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1. 发明申请

US20080049004A1 LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置
公开(公告)号：US20080049004A1
公开(公告)日：2008-02-28
申请号：US11775520
申请日：2007-07-10
申请人： Takashi Kunimori , Yutaka SANO , Masanori YASUMORI , Yukiya HIRABAYASHI , Yasushi YAMAZAKI
发明人： Takashi Kunimori , Yutaka SANO , Masanori YASUMORI , Yukiya HIRABAYASHI , Yasushi YAMAZAKI
IPC分类号： G09G3/36 , G02F1/1335
CPC分类号： G02F1/13318 , G09G2360/144
摘要： A liquid crystal display device of the invention has: a display panel with an active matrix substrate 2 and a second substrate of transparent material deposed opposite that substrate; an illuminating unit that illuminates the display panel; and a photosensing unit that is provided on the active matrix substrate and has an ambient light photosensor that senses external light. The ambient light photosensor is constituted of a thin film transistor. At least the source electrode SL and drain electrode DL of the thin film transistor are covered by a shielding transparent electrode 6, with transparent insulator 3 and 5 interposed. The transparent electrode 6 is electrically connected to the drain electrode DL, and moreover is connected to a power source supplying constant voltage. Thanks to such structure, a display device is provided in which the ambient light photosensor is built into a panel substrate so as not to be affected by external noise and the peripheral circuits.
摘要翻译：本发明的液晶显示装置具有：具有有源矩阵基板2的显示面板和与该基板相反的透明材料的第二基板; 照明单元，其照亮所述显示面板; 以及光敏单元，其设置在有源矩阵基板上并具有感测外部光的环境光传感器。环境光电传感器由薄膜晶体管构成。至少薄膜晶体管的源电极S L L和漏电极D L L被屏蔽透明电极6覆盖，透明绝缘体3和5被插入。透明电极6与漏电极D L1电连接，此外与提供恒定电压的电源连接。由于具有这样的结构，所以提供了一种显示装置，其中环境光传感器被内置在面板基板中，以免受到外部噪声和外围电路的影响。

2. 发明申请

US20090085854A1 DISPLAY UNIT 有权
标题翻译：显示单元
公开(公告)号：US20090085854A1
公开(公告)日：2009-04-02
申请号：US12192157
申请日：2008-08-15
申请人： Takashi KUNIMORI , Yasushi YAMAZAKI , Takashi SATO , Masanori YASUMORI
发明人： Takashi KUNIMORI , Yasushi YAMAZAKI , Takashi SATO , Masanori YASUMORI
IPC分类号： G09G3/36
CPC分类号： G09G3/3406 , G09G2320/043 , G09G2360/144
摘要： The invention provides a display unit that has a display area and first and second photodetectors 10a and 10b on a substrate and outputs as a light intensity signal S a light intensity detected by the first and second photodetectors 10a and 10b. The first photodetector 10a includes a first photodetection circuit LS1 outputting a first output signal Sa to an ambient light photosensor reader 20, and the second photodetector 10b includes a light-reducing unit and a second photodetection circuit LS2 outputting a second output signal Sb to an ambient light photosensor reader 20. The ambient light photosensor reader 20 includes a photodegradation factor calculator 21 calculating a photodegradation reparation factor K, a photodegradation rate calculator 22 deriving a photodegradation rate D based on the photodegradation reparation factor K, and a light signal output unit 24 outputting a light intensity signal S based on the photodegradation rate D.
摘要翻译：本发明提供了一种在基板上具有显示区域和第一和第二光电检测器10a和10b的显示单元，并且作为光强度信号S输出由第一和第二光电检测器10a和10b检测的光强度。第一光检测器10a包括将第一输出信号Sa输出到环境光光传感器读取器20的第一光电检测电路LS1，第二光检测器10b包括将第二输出信号Sb输出到环境的光减少单元和第二光电检测电路LS2 环境光光传感器读取器20包括计算光降解修复因子K的光降解因子计算器21，基于光降解修复因子K导出光降解率D的光降解率计算器22，以及光信号输出单元24，其输出基于光降解速率D的光强度信号S.

