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1. 发明授权

US07223802B2 High order silane composition, and method of forming silicon film using the composition 有权
标题翻译：高级硅烷组合物，以及使用该组合物形成硅膜的方法
公开(公告)号：US07223802B2
公开(公告)日：2007-05-29
申请号：US10420521
申请日：2003-04-22
申请人： Takashi Aoki , Masahiro Furusawa , Yasuo Matsuki , Haruo Iwasawa , Yasumasa Kateuchi
发明人： Takashi Aoki , Masahiro Furusawa , Yasuo Matsuki , Haruo Iwasawa , Yasumasa Kateuchi
IPC分类号： C08F2/46 , H01L21/20
CPC分类号： C08G77/60 , C01B33/04 , C09D183/16 , H01L21/02422 , H01L21/02532 , H01L21/02628
摘要： It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safety, and hence in particular enables a high-quality silicon film to be formed easily, and also a method of forming an excellent silicon film using the composition. The present invention attains this object by providing a high order silane composition containing a polysilane obtained through photopolymerization by irradiating a solution of a photopolymerizable silane or a photopolymerizable like-liquid silane with ultraviolet light. Moreover, the present invention provides a method of forming a silicon film comprising the step of applying such a high order silane composition onto a substrate.
摘要翻译：本发明的目的是提供一种高分子量硅烷组合物，其含有比常规高的分子量的聚硅烷，这是从涂布在基材上的润湿性，沸点和安全性的观点出发的，因此特别地使能容易形成的高质量硅膜，以及使用该组合物形成优异的硅膜的方法。本发明通过提供通过光可聚合硅烷或可光聚合的类似液体硅烷的溶液用紫外光照射而通过光聚合获得的含有聚硅烷的高级硅烷组合物达到该目的。此外，本发明提供一种形成硅膜的方法，其包括将这种高级硅烷组合物施加到基底上的步骤。

2. 发明申请

US20070190265A1 High order silane composition, and method of forming silicon film using the composition 审中-公开
公开(公告)号：US20070190265A1
公开(公告)日：2007-08-16
申请号：US11787445
申请日：2007-04-16
申请人： Takashi Aoki , Masahiro Furusawa , Yasuo Matsuki , Haruo Iwasawa , Yasumasa Takeuchi
发明人： Takashi Aoki , Masahiro Furusawa , Yasuo Matsuki , Haruo Iwasawa , Yasumasa Takeuchi
IPC分类号： C08J3/28
CPC分类号： C08G77/60 , C01B33/04 , C09D183/16 , H01L21/02422 , H01L21/02532 , H01L21/02628
摘要： It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safety, and hence in particular enables a high-quality silicon film to be formed easily, and also a method of forming an excellent silicon film using the composition. The present invention attains this object by providing a high order silane composition containing a polysilane obtained through photopolymerization by irradiating a solution of a photopolymerizable silane or a photopolymerizable like-liquid silane with ultraviolet light. Moreover, the present invention provides a method of forming a silicon film comprising the step of applying such a high order silane composition onto a substrate.

3. 发明授权

US07084428B2 Transistor, integrated circuit, electro-optic device, electronic instrument and method of manufacturing a transistor 失效
标题翻译：晶体管，集成电路，电光器件，电子仪器和制造晶体管的方法
公开(公告)号：US07084428B2
公开(公告)日：2006-08-01
申请号：US10717503
申请日：2003-11-21
申请人： Ichio Yudasaka , Masahiro Furusawa , Takashi Aoki
发明人： Ichio Yudasaka , Masahiro Furusawa , Takashi Aoki
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1292 , H01L29/66757 , H01L29/66772 , H01L29/78603 , H01L29/78618 , H01L29/78636
摘要： There is provided a transistor and a method of manufacturing this transistor that allow a high degree of freedom when designing a wiring structure and also allow an improvement in product quality to be achieved. The transistor includes a source area, a drain area, and a channel area, each of which are formed by semiconductor films, and also a gate insulating film and a gate electrode. The semiconductor film containing the source area and the semiconductor film containing the drain area are formed separately sandwiching both sides of an insulating member. The semiconductor film containing the channel area is formed on top of the insulating member.
摘要翻译：提供晶体管和制造该晶体管的方法，其在设计布线结构时允许高自由度，并且还可以实现提高产品质量。晶体管包括源极区域，漏极区域和沟道区域，每个沟道区域由半导体膜形成，以及栅极绝缘膜和栅电极。包含源极区域的半导体膜和包含漏极区域的半导体膜形成为分开地夹着绝缘构件的两侧。包含沟道区的半导体膜形成在绝缘构件的顶部。

