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1. 发明授权

US07859054B2 Poly-Si thin film transistor and organic light-emitting display having the same 有权
标题翻译：聚硅薄膜晶体管和有机发光显示器
公开(公告)号：US07859054B2
公开(公告)日：2010-12-28
申请号：US11561572
申请日：2006-11-20
申请人： Huaxiang Yin , Takashi Noguchi , Hyuk Lim , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Takashi Noguchi , Hyuk Lim , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L21/84 , H01L27/12
CPC分类号： H01L27/12 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.
摘要翻译：薄膜晶体管包括具有非线性电子移动路径的Si基通道，设置在沟道两侧的源极和漏极，设置在沟道上方的栅极，介于通道和栅极之间的绝缘体，以及支撑通道的基板，分别设置在通道的两侧的源极和漏极。

2. 发明申请

US20100200834A1 Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same 有权
标题翻译：结晶纳米线基板及其制造方法以及使用其制造薄膜晶体管的方法
公开(公告)号：US20100200834A1
公开(公告)日：2010-08-12
申请号：US12659776
申请日：2010-03-22
申请人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
发明人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
IPC分类号： H01L29/775 , H01L29/04 , H01L29/02 , H01L27/12
CPC分类号： H01L29/0673 , B82Y10/00 , H01L29/0665 , H01L29/66772 , H01L29/78654 , H01L29/78684 , H01L29/78696 , Y10S977/762 , Y10S977/814 , Y10S977/90 , Y10S977/932 , Y10S977/943
摘要： Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the crystalline nanowire substrate may include preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.
摘要翻译：示例性实施例涉及具有其中可以在基板上形成具有相对较细的线宽的结晶纳米线膜的结构的晶体纳米线基板及其制造方法，以及使用其制造薄膜晶体管的方法。制造结晶纳米线基板的方法可以包括制备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图案化成带状，减小线宽绝缘膜通过底切蚀刻绝缘膜的至少一个侧面，并且通过使硅膜熔化和结晶而在绝缘膜的上表面上形成自对准硅纳米线膜。

3. 发明授权

US07511381B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07511381B2
公开(公告)日：2009-03-31
申请号：US11248620
申请日：2005-10-13
申请人： Takashi Noguchi , Wenxu Xianyu , Hans S. Cho , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Hans S. Cho , Huaxiang Yin
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/02598 , H01L21/02532 , H01L21/02667 , H01L21/2026 , H01L27/1281 , H01L29/66772
摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided. The TFT includes a transparent substrate, an insulating layer on a region of the transparent substrate, a monocrystalline silicon layer, which includes source, drain, and channel regions, on the insulating layer and a gate insulating film and a gate electrode on the channel region of the monocrystalline silicon layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。 TFT包括透明基板，在透明基板的区域上的绝缘层，在绝缘层上包括源极，漏极和沟道区的单晶硅层，以及沟道区上的栅极绝缘膜和栅极电极的单晶硅层。

4. 发明申请

US20070187668A1 Crystal substrates and methods of fabricating the same 审中-公开
标题翻译：晶体基板及其制造方法
公开(公告)号：US20070187668A1
公开(公告)日：2007-08-16
申请号：US11598040
申请日：2006-11-13
申请人： Takashi Noguchi , Hans S. Cho , Wenxu Xianyu , Huaxiang Yin
发明人： Takashi Noguchi , Hans S. Cho , Wenxu Xianyu , Huaxiang Yin
IPC分类号： H01L31/00 , C30B13/02 , C30B19/00 , H01L29/04
CPC分类号： C30B25/18 , C30B23/025 , H01L21/02381 , H01L21/0242 , H01L21/02521 , H01L21/02532 , H01L21/02538 , H01L21/02639 , H01L21/02675 , H01L21/30625
摘要： A single crystal substrate and method of fabricating the same are provided. The single crystal substrate includes an insulator having a window exposing a portion of a substrate, a selective epitaxial growth layer formed on the portion of the substrate exposed through the window and a single crystalline layer formed on the insulator and the selective epitaxial growth layer using the selective epitaxial growth layer as an epitaxial seed layer.
摘要翻译：提供单晶基板及其制造方法。单晶衬底包括具有暴露衬底的一部分的窗口的绝缘体，形成在通过窗口暴露的衬底的部分上的选择性外延生长层和在绝缘体上形成的单晶层和使用所述选择性外延生长层选择性外延生长层作为外延种子层。

