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1. 发明授权

US09297061B2 Transparent electroconductive film and process for producing the same 有权
标题翻译：透明导电膜及其制造方法
公开(公告)号：US09297061B2
公开(公告)日：2016-03-29
申请号：US12449303
申请日：2008-02-15
申请人： Takashi Kuchiyama , Kenji Yamamoto
发明人： Takashi Kuchiyama , Kenji Yamamoto
IPC分类号： B32B9/00 , C23C14/08 , C03C17/34
CPC分类号： C23C14/086 , C03C17/3441 , C03C2217/944 , C03C2218/365
摘要： In a transparent electroconductive film including a transparent substrate and a transparent electroconductive oxide layer disposed on the transparent substrate, when the transparent electroconductive oxide layer is composed of zinc oxide, the surface resistivity of the transparent electroconductive oxide layer increases with time and thus it has been difficult to obtain a transparent electroconductive film stable against an environmental variation. Consequently, hard carbon films are provided on the surfaces of a transparent electroconductive oxide layer including at least one layer and containing zinc oxide as a main component in “the order of transparent substrate-hard carbon film-transparent electroconductive oxide layer-hard carbon film” or “the order of hard carbon film-transparent substrate-transparent electroconductive oxide layer-hard carbon film”. Alternatively, an organosilicon compound covering layer is provided on a surface of the transparent electroconductive oxide layer. Thereby, the water contact angle can be 75 degrees or more, and an increase in the resistivity of the transparent electroconductive oxide layer can be suppressed.
摘要翻译：在透明导电膜包括透明基板和透明导电氧化物层的透明导电膜上，当透明导电氧化物层由氧化锌组成时，透明导电氧化物层的表面电阻率随着时间的推移而增加，难以获得对环境变化稳定的透明导电膜。因此，在“透明基板 - 硬质碳膜透明导电氧化物层 - 硬质碳膜”的顺序，在包含至少一层并含有氧化锌作为主要成分的透明导电氧化物层的表面上设置硬质碳膜，或“硬碳膜透明基板透明导电氧化物层 - 硬质碳膜的顺序”。或者，在透明导电氧化物层的表面上设置有机硅化合物覆盖层。因此，水接触角可以为75度以上，并且可以抑制透明导电氧化物层的电阻率的增加。

2. 发明授权

US08410355B2 Thin film photoelectric conversion device having a stacked transparent oxide and carbon intermediate layer 有权
标题翻译：具有堆叠的透明氧化物和碳中间层的薄膜光电转换装置
公开(公告)号：US08410355B2
公开(公告)日：2013-04-02
申请号：US12740338
申请日：2008-10-30
申请人： Tomomi Meguro , Mitsuru Ichikawa , Fumiyasu Sezaki , Kunta Yoshikawa , Takashi Kuchiyama , Kenji Yamamoto
发明人： Tomomi Meguro , Mitsuru Ichikawa , Fumiyasu Sezaki , Kunta Yoshikawa , Takashi Kuchiyama , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/076 , H01L31/02168 , H01L31/022466 , H01L31/056 , H01L31/075 , H01L31/077 , H01L31/078 , H01L31/1804 , H01L31/202 , Y02E10/52 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： This invention intends to develop a technique for forming an interlayer with excellent optical characteristics and to provide a photoelectric conversion device having high conversion efficiency. To realize this purpose, a series connection through an intermediate layer is formed in the thin-film photoelectric conversion device of the invention, and the interlayer is a transparent oxide layer in its front surface and n pairs of layers stacked therebehind (n is an integer of 1 or more), wherein each of the pair of layers is a carbon layer and a transparent oxide layer stacked in this order. Film thicknesses of each layer are optimized to improve wavelength selectivity and stress resistance while keeping the series resistance.
摘要翻译：本发明旨在开发一种形成具有优异光学特性的中间层的技术，并提供具有高转换效率的光电转换装置。为了实现这一目的，在本发明的薄膜光电转换装置中形成了通过中间层的串联连接，并且中间层是其前表面的透明氧化物层，并且在其间堆叠有n对层（n是整数）为1以上），其中，所述一对层中的每一层为依次层叠的碳层和透明氧化物层。优化每个层的膜厚度以在保持串联电阻的同时提高波长选择性和抗应力。