4. 发明授权

US06884700B2 Method of manufacturing device, device, and electronic apparatus 失效
标题翻译：制造装置，装置和电子装置的方法
公开(公告)号：US06884700B2
公开(公告)日：2005-04-26
申请号：US10420525
申请日：2003-04-22
申请人： Takashi Aoki , Masahiro Furusawa , Ichio Yudasaka
发明人： Takashi Aoki , Masahiro Furusawa , Ichio Yudasaka
IPC分类号： H01L21/288 , H01L21/20 , H01L21/208 , H01L21/3205 , H01L21/336 , H01L29/786 , H01L21/36
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02628 , H01L21/02636 , H01L21/32055 , H01L27/1292 , H01L29/78618
摘要： A method of manufacturing a device comprising individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, comprising: a step of applying a liquid material to form an applied film; and a heat treatment and/or a light irradiating treatment of making the applied film into the silicon film, wherein, as the liquid material, a high-order silane composition comprising a high-order silence formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.
摘要翻译：一种制造包括单独薄膜的器件的方法，包括硅膜，栅极绝缘膜，用于栅电极的导电膜，层间绝缘膜和用于电极和布线的导电膜，包括：液体材料形成涂膜; 以及将涂布膜制成硅膜的热处理和/或光照射处理，其中，作为液体材料，通过照射具有光聚合反应形成的高阶沉积的硅烷化合物溶液作为液体材料，使用紫外线的光聚合性。

5. 发明授权

US06864133B2 Device, method of manufacturing device, electro-optic device, and electronic equipment 失效
标题翻译：装置，制造装置的方法，电光装置和电子设备
公开(公告)号：US06864133B2
公开(公告)日：2005-03-08
申请号：US10420359
申请日：2003-04-22
申请人： Takashi Aoki , Masahiro Furusawa , Ichio Yudasaka
发明人： Takashi Aoki , Masahiro Furusawa , Ichio Yudasaka
IPC分类号： G02F1/1368 , H01L21/225 , H01L21/336 , H01L29/786
CPC分类号： H01L29/66757 , H01L29/78618
摘要： A device comprising a semiconductor film (12) formed on a substrate (11), a gate region (15), in which a gate insulating film (13) formed on the semiconductor film and a gate electrode film (14) are laminated, isolation means (A) formed on both sides of the gate region to prevent contact between the gate electrode film and other regions, and a source region and a drain region formed by baking a liquid semiconductor material (17) and disposed on regions on the substrate and on both sides of the gate region.
摘要翻译：包括形成在基板（11）上的半导体膜（12），形成在半导体膜上的栅极绝缘膜（13）和栅极电极膜（14）的栅极区域（15）的器件被层压，隔离形成在栅极区域两侧的装置（A），以防止栅极电极膜与其它区域之间的接触，以及通过烘焙液体半导体材料（17）而形成并设置在基板上的区域上形成的源极区域和漏极区域，以及在闸门区域的两侧。

