, and a back surface of the semiconductor substrate and the wiring pattern fixed on the supporting substrate to oppose each other.
    • 一种半导体激光器件包括其上具有布线图案的支撑基板; LD固定在支撑基板的表面上,并具有发射信号激光的信号输出部分和发射监控激光的监视输出部分; 和监控PD。 监视PD包括具有透射监测激光的波长的光的区域的半导体衬底; 以及形成在所述半导体衬底的表面上的用于光电转换的光接收部分,所述半导体衬底的侧表面的一个入射表面布置在可以使所述监测激光入射的位置,所述光接收部分布置在 位置高于监测输出部分,以及半导体衬底的背面和固定在支撑衬底上的布线图案彼此相对。
    • 2. 发明申请
    • SEMICONDUCTOR LASER DEVICE
    • 半导体激光器件
    • US20080008221A1
    • 2008-01-10
    • US11769818
    • 2007-06-28
    • Takashi UedaKoji YamadaTomoki NozawaYoshihiko Kobayashi
    • Takashi UedaKoji YamadaTomoki NozawaYoshihiko Kobayashi
    • H01S5/026
    • H01S5/0683H01L2224/45144H01L2224/48091H01S5/02252H01S5/02276H01L2924/00014H01L2924/00
    • A semiconductor laser device of the invention is provided with: a supporting substrate, on the surface of which there is formed a wiring pattern; a LD that is fixed on the surface of the supporting substrate and that has a signal output section that emits signal laser light and a monitoring output section that emits monitoring laser light; and a monitoring PD. The monitoring PD has: a semiconductor substrate having a region that transmits light of the wavelength of the monitoring laser light; and a light receiving section for photoelectric conversion formed on the surface of the semiconductor substrate, one incident surface of the side surfaces of the semiconductor substrate being arranged in a position to which the monitoring laser light can be made incident, the light receiving section being arranged in a position higher than the monitoring output section, and a back surface of the semiconductor substrate and the wiring pattern being fixed on the supporting substrate so as to oppose to each other.
    • 本发明的半导体激光装置设置有:支撑基板,其表面上形成有布线图案; 固定在支撑基板的表面上并且具有发射信号激光的信号输出部分和发出监视激光的监视输出部分的LD; 和监控PD。 监视PD具有:具有透射监测激光的波长的光的区域的半导体衬底; 以及形成在所述半导体衬底的表面上的用于光电转换的光接收部分,所述半导体衬底的侧表面的一个入射表面被布置在可以使所述监控激光入射的位置,所述光接收部分被布置 在比监视输出部分高的位置上,并且半导体衬底的背面和布线图案被固定在支撑衬底上以彼此相对。