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    • 6. 发明授权
    • Total internal reflection fluorescence (TIRF) observation device
    • 全内反射荧光(TIRF)观察装置
    • US08324596B2
    • 2012-12-04
    • US13055854
    • 2009-05-20
    • Nobutaka KumazakiSatoshi TakahashiHirokazu KatoTakanobu Haga
    • Nobutaka KumazakiSatoshi TakahashiHirokazu KatoTakanobu Haga
    • G01N21/64
    • G01N21/648G02B21/16
    • A device and method for fluorescence observation have good operability, high sensitivity, and high acid reliability. The device is used for fluorescence observation using evanescent light. The angle of incidence of the excitation light is adjusted so that the excitation light is totally reflected from the surface of a substrate irrespective of the angle of the substrate surface. The method includes a step of shining the excitation light on the observation substrate while continuously varying the angle of the excitation light with respect to the observation substrate. In addition, the method includes a step of sensing the shone excitation light via optical sensors, and a step of setting the angle of total reflection according to the result of the sensing by the optical sensors. In the present device and method, the direction in which the shone excitation light travels varies with the angle of incidence.
    • 用于荧光观察的装置和方法具有良好的可操作性,高灵敏度和高酸可靠性。 该器件用于使用ev逝光的荧光观察。 调整激发光的入射角,使得激发光从衬底表面全反射,而与衬底表面的角度无关。 该方法包括在激发光相对于观察基板的角度连续变化的同时在观察基板上照射激发光的步骤。 此外,该方法包括通过光学传感器感测照射激发光的步骤,以及根据光学传感器的感测结果设定全反射角度的步骤。 在本装置和方法中,照射激发光的行进方向随入射角而变化。
    • 7. 发明申请
    • TOTAL REFLECTION FLUORESCENCE OBSERVATION DEVICE
    • 总反射荧光观察装置
    • US20110121204A1
    • 2011-05-26
    • US13055854
    • 2009-05-20
    • Nobutaka KumazakiSatoshi TakahashiHirokazu KatoTakanovu Haga
    • Nobutaka KumazakiSatoshi TakahashiHirokazu KatoTakanovu Haga
    • G01J1/58
    • G01N21/648G02B21/16
    • A technique and device for fluorescence observation with good operability, high sensitivity, acid high reliability. The device is used for fluorescence observation using evanescent light. The angle of incidence of the excitation light is adjusted so that the excitation light is always totally reflected from the surface of a substrate irrespective of the angle of the surface of the substrate. The method includes a step of shining the excitation light on the observation substrate while continuously varying the angle of the excitation light with respect to the observation substrate, a step of sensing the shone excitation light by means of optical sensors, and a step of setting the angle of total reflection according to the result of the sensing by the optical sensors. The direction in which the shone excitation light travels varies with the angle of incidence. That is, the excitation light travels as the transmitted light, the reflected light, or the surface propagating light. These lights are sensed by the corresponding optical sensors, and how the angle of incidence of the excitation light is with respect to the critical angle is determined. The angle of incidence of the excitation light is varied depending on the result of the determination, thereby realizing an optimum total reflection angle.
    • 用于荧光观察的技术和装置,操作性好,灵敏度高,酸度高可靠性。 该器件用于使用ev逝光的荧光观察。 调节激发光的入射角,使得激发光始终从基板的表面全反射,而与基板的表面的角度无关。 该方法包括在观察基板上照射激发光的步骤,同时连续地改变激发光相对于观察基板的角度,通过光学传感器感测照射激发光的步骤,以及将 根据光学传感器的感测结果,全反射角度。 照射激发光的行进方向随入射角而变化。 也就是说,激发光作为透射光,反射光或表面传播光行进。 这些光被相应的光学传感器感测,并且确定激发光的入射角相对于临界角如何。 激发光的入射角取决于确定的结果而变化,从而实现最佳的全反射角。
    • 9. 发明授权
    • Method for fabrication of interconnect structure with improved alignment for semiconductor devices
    • 用于制造具有改进的半导体器件对准的互连结构的方法
    • US08614144B2
    • 2013-12-24
    • US13157744
    • 2011-06-10
    • Hirokazu Kato
    • Hirokazu Kato
    • H01L21/31H01L21/469
    • H01L21/76811H01L21/31144H01L21/76813H01L21/76816
    • Methods and structure are provided for creating and utilizing hard masks to facilitate creation of a grating effect to control an anisotropic etching process for the creation of an opening, and subsequent formation of a interconnect structure (e.g., a via) in a multilayered semiconductor device. A first hard mask can be patterned to control etching in a first dimension, and a second hard mask can be patterned to control etching in a second dimension, wherein the second hard mask is patterned orthogonally opposed to the first hard mask. A resist can be patterned by inverting the pattern of a metal line patterning. Interconnects can be formed with critical dimension(s) and also self-aligned.
    • 提供了用于创建和利用硬掩模的方法和结构,以便于创建光栅效应以控制用于产生开口的各向异性蚀刻工艺,以及随后在多层半导体器件中形成互连结构(例如通孔)。 可以对第一硬掩模进行图案化以控制第一维度的蚀刻,并且可以对第二硬掩模进行图案化以控制第二维度中的蚀刻,其中第二硬掩模被图案与第一硬掩模垂直相对。 通过反转金属线图案的图案可以对抗蚀剂进行图案化。 互连可以形成临界尺寸,也可以自对准。
    • 10. 发明授权
    • Information processing apparatus and method for calculating the position and orientation of an image sensing device
    • 用于计算图像感测装置的位置和取向的信息处理装置和方法
    • US08391589B2
    • 2013-03-05
    • US12013123
    • 2008-01-11
    • Daisuke KotakeShinji UchiyamaHirokazu Kato
    • Daisuke KotakeShinji UchiyamaHirokazu Kato
    • G06K9/00
    • G01C11/00G01S5/16G06T7/20G06T7/73
    • Three pieces of candidate position information are calculated based on a plurality of pieces of sensing position information, and three pieces of candidate orientation information are calculated based on a plurality of pieces of sensing orientation information. Sets each of which combines one candidate position information and one candidate orientation information are prepared for all combinations. For each set, the candidate position information and candidate orientation information which configure that set are corrected. An evaluation value is calculated for each corrected set, and one of the sets is selected based on the calculated evaluation values. The candidate position information and candidate orientation information which configure the selected set are respectively recorded in a memory as sensing position information and sensing orientation information.
    • 基于多条感测位置信息计算三条候选位置信息,并且基于多条感测取向信息来计算三条候选方向信息。 对于所有组合,为每个组合一个候选位置信息和一个候选方向信息。 对于每个集合,配置该组的候选位置信息和候选方向信息被校正。 针对每个校正组计算评估值,并且基于所计算的评估值来选择一组。 配置所选择的集合的候选位置信息和候选方向信息分别作为感测位置信息和感测取向信息记录在存储器中。