3. 发明申请

US20080297466A1 LIQUID CRYSTAL DISPLAY, ELECTRONIC DEVICE, AND METHOD FOR CONTROLLING BRIGHTNESS OF ILLUMINATION UNIT OF LIQUID CRYSTAL DISPLAY 失效
标题翻译：液晶显示器，电子设备及控制液晶显示器照明单元亮度的方法
公开(公告)号：US20080297466A1
公开(公告)日：2008-12-04
申请号：US12127863
申请日：2008-05-28
申请人： Takashi KUNIMORI , Yasushi YAMAZAKI , Masanori YASUMORI
发明人： Takashi KUNIMORI , Yasushi YAMAZAKI , Masanori YASUMORI
IPC分类号： G02F1/13357 , G09G3/36
CPC分类号： G09G3/3406 , G02F1/136209 , G09G2320/0626 , G09G2360/144
摘要： A liquid crystal display according to an embodiment of the present invention includes a liquid crystal display panel, an illumination unit for the liquid crystal display panel, a plurality of photodetectors, and a control unit Cnt to control the brightness of the illumination unit. The photodetectors are TFT ambient light photosensors LS1 to LS3, for example, which produce outputs that require time to reach a predetermined value, which the time is correlated with the intensity of ambient light. Detection circuits coupled to the photodetectors include circuits (Cmp1 to Cmp3) logically inverted when an output from the TFT ambient light photosensors LS1 to LS3 reaches a predetermined value. The control unit Cnt includes a discrimination implement Maj that determines that the intensity of ambient light has changed when outputs from the majority of the detection circuits are logically inverted. The above-mentioned structure provides a liquid crystal display that does not use plurality of interface circuits nor A/D converters, nor experience frequent malfunctions for automatic control of the brightness of the illumination unit according to the intensity of ambient light.
摘要翻译：根据本发明的实施例的液晶显示器包括液晶显示面板，用于液晶显示面板的照明单元，多个光电检测器以及控制单元Cnt以控制照明单元的亮度。光电检测器是例如产生需要时间达到预定值的输出的TFT环境光感光体LS1至LS3，其时间与环境光的强度相关。耦合到光电检测器的检测电路包括当TFT环境光感光体LS1至LS3的输出达到预定值时逻辑反转的电路（Cmp1至Cmp3）。控制单元Cnt包括鉴别工具Maj，其判定当来自大多数检测电路的输出逻辑反转时环境光的强度已经改变。上述结构提供了不使用多个接口电路和A / D转换器的液晶显示器，也不经历根据环境光的强度来自动控制照明单元的亮度的频繁故障。

4. 发明申请

US20100052713A1 DISPLAY DEVICE AND TEST PROBE FOR TESTING DISPLAY DEVICE 有权
标题翻译：用于测试显示装置的显示装置和测试探针
公开(公告)号：US20100052713A1
公开(公告)日：2010-03-04
申请号：US12503921
申请日：2009-07-16
申请人： Takashi KUNIMORI , Yasushi YAMAZAKI , Hajime NAKAO
发明人： Takashi KUNIMORI , Yasushi YAMAZAKI , Hajime NAKAO
IPC分类号： G01R31/02 , H02H9/00 , G01R31/00
CPC分类号： G09G3/006 , G09G3/3406 , G09G3/3648 , G09G2320/0626 , G09G2330/04 , G09G2360/144
摘要： A display device is provided with a light detection unit that detects the intensity of ambient light and is capable of automatically controlling the luminosity of an illumination unit and/or the luminosity of the display device on the basis of the intensity of ambient light detected by the light detection unit. Moreover, the display device makes it possible to easily conduct a test on light-sensor characteristics.
摘要翻译：显示装置设置有光检测单元，其检测环境光的强度并且能够基于由所述显示装置检测到的环境光的强度自动地控制照明单元的亮度和/或显示装置的亮度光检测单元。此外，显示装置使得可以容易地进行光传感器特性的测试。