6. 发明申请

US20050029591A1 Transistor, integrated circuit, electro-optic device, electronic instrument and method of manufacturing a transistor 失效
标题翻译：晶体管，集成电路，电光器件，电子仪器和制造晶体管的方法
公开(公告)号：US20050029591A1
公开(公告)日：2005-02-10
申请号：US10717503
申请日：2003-11-21
申请人： Ichio Yudasaka , Masahiro Furusawa , Takashi Aoki
发明人： Ichio Yudasaka , Masahiro Furusawa , Takashi Aoki
IPC分类号： G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/04
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1292 , H01L29/66757 , H01L29/66772 , H01L29/78603 , H01L29/78618 , H01L29/78636
摘要： There is provided a transistor and a method of manufacturing this transistor that allow a high degree of freedom when designing a wiring structure and also allow an improvement in product quality to be achieved. The transistor includes a source area, a drain area, and a channel area, each of which are formed by semiconductor films, and also a gate insulating film and a gate electrode. The semiconductor film containing the source area and the semiconductor film containing the drain area are formed separately sandwiching both sides of an insulating member. The semiconductor film containing the channel area is formed on top of the insulating member.
摘要翻译：提供晶体管和制造该晶体管的方法，其在设计布线结构时允许高自由度，并且还可以实现提高产品质量。晶体管包括源极区域，漏极区域和沟道区域，每个沟道区域由半导体膜形成，以及栅极绝缘膜和栅电极。包含源极区域的半导体膜和包含漏极区域的半导体膜形成为分开地夹着绝缘构件的两侧。包含沟道区的半导体膜形成在绝缘构件的顶部。

7. 发明授权

US09114646B2 Printing device and recording paper conveyance mechanism 有权
标题翻译：印刷装置和记录纸输送机构
公开(公告)号：US09114646B2
公开(公告)日：2015-08-25
申请号：US13537428
申请日：2012-06-29
申请人： Hiroyuki Ishimori , Takashi Aoki
发明人： Hiroyuki Ishimori , Takashi Aoki
IPC分类号： B41J2/01 , B41J11/06 , B41J11/00
CPC分类号： B41J11/06 , B41J11/0085
摘要： A printing device has a liquid droplet ejection head that ejects liquid droplets; a conveyance unit that conveys recording paper; a platen that is disposed opposite the liquid droplet ejection head and has a plurality of suction holes arrayed in the conveyance direction in which the conveyance unit conveys the recording paper and a lateral direction perpendicular to the conveyance direction; a suction mechanism unit that suctions the recording paper through the suction holes in the platen; and an opening/closing mechanism that opens or closes at least part of the plural suction holes.
摘要翻译：打印装置具有喷射液滴的液滴喷射头; 传送记录纸的传送单元; 台板，其布置成与所述液滴喷射头相对，并且具有沿所述传送单元输送所述记录纸的传送方向和垂直于所述传送方向的横向方向排列的多个吸孔; 抽吸机构单元，其通过所述压板中的吸入孔吸收记录纸; 以及打开或关闭多个吸入孔的至少一部分的开闭机构。

8. 发明授权

US08854528B2 Imaging apparatus 有权
标题翻译：成像设备
公开(公告)号：US08854528B2
公开(公告)日：2014-10-07
申请号：US13039815
申请日：2011-03-03
申请人： Takashi Aoki
发明人： Takashi Aoki
IPC分类号： G03B13/00 , H04N13/02 , H04N5/232
CPC分类号： H04N13/204 , G02B3/00 , H04N5/23212 , H04N13/211 , H04N13/218 , H04N13/239
摘要： A stereoscopic imaging apparatus which uses contrast AF to obviate disadvantages of phase-difference AF, shorten processing time of contrast AF, and improve focusing accuracy. A phase-difference CCD in which object images having passed through different regions in a predetermined direction of a single photographing optical system are pupil-split and imaged subjects the object images having passed through the respective regions to photoelectric conversion to obtain a main pixel image and a sub-pixel image which have a mutual phase difference. Contrast AF is performed using only one of the main pixel image and the sub-pixel image. Which one of the main pixel image and the sub-pixel image will be used for the contrast AF is determined depending on whether the position of an AF area in the angle of view belongs to a main pixel AF area or a sub-pixel AF area.
摘要翻译：使用对比度AF的立体成像装置消除相位差AF的缺点，缩短对比度AF的处理时间，并提高聚焦精度。相位差CCD，其中通过单次拍摄光学系统的预定方向的不同区域的对象图像被瞳孔分割和成像，使经过各个区域的对象图像经受光电转换以获得主像素图像，具有相互相位差的子像素图像。仅使用主像素图像和子像素图像中的一个来执行对比度AF。主要像素图像和子像素图像中的哪一个将用于对比度AF是根据视角中的AF区域的位置是否属于主像素AF区域还是子像素AF区域来确定。

