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1. 发明申请

US20050065833A1 Production scheduling management method and production scheduling management program 审中-公开
标题翻译：生产调度管理方法和生产调度管理方案
公开(公告)号：US20050065833A1
公开(公告)日：2005-03-24
申请号：US10668697
申请日：2003-09-23
申请人： Takashi Okaji , Hirofumi Tachiyama , Yuusaku Hirose , Shigeki Akiyama , Takeo Yamamoto
发明人： Takashi Okaji , Hirofumi Tachiyama , Yuusaku Hirose , Shigeki Akiyama , Takeo Yamamoto
IPC分类号： G06Q10/00 , G06Q30/00 , G06F17/60
CPC分类号： G06Q10/087 , G06Q10/06312 , G06Q10/06314 , G06Q10/06315 , G06Q30/0201 , G06Q30/06
摘要： Executing the steps of: receiving information of customer orders and information of prospect orders and storing into a received order database 20; dividing orders stored in said received order database 20 based on a reference master having various kinds of information about production materials registered therein, and storing the information of the orders which have been subjected to the division process to a received order division database 21; applying a process development to the orders which have been subjected to the division process, based on a basic unit master and storing into a process development database 22; specifying an optimum production starting date based on the information of orders which have been subjected to the process development and a production pattern stored in a production pattern database, performing loading, and storing results of the loading into a production planning database 23; and creating delivery date answer information, based on said optimum production starting date stored in the production planning database 23.
摘要翻译：执行以下步骤：接收客户订单的信息和潜在客户订单的信息并存储到接收的订单数据库20中; 基于具有关于其中登记的生产材料的各种信息的参考主体，存储在所述接收到的订单数据库20中的分割顺序，并将已经经过分割处理的订单的信息存储到接收到的订单分割数据库21; 对已经经过划分处理的订单，基于基本单元主体并将其存储到过程开发数据库22中来进行处理开发; 基于已经进行了处理开发的订单的信息和存储在生产模式数据库中的生产模式，执行加载并将加载的结果存储到生产计划数据库23中来指定最佳生产开始日期; 以及基于存储在生产计划数据库23中的所述最佳生产开始日期来创建交货日期回答信息。

2. 发明授权

US08440524B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08440524B2
公开(公告)日：2013-05-14
申请号：US13030790
申请日：2011-02-18
申请人： Hirokazu Fujiwara , Masaki Konishi , Jun Kawai , Takeo Yamamoto , Takeshi Endo , Takashi Katsuno , Yukihiko Watanabe , Narumasa Soejima
发明人： Hirokazu Fujiwara , Masaki Konishi , Jun Kawai , Takeo Yamamoto , Takeshi Endo , Takashi Katsuno , Yukihiko Watanabe , Narumasa Soejima
IPC分类号： H01L21/00
CPC分类号： H01L29/7811 , C21D1/09 , C22F1/10 , H01L21/0485 , H01L21/0495 , H01L21/268 , H01L21/324 , H01L21/67115 , H01L29/0615 , H01L29/0619 , H01L29/1095 , H01L29/1608 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/66068 , H01L29/7813 , H01L29/872
摘要： A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer. The step (b) comprises steps of: (b1) depositing a lower surface electrode material layer on the lower surface of the substrate, the lower surface electrode material layer being a raw material layer of the lower surface electrode, and (b2) annealing the lower surface electrode material layer with a laser to make an ohmic contact between the lower surface electrode and the substrate.
摘要翻译：一种半导体器件的制造方法，该半导体器件包括由碳化硅构成的半导体衬底，与衬底的上表面接触的上表面电极和与衬底的下表面接触的下表面电极，该方法包括以下步骤：（ a）在基板的上表面侧上形成上表面结构，（b）在基板的下表面侧形成下表面结构。步骤（a）包括以下步骤：（a1）在基板的上表面上沉积上表面电极材料层，上表面电极材料层是上表面电极的原料层，（a2）使上表面电极材料层。步骤（b）包括以下步骤：（b1）在基板的下表面上沉积下表面电极材料层，下表面电极材料层是下表面电极的原料层，（b2）使下表面电极材料层用激光器在下表面电极和衬底之间形成欧姆接触。

