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1. 发明申请

US20110114232A1 Method for Producing Steel Sheet for Gasket, and Gasket 审中-公开
标题翻译：生产垫片和垫片钢板的方法
公开(公告)号：US20110114232A1
公开(公告)日：2011-05-19
申请号：US13054666
申请日：2009-12-02
申请人： Takashi Nakao , Nobuaki Tanaka
发明人： Takashi Nakao , Nobuaki Tanaka
IPC分类号： C22C38/40 , C21D8/02
CPC分类号： F16J15/0806 , C21D8/0226 , C21D8/0236 , C21D8/0273 , C21D9/0068 , C22C38/04 , C22C38/40
摘要： The present invention aims at providing: a method for manufacturing such a kind of gasket-oriented steel plate excellent in elasticity and formability, in a manner to allow for reduction of a breaking elongation of the steel plate to thereby improve a formability (punchability) thereof while improving a proof stress of the steel plate against a repeated stress from a discharge valve to thereby maintain a higher elasticity of the steel plate; and a gasket able to withstand the repeated stress from the discharge valve. The manufacturing method of a gasket-oriented steel plate of the present invention comprises the steps of: annealing a starting steel material having a composition of: Mn less than 0.5%, Ni less than 2.0%, and Cr less than 12.0%; and subsequently temper rolling the annealed starting steel material at a rolling reduction ratio of 10% or more; and the gasket of the present invention is formed by adopting a gasket-oriented steel plate obtained by the above manufacturing method.
摘要翻译：本发明的目的在于提供一种制造这种弹性和成形性优异的垫片取向钢板的方法，以便能够降低钢板的断裂伸长率，从而提高钢板的成形性（冲压性）同时提高钢板的抗张力，防止来自排出阀的重复应力，从而保持钢板的较高的弹性; 以及能够承受来自排放阀的重复应力的垫圈。本发明的垫片取向钢板的制造方法包括以下步骤：使Mn小于0.5％，Ni小于2.0％，Cr小于12.0％的组成为：然后以10％以上的压下率进行退火后的起始钢材的回火处理; 并且本发明的垫圈采用通过上述制造方法获得的垫圈取向钢板形成。

2. 发明授权

US08338875B2 Nonvolatile memory 有权
标题翻译：非易失性存储器
公开(公告)号：US08338875B2
公开(公告)日：2012-12-25
申请号：US12467717
申请日：2009-05-18
申请人： Takashi Nakao
发明人： Takashi Nakao
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L21/76232
摘要： Isolation trenches are formed in the main surface of a semiconductor substrate, and isolation regions. are embedded in these trenches. First insulating films, charge storage layers, a second insulating film, and a control gate are formed on the main surface of the semiconductor substrate sectioned by the isolation regions. Shielding layers are arranged in the isolation regions in such a manner that their bottom portions are lower than the channel regions and their upper portions are higher than at least the main surface of the semiconductor substrate to provide an electric and magnetic shield between their storage layers and channel regions of adjacent memory cells.
摘要翻译：隔离沟形成在半导体衬底的主表面和隔离区中。嵌入这些沟槽。在由隔离区域分割的半导体衬底的主表面上形成有第一绝缘膜，电荷存储层，第二绝缘膜和控制栅极。屏蔽层以这样的方式设置在隔离区域中，使得它们的底部低于沟道区域，并且它们的上部比至少半导体衬底的主表面高，以在其存储层之间提供电磁屏蔽，并且相邻存储单元的通道区域。

