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1. 发明申请

US20110147753A1 DISPLAY DEVICE, COPPER ALLOY FILM FOR USE THEREIN, AND COPPER ALLOY SPUTTERING TARGET 审中-公开
标题翻译：显示器件，铜合金膜及铜合金溅射靶
公开(公告)号：US20110147753A1
公开(公告)日：2011-06-23
申请号：US13056444
申请日：2009-08-14
申请人： Takashi Onishi , Aya Miki , Hiroshi Goto , Masao Mizuno , Hirotaka Ito , Katsufumi Tomihisa
发明人： Takashi Onishi , Aya Miki , Hiroshi Goto , Masao Mizuno , Hirotaka Ito , Katsufumi Tomihisa
IPC分类号： H01L29/04 , B32B17/06
CPC分类号： H01L23/53233 , C22C9/00 , C22C9/01 , H01L27/124 , H01L2924/0002 , Y10T428/265 , H01L2924/00
摘要： Disclosed is a Cu alloy film for a display device that has high adhesion to a glass substrate while maintaining a low electric resistance characteristic of Cu-based materials. The Cu alloy film is wiring in direct contact with a glass substrate on a board and contains 0.1 to 10.0 atomic % in total of one or more elements selected from the group consisting of Ti, Al, and Mg. Also disclosed is a display device comprising a thin-film transistor that comprises the Cu alloy film. In a preferred embodiment of the display device, the thin-film transistor has a bottom gate-type structure, and a gate electrode and scanning lines in the thin-film transistor comprise the Cu alloy film and are in direct contact with the glass substrate.
摘要翻译：公开了一种用于显示装置的Cu合金膜，其在保持Cu基材料的低电阻特性的同时对玻璃基板具有高粘附性。 Cu合金膜是与板上的玻璃基板直接接触的布线，并且含有0.1〜10.0原子％的一种以上选自Ti，Al，Mg的元素。还公开了包括包含Cu合金膜的薄膜晶体管的显示装置。在显示装置的优选实施例中，薄膜晶体管具有底栅型结构，并且薄膜晶体管中的栅电极和扫描线包括Cu合金膜并与玻璃基板直接接触。

2. 发明授权

US08482189B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08482189B2
公开(公告)日：2013-07-09
申请号：US13144716
申请日：2010-01-15
申请人： Hiroshi Goto , Aya Miki , Katsufumi Tomihisa , Mototaka Ochi , Takashi Onishi , Toshihiro Kugimiya
发明人： Hiroshi Goto , Aya Miki , Katsufumi Tomihisa , Mototaka Ochi , Takashi Onishi , Toshihiro Kugimiya
IPC分类号： H01L51/00
CPC分类号： H01L23/53238 , B32B15/01 , C22C9/00 , C23C14/025 , C23C14/14 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , H01L23/53233 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A display device is provided with a Cu alloy film having high adhesiveness to a transparent substrate and a low electrical resistivity. The Cu alloy film for the display device is directly brought into contact with the transparent substrate, and the Cu alloy film has the multilayer structure, which includes a first layer (Y) composed of a Cu alloy containing, in total, 2-20 atm % of at least one element selected from among a group composed of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, and Mn, and a second layer (X) which is composed of pure Cu or substantially a Cu alloy having Cu as the main component and has an electrical resistivity lower than that of the first layer (Y). The first layer (Y) is brought into contact with the transparent substrate.
摘要翻译：显示装置设置有对透明基板具有高粘附性和低电阻率的Cu合金膜。用于显示装置的Cu合金膜直接与透明基板接触，并且Cu合金膜具有多层结构，其包括由总共为2-20atm的Cu合金构成的第一层（Y）选自由Zn，Ni，Ti，Al，Mg，Ca，W，Nb和Mn组成的组中的至少一种元素的％，以及由纯Cu或基本上由Cu合金构成的第二层（X）以Cu为主成分，电阻率比第一层（Y）低。第一层（Y）与透明基板接触。