3. 发明授权

US07825017B2 Method of making silicon carbide semiconductor device having multi-layered passivation film with uneven surfaces 有权
标题翻译：制造具有不平坦表面的多层钝化膜的碳化硅半导体器件的方法
公开(公告)号：US07825017B2
公开(公告)日：2010-11-02
申请号：US12406578
申请日：2009-03-18
申请人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Masaki Konishi
发明人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Masaki Konishi
IPC分类号： H01L21/28 , H01L21/283 , H01L21/44 , H01L21/441 , H01L31/0312 , H01L29/47
CPC分类号： H01L29/872 , H01L21/0495 , H01L29/0611 , H01L29/063 , H01L29/1608 , H01L29/6606 , H01L29/7395 , H01L29/8083 , H01L2224/02166 , H01L2224/04042 , H01L2224/05552 , H01L2224/05567 , H01L2924/0002 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要： A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.
摘要翻译：设置为半导体芯片的碳化硅半导体器件包括衬底，衬底上的漂移层，漂移层上的绝缘膜，形成在漂移层的单元区域中的半导体元件，形成在漂移层上的表面电极并且通过所述绝缘膜的开口电耦合到所述半导体元件，以及钝化膜，所述钝化膜形成在所述电池区周围的漂移层上方以覆盖所述表面电极的外边缘。钝化膜具有开口，表面电极通过该开口暴露在外部。钝化膜的表面被制成不均匀以增加从钝化膜的开口的内边缘到沿着钝化膜的表面测量的芯片边缘的长度。

4. 发明申请

US20090224353A1 Diode 审中-公开
标题翻译：二极管
公开(公告)号：US20090224353A1
公开(公告)日：2009-09-10
申请号：US12382012
申请日：2009-03-05
申请人： Takeo Yamamoto , Takeshi Endo , Yukihiko Watanabe , Takashi Katsuno , Masayasu Ishiko , Hirokazu Fujiwara , Masaki Konishi
发明人： Takeo Yamamoto , Takeshi Endo , Yukihiko Watanabe , Takashi Katsuno , Masayasu Ishiko , Hirokazu Fujiwara , Masaki Konishi
IPC分类号： H01L29/872
CPC分类号： H01L29/872 , H01L27/0814 , H01L29/0649 , H01L29/417 , H01L29/861
摘要： A diode includes the following: an n type semiconductor region; a p type semiconductor region provided in a part of a front face of the n type semiconductor region; an anode electrode (front face electrode) which adjoins a front face of the n type semiconductor region and a front face of the p type semiconductor region while at least forming a Schottky junction on a front face of the n type semiconductor region; and an insulating region which has a right-hand side (first side) and a left-hand side (second side) adjacent to the n type semiconductor region, the right-hand side facing a second n type semiconductor region which is located below the Schottky junction, the left-hand side facing a first n type semiconductor region which is located below a pn junction between the n type semiconductor region and the p type semiconductor region.
摘要翻译：二极管包括：n型半导体区域; 设置在n型半导体区域的正面的一部分中的p型半导体区域; 邻接n型半导体区域的前表面和p型半导体区域的正面的阳极电极（正面电极），同时至少在n型半导体区域的正面上形成肖特基结; 以及具有与n型半导体区域相邻的右侧（第一侧）和左侧（第二侧）的绝缘区域，所述右侧面向位于所述n型半导体区域下方的第二n型半导体区域肖特基结，左手侧面对位于n型半导体区域和p型半导体区域之间的pn结的下方的第一n型半导体区域。