3. 发明授权

US08132481B2 Parallel mechanism 有权
标题翻译：平行机制
公开(公告)号：US08132481B2
公开(公告)日：2012-03-13
申请号：US12416235
申请日：2009-04-01
申请人： Tatsuhiko Nishida , Hideaki Nakanishi , Takashi Nakao , Manabu Yamashita
发明人： Tatsuhiko Nishida , Hideaki Nakanishi , Takashi Nakao , Manabu Yamashita
IPC分类号： B25J18/04 , B66C1/00
CPC分类号： B25J17/0266 , B25J9/0051 , B25J13/087 , B25J17/0283 , B25J19/06 , Y10T74/20305 , Y10T74/20341
摘要： A parallel mechanism includes a base, actuators attached to the base, a plurality of arms coupled together in parallel, and a sensing device. Each of the arms has a first link, one end of which is coupled to the actuator, a second link through which the other end of the first link and a bracket are coupled together, a ball joint through which one end of the second link and the other end of the first link are swingably coupled together, and a ball joint through which the other end of the second link and the bracket are swingably coupled together. Each of the ball joints includes a ball stud including a ball-shaped head, a socket swingably holding the ball-shaped head of the ball stud, and a conductive member interposed between the ball-shaped head and the socket. The sensing device senses when at least one of the plurality of ball joints is loose, based on whether or not the ball stud and the socket are electrically continuous with one another.
摘要翻译：平行机构包括基座，附接到基座的致动器，并联连接在一起的多个臂以及感测装置。每个臂具有第一连杆，其一端联接到致动器，第二连杆，第一连杆的另一端和支架联接在一起的第二连杆，第二连杆的一端和第一连杆的另一端可摆动地联接在一起，并且第二连杆和支架的另一端可摆动地联接在一起的球窝接头。每个球形接头包括一个球头螺栓，包括一个球形头部，一个可摆动地保持球头螺栓的球形头部的插座，以及插在球形头部和插座之间的导电部件。基于球头螺栓和插座是否彼此电连接，感测装置感测何时多个球窝接头中的至少一个松动。

4. 发明授权

US08114755B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08114755B2
公开(公告)日：2012-02-14
申请号：US12146143
申请日：2008-06-25
申请人： Ichiro Mizushima , Yoshio Ozawa , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi , Minako Inukai , Kaori Umezawa , Hiroaki Yamada
发明人： Ichiro Mizushima , Yoshio Ozawa , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi , Minako Inukai , Kaori Umezawa , Hiroaki Yamada
IPC分类号： H01L21/76
CPC分类号： H01L21/764
摘要： A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer.
摘要翻译：一种制造半导体器件的方法包括：去除半导体衬底的一部分以在半导体衬底的表面区域中形成突出部分和凹陷部分，在凹部中形成第一外延半导体层，形成第二外延半导体层在所述突出部分和所述第一外延半导体层上，用所述第二外延半导体层的第二部分去除所述第二外延半导体层的第一部分，以露出所述第一外延半导体层的一部分，并且蚀刻所述第一外延半导体层从第一外延半导体层的暴露部分形成在第二外延半导体层的第二部分下面的空腔。

5. 发明申请

US20100214902A1 OPTICAL PICKUP AND OPTICAL DISC DEVICE 有权
标题翻译：光学拾取和光盘设备
公开(公告)号：US20100214902A1
公开(公告)日：2010-08-26
申请号：US12703294
申请日：2010-02-10
申请人： Fumiaki Nakano , Nobuhiko Ando , Noriaki Nishi , Takashi Nakao , Hiroaki Nakagawa , Yutaka Tentaku
发明人： Fumiaki Nakano , Nobuhiko Ando , Noriaki Nishi , Takashi Nakao , Hiroaki Nakagawa , Yutaka Tentaku
IPC分类号： G11B7/135
CPC分类号： G11B7/1353 , G11B7/0903 , G11B7/131 , G11B2007/0013
摘要： An optical pickup includes: a light source outputting a light beam; an objective lens collecting the light beam on a target recording layer as a target of plural recording layers provided in an optical disc; a lens moving unit moving the objective lens in a tracking direction nearly orthogonal to track grooves helically or coaxially formed in the target recording layer; a collective lens collecting a reflected light beam formed when the light beam is reflected by the optical disc; a diffraction optical element diffracting part of the reflected first-order light beam in predetermined directions as first, second, third and fourth beams; and a photodetector receiving the first and second beams using first and second light receiving areas, and generating light reception signals, and receiving the third and fourth beams using third and fourth light receiving areas, and generates light reception signals.
摘要翻译：光拾取器包括：输出光束的光源; 将目标记录层上的光束收集成设置在光盘中的多个记录层的目标物的物镜; 透镜移动单元，沿跟踪方向移动所述物镜，所述跟踪方向与所述目标记录层中螺旋或同轴地形成的轨道槽几乎正交; 收集当光束被光盘反射时形成的反射光束的集体透镜; 衍射光学元件将预定方向的反射一次光束的一部分衍射为第一，第二，第三和第四光束; 以及光电检测器，其使用第一和第二光接收区域接收第一和第二光束，并且产生光接收信号，并且使用第三和第四光接收区域接收第三和第四光束，并且产生光接收信号。