3. 发明申请

US20110273075A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20110273075A1
公开(公告)日：2011-11-10
申请号：US13144716
申请日：2010-01-15
申请人： Hiroshi Goto , Aya Miki , Katsufumi Tomihisa , Mototaka Ochi , Takashi Onishi , Toshihiro Kugimiya
发明人： Hiroshi Goto , Aya Miki , Katsufumi Tomihisa , Mototaka Ochi , Takashi Onishi , Toshihiro Kugimiya
IPC分类号： H01J1/48
CPC分类号： H01L23/53238 , B32B15/01 , C22C9/00 , C23C14/025 , C23C14/14 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , H01L23/53233 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A display device is provided with a Cu alloy film having high adhesiveness to a transparent substrate and a low electrical resistivity. The Cu alloy film for the display device is directly brought into contact with the transparent substrate, and the Cu alloy film has the multilayer structure, which includes a first layer (Y) composed of a Cu alloy containing, in total, 2-20 atm % of at least one element selected from among a group composed of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, and Mn, and a second layer (X) which is composed of pure Cu or substantially a Cu alloy having Cu as the main component and has an electrical resistivity lower than that of the first layer (Y). The first layer (Y) is brought into contact with the transparent substrate.
摘要翻译：显示装置设置有对透明基板具有高粘附性和低电阻率的Cu合金膜。用于显示装置的Cu合金膜直接与透明基板接触，并且Cu合金膜具有多层结构，其包括由总共为2-20atm的Cu合金构成的第一层（Y）选自由Zn，Ni，Ti，Al，Mg，Ca，W，Nb和Mn组成的组中的至少一种元素的％，以及由纯Cu或基本上由Cu合金构成的第二层（X）以Cu为主成分，电阻率比第一层（Y）低。第一层（Y）与透明基板接触。

4. 发明授权

US08598580B2 Wiring structure, display apparatus, and semiconductor device 有权
标题翻译：接线结构，显示装置和半导体器件
公开(公告)号：US08598580B2
公开(公告)日：2013-12-03
申请号：US13639028
申请日：2011-03-30
申请人： Yasuaki Terao , Shinya Morita , Aya Miki , Katsufumi Tomihisa , Hiroshi Goto
发明人： Yasuaki Terao , Shinya Morita , Aya Miki , Katsufumi Tomihisa , Hiroshi Goto
IPC分类号： H01L29/16
CPC分类号： H01L23/53238 , H01L21/28518 , H01L21/28556 , H01L21/3211 , H01L21/76867 , H01L27/124 , H01L29/458 , H01L29/4958 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy layer, on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer, and the Cu alloy layer. The laminated structure is composed of a (N, C, F, O) layer which contains at least one element selected from among a group composed of nitrogen, carbon, fluorine, and oxygen, and a Cu—Si diffusion layer which includes Cu and Si, in this order from the substrate side. At least one element selected from among the group composed of nitrogen, carbon, fluorine, and oxygen that composes the (N, C, F, O) layer is bonded to Si in the semiconductor layer. The Cu alloy layer is a laminated structure containing a Cu—X alloy layer (a first layer) and a second layer.
摘要翻译：公开了即使消除通常设置在Cu合金布线膜和半导体层之间的阻挡金属层以及具有优异的粘附性的布线结构，也可以获得优异的低接触电阻的布线结构。布线结构在基板上依次从基板侧设置有半导体层和Cu合金层。在半导体层和Cu合金层之间包含层叠结构。层叠结构由含有选自氮，碳，氟和氧中的至少一种元素的（N，C，F，O）层构成，Cu-Si扩散层包含Cu和 Si，从衬底侧依次。构成（N，C，F，O）层的由氮，碳，氟和氧构成的组中的至少一种元素与半导体层中的Si键合。 Cu合金层是含有Cu-X合金层（第一层）和第二层的层叠结构。