5. 发明申请

US20080048230A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080048230A1
公开(公告)日：2008-02-28
申请号：US11894840
申请日：2007-08-22
申请人： Yasushi YAMAZAKI
发明人： Yasushi YAMAZAKI
IPC分类号： H01L27/108 , H01L21/336
CPC分类号： H01L29/66621 , H01L21/26513 , H01L27/10876 , H01L29/4236
摘要： A semiconductor device including a semiconductor substrate and a recessed transistor provided on the semiconductor substrate, wherein the recessed transistor includes a recess formed in a surface of the semiconductor substrate, an insulating film provided on a surface in the recess, a gate electrode at least partly buried in the recess, and a first diffusion layer and a second diffusion layer formed in a surface of the semiconductor substrate with the gate electrode located between the first diffusion layer and the second diffusion layer, and wherein the insulating film includes a thicker film portion between the first diffusion layer and the gate electrode, the thicker film portion being thicker than a portion of the insulating film located between the gate electrode and a channel region of the recessed transistor.
摘要翻译：一种半导体器件，包括设置在所述半导体衬底上的半导体衬底和凹入晶体管，其中所述凹入晶体管包括形成在所述半导体衬底的表面中的凹部，设置在所述凹部中的表面上的绝缘膜，至少部分埋置在所述凹部中，以及形成在所述半导体衬底的表面中的所述第一扩散层和第二扩散层，所述栅电极位于所述第一扩散层和所述第二扩散层之间，并且其中所述绝缘膜包括：第一扩散层和栅电极，较厚的膜部分比位于栅极电极和凹陷晶体管的沟道区域之间的绝缘膜的部分厚。

6. 发明申请

US20110241003A1 ELECTRO-OPTICAL DEVICE SUBSTRATE, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS 有权
标题翻译：电光器件基板，电光器件和电子设备
公开(公告)号：US20110241003A1
公开(公告)日：2011-10-06
申请号：US13078197
申请日：2011-04-01
申请人： Yasushi YAMAZAKI , Takashi SATO
发明人： Yasushi YAMAZAKI , Takashi SATO
IPC分类号： H01L33/08
CPC分类号： H01L27/1225 , G02F1/167 , H01L27/1255
摘要： In an electro-optical device substrate, first and second pixel switching elements each include a gate electrode formed of a first conductive film, a gate insulation film formed of a first insulation film, a semiconductor layer, a source electrode formed of a second conductive film, and a drain electrode formed of the second conductive film. A first storage capacitor includes a first storage capacitor electrode formed of the second conductive film, a protective film formed of a second insulation film so as to over at least the first storage capacitor electrode, and a pixel electrode formed so as to overlap with the first storage capacitor electrode at least partially with the protective film interposed therebetween.
摘要翻译：在电光器件基板中，第一和第二像素开关元件各自包括由第一导电膜形成的栅极电极，由第一绝缘膜形成的栅极绝缘膜，半导体层，由第二导电膜形成的源极以及由第二导电膜形成的漏电极。第一存储电容器包括由第二导电膜形成的第一存储电容电极，至少形成在第一保持电容电极上的由第二绝缘膜形成的保护膜，以及形成为与第一导电膜重叠的像素电极保持电容电极至少部分地保留有保护膜。

7. 发明申请

US20100127317A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100127317A1
公开(公告)日：2010-05-27
申请号：US12626797
申请日：2009-11-27
申请人： Yasushi YAMAZAKI
发明人： Yasushi YAMAZAKI
IPC分类号： H01L27/108 , H01L21/02
CPC分类号： H01L28/90 , H01L27/10852 , H01L27/10894 , H01L27/10897
摘要： A semiconductor device includes a memory cell array region including a plurality of memory cells, an annular groove surrounding the memory cell array region, a protective insulating film covering the inner wall of the annular groove, and a conductor filling the annular groove.
摘要翻译：半导体器件包括包括多个存储单元的存储单元阵列区域，围绕存储单元阵列区域的环形槽，覆盖环形槽的内壁的保护绝缘膜和填充环形槽的导体。

