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    • 1. 发明申请
    • PIEZOELECTRIC OSCILLATOR
    • 压电振荡器
    • US20080238561A1
    • 2008-10-02
    • US12058231
    • 2008-03-28
    • Takashi OtsukaHisato Takeuchi
    • Takashi OtsukaHisato Takeuchi
    • H03B5/32H03B5/36
    • H03B5/364
    • For a piezoelectric oscillator according to the present invention, an oscillator circuit includes: a piezoelectric vibrator; an NMOS transistor and a PMOS transistor that constitute an amplifier connected in parallel to the piezoelectric vibrator; and load capacitors connected in parallel to the piezoelectric vibrator. The gate terminals of the NMOS transistor and the PMOS transistor, which are constituents of the amplifier, are connected by a DC cut capacitor, and the gate terminal of the NMOS transistor and the output terminal of the amplifier are connected by a feedback resistor. An arbitrary bias voltage, to be applied to the gate terminal of the PMOS transistor via a high-frequency elimination resistor, is generated by a circuit provided by a diode-connected, second PMOS transistor.
    • 对于根据本发明的压电振荡器,振荡器电路包括:压电振动器; 构成与压电振子并联连接的放大器的NMOS晶体管和PMOS晶体管; 并将负载电容并联连接到压电振动器。 作为放大器的组成部分的NMOS晶体管和PMOS晶体管的栅极端子由直流切断电容器连接,NMOS晶体管的栅极端子和放大器的输出端子通过反馈电阻器连接。 通过由二极管连接的第二PMOS晶体管提供的电路产生经由高频消除电阻施加到PMOS晶体管的栅极端子的任意偏置电压。
    • 2. 发明授权
    • MOS varactor and voltage-controlled oscillator using the same
    • MOS变容二极管和压控振荡器使用相同
    • US07369008B2
    • 2008-05-06
    • US11362186
    • 2006-02-27
    • Shigeo MasaiYuichi TateyamaTakashi OtsukaHisato Takeuchi
    • Shigeo MasaiYuichi TateyamaTakashi OtsukaHisato Takeuchi
    • H03B5/12
    • H03B5/368
    • To provide a MOS varactor in which oscillation frequency variation is small and variation in a capacitance changing voltage is small, and a voltage-controlled oscillator using the MOS varactor, as a load capacitor of an oscillating circuit composed of a feedback resistor 1, an amplifier 2, and a crystal vibrator 3, a variable electrostatic capacitor, which is generated between drain/source terminals and a gate terminal of each of MOS transistors 5a and 6a each of which source and drain terminals are short-circuited, is connected. A bulk terminal of each of the MOS transistors 5a and 6a is connected to one terminal of a resistor 19, a voltage is applied to the other terminal of the resistor 19, the bulk terminal of each of the MOS transistors 5a and 6a is connected to one terminal of a capacitor 20, and the other terminal of the capacitor 20 is grounded.
    • 为了提供其中振荡频率变化小并且电容变化电压的变化小的MOS变容二极管,以及使用MOS变容二极管作为由反馈电阻器1构成的振荡电路的负载电容器的压控振荡器,放大器 2和晶体振子3,在漏极/源极端子和源极和漏极端子短路的MOS晶体管5a和6a中的每一个的栅极端子之间产生的可变静电电容器被连接。 每个MOS晶体管5a和6a的体积端子连接到电阻器19的一个端子,电压被施加到电阻器19的另一端,每个MOS晶体管5a和6的体端 a连接到电容器20的一个端子,并且电容器20的另一个端子接地。
    • 3. 发明申请
    • MOS varactor and voltage-controlled oscillator using the same
    • MOS变容二极管和压控振荡器使用相同
    • US20060202773A1
    • 2006-09-14
    • US11362186
    • 2006-02-27
    • Shigeo MasaiYuichi TateyamaTakashi OtsukaHisato Takeuchi
    • Shigeo MasaiYuichi TateyamaTakashi OtsukaHisato Takeuchi
    • H03B5/12
    • H03B5/368
    • To provide a MOS varactor in which oscillation frequency variation is small and variation in a capacitance changing voltage is small, and a voltage-controlled oscillator using the MOS varactor, as a load capacitor of an oscillating circuit composed of a feedback resistor 1, an amplifier 2, and a crystal vibrator 3, a variable electrostatic capacitor, which is generated between drain/source terminals and a gate terminal of each of MOS transistors 5a and 6a each of which source and drain terminals are short-circuited, is connected. A bulk terminal of each of the MOS transistors 5a and 6a is connected to one terminal of a resistor 19, a voltage is applied to the other terminal of the resistor 19, the bulk terminal of each of the MOS transistors 5a and 6a is connected to one terminal of a capacitor 20, and the other terminal of the capacitor 20 is grounded.