3. 发明申请

US20110163448A1 SUBSTRATE HAVING A TRANSPARENT ELECTRODE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：具有透明电极的基板及其制造方法
公开(公告)号：US20110163448A1
公开(公告)日：2011-07-07
申请号：US13061943
申请日：2009-08-26
申请人： Takashi Kuchiyama , Kenji Yamamoto
发明人： Takashi Kuchiyama , Kenji Yamamoto
IPC分类号： H01L23/532 , C23C14/35 , C23C14/08
CPC分类号： G06F3/041 , G02F1/13439 , G06F2203/04103 , H01L31/022483 , H01L31/0392 , H01L31/03921 , H01L31/1884 , Y02E10/50
摘要： A zinc oxide transparent electroconductive oxide has been difficult to use as a substrate having a transparent electrode because the oxide, when configured as a thin film, because of increased resistivity due to air and/or moisture exposure. Though doping can inhibit increase of resistance to some extent, there has been difficulty in selecting a type and an amount of a doping substance and because doping causes high initial resistance. A substrate having a transparent electrode with stable resistivity against various environments is produced by a magnetron sputtering method using a target composed of a zinc oxide transparent electroconductive oxide containing 0.50 to 2.75% silicon dioxide by weight relative to the oxide.
摘要翻译：氧化锌透明导电氧化物难以用作具有透明电极的基板，因为当被配置为薄膜时，由于空气和/或水分暴露导致的电阻率增加，氧化物。虽然掺杂可以在某种程度上抑制电阻的增加，但是在选择掺杂物质的类型和量方面存在困难，并且因为掺杂引起高的初始电阻。通过使用由相对于氧化物的重量计含有0.50〜2.75％二氧化硅的氧化锌透明导电氧化物构成的靶的磁控溅射法，制造具有对各种环境具有稳定电阻率的透明电极的基板。

4. 发明申请

US20100243058A1 THIN-FILM PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：薄膜光电转换装置
公开(公告)号：US20100243058A1
公开(公告)日：2010-09-30
申请号：US12740338
申请日：2008-10-30
申请人： Tomomi Meguro , Mitsuru Ichikawa , Fumiyasu Sezaki , Kunta Yoshikawa , Takashi Kuchiyama , Kenji Yamamoto
发明人： Tomomi Meguro , Mitsuru Ichikawa , Fumiyasu Sezaki , Kunta Yoshikawa , Takashi Kuchiyama , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/076 , H01L31/02168 , H01L31/022466 , H01L31/056 , H01L31/075 , H01L31/077 , H01L31/078 , H01L31/1804 , H01L31/202 , Y02E10/52 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： This invention intends to develop a technique for forming an interlayer with excellent optical characteristics and to provide a photoelectric conversion device having high conversion efficiency. To realize this purpose, a series connection through an intermediate layer is formed in the thin-film photoelectric conversion device of the invention, and the interlayer is a transparent oxide layer in its front surface and n pairs of layers stacked therebehind (n is an integer of 1 or more), wherein each of the pair of layers is a carbon layer and a transparent oxide layer stacked in this order. Film thicknesses of each layer are optimized to improve wavelength selectivity and stress resistance while keeping the series resistance.An embodiment of the photoelectric conversion device is characterized in that; a transparent insulating substrate is located on the light incidence side, and a transparent conductive layer, at least one photoelectric conversion unit, a transparent electrode layer having electrical conductivity as typified by zinc oxide, a hard carbon layer having electrical conductivity as typified by diamond-like carbon, and a high reflecting electrode layer are stacked in this order on an opposite surface from a light incidence side of the transparent insulating substrate.
摘要翻译：本发明旨在开发一种形成具有优异光学特性的中间层的技术，并提供具有高转换效率的光电转换装置。为了实现这一目的，在本发明的薄膜光电转换装置中形成了通过中间层的串联连接，并且中间层是其前表面的透明氧化物层，并且在其间堆叠有n对层（n是整数）为1以上），其中，所述一对层中的每一层为依次层叠的碳层和透明氧化物层。优化每个层的膜厚度以在保持串联电阻的同时提高波长选择性和抗应力。光电转换装置的一个实施例的特征在于：透明绝缘基板位于光入射侧，透明导电层，至少一个光电转换单元，以氧化锌为代表的导电性的透明电极层，以金刚石为代表的导电性的硬碳层，在与透明绝缘性基板的光入射侧相反的面上依次层叠高反射电极层。