5. 发明申请

US20130026470A1 WIRING STRUCTURE, DISPLAY APPARATUS, AND SEMICONDUCTOR DEVICE 有权
标题翻译：接线结构，显示设备和半导体器件
公开(公告)号：US20130026470A1
公开(公告)日：2013-01-31
申请号：US13639028
申请日：2011-03-30
申请人： Yasuaki Terao , Shinya Morita , Aya Miki , Katsufumi Tomihisa , Hiroshi Goto
发明人： Yasuaki Terao , Shinya Morita , Aya Miki , Katsufumi Tomihisa , Hiroshi Goto
IPC分类号： H01L29/16
CPC分类号： H01L23/53238 , H01L21/28518 , H01L21/28556 , H01L21/3211 , H01L21/76867 , H01L27/124 , H01L29/458 , H01L29/4958 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy layer, on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer, and the Cu alloy layer. The laminated structure is composed of a (N, C, F, O) layer which contains at least one element selected from among a group composed of nitrogen, carbon, fluorine, and oxygen, and a Cu—Si diffusion layer which includes Cu and Si, in this order from the substrate side. At least one element selected from among the group composed of nitrogen, carbon, fluorine, and oxygen that composes the (N, C, F, O) layer is bonded to Si in the semiconductor layer. The Cu alloy layer is a laminated structure containing a Cu—X alloy layer (a first layer) and a second layer.
摘要翻译：公开了即使消除通常设置在Cu合金布线膜和半导体层之间的阻挡金属层以及具有优异的粘附性的布线结构，也可以获得优异的低接触电阻的布线结构。布线结构在基板上依次从基板侧设置有半导体层和Cu合金层。在半导体层和Cu合金层之间包含层叠结构。层叠结构由含有选自氮，碳，氟和氧中的至少一种元素的（N，C，F，O）层构成，Cu-Si扩散层包含Cu和 Si，从衬底侧依次。构成（N，C，F，O）层的由氮，碳，氟和氧构成的组中的至少一种元素与半导体层中的Si键合。 Cu合金层是含有Cu-X合金层（第一层）和第二层的层叠结构。

6. 发明授权

US08162538B2 Temperature-measuring member, temperature-measuring device, and method for measuring temperature 有权
标题翻译：温度测量部件，温度测量装置以及测量温度的方法
公开(公告)号：US08162538B2
公开(公告)日：2012-04-24
申请号：US12216207
申请日：2008-07-01
申请人： Masao Mizuno , Takayuki Hirano , Katsufumi Tomihisa
发明人： Masao Mizuno , Takayuki Hirano , Katsufumi Tomihisa
IPC分类号： G01K11/00 , G01K3/00 , G01K1/00
CPC分类号： G01K3/14 , G01K11/06 , G01K2213/00
摘要： The surface density of projections formed on a thin metal film of a temperature-measuring member having the metal film having been subjected to a temperature profile is calculated with a number-calculating section according to image data fed into an arithmetic processing unit through an optical microscope, CCD camera, and I/O board. The maximum temperature of the object is determined with the temperature-calculating unit according to the surface density and data on the maximum temperature and surface density previously stored in memory. Furthermore, a temperature-measuring member constituted by a thin aluminum film arranged on a substrate is used. A reduction in the reflectivity of the film due to projections formed on the film surface according to a temperature profile to which the member has been subjected is measured. The maximum temperature in the temperature profile is estimated according to the reduction in reflectivity.
摘要翻译：根据通过光学显微镜供给到算术处理单元的图像数据，利用数字计算部分计算出具有经受温度分布的金属膜的温度测量部件的薄金属膜上形成的突起的表面密度，CCD摄像头和I / O板。物体的最高温度由温度计算单元根据表面密度和先前存储在存储器中的最大温度和表面密度的数据来确定。此外，使用由布置在基板上的薄铝膜构成的温度测量部件。测量由于根据构件所经受的温度分布而在膜表面上形成的凸起导致的膜的反射率的降低。根据反射率的降低估算温度分布中的最高温度。

