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1. 发明授权

US4816126A Method for forming a planarized thin film 失效
标题翻译：形成平坦化薄膜的方法
公开(公告)号：US4816126A
公开(公告)日：1989-03-28
申请号：US75208
申请日：1987-07-20
申请人： Kazuyoshi Kamoshida , Hiroaki Nakamura , Takao Amazawa
发明人： Kazuyoshi Kamoshida , Hiroaki Nakamura , Takao Amazawa
IPC分类号： H01L21/363 , H01L21/263 , H01L21/321 , H01L21/768 , C23C14/34
CPC分类号： H01L21/2636 , H01L21/32115 , H01L21/7684
摘要： Charged particles are irradiated over a thin film formed on a convex and concave surface of a substrate or over a thin film being formed on a convex and concave surface of a substrate. During the irradiation, raise in temperature of the thin film and impingement of charged particles cause the fluidization of the thin film, so that a planarized thin film is formed within a short period of time.
摘要翻译：带电粒子照射在形成在基板的凹凸表面上的薄膜上，或者在形成在基板的凹凸表面上的薄膜上。在照射期间，薄膜的升温和带电粒子的撞击引起薄膜的流化，从而在短时间内形成平坦化的薄膜。

2. 发明授权

US4956204A Process of forming a film by low pressure chemical vapor deposition 失效
标题翻译：通过低压化学气相沉积法形成薄膜的工艺
公开(公告)号：US4956204A
公开(公告)日：1990-09-11
申请号：US324983
申请日：1989-03-15
申请人： Takao Amazawa , Hiroaki Nakamura
发明人： Takao Amazawa , Hiroaki Nakamura
IPC分类号： C23C16/18 , C23C16/22 , C23C16/455 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/49
CPC分类号： C23C16/18 , C23C16/22 , C23C16/455 , H01L29/41708 , H01L29/42304 , H01L29/456 , H01L29/4925
摘要： A chemical vapor deposition method is characterized in that a heating block and a surface to be deposited of a substrate are arranged to face to each other at a given distance in a closed space, a source gas is guided into the closed space and supplied between the heating block and the substrate, thereby depositing a thin film on the surface to be deposited of the substrate. A chemical vapor deposition apparatus includes a heating block arranged in a closed space, a substrate holder for holding a substrate so that a surface to be deposited of the substrate is arranged to face to the heating block at a given distance, and a device for guiding a source gas to the closed space. In this CVD apparatus, the source gas guided by the device is guided to the closed space and supplied between the heating block and the substrate, thereby depositing a thin film on the surface to be deposited of the substrate.
摘要翻译：化学气相沉积方法的特征在于，将加热块和待沉积的基板的表面布置为在封闭空间中以给定距离彼此面对，将源气体引导到封闭空间中并且供应在加热块和衬底，从而在待沉积的衬底表面上沉积薄膜。一种化学气相沉积装置，包括设置在封闭空间中的加热块，用于保持基板的基板保持器，使得要沉积的基板的表面布置成以给定距离面向加热块;以及引导装置源气体到封闭空间。在该CVD装置中，由装置引导的源气体被引导到封闭空间并供应到加热块和基板之间，从而在待沉积的基板表面上沉积薄膜。

3. 发明授权

US5104694A Selective chemical vapor deposition of a metallic film on the silicon surface 失效
标题翻译：金属表面的金属膜的选择性化学气相沉积
公开(公告)号：US5104694A
公开(公告)日：1992-04-14
申请号：US509873
申请日：1990-04-16
申请人： Kunio Saito , Yoshinobu Arita , Takao Amazawa
发明人： Kunio Saito , Yoshinobu Arita , Takao Amazawa
IPC分类号： C23C16/02 , C23C16/04 , C23C16/42 , C23C16/52 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/768
CPC分类号： H01L21/28562 , C23C16/0236 , C23C16/04 , H01L21/76879
摘要： A selected chemical vapor deposition method includes the steps of arranging a substrate having a silicon surface and an insulator surface in a reaction chamber, supplying a gas consisting of a silicon hydride in said reaction chamber to reduce and remove a native oxide film on said silicon surface by said gas, and supplying a source gas in said reaction chamber to selectively form a film on only said silicon surface.
摘要翻译：选择的化学气相沉积方法包括以下步骤：在反应室中布置具有硅表面和绝缘体表面的衬底，在所述反应室中供应由氢化硅组成的气体，以减少和去除所述硅表面上的自然氧化膜并且在所述反应室中供应源气体以选择性地仅在所述硅表面上形成膜。

4. 发明授权

US4619695A Process for producing high-purity metal targets for LSI electrodes 失效
标题翻译：用于生产LSI电极的高纯金属靶的工艺
公开(公告)号：US4619695A
公开(公告)日：1986-10-28
申请号：US634895
申请日：1984-07-26
申请人： Hideo Oikawa , Takao Amazawa , Nakahachiro Honma , Hideo Miyazaki , Iwao Kyono , Nobuyuki Mori , Yoshiharu Katoh , Masami Kuroki
发明人： Hideo Oikawa , Takao Amazawa , Nakahachiro Honma , Hideo Miyazaki , Iwao Kyono , Nobuyuki Mori , Yoshiharu Katoh , Masami Kuroki
IPC分类号： H01L29/78 , C22B34/34 , H01L21/28 , H01L21/285 , H01L29/49 , C22B4/00
CPC分类号： C22B34/34 , H01L21/28079 , H01L21/28097 , H01L21/285 , H01L29/495 , H01L29/4975 , Y10T428/12528 , Y10T428/12674 , Y10T428/12833
摘要： A high-purity high-melting metal target or high-purity high-melting metal silicide target for LSI electrodes having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb is provided by a wet purification process followed by a series of dry processings. Preferably the high-melting metal is molybdenum, tungsten, titanium, niobium or tantalum. More preferably, the high-melting metal is molybdenum.
摘要翻译：通过湿式纯化提供碱金属含量不大于100ppb，放射性元素含量不大于10ppb的LSI电极的高纯度高熔点金属靶或高纯度高熔点金属硅化物靶过程之后是一系列干法处理。优选地，高熔点金属是钼，钨，钛，铌或钽。更优选地，高熔点金属是钼。

5. 发明授权

US4770948A High-purity metal and metal silicide target for LSI electrodes 失效
标题翻译：用于LSI电极的高纯度金属和金属硅化物靶
公开(公告)号：US4770948A
公开(公告)日：1988-09-13
申请号：US877559
申请日：1986-06-23
申请人： Hideo Oikawa , Takao Amazawa , Nakahachiro Honna , Hideo Miyazaki , Iwao Kyono , Nobuyuki Mori , Yoshiharu Katoh , Masami Kuroki
发明人： Hideo Oikawa , Takao Amazawa , Nakahachiro Honna , Hideo Miyazaki , Iwao Kyono , Nobuyuki Mori , Yoshiharu Katoh , Masami Kuroki
IPC分类号： H01L29/78 , C22B34/34 , H01L21/28 , H01L21/285 , H01L29/49 , H01L29/46
CPC分类号： C22B34/34 , H01L21/28079 , H01L21/28097 , H01L21/285 , H01L29/495 , H01L29/4975 , Y10T428/12528 , Y10T428/12674 , Y10T428/12833
摘要： There is provided a high-purity molybdenum target or high-purity molybdenum silicide target for LSI electrodes which comprises a high-purity metallic molybdenum having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb. Further, a process is provided for producing such target comprising a wet purification processing followed by a series of dry processings.

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