    • 为了提供其中振荡频率变化小并且电容变化电压的变化小的MOS变容二极管,以及使用MOS变容二极管作为由反馈电阻器1构成的振荡电路的负载电容器的压控振荡器,放大器 2和晶体振子3,在漏极/源极端子和源极和漏极端子短路的MOS晶体管5a和6a中的每一个的栅极端子之间产生的可变静电电容器被连接。 每个MOS晶体管5a和6a的体积端子连接到电阻器19的一个端子,电压被施加到电阻器19的另一端,每个MOS晶体管5a和6的体端 a连接到电容器20的一个端子,并且电容器20的另一个端子接地。
    • 5. 发明申请
    • Crankshaft and method for manufacturing same
    • 曲轴及其制造方法
    • US20060225814A1
    • 2006-10-12
    • US11401450
    • 2006-04-11
    • Koki MizunoHideki MatsudaSeiji KobayashiHisato TakeuchiKatsunori TakadaYutaka Kurebayashi
    • Koki MizunoHideki MatsudaSeiji KobayashiHisato TakeuchiKatsunori TakadaYutaka Kurebayashi
    • C23C8/32
    • C23C8/32C23C8/02
    • A surface of a steel, as a material for a crankshaft, is nitrocarburized. The steel contains, as alloy elements C having a content 0.10 mass % or more 0.30 mass % or less, Si having a content 0.5 mass % or more and 0.3 mass % or less, Mn having a content 0.3 mass % or more and 1.5 mass % or less, Mo having a content 0.8 mass % or more and 2.0 mass % or less, Cr having a content 0.1 mass % or more and 1.0 mass % or less, and V having a content 0.1 mass % or more and 0.5 mass % or less, with a remainder consisting of Fe and inevitable impurities. The contents of the alloy elements fall within ranges: 2.0 mass %≦Mn+Cr+Mo≦3.0 mass %, 2.3 mass %≦C+Mo+5V ≦3.7 mass %, and 2.7 mass %≦2.16 Cr+Mo+2.54V≦4.0 mass %. If a steel sample extracted from a central portion of the nitrocarburized steel free from an influence of the nitrocarburizing treatment is austenitized at 1200° C. for one hour, and cooled to a room temperature so that a cooling rate at which the steel sample passes through a temperature range between 900° C. and 300° C. is 0.5° C./second, then an area percentage of a bainite structure in steel structures is 80% or more and a Vickers hardness measured at a cross section is 260 Hv or more and 330 Hv or less. A surface hardness of a nitrocarburized layer is 650 Hv or more, a formation depth of the nitrocarburized layer is 0.3 mm or more, and a hardness of the central portion is 340 Hv or more. Thereby a crankshaft which is excellent both in the machinability and in fatigue strength, even after nitrocarburizing treatment on the surface, is provided.
    • 作为曲轴的材料的钢的表面被氮碳共渗。 钢含有含量为0.10质量%以上且0.30质量%以下的合金成分C,含有0.5质量%以上且0.3质量%以下的Si,含有0.3质量%以上且1.5质量%的Mn %以下,含量为0.8质量%以上且2.0质量%以下的Mo为0.1质量%以上且1.0质量%以下的Cr,含量为0.1质量%以上至0.5质量%的V以下, 或更少,余量由Fe和不可避免的杂质组成。 合金元素含量在2.0质量%<= Mn + Cr + Mo <= 3.0质量%,2.3质量%<= C + Mo + 5V≤3.3质量%,2.7质量%<= 2.16Cr的范围内 + Mo + 2.54V <= 4.0质量%。 如果不受氮碳共渗处理的影响,从氮碳共渗钢的中央部提取的钢样品在1200℃下奥氏体化1小时,冷却至室温,钢样品通过的冷却速度 在900℃至300℃之间的温度范围为0.5℃/秒,则钢结构中贝氏体组织的面积百分比为80%以上,横截面测得的维氏硬度为260Hv或 多达330 Hv以下。 氮碳共渗层的表面硬度为650Hv以上,氮覆层的形成深度为0.3mm以上,中央部的硬度为340Hv以上。 因此,即使在表面进行氮碳共渗处理之后,也提供了在机械加工性和疲劳强度方面优异的曲轴。
    • 10. 发明授权
    • Oscillator starting control circuit
    • 振荡器启动控制电路
    • US07492231B2
    • 2009-02-17
    • US11238145
    • 2005-09-29
    • Kei NagatomoKeigo ShinguHisato Takeuchi
    • Kei NagatomoKeigo ShinguHisato Takeuchi
    • H03B5/32
    • H03L3/00H03B5/06H03B5/36
    • An oscillator starting control circuit capable of shortening a starting time and stably controlling the starting time, and furthermore, stabilizing an oscillating frequency after starting an oscillating circuit. An oscillating circuit (1) is a crystal oscillating circuit in which an input and an output of an inverter (14) are connected to both ends of a crystal oscillator (15) and both ends of a resistor (16), the input is connected to a drain of an MOS variable capacity (10), the output is connected to a drain of an MOS variable capacity (11), a source of the MOS variable capacity (10) is connected to a fixed capacity (12), a source of the MOS variable capacity (11) is connected to a fixed capacity (13), and the other ends of the fixed capacities (12, 13) are connected to a GND.
    • 一种振荡器启动控制电路,其能够缩短启动时间并稳定地控制启动时间,此外,在启动振荡电路之后稳定振荡频率。 振荡电路(1)是晶体振荡电路,其中反相器(14)的输入和输出连接到晶体振荡器(15)的两端和电阻器(16)的两端,输入端连接 到达可变容量(10)的漏极,输出与MOS可变容量(11)的漏极连接,MOS可变容量(10)的源极连接到固定容量(12),源极 的MOS可变容量(11)连接到固定容量(13),固定容量(12,13)的另一端连接到GND。