7. 发明申请

US20090016407A1 Temperature-measuring member, temperature-measuring device, and method for measuring temperature 有权
标题翻译：温度测量部件，温度测量装置以及测量温度的方法
公开(公告)号：US20090016407A1
公开(公告)日：2009-01-15
申请号：US12216207
申请日：2008-07-01
申请人： Masao Mizuno , Takayuki Hirano , Katsufumi Tomihisa
发明人： Masao Mizuno , Takayuki Hirano , Katsufumi Tomihisa
IPC分类号： G01K11/00 , G01K3/00 , G01K1/00
CPC分类号： G01K3/14 , G01K11/06 , G01K2213/00
摘要： The surface density of projections formed on a thin metal film of a temperature-measuring member having the metal film having been subjected to a temperature profile is calculated with a number-calculating section according to image data fed into an arithmetic processing unit through an optical microscope, CCD camera, and I/O board. The maximum temperature of the object is determined with the temperature-calculating unit according to the surface density and data on the maximum temperature and surface density previously stored in memory. Furthermore, a temperature-measuring member constituted by a thin aluminum film arranged on a substrate is used. A reduction in the reflectivity of the film due to projections formed on the film surface according to a temperature profile to which the member has been subjected is measured. The maximum temperature in the temperature profile is estimated according to the reduction in reflectivity.
摘要翻译：根据通过光学显微镜供给到算术处理单元的图像数据，利用数字计算部分计算出具有经受温度分布的金属膜的温度测量部件的薄金属膜上形成的突起的表面密度，CCD摄像头和I / O板。物体的最高温度由温度计算单元根据表面密度和先前存储在存储器中的最大温度和表面密度的数据来确定。此外，使用由布置在基板上的薄铝膜构成的温度测量部件。测量由于根据构件所经受的温度分布而在膜表面上形成的凸起导致的膜的反射率的降低。根据反射率的降低估算温度分布中的最高温度。

8. 发明授权

US07994503B2 Cu alloy wiring film, TFT element for flat-panel display using the Cu alloy wiring film, and Cu alloy sputtering target for depositing the Cu alloy wiring film 有权
标题翻译： Cu合金布线膜，使用Cu合金布线膜的平板显示用TFT元件和Cu合金布线膜的Cu合金溅射靶
公开(公告)号：US07994503B2
公开(公告)日：2011-08-09
申请号：US12517362
申请日：2007-12-04
申请人： Aya Hino , Katsufumi Tomihisa , Hiroshi Gotou , Takashi Onishi
发明人： Aya Hino , Katsufumi Tomihisa , Hiroshi Gotou , Takashi Onishi
IPC分类号： H01L29/04
CPC分类号： H01L21/32051 , C22C9/00 , C22C9/06 , C23C14/3414 , G02F2001/136295 , G02F2202/28 , H01B1/026 , H01L23/53233 , H01L27/124 , H01L29/4908 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film. The present invention is a wiring film 2 composing a TFT element 1 for a flat-panel display and a sputtering target used for the deposition of the film and the material comprises Cu as the main component and at least one element selected from the group consisting of Pt, Ir, Pd, and Sm by 0.01 to 0.5 atomic percent in total. The wiring film 2 is layered on a glass substrate 3 and further a transparent conductive film 5 is layered thereon while an insulating film 4 is interposed in between.
摘要翻译：本发明的目的是提供：可以使用具有低电阻率的Cu作为布线材料的Cu合金布线膜，对玻璃基板表现出高粘合性，并且避免了从玻璃基板剥离的危险玻璃基板; 用Cu合金布线膜制造的平板显示器用TFT元件; 以及用于沉积Cu合金布线膜的Cu合金溅射靶。本发明是构成用于平板显示器的TFT元件1和用于沉积膜的溅射靶的布线膜2，并且该材料包括Cu作为主要成分和至少一种选自以下的元素： Pt，Ir，Pd和Sm总计为0.01〜0.5原子％。布线膜2层叠在玻璃基板3上，另外，在其间插入有绝缘膜4，并且层叠透明导电膜5。