5. 发明授权

US09276163B2 Method for manufacturing silicon-based solar cell 有权
标题翻译：硅基太阳能电池的制造方法
公开(公告)号：US09276163B2
公开(公告)日：2016-03-01
申请号：US13879367
申请日：2011-10-14
申请人： Toshihiko Uto , Takashi Kuchiyama , Daisuke Adachi , Kenji Yamamoto
发明人： Toshihiko Uto , Takashi Kuchiyama , Daisuke Adachi , Kenji Yamamoto
IPC分类号： H01L31/20 , H01L31/18 , H01L31/0747
CPC分类号： H01L31/208 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Disclosed is a method for manufacturing a crystalline silicon-based photoelectric conversion device having a first intrinsic silicon-based layer, a p-type silicon-based layer and a first transparent electroconductive layer, positioned in this order on one surface of a conductive single-crystal silicon substrate, and having a second intrinsic silicon-based layer, an n-type silicon-based layer and a second transparent electroconductive layer, positioned in this order on the other surface of the conductive single-crystal silicon substrate. In the present invention, a heat treatment is carried out after at least one of the transparent electroconductive layers is formed. This heat treatment is carried out at a temperature of less than 200° C. under a hydrogen-containing atmosphere.
摘要翻译：公开了一种具有第一本征硅基层，p型硅基层和第一透明导电层的晶体硅基光电转换器件的制造方法，晶体硅衬底，并且具有第二本征硅基层，n型硅基层和第二透明导电层，其依次位于导电单晶硅衬底的另一表面上。在本发明中，在形成至少一个透明导电层之后进行热处理。该热处理在含氢气氛下在小于200℃的温度下进行。

6. 发明授权

US08895427B2 Substrate having a transparent electrode and method for producing the same 有权
标题翻译：具有透明电极的基板及其制造方法
公开(公告)号：US08895427B2
公开(公告)日：2014-11-25
申请号：US13061943
申请日：2009-08-26
申请人： Takashi Kuchiyama , Kenji Yamamoto
发明人： Takashi Kuchiyama , Kenji Yamamoto
IPC分类号： H01L21/44
CPC分类号： G06F3/041 , G02F1/13439 , G06F2203/04103 , H01L31/022483 , H01L31/0392 , H01L31/03921 , H01L31/1884 , Y02E10/50
摘要： A zinc oxide transparent electroconductive oxide has been difficult to use as a substrate having a transparent electrode because the oxide, when configured as a thin film, because of increased resistivity due to air and/or moisture exposure. Though doping can inhibit increase of resistance to some extent, there has been difficulty in selecting a type and an amount of a doping substance and because doping causes high initial resistance. A substrate having a transparent electrode with stable resistivity against various environments is produced by a magnetron sputtering method using a target composed of a zinc oxide transparent electroconductive oxide containing 0.50 to 2.75% silicon dioxide by weight relative to the oxide.
摘要翻译：氧化锌透明导电氧化物难以用作具有透明电极的基板，因为当被配置为薄膜时，由于空气和/或水分暴露导致的电阻率增加，氧化物。虽然掺杂可以在某种程度上抑制电阻的增加，但是在选择掺杂物质的类型和量方面存在困难，并且因为掺杂引起高的初始电阻。通过使用由相对于氧化物的重量计含有0.50〜2.75％二氧化硅的氧化锌透明导电氧化物构成的靶的磁控溅射法，制造具有对各种环境具有稳定电阻率的透明电极的基板。

