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    • 2. 发明申请
    • ELECTRIC POWER STORAGE SYSTEM
    • 电力存储系统
    • US20120276424A1
    • 2012-11-01
    • US13429860
    • 2012-03-26
    • Takao INOUEChikaaki OKUDANaoki BABA
    • Takao INOUEChikaaki OKUDANaoki BABA
    • H01M10/50
    • H01M10/443H01M10/052H01M10/486H01M10/63H01M10/635
    • An electric power storage system 10 of the present invention includes a lithium secondary battery; a detection device to detect the temperature of the lithium secondary battery; and a control device to decrease a remaining capacity of the lithium secondary battery based on an increase of the detected temperature and a temperature Tbx of the lithium secondary battery. When a self-heating rate of the lithium secondary battery at a temperature T (K) and a remaining capacity x (%) is represented by Hs(x, T) (K/min), and a heat dissipation rate at a temperature T (K) of the lithium secondary battery is represented by Hd(T) (K/min), the temperature Tbx is a temperature at which Hs(x,Tbx)>Hd(Tbx) holds. That is, this temperature Tbx is a temperature at which the heat generating rate is higher than the heat dissipation rate and at which the battery temperature T starts to increase.
    • 本发明的蓄电系统10包括锂二次电池; 用于检测锂二次电池的温度的检测装置; 以及控制装置,其基于检测温度的升高和锂二次电池的温度Tbx来降低锂二次电池的剩余容量。 当温度T(K)和剩余容量x(%)的锂二次电池的自加热速率由Hs(x,T)(K / min)表示时,并且在温度T 锂二次电池的(K)由Hd(T)(K / min)表示,温度Tbx是Hs(x,Tbx)> Hd(Tbx)成立的温度。 也就是说,该温度Tbx是发热率高于散热率并且电池温度T开始增加的温度。
    • 4. 发明申请
    • THIN FILM TRANSISTOR ARRAY AND DISPLAYING APPARATUS
    • 薄膜晶体管阵列和显示装置
    • US20090095958A1
    • 2009-04-16
    • US12246134
    • 2008-10-06
    • Takao INOUETakumi YAMAGAAtsushi ONODERA
    • Takao INOUETakumi YAMAGAAtsushi ONODERA
    • H01L33/00H01L27/12
    • H01L29/41733H01L27/124H01L29/42384
    • A thin film transistor array is disclosed. The thin film transistor array includes plural gate electrodes formed on an insulation substrate, plural source electrodes formed above or under the gate electrodes via a gate insulation film so that the source electrodes cross the gate electrodes in a planar view, plural drain electrodes formed at corresponding positions surrounded by the gate electrodes and the source electrodes in a planar view in the same layer as that of the source electrodes, semiconductor layers formed via the gate insulation film to face the gate electrodes for forming corresponding channel regions between the source electrodes and the drain electrodes. The plural gate electrodes are linearly formed, and the channel regions are disposed to face the gate electrodes.
    • 公开了一种薄膜晶体管阵列。 薄膜晶体管阵列包括形成在绝缘基板上的多个栅电极,通过栅极绝缘膜形成在栅极电极上方或下方的多个源电极,使得源电极在平面图中与栅电极交叉,形成在相应的 位于与源极电极相同的平面图中由栅极电极和源极电极围绕的位置,经由栅极绝缘膜形成的面向栅电极的半导体层,用于在源电极和漏极之间形成相应的沟道区域 电极。 多个栅电极被线性地形成,并且沟道区被设置为面对栅电极。
    • 6. 发明申请
    • CONNECTOR
    • 连接器
    • US20110009002A1
    • 2011-01-13
    • US12830569
    • 2010-07-06
    • Shoichi HISADATakashi KAWASAKITakao INOUE
    • Shoichi HISADATakashi KAWASAKITakao INOUE
    • H01R13/648
    • H01R27/00H01R12/716H01R12/724H01R13/6583H01R24/62H01R2107/00
    • Disclosed is a connector, comprising: a shell provided as a cylindrical shape having an opened front side; a first insulator arranged in the shell; a second insulator arranged in the shell to be parallel to the first insulator; a first contact provided to be arranged in the first insulator; a second contact provided to be arranged in the second insulator; and a partition section arranged in the shell in a state of projecting from an outside of the shell to an inside of the shell so as to partition a hollow in the shell to a first region in which the first insulator exists and a second region in which the second insulator exists as viewed from the front side of the shell, the partition section being provided to be movable to the outside of the shell.
    • 公开了一种连接器,包括:壳体,其设置为具有敞开的前侧的圆柱形; 布置在壳体中的第一绝缘体; 布置在壳体中以平行于第一绝缘体的第二绝缘体; 设置在第一绝缘体中的第一触点; 设置在第二绝缘体中的第二触点; 以及分隔部,其以从所述壳体的外部突出到所述壳体的内部的状态布置在所述壳体中,以将所述壳体中的中空部分分隔成第一绝缘体存在的第一区域和第二区域,其中, 从壳体的前侧观察第二绝缘体,分隔部设置成能够移动到壳体的外部。
    • 9. 发明申请
    • LIGHTING DEVICE AND LIGHTING SYSTEM
    • 照明设备和照明系统
    • US20050179629A1
    • 2005-08-18
    • US10906312
    • 2005-02-14
    • Takao INOUE
    • Takao INOUE
    • H05B37/02B60Q1/00G02F1/136H01L33/00H05B33/08H05B43/00
    • H05B33/0812H05B33/0827Y02B20/343
    • An incremental current of forward current through LEDs (LED1 and LED2) due to power supply voltage rise is shunted by a PNP transistor (Q1), and the forward current value becomes predetermined current value corresponding to rated voltage. Without necessitating constant-current circuit, the LEDs (LED1 and LED2) emit light in desired luminance without being damaged. In a state of forward current value fluctuating due to dispersion of the rated voltage of the LEDs (LED1 and LED2), the current value shunted by the PNP transistor (Q1) varies corresponding to magnitude of voltage drop at a first resistor (R1), and the voltage drop at a third resistor (R3) varies. Based on variation of the voltage drop, potential difference between an emitter of a PNP transistor (Q2) and a base of the PNP transistor (Q1) varies and potential difference between both ends of the LED (LED1 and LED2) varies. Thereby, fluctuation of the forward current value is restrained. Luminance difference among devices can be restrained.
    • 由于电源电压上升,通过LED(LED 1和LED 2)的正向电流的增量电流被PNP晶体管(Q1)分流,并且正向电流值成为对应于额定电压的预定电流值。 不需要恒流电路,LED(LED 1和LED 2)以所需亮度发光,而不会损坏。 在由于LED(LED 1和LED 2)的额定电压的偏差引起的正向电流值波动的状态下,由PNP晶体管(Q1)分流的电流值随着第一电阻器 R 1),并且第三电阻器(R 3)处的电压降变化。 基于电压降的变化,PNP晶体管(Q 2)的发射极与PNP晶体管(Q 1)的基极之间的电位差发生变化,LED(LED 1和LED 2)的两端之间的电位差发生变化 。 由此,能够抑制正向电流值的波动。 可以抑制器件之间的亮度差。