5. 发明授权

US07497801B2 Power transmission apparatus, differential gear, power distribution apparatus, and hub apparatus 失效
标题翻译：动力传动装置，差速齿轮，配电装置和集线装置
公开(公告)号：US07497801B2
公开(公告)日：2009-03-03
申请号：US10565199
申请日：2004-07-08
申请人： Takuma Kakinami , Takeo Yamamoto
发明人： Takuma Kakinami , Takeo Yamamoto
IPC分类号： F16D3/00 , F16H48/06
CPC分类号： F16D3/2237 , B60K17/165 , B60K17/22 , B60K17/30 , F16D3/84 , F16D2003/22316 , F16D2003/22323 , F16D2003/22326 , F16H48/08 , F16H57/02 , F16H57/037 , F16H2048/082 , F16H2048/085 , F16H2048/087 , Y10S464/906
摘要： A power distribution apparatus of high reliability and long life and that can be reduced in size. A differential gear identified as a power transmission mechanism includes a drive shaft, a diff case provided with an opening that opens towards the drive shaft, constant velocity universal joints connected to the drive shaft, and side gears connected to drive shafts via the constant velocity universal joints. Outer races of the constant velocity universal joints are formed at the end of drive shafts. Inner races of the constant velocity universal joints are formed at side gears. The outer races are arranged so as to block an opening.
摘要翻译：具有高可靠性和长寿命且能够减小尺寸的配电装置。被识别为动力传递机构的差动齿轮包括驱动轴，设置有朝向驱动轴开口的开口的差速箱，连接到驱动轴的等速万向接头，以及经由等速万能接头连接到驱动轴的侧齿轮关节。等速万向节的外圈形成在驱动轴的端部。等速万向节的内圈形成在侧齿轮上。外圈布置成阻挡开口。

6. 发明申请

US20080277669A1 SiC semiconductor having junction barrier Schottky device 有权
标题翻译：具有接合屏障肖特基装置的SiC半导体
公开(公告)号：US20080277669A1
公开(公告)日：2008-11-13
申请号：US12078370
申请日：2008-03-31
申请人： Eiichi Okuno , Takeo Yamamoto
发明人： Eiichi Okuno , Takeo Yamamoto
IPC分类号： H01L29/24
CPC分类号： H01L29/872 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0692 , H01L29/1608 , H01L29/6606 , H01L29/861
摘要： A semiconductor device having a JBS diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening and an ohmic electrode on the substrate; a terminal structure having a RESURF layer in the drift layer surrounding the cell region; and multiple second conductive type layers in the drift layer on an inner side of the RESURF layer contacting the Schottky electrode. The second conductive type layers are separated from each other. The second conductive type layers and the drift layer provide a PN diode. Each second conductive type layer has a depth larger than the RESURF layer.
摘要翻译：具有JBS二极管的半导体器件包括：SiC衬底; 衬底上的漂移层; 漂移层上的绝缘膜在电池区域具有开口; 具有肖特基电极的肖特基势垒二极管，其通过开口接触漂移层，并在衬底上接触欧姆电极; 具有围绕所述单元区域的所述漂移层中的RESURF层的端子结构; 以及在与肖特基电极接触的RESURF层的内侧上的漂移层中的多个第二导电类型层。第二导电类型的层彼此分离。第二导电类型层和漂移层提供PN二极管。每个第二导电类型层的深度大于RESURF层。

7. 发明申请

US20080063451A1 IMAGE FORMING SYSTEM 审中-公开
标题翻译：图像形成系统
公开(公告)号：US20080063451A1
公开(公告)日：2008-03-13
申请号：US11846167
申请日：2007-08-28
申请人： Daisaku Kamiya , Takeo Yamamoto , Shigeo Hata , Mitsuhiro Ota , Naohisa Nagata
发明人： Daisaku Kamiya , Takeo Yamamoto , Shigeo Hata , Mitsuhiro Ota , Naohisa Nagata
IPC分类号： G03G15/00
CPC分类号： G03G15/6555 , G03G2215/00426
摘要： In an image forming system having an image forming apparatus main body for forming an image on a sheet and a sheet processing apparatus having a processing portion for processing sheets received from the image forming apparatus main body, sheets are conveyed to the sheet processing apparatus during an operation before starting of an image forming operation of the image forming apparatus main body or interruption of the image forming operation, and the sheet processing apparatus performs a calibrating operation on respective processing portions using the sheets received from the image forming apparatus main body.
摘要翻译：在具有用于在片材上形成图像的图像形成装置主体和具有用于处理从图像形成装置主体接收的片材的处理部分的片材处理装置的图像形成系统中，在片材处理装置在图像形成装置主体的图像形成操作开始之前的操作或图像形成操作的中断，并且片材处理装置使用从图像形成装置主体接收的片材对各个处理部分进行校准操作。