6. 发明申请

US20100171164A1 Nonvolatile semiconductor memory device and method of manufacturing the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20100171164A1
公开(公告)日：2010-07-08
申请号：US12659703
申请日：2010-03-17
申请人： Yoshio Ozawa , Ichiro Mizushima , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi
发明人： Yoshio Ozawa , Ichiro Mizushima , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi
IPC分类号： H01L27/115 , H01L29/788
CPC分类号： H01L27/115 , H01L21/84 , H01L27/11521 , H01L27/11524 , H01L27/1203
摘要： A nonvolatile semiconductor memory device including a semiconductor substrate having a semiconductor layer and an insulating material provided on a surface thereof, a surface of the insulating material is covered with the semiconductor layer, and a plurality of memory cells provided on the semiconductor layer, the memory cells includes a first dielectric film provided by covering the surface of the semiconductor layer, a plurality of charge storage layers provided above the insulating material and on the first dielectric film, a plurality of second dielectric films provided on the each charge storage layer, a plurality of conductive layers provided on the each second dielectric film, and an impurity diffusion layer formed partially or overall at least above the insulating material and inside the semiconductor layer and at least a portion of a bottom end thereof being provided by an upper surface of the insulating material.
摘要翻译：一种非易失性半导体存储器件，包括具有半导体层和设置在其表面上的绝缘材料的半导体衬底，绝缘材料的表面被半导体层覆盖，并且设置在半导体层上的多个存储单元，存储器电池包括通过覆盖半导体层的表面而提供的第一电介质膜，设置在绝缘材料上方和第一电介质膜上的多个电荷存储层，设置在每个电荷存储层上的多个第二电介质膜，多个设置在每个第二电介质膜上的导电层，以及杂质扩散层，其部分或整体形成在绝缘材料的至少上方和半导体层的内部，并且其底端的至少一部分由绝缘体的上表面材料。

7. 发明授权

US07651930B2 Method of manufacturing semiconductor storage device 有权
标题翻译：制造半导体存储装置的方法
公开(公告)号：US07651930B2
公开(公告)日：2010-01-26
申请号：US12146802
申请日：2008-06-26
申请人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
发明人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
IPC分类号： H01L21/20
CPC分类号： H01L27/115 , H01L21/76264 , H01L21/84 , H01L27/11521 , H01L27/11524 , H01L27/1203 , H01L29/66825
摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.
摘要翻译：一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在开口部。然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。然后，在硅单晶层上形成存储单元阵列。

8. 发明授权

US07644664B2 Track guided vehicle system 有权
标题翻译：轨道导引系统
公开(公告)号：US07644664B2
公开(公告)日：2010-01-12
申请号：US10989412
申请日：2004-11-17
申请人： Takashi Nakao , Tamotsu Shiwaku , Yoichi Nakamura , Isao Fukuda , Ryosuke Tahara
发明人： Takashi Nakao , Tamotsu Shiwaku , Yoichi Nakamura , Isao Fukuda , Ryosuke Tahara
IPC分类号： B61B12/02
CPC分类号： B61B13/04
摘要： Guide tracks 56, 56 projecting in a vertical direction are provided in a right and left of a running track 50 and left and right guide rollers 20, 21 are provided on a track guided vehicle and guided using inner surfaces of the left and right guide tracks. Branching rollers 22, 23 each comprising elevating and lowering means are provided in the right and left of the track guided vehicle and outside the right and left guide tracks. Thus, branching and rectilinear progression of the track guided vehicle is controlled by switching between a state where the branching rollers 22, 23 are elevated or lowered to guide the track guided vehicle using outer surfaces of the guide tracks 56, 56 and a state where the branching rollers 22, 23 do not contact with the outer surfaces. Whether the track guided vehicle runs straight or shifts to a branch line can be controlled by contacting one of the branching rollers 22, 23 with the outer surface of the corresponding guide tracks 56, 56, which guide the guide rollers 20, 21 in the section (rectilinear progression section 52) different from the branching portion 51.
摘要翻译：引导轨道56,56在垂直方向上突出设置在行进轨道50的左侧和左侧，左右引导辊20,21设置在轨道导引车辆上，并且使用左右导轨的内表面。轨道导引车辆的右侧和左侧设置有分别包括升降装置的分支辊22,23，并且位于左右导轨的外侧。因此，轨道引导车辆的分支和直线进展通过在分支辊22,23升高或降低的状态之间切换来控制，以使用引导轨道56,56的外表面引导轨道引导车辆，并且其中分支辊22,23不与外表面接触。可以通过使分支辊22,23中的一个与相应的导轨56,56的外表面接触来控制履带导向车辆是否直线行驶或转移到分支线，该导向轨道56,56的引导辊20,21的部分（直线进行部52）。