5. 发明授权

US08022408B2 Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same 有权
标题翻译：结晶纳米线基板及其制造方法以及使用其制造薄膜晶体管的方法
公开(公告)号：US08022408B2
公开(公告)日：2011-09-20
申请号：US12659776
申请日：2010-03-22
申请人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
发明人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
IPC分类号： H01L29/04
CPC分类号： H01L29/0673 , B82Y10/00 , H01L29/0665 , H01L29/66772 , H01L29/78654 , H01L29/78684 , H01L29/78696 , Y10S977/762 , Y10S977/814 , Y10S977/90 , Y10S977/932 , Y10S977/943
摘要： Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the crystalline nanowire substrate may include preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.
摘要翻译：示例性实施例涉及具有其中可以在基板上形成具有相对较细的线宽的结晶纳米线膜的结构的晶体纳米线基板及其制造方法，以及使用其制造薄膜晶体管的方法。制造结晶纳米线基板的方法可以包括制备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图案化成带状，减小线宽绝缘膜通过底切蚀刻绝缘膜的至少一个侧面，并且通过使硅膜熔化和结晶而在绝缘膜的上表面上形成自对准硅纳米线膜。

6. 发明申请

US20100041214A1 Single crystal substrate and method of fabricating the same 审中-公开
标题翻译：单晶基板及其制造方法
公开(公告)号：US20100041214A1
公开(公告)日：2010-02-18
申请号：US12461315
申请日：2009-08-07
申请人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Xiaoxin Zhang , Huaxiang Yin
发明人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Xiaoxin Zhang , Huaxiang Yin
IPC分类号： H01L21/20
CPC分类号： H01L21/02636 , H01L21/02381 , H01L21/0242 , H01L21/02532 , H01L21/02686
摘要： A high quality single crystal substrate and a method of fabricating the same are provided. The method of fabricating a single crystal substrate includes: forming an insulator on a substrate; forming a window in the insulator, the window exposing a portion of the substrate; forming an epitaxial growth silicon or germanium seed layer on the portion of the substrate exposed through the window; depositing a silicon or germanium material layer, which are crystallization target material layers, on the epitaxial growth silicon 6r germanium seed layer and the insulator; and crystallizing the crystallization target material layer by melting and cooling the crystallization target material layer.
摘要翻译：提供了高质量的单晶基板及其制造方法。制造单晶衬底的方法包括：在衬底上形成绝缘体; 在所述绝缘体中形成窗口，所述窗口暴露所述基板的一部分; 在通过窗户暴露的衬底的部分上形成外延生长硅或锗种子层; 在外延生长硅6r锗种子层和绝缘体上沉积作为结晶靶材料层的硅或锗材料层; 并且通过熔化和冷却结晶化目标材料层来使结晶目标材料层结晶。

7. 发明授权

US08021936B2 Method of manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US08021936B2
公开(公告)日：2011-09-20
申请号：US12382925
申请日：2009-03-26
申请人： Takashi Noguchi , Wenxu Xianyu , Hans S. Cho , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Hans S. Cho , Huaxiang Yin
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02598 , H01L21/02532 , H01L21/02667 , H01L21/2026 , H01L27/1281 , H01L29/66772
摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided. The TFT includes a transparent substrate, an insulating layer on a region of the transparent substrate, a monocrystalline silicon layer, which includes source, drain, and channel regions, on the insulating layer and a gate insulating film and a gate electrode on the channel region of the monocrystalline silicon layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。 TFT包括透明基板，在透明基板的区域上的绝缘层，在绝缘层上包括源极，漏极和沟道区的单晶硅层，以及沟道区上的栅极绝缘膜和栅极电极的单晶硅层。

8. 发明申请

US20090191673A1 Method of manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20090191673A1
公开(公告)日：2009-07-30
申请号：US12382925
申请日：2009-03-26
申请人： Takashi Noguchi , Wenxu Xianyu , Hans S. Cho , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Hans S. Cho , Huaxiang Yin
IPC分类号： H01L21/336
CPC分类号： H01L21/02598 , H01L21/02532 , H01L21/02667 , H01L21/2026 , H01L27/1281 , H01L29/66772
摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided. The TFT includes a transparent substrate, an insulating layer on a region of the transparent substrate, a monocrystalline silicon layer, which includes source, drain, and channel regions, on the insulating layer and a gate insulating film and a gate electrode on the channel region of the monocrystalline silicon layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。 TFT包括透明基板，在透明基板的区域上的绝缘层，在绝缘层上包括源极，漏极和沟道区的单晶硅层，以及沟道区上的栅极绝缘膜和栅极电极的单晶硅层。