8. 发明申请

US20110024754A1 ACTIVE MATRIX SUBSTRATE, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS 有权
标题翻译：有源矩阵基板，电光器件和电子设备
公开(公告)号：US20110024754A1
公开(公告)日：2011-02-03
申请号：US12832151
申请日：2010-07-08
申请人： Yasushi YAMAZAKI
发明人： Yasushi YAMAZAKI
IPC分类号： H01L33/08
CPC分类号： G02F1/136209 , G02F1/136204 , G02F2202/22
摘要： An active matrix substrate including: a substrate; a display section having a pixel circuit formed on the substrate; and a protection circuit connected to an interconnection of the display section. The protection circuit has a diode-connected transistor, an insulating layer provided so as to cover the transistor, and a light-shielding layer provided in a region above the insulating layer so as to face at least a channel region in the transistor and electrically connected to at least any one of a gate electrode and a source electrode of the transistor.
摘要翻译：一种有源矩阵基板，包括：基板; 显示部，其具有形成在所述基板上的像素电路; 以及与显示部的互连连接的保护电路。保护电路具有二极管连接的晶体管，设置为覆盖晶体管的绝缘层和设置在绝缘层上方的区域中的遮光层，以便至少面对晶体管中的沟道区域并电连接至晶体管的栅电极和源电极中的至少任一个。

9. 发明申请

US20090267121A1 SOLID-STATE IMAGE PICKUP DEVICE 审中-公开
标题翻译：固态图像拾取器件
公开(公告)号：US20090267121A1
公开(公告)日：2009-10-29
申请号：US12366313
申请日：2009-02-05
申请人： Yukimasa ISHIDA , Takashi SATO , Yasushi YAMAZAKI
发明人： Yukimasa ISHIDA , Takashi SATO , Yasushi YAMAZAKI
IPC分类号： H01L31/00
CPC分类号： H01L27/14658
摘要： A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film.
摘要翻译：提供一种固态图像拾取装置，其包括基板; 形成在基板上的晶体管; 光电转换元件，包括连接到晶体管的漏极或源极的第一电极，堆叠在第一电极上的半导体层和堆叠在半导体层上的第二电极; 设置在所述第二电极上的绝缘层; 以及形成在绝缘层上的与绝缘层至少包含无机绝缘膜连接的绝缘层上的偏置线，偏置线经由形成在绝缘层中的接触孔连接到第二电极，并且半导体层的侧表面与无机绝缘膜接触。

10. 发明申请

US20090085108A1 SEMICONDUCTOR DEVICE HAVING CELL TRANSISTOR WITH RECESS CHANNEL STRUCTURE 失效
标题翻译：具有带通道结构的单元晶体管的半导体器件
公开(公告)号：US20090085108A1
公开(公告)日：2009-04-02
申请号：US12257114
申请日：2008-10-23
申请人： Yasushi YAMAZAKI
发明人： Yasushi YAMAZAKI
IPC分类号： H01L21/336 , H01L27/088
CPC分类号： H01L29/66621 , H01L21/823807 , H01L21/823842 , H01L27/10873 , H01L27/10894 , H01L29/6659 , H01L29/7833 , H01L29/7835
摘要： The present invention provides a semiconductor device comprising: a dual-gate peripheral transistor having a transistor structure of surface channel nMOSFET and a transistor structure of surface channel pMOSFET; and a cell transistor having an nMOSFET structure with a recess channel structure, a gate electrode of the cell transistor having an N-type polysilicon layer which contains of N-type impurities at an approximately constant concentration.
摘要翻译：本发明提供一种半导体器件，包括：具有表面沟道nMOSFET的晶体管结构和表面沟道pMOSFET的晶体管结构的双栅极外围晶体管; 以及具有凹槽通道结构的nMOSFET结构的单元晶体管，单元晶体管的栅电极具有N型多晶硅层，该N型多晶硅层含有近似恒定浓度的N型杂质。

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