9. 发明申请

US20100012935A1 CU ALLOY WIRING FILM, TFT ELEMENT FOR FLAT-PANEL DISPLAY USING THE CU ALLOY WIRING FILM, AND CU ALLOY SPUTTERING TARGET FOR DEPOSITING THE CU ALLOY WIRING FILM 有权
标题翻译： CU合金线，用于使用铜合金线的平板显示器的TFT元件和用于沉积铜合金接线的CU合金溅射靶
公开(公告)号：US20100012935A1
公开(公告)日：2010-01-21
申请号：US12517362
申请日：2007-12-04
申请人： Aya Hino , Katsufumi Tomihisa , Hiroshi Gotou , Takashi Onishi
发明人： Aya Hino , Katsufumi Tomihisa , Hiroshi Gotou , Takashi Onishi
IPC分类号： H01L29/786 , H01L23/48 , C23C14/34
CPC分类号： H01L21/32051 , C22C9/00 , C22C9/06 , C23C14/3414 , G02F2001/136295 , G02F2202/28 , H01B1/026 , H01L23/53233 , H01L27/124 , H01L29/4908 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film.The present invention is a wiring film 2 composing a TFT element 1 for a flat-panel display and a sputtering target used for the deposition of the film and the material comprises Cu as the main component and at least one element selected from the group consisting of Pt, Ir, Pd, and Sm by 0.01 to 0.5 atomic percent in total. The wiring film 2 is layered on a glass substrate 3 and further a transparent conductive film 5 is layered thereon while an insulating film 4 is interposed in between.
摘要翻译：本发明的目的是提供：可以使用具有低电阻率的Cu作为布线材料的Cu合金布线膜，对玻璃基板表现出高粘合性，并且避免了从玻璃基板剥离的危险玻璃基板; 用Cu合金布线膜制造的平板显示器用TFT元件; 以及用于沉积Cu合金布线膜的Cu合金溅射靶。本发明是构成用于平板显示器的TFT元件1和用于沉积膜的溅射靶的布线膜2，并且该材料包括Cu作为主要成分和至少一种选自以下的元素： Pt，Ir，Pd和Sm总计为0.01〜0.5原子％。布线膜2层叠在玻璃基板3上，另外，在其间插入有绝缘膜4，并且层叠透明导电膜5。

10. 发明授权

US08217397B2 Thin film transistor substrate and display device 有权
标题翻译：薄膜晶体管基板和显示装置
公开(公告)号：US08217397B2
公开(公告)日：2012-07-10
申请号：US12812913
申请日：2009-01-15
申请人： Mototaka Ochi , Nobuyuki Kawakami , Katsufumi Tomihisa , Hiroshi Goto
发明人： Mototaka Ochi , Nobuyuki Kawakami , Katsufumi Tomihisa , Hiroshi Goto
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L29/458
摘要： The present invention provides a thin film transistor substrate and a display device in which a decrease in the dry etching rate of a source electrode and drain electrode is not caused; no etching residues are generated; and a barrier metal can be eliminated between a semiconductor layer and metal wires such as the source and drain electrodes. The present invention is a thin film transistor substrate having a semiconductor layer 1, a source electrode 2, a drain electrode 3, and a transparent conductive film 4, in which the source electrode 2 and drain electrode 3 are formed by patterning by means of dry etching and comprises an Al alloy thin film comprising 0.1 to 1.5 atom % of Si and/or Ge, 0.1 to 3.0 atom % of Ni and/or Co, and 0.1 to 0.5 atom % of La and/or Nd, and the thin film transistor is directly connected with the semiconductor layer 1.
摘要翻译：本发明提供一种薄膜晶体管基板和显示装置，其中不会引起源电极和漏电极的干蚀刻速率的降低; 不产生蚀刻残留物; 并且可以在半导体层和诸如源极和漏极之类的金属线之间消除阻挡金属。本发明是一种具有半导体层1，源电极2，漏电极3和透明导电膜4的薄膜晶体管基板，其中源电极2和漏电极3通过干式图案形成并且包括包含0.1至1.5原子％的Si和/或Ge，0.1至3.0原子％的Ni和/或Co，以及0.1至0.5原子％的La和/或Nd的Al合金薄膜，并且薄膜晶体管与半导体层1直接连接。

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