7. 发明申请

US20130203210A1 METHOD FOR MANUFACTURING SILICON-BASED SOLAR CELL 有权
标题翻译：制造硅基太阳能电池的方法
公开(公告)号：US20130203210A1
公开(公告)日：2013-08-08
申请号：US13879367
申请日：2011-10-14
申请人： Toshihiko Uto , Takashi Kuchiyama , Daisuke Adachi , Kenji Yamamoto
发明人： Toshihiko Uto , Takashi Kuchiyama , Daisuke Adachi , Kenji Yamamoto
IPC分类号： H01L31/20
CPC分类号： H01L31/208 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Disclosed is a method for manufacturing a crystalline silicon-based photoelectric conversion device having a first intrinsic silicon-based layer, a p-type silicon-based layer and a first transparent electroconductive layer, positioned in this order on one surface of a conductive single-crystal silicon substrate, and having a second intrinsic silicon-based layer, an n-type silicon-based layer and a second transparent electroconductive layer, positioned in this order on the other surface of the conductive single-crystal silicon substrate. In the present invention, a heat treatment is carried out after at least one of the transparent electroconductive layers is formed. This heat treatment is carried out at a temperature of less than 200° C. under a hydrogen-containing atmosphere.
摘要翻译：公开了一种具有第一本征硅基层，p型硅基层和第一透明导电层的晶体硅基光电转换器件的制造方法，晶体硅衬底，并且具有第二本征硅基层，n型硅基层和第二透明导电层，其依次位于导电单晶硅衬底的另一表面上。在本发明中，在形成至少一个透明导电层之后进行热处理。该热处理在含氢气氛下在小于200℃的温度下进行。

8. 发明申请

US20130146132A1 CRYSTALLINE SILICON-BASED SOLAR CELL 审中-公开
标题翻译：晶体硅基太阳能电池
公开(公告)号：US20130146132A1
公开(公告)日：2013-06-13
申请号：US13816216
申请日：2011-08-03
申请人： Takashi Kuchiyama , Kenji Yamamoto , Masashi Yoshimi
发明人： Takashi Kuchiyama , Kenji Yamamoto , Masashi Yoshimi
IPC分类号： H01L31/0224
CPC分类号： H01L31/022466 , H01L31/022475 , H01L31/0747 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The present invention improves a photoelectric conversion efficiency of a crystalline silicon-based solar cell. The crystalline silicon based solar cell includes a silicon-based thin-film of a first conductivity type and a first transparent electrode layer, in this order, on one surface of a conductive single-crystal silicon substrate, and a silicon-based thin-film of the opposite conductivity type and a second transparent electrode layer, in this order, on the other surface of the conductive single-crystal silicon substrate. The first and second transparent electrode layers are each formed of a transparent conductive metal oxide, and the first transparent electrode layer preferably has at least two layers, and a total thickness of 50 to 120 nm, wherein the carrier density of the substrate-side electroconductive layer is higher than that of the surface-side electroconductive layer, and the carrier density of the surface-side electroconductive layer is 1 to 4×1020 cm−3.
摘要翻译：本发明提高了晶体硅系太阳能电池的光电转换效率。晶体硅基太阳能电池包括在导电单晶硅衬底的一个表面上的第一导电类型的硅基薄膜和第一透明电极层，以及硅基薄膜的第二透明电极层，依次形成在导电性单晶硅基板的另一面上。第一透明电极层和第二透明电极层各自由透明导电性金属氧化物形成，第一透明电极层优选具有至少两层，总厚度为50〜120nm，其中基板侧导电性的载流子密度层比表面侧导电层高，表面侧导电层的载流子密度为1〜4×1020cm-3。