9. 发明授权

US08608276B2 Liquid discharge head and ink jet recording apparatus including liquid discharge head 有权
标题翻译：液体排出头和喷墨记录装置，包括排液头
公开(公告)号：US08608276B2
公开(公告)日：2013-12-17
申请号：US13096385
申请日：2011-04-28
申请人： Ryoji Oohashi , Yoshiyuki Imanaka , Kazunori Masuda , Daishiro Sekijima , Takashi Aoki
发明人： Ryoji Oohashi , Yoshiyuki Imanaka , Kazunori Masuda , Daishiro Sekijima , Takashi Aoki
IPC分类号： B41J29/393
CPC分类号： B41J2/14072 , B41J2/04563 , B41J2/0458
摘要： A liquid discharge head includes a heat generating element which generates heat energy used to discharge a liquid; a temperature detecting element which changes in output voltage in response to a change in the temperature of the heat generating element; an electrical power source line and a grounding line electrically connected to each other through the heat generating element to apply a current to the heat generating element; and a pair of lines for temperature detection electrically connected to each other through the temperature detecting element to apply a current to the temperature detecting element. Here, each of the pair of lines for temperature detection is arranged adjacent to the other.
摘要翻译：液体排出头包括产生用于排出液体的热能的发热元件; 温度检测元件，其响应于所述发热元件的温度的变化而改变输出电压; 电源线和通过所述发热元件彼此电连接的接地线，以向所述发热元件施加电流; 以及一对用于温度检测的管线，通过温度检测元件彼此电连接以将电流施加到温度检测元件。这里，用于温度检测的一对线路中的每一对彼此相邻布置。

10. 发明申请

US20120200983A1 Multilayer Capacitor 有权
标题翻译：多层电容器
公开(公告)号：US20120200983A1
公开(公告)日：2012-08-09
申请号：US13447668
申请日：2012-04-16
申请人： Masaaki TOGASHI , Takashi Aoki
发明人： Masaaki TOGASHI , Takashi Aoki
IPC分类号： H01G4/30
CPC分类号： H01G4/005 , H01G4/232 , H01G4/30
摘要： A first inner electrode is integrally provided with a first terminal connection part connected to a first terminal electrode and a first linking connection part connected to a first linking electrode. A second inner electrode is integrally provided with a second terminal connection part connected to a second terminal electrode and a second linking connection part connected to a second linking electrode. A third inner electrode is integrally provided with a third linking connection part connected to the first linking electrode. A fourth inner electrode is integrally provided with a fourth linking connection part connected to the second linking electrode. The third inner electrode is adjacent to the first and fourth inner electrodes in a laminating direction of the plurality of dielectric layers. The first and fourth inner electrodes overlap the third inner electrode as seen in the laminating direction of the plurality of dielectric layers.
摘要翻译：第一内部电极一体地设置有连接到第一端子电极的第一端子连接部和连接到第一连接电极的第一连接部。第二内部电极一体地设置有连接到第二端子电极的第二端子连接部分和连接到第二连接电极的第二连接部分。第三内部电极一体地设置有连接到第一连接电极的第三连接连接部。第四内电极一体地设置有连接到第二连接电极的第四连接连接部。第三内部电极在多个电介质层的层叠方向上与第一和第四内部电极相邻。第一和第四内部电极与第三内部电极重叠，如在多个电介质层的层叠方向上看到的那样。

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