9. 发明申请

US20090250344A1 GAS SENSOR 有权
标题翻译：气体传感器
公开(公告)号：US20090250344A1
公开(公告)日：2009-10-08
申请号：US12417074
申请日：2009-04-02
申请人： Seiji OHYA , Tomohiro Wakazono , Takashi Nakao , Hisashi Sasaki , Koji Shiotani
发明人： Seiji OHYA , Tomohiro Wakazono , Takashi Nakao , Hisashi Sasaki , Koji Shiotani
IPC分类号： G01N27/26
CPC分类号： G01N27/419 , G01N27/4067
摘要： A gas sensor (200) has a gas sensor element (10) including a first measurement chamber (16); a first pumping cell (11) having a first interior pump electrode (11c) and its counterpart electrode (11b); a second measurement chamber (18); a second pumping cell (13) that has a second interior pump electrode (13b); and a beater (50). The heater (50) has a lead section (50a); a first resistance portion (50bx) having a higher resistance than the lead portion (50a); and a main heating portion (50k) having a second resistance portion (50by) having a higher resistance than the first resistance portion (50bx) disposed at a leading end side in a longitudinal direction relative to a leading end of the first resistance portion (50bx). The second interior pump electrode (13b) is located within the first resistance portion (50bx) in the longitudinal direction.
摘要翻译：气体传感器（200）具有包括第一测量室（16）的气体传感器元件（10）。具有第一内部泵电极（11c）和其对应电极（11b）的第一泵送单元（11）; 第二测量室（18）; 具有第二内部泵电极（13b）的第二泵浦单元（13）; 和打浆机（50）。加热器（50）具有引线部（50a）; 具有比引线部分（50a）更高的电阻的第一电阻部分（50bx）; 和具有比第一电阻部分（50bx）高的第二电阻部分（50by）的主加热部分（50by），该第二电阻部分设置在相对于第一电阻部分（50bx）的前端的纵向方向上的前端侧）。第二内部泵电极（13b）在纵向方向上位于第一电阻部分（50bx）内。

10. 发明申请

US20090014755A1 DIRECT BOND SUBSTRATE OF IMPROVED BONDED INTERFACE HEAT RESISTANCE 审中-公开
标题翻译：直接粘结基板改良粘合界面耐热性
公开(公告)号：US20090014755A1
公开(公告)日：2009-01-15
申请号：US12146672
申请日：2008-06-26
申请人： Takashi Nakao
发明人： Takashi Nakao
IPC分类号： H01L21/18 , H01L27/092
CPC分类号： H01L21/2007 , H01L21/76251 , H01L21/823878 , H01L21/84
摘要： A direct bond substrate formed by bonding semiconductor substrates together, a semiconductor device using the direct bond substrate and a manufacturing method thereof are disclosed. A nitride film, oxynitride film, carbide film or an oxide film containing carbon is provided on the bonded interface of the semiconductor substrates in the direct bond substrate.
摘要翻译：公开了通过将半导体衬底接合在一起形成的直接接合衬底，使用直接接合衬底的半导体器件及其制造方法。在直接接合衬底中的半导体衬底的接合界面上设置有氮化物膜，氧氮化物膜，碳化物膜或含有碳的氧化物膜。

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