9. 发明申请

US20100310863A1 TRANSPARENT ELECTROCONDUCTIVE FILM AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：透明电极膜及其制造方法
公开(公告)号：US20100310863A1
公开(公告)日：2010-12-09
申请号：US12734667
申请日：2008-11-27
申请人： Takashi Kuchiyama , Kenji Yamamoto , Mitsuru Ichikawa , Kozo Kondo
发明人： Takashi Kuchiyama , Kenji Yamamoto , Mitsuru Ichikawa , Kozo Kondo
IPC分类号： H01B5/14 , C23C14/35 , C23C16/44 , B32B9/00
CPC分类号： C23C14/086 , C23C16/26 , H01L31/1884 , Y02E10/50 , Y10T428/265 , Y10T428/30
摘要： A transparent electroconductive film includes a transparent substrate, at least one transparent electroconductive oxide layer deposited on the transparent substrate, and a plurality of hydrogen-containing carbon layers deposited on the transparent electroconductive oxide layer. At least one of the transparent electroconductive oxide layers contains zinc oxide. The hydrogen-containing carbon layers may be more than one, in which at least one of the hydrogen-containing carbon layers has a refractive index of 1.25 to 1.85. More preferably, the transparent electroconductive film satisfies a relationship of T1/T0≧1.02 for light having a wavelength of 550 nm where T0 represents a light transmittance of the transparent substrate on which the at least one transparent electroconductive oxide layer is deposited and T1 represents a light transmittance of the transparent substrate on which the at least one transparent electroconductive oxide layer and the plurality of hydrogen-containing carbon layers are deposited.
摘要翻译：透明导电膜包括透明基板，沉积在透明基板上的至少一个透明导电氧化物层和沉积在透明导电氧化物层上的多个含氢碳层。至少一个透明导电氧化物层含有氧化锌。含氢碳层可以多于一个，其中至少一个含氢碳层的折射率为1.25至1.85。更优选地，对于波长为550nm的光，透明导电膜对于其中沉积有至少一个透明导电氧化物层的透明基板的透光率为T0，对于波长为550nm的光满足T1 /T0≥1.02的关系，T1表示其上沉积有至少一个透明导电氧化物层和多个含氢碳层的透明基板的透光率。

10. 发明申请

US20100089615A1 TRANSPARENT ELECTROCONDUCTIVE FILM AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：透明电极膜及其制造方法
公开(公告)号：US20100089615A1
公开(公告)日：2010-04-15
申请号：US12449303
申请日：2008-02-15
申请人： Takashi Kuchiyama , Kenji Yamamoto
发明人： Takashi Kuchiyama , Kenji Yamamoto
IPC分类号： H01B5/14 , C23C16/513 , C23C16/44
CPC分类号： C23C14/086 , C03C17/3441 , C03C2217/944 , C03C2218/365
摘要： In a transparent electroconductive film including a transparent substrate and a transparent electroconductive oxide layer disposed on the transparent substrate, when the transparent electroconductive oxide layer is composed of zinc oxide, the surface resistivity of the transparent electroconductive oxide layer increases with time and thus it has been difficult to obtain a transparent electroconductive film stable against an environmental variation. Consequently, hard carbon films are provided on the surfaces of a transparent electroconductive oxide layer including at least one layer and containing zinc oxide as a main component in “the order of transparent substrate-hard carbon film-transparent electroconductive oxide layer-hard carbon film” or “the order of hard carbon film-transparent substrate-transparent electroconductive oxide layer-hard carbon film”. Alternatively, an organosilicon compound covering layer is provided on a surface of the transparent electroconductive oxide layer. Thereby, the water contact angle can be 75 degrees or more, and an increase in the resistivity of the transparent electroconductive oxide layer can be suppressed.
摘要翻译：在透明导电膜包括透明基板和透明导电氧化物层的透明导电膜上，当透明导电氧化物层由氧化锌组成时，透明导电氧化物层的表面电阻率随着时间的推移而增加，难以获得对环境变化稳定的透明导电膜。因此，在“透明基板 - 硬质碳膜透明导电氧化物层 - 硬质碳膜”的顺序，在包含至少一层并含有氧化锌作为主要成分的透明导电氧化物层的表面上设置硬质碳膜，或“硬碳膜透明基板透明导电氧化物层 - 硬质碳膜的顺序”。或者，在透明导电氧化物层的表面上设置有机硅化合物覆盖层。因此，水接触角可以为75度以上，并且可以抑制透明导电氧化物层的电阻率的增加。

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