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1. 发明授权

US09252356B2 Magnetization reversal device, memory element, and magnetic field generation device 有权
标题翻译：磁化反转装置，存储元件和磁场产生装置
公开(公告)号：US09252356B2
公开(公告)日：2016-02-02
申请号：US13382801
申请日：2010-07-09
申请人： Takashi Kimura , Kohei Hamaya
发明人： Takashi Kimura , Kohei Hamaya
IPC分类号： G11C11/00 , H01L43/08 , G11C11/16 , H01L27/22
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1675 , H01L27/22
摘要： A magnetization reversal device includes a ferromagnetic 12 body which is provided in an interconnection of a non-ferromagnetic dot 11 so that a part or a whole of the ferromagnetic dot is three-dimensionally buried in the interconnection of said non-ferromagnetic dot, and a spin injection source 13 which generates a spin-polarized pure spin current without a flow of charges, and which is provided in the interconnection of the non-ferromagnetic dot 11 to be in contact therewith so that the interconnection of the non-ferromagnetic dot serves as a common electrode, and the pure spin current flows into the ferromagnetic dot 2 through the interconnection of the non-magnetic body by the spin injection source 13 due to a diffusion current, to thereby reverse magnetization of the ferromagnetic dot 12. By injecting the pure spin current, using this planar structure, it is possible to easily carry out the magnetization reversal of the ferromagnetic dot 12 even if it is a thick film ferromagnetic dot without being subjected to limitation of a spin diffusion length.
摘要翻译：磁化反转装置包括铁磁体12，其设置在非铁磁点11的互连中，使得铁磁点的一部分或全部三维地埋在所述非铁磁点的互连中，并且自旋注入源13，其产生自旋极化的纯自旋电流而不流动电荷，并且设置在非铁磁点11的互连中以与其接触，使得非铁磁性点的互连用作公共电极，并且纯自旋电流由于扩散电流而通过自旋注入源13通过非磁性体的互连而流入铁磁点2，从而反转铁磁点12的磁化。通过注入纯的自旋电流使用这种平面结构，即使是厚膜铁磁体也可以容易地进行铁磁性点12的磁化反转 c点，而不受自旋扩散长度的限制。

2. 发明申请

US20120133007A1 MAGNETIZATION REVERSAL DEVICE, MEMORY ELEMENT, AND MAGNETIC FIELD GENERATION DEVICE 有权
标题翻译：磁化反转装置，记忆元件和磁场产生装置
公开(公告)号：US20120133007A1
公开(公告)日：2012-05-31
申请号：US13382801
申请日：2010-07-09
申请人： Takashi Kimura , Kohei Hamaya
发明人： Takashi Kimura , Kohei Hamaya
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1675 , H01L27/22
摘要： A magnetization reversal device includes a ferromagnetic 12 body which is provided in an interconnection of a non-ferromagnetic dot 11 so that a part or a whole of the ferromagnetic dot is three-dimensionally buried in the interconnection of said non-ferromagnetic dot, and a spin injection source 13 which generates a spin-polarized pure spin current without a flow of charges, and which is provided in the interconnection of the non-ferromagnetic dot 11 to be in contact therewith so that the interconnection of the non-ferromagnetic dot serves as a common electrode, and the pure spin current flows into the ferromagnetic dot 2 through the interconnection of the non-magnetic body by the spin injection source 13 due to a diffusion current, to thereby reverse magnetization of the ferromagnetic dot 12. By injecting the pure spin current, using this planar structure, it is possible to easily carry out the magnetization reversal of the ferromagnetic dot 12 even if it is a thick film ferromagnetic dot without being subjected to limitation of a spin diffusion length.
摘要翻译：磁化反转装置包括铁磁体12，其设置在非铁磁点11的互连中，使得铁磁点的一部分或全部三维地埋在所述非铁磁点的互连中，并且自旋注入源13，其产生自旋极化的纯自旋电流而不流动电荷，并且设置在非铁磁点11的互连中以与其接触，使得非铁磁性点的互连用作公共电极，并且纯自旋电流由于扩散电流而通过自旋注入源13通过非磁性体的互连而流入铁磁点2，从而反转铁磁点12的磁化。通过注入纯金属自旋电流使用这种平面结构，即使是厚膜铁磁体也可以容易地进行铁磁性点12的磁化反转 c点，而不受自旋扩散长度的限制。

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