8. 发明申请

US20060273323A1 Semiconductor device having SiC substrate and method for manufacturing the same 审中-公开
标题翻译：具有SiC衬底的半导体器件及其制造方法
公开(公告)号：US20060273323A1
公开(公告)日：2006-12-07
申请号：US11448138
申请日：2006-06-07
申请人： Takeo Yamamoto , Malhan Kumar , Yuuichi Takeuchi , Konstantin Vassilevski , Nicholas Wright
发明人： Takeo Yamamoto , Malhan Kumar , Yuuichi Takeuchi , Konstantin Vassilevski , Nicholas Wright
IPC分类号： H01L31/0312
CPC分类号： H01L21/0485 , H01L29/1608
摘要： A semiconductor device includes: a SiC substrate; a silicide layer disposed on the SiC substrate; and a carbide layer disposed on the silicide layer. The silicide layer includes a first metal, and the carbide layer includes a second metal. The first metal is Ni or Ni alloy, and the second metal is Ti, Ta or W. The device provides excellent ohmic contact and high quality surface metallization construction.
摘要翻译：半导体器件包括：SiC衬底; 设置在所述SiC衬底上的硅化物层; 以及设置在硅化物层上的碳化物层。硅化物层包括第一金属，并且碳化物层包括第二金属。第一种金属是Ni或Ni合金，第二种金属是Ti，Ta或W.该器件提供了优异的欧姆接触和高品质的表面金属化结构。

9. 发明申请

US20060240895A1 Constant velocity universal joint and outer race thereof 审中-公开
标题翻译：恒速万向节及其外圈
公开(公告)号：US20060240895A1
公开(公告)日：2006-10-26
申请号：US11395206
申请日：2006-04-03
申请人： Shogo Yamano , Takeo Yamamoto
发明人： Shogo Yamano , Takeo Yamamoto
IPC分类号： F16D3/34
CPC分类号： F16D3/2237 , F16D2003/22309 , F16D2003/22326
摘要： A Birfield joint with an increased angle is provided. The joint includes an outer race having a root portion connected to a shaft and an opening portion receiving a counterpart member. A groove is formed at the outer race so as to extend from the root portion to the opening portion. The joint further includes a ball that can roll along the groove and that contacts to the groove at a contact. The groove is formed such that a contact angle is smaller as nearer to the opening portion away from the root portion.
摘要翻译：提供了一个增加角度的Birfield接头。该接头包括具有连接到轴的根部部分和接收对方部件的开口部分的外圈。在外圈形成有从根部向开口部延伸的槽。接头还包括可沿着凹槽滚动并且在接触处与凹槽接触的球。凹槽形成为使接触角比离开根部更靠近开口部的接触角较小。

10. 发明申请

US20050257970A1 Motor-driven wheel small in size and improved in ride comfort, ease of assembly and reliability 失效
标题翻译：电机驱动轮体积小巧，乘坐舒适性好，组装方便，可靠性高
公开(公告)号：US20050257970A1
公开(公告)日：2005-11-24
申请号：US11126228
申请日：2005-05-11
申请人： Takuma Kakinami , Takeo Yamamoto , Shigekazu Yogo
发明人： Takuma Kakinami , Takeo Yamamoto , Shigekazu Yogo
IPC分类号： B60G13/16 , B60B35/14 , B60B35/18 , B60K1/00 , B60K7/00 , F16D3/20 , F16D3/2237 , F16D3/2245
CPC分类号： B60K7/00 , B60K17/046 , B60K2007/0053 , B60K2007/0061 , B60L2220/46
摘要： A motor-driven wheel includes a wheel disc, a wheel hub, a decelerator, a knuckle, a hub bearing, a constant-velocity joint, an in-wheel motor, and a spring. Since the decelerator is placed closer to the outside of the vehicle relative to the hub bearing, the space where the in-wheel motor is to be mounted can readily be secured. Further, balls are arranged along a spherical external surface of an outer race and the outer race is supported swingably in the axial direction. Thus, even when a great axial force is exerted, the axial force can be endured. The outer race can be supported swingably and rotatably with respect to the wheel hub.
摘要翻译：电动轮包括轮盘，轮毂，减速器，转向节，轮毂轴承，等速关节，轮内电动机和弹簧。由于减速器相对于轮毂轴承更靠近车辆外部，所以可以容易地确保安装轮毂马达的空间。此外，球沿着外圈的球面外表面布置，并且外圈在轴向方向上可摆动地支撑。因此，即使施加大的轴向力，也能够忍受轴向力。外圈可以相对于轮毂可摆动地和可旋转地支撑。

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