9. 发明授权

US07566364B2 Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same 有权
标题翻译：制造取向控制单晶线的方法及其制造具有该晶体管的晶体管的方法
公开(公告)号：US07566364B2
公开(公告)日：2009-07-28
申请号：US11483586
申请日：2006-07-11
申请人： Wenxu Xianyu , Young-Soo Park , Takashi Noguchi , Hans S. Cho , Xiaoxin Zhang , Huaxiang Yin
发明人： Wenxu Xianyu , Young-Soo Park , Takashi Noguchi , Hans S. Cho , Xiaoxin Zhang , Huaxiang Yin
IPC分类号： C30B25/04
CPC分类号： C30B29/06 , C30B25/005 , C30B29/08 , C30B29/60
摘要： Provided may be a method of fabricating nanowires and a method of fabricating a transistor having the same. The method may include: forming a template layer on a substrate, the template layer having a first lateral surface and a second lateral surface facing the first surface; forming pores in the template layer, the pores disposed between the first lateral surface and the second lateral surface in the template layer and having first apertures in the first lateral surface; forming a single-crystalline material layer contacting the first apertures disposed in the first lateral surface of the template layer; forming second apertures connecting pores disposed in the second lateral surface; supplying gaseous crystal growth materials through the second apertures; and forming crystalline nanowires in the pores by crystal growth from the single-crystalline material layer. The nanowires may be made of crystalline materials, e.g., Si or SiGe, and may be formed parallel to the substrate. Higher quality nanowires, whose orientation may be controlled, may be formed. A higher quality transistor may be formed on the substrate by applying a method of fabricating the nanowires.
摘要翻译：可以提供制造纳米线的方法和制造具有该纳米线的晶体管的方法。该方法可以包括：在衬底上形成模板层，模板层具有第一侧表面和面向第一表面的第二侧表面; 在模板层中形成孔，孔设置在模板层中的第一侧表面和第二侧表面之间，并且在第一侧表面中具有第一孔; 形成与设置在模板层的第一侧表面中的第一孔接触的单晶材料层; 形成连接设置在所述第二侧表面中的孔的第二孔; 通过所述第二孔提供气态晶体生长材料; 以及通过从单晶材料层的晶体生长在孔中形成结晶纳米线。纳米线可以由例如Si或SiGe的结晶材料制成，并且可以与基底平行地形成。可以形成其取向可以被控制的更高质量的纳米线。可以通过应用制造纳米线的方法在衬底上形成更高质量的晶体管。

10. 发明授权

US07772711B2 Semiconductor device including single crystal silicon layer 有权
标题翻译：半导体器件包括单晶硅层
公开(公告)号：US07772711B2
公开(公告)日：2010-08-10
申请号：US11430117
申请日：2006-05-09
申请人： Takashi Noguchi , Hans S. Cho , Wenxu Xianyu , Do-young Kim , Jang-yeong Kwon , Huaxiang Yin , Kyung-bae Park , Xiaoxin Zhang
发明人： Takashi Noguchi , Hans S. Cho , Wenxu Xianyu , Do-young Kim , Jang-yeong Kwon , Huaxiang Yin , Kyung-bae Park , Xiaoxin Zhang
IPC分类号： H01L27/11
CPC分类号： H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/1203 , H01L29/66772 , H01L29/7842 , Y10S257/903
摘要： A semiconductor device including a substrate, a P-MOS single crystal TFT formed on the substrate, and an N-MOS single crystal TFT formed on the P-MOS single crystal TFT. The source region of the P-MOS single crystal TFT and the source region of the N-MOS single crystal TFT may be connected to each other. The P-MOS single crystal TFT and the N-MOS single crystal TFT may share a common gate. Also, the P-MOS single crystal TFT may include a single crystal silicon layer with a crystal plane of (100) and a crystal direction of . The N-MOS single crystal TFT may include a single crystal silicon layer having the same crystal direction as the single crystal silicon layer of the P-MOS single crystal TFT and having a tensile stress greater than the single crystal silicon layer of the P-MOS single crystal TFT.
摘要翻译：包括基板，形成在基板上的P-MOS单晶TFT的半导体器件和形成在P-MOS单晶TFT上的N-MOS单晶TFT。 P-MOS单晶TFT的源极区域和N-MOS单晶TFT的源极区域可以彼此连接。 P-MOS单晶TFT和N-MOS单晶TFT可以共用公共栅极。此外，P-MOS单晶TFT可以包括具有（100）的晶面并且晶体方向<100的单晶硅层。 N-MOS单晶TFT可以包括与P-MOS单晶TFT的单晶硅层相同的晶体方向的单晶硅层，其拉应力大于P-MOS的单晶硅层单晶TFT。

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