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1. 发明授权

US08258537B2 Efficient light emitting semiconductor device 有权
标题翻译：高效发光半导体器件
公开(公告)号：US08258537B2
公开(公告)日：2012-09-04
申请号：US12397466
申请日：2009-03-04
申请人： Tomoki Igari , Tomohiko Sagimori , Mitsuhiko Ogihara , Takahito Suzuki , Hiroyuki Fujiwara , Hironori Furuta , Yusuke Nakai
发明人： Tomoki Igari , Tomohiko Sagimori , Mitsuhiko Ogihara , Takahito Suzuki , Hiroyuki Fujiwara , Hironori Furuta , Yusuke Nakai
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , B41J2/45
摘要： Provided is a technique of effectively extracting the beams of light excited in an LED light emitter other than the light beams emitted from a light-emitting region in the direction of a light-extraction surface. A pit with a tapered sidewall is formed in a substrate. A thin-film semiconductor element is attached to the pit. Light beams emitted from a side surface of the thin-film semiconductor element are reflected by the sidewall of the thin-film semiconductor element. Achieved thereby is effective extraction of light beams other than the light beams emitted from the light-emitting region in the direction of the light-extraction surface.
摘要翻译：提供了一种有效地提取除了从发光区域在光提取表面的方向发射的光束之外在LED发光器中激发的光束的技术。在基板上形成具有锥形侧壁的凹坑。薄膜半导体元件附着在凹坑上。从薄膜半导体元件的侧面发射的光束被薄膜半导体元件的侧壁反射。由此实现了除了从发光区域在光提取面的方向发射的光束以外的光束的有效提取。

2. 发明申请

US20080219006A1 Display apparatus 有权
标题翻译：显示装置
公开(公告)号：US20080219006A1
公开(公告)日：2008-09-11
申请号：US12071943
申请日：2008-02-28
申请人： Takahito Suzuki , Tomohiko Sagimori , Hiroyuki Fujiwara , Tomoki Igari , Yusuke Nakai , Hironori Furuta , Mitsuhiko Ogihara
发明人： Takahito Suzuki , Tomohiko Sagimori , Hiroyuki Fujiwara , Tomoki Igari , Yusuke Nakai , Hironori Furuta , Mitsuhiko Ogihara
IPC分类号： F21V29/00
CPC分类号： H01L25/0753 , H01L33/20 , H01L33/64 , H01L51/0024 , H01L2924/0002 , H01L2924/00
摘要： The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus, inner surface electrode integrated with vertical wiring between plastic substrate and thin film LED 102 is accumulated, the inner surface electrode acts as a heat release layer for releasing heat produced inside the thin film LED 102.
摘要翻译：本发明提供了使用塑料基板代替玻璃基板的显示装置，其可以解决塑料基板具有低导热性并且其放热性能变差的问题，从而难以获得稳定的性能和可靠性。在显示装置中，与塑料基板和薄膜LED102之间的垂直布线一体化的内表面电极被积聚，内表面电极用作用于释放在薄膜LED 102内产生的热量的散热层。

3. 发明申请

US20080224170A1 Semiconductor wafer, light emitting diode print head, image forming apparatus, and method of producing semiconductor device 审中-公开
标题翻译：半导体晶片，发光二极管打印头，图像形成装置以及半导体装置的制造方法
公开(公告)号：US20080224170A1
公开(公告)日：2008-09-18
申请号：US12076052
申请日：2008-03-13
申请人： Mitsuhiko Ogihara , Tomoki Igari , Hiroyuki Fujiwara , Tomohiko Sagimori , Takahito Suzuki , Hironori Furuta , Yusuke Nakai
发明人： Mitsuhiko Ogihara , Tomoki Igari , Hiroyuki Fujiwara , Tomohiko Sagimori , Takahito Suzuki , Hironori Furuta , Yusuke Nakai
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/007 , B41J2/45 , H01L21/02395 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02463 , H01L21/02488 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L33/0079
摘要： A nitride semiconductor wafer includes a substrate; a nitride compound semiconductor layer formed on the substrate; and an AlxGa1-xAs layer (x≧0.6) formed between the substrate and the nitride semiconductor layer. The nitride compound semiconductor layer is formed of a nitride compound in a group III to a group V.
摘要翻译：氮化物半导体晶片包括基板; 形成在所述基板上的氮化物化合物半导体层; 和形成在衬底和氮化物半导体层之间的Al x Ga 1-x As As层（x> = 0.6）。氮化物半导体层由III族至第V族的氮化物化合物形成。

4. 发明授权

US08664672B2 Light emitting panel having a plurality of light emitting element arrays arranged in descending order of wavelength 失效
标题翻译：发光面板具有以波长的降序排列的多个发光元件阵列
公开(公告)号：US08664672B2
公开(公告)日：2014-03-04
申请号：US12144689
申请日：2008-06-24
申请人： Mitsuhiko Ogihara , Takahito Suzuki , Tomoki Igari , Hiroyuki Fujiwara , Tomohiko Sagimori , Hironori Furuta , Yusuke Nakai
发明人： Mitsuhiko Ogihara , Takahito Suzuki , Tomoki Igari , Hiroyuki Fujiwara , Tomohiko Sagimori , Hironori Furuta , Yusuke Nakai
IPC分类号： H01L33/00
CPC分类号： G09F9/33
摘要： A light emitting panel includes a plurality of light emitting element arrays each of which has a plurality of light emitting elements arranged in a plane. The light emitting element arrays are configured so that an arrangement plane of the light emitting elements of one light emitting element array is overlapped with another arrangement plane of the light emitting elements of another light emitting element array in substantially parallel to each other, and so that the light emitting elements of one light emitting element array and the light emitting elements of another light emitting element array emit lights to the same side.
摘要翻译：发光面板包括多个发光元件阵列，每个发光元件阵列具有布置在平面中的多个发光元件。发光元件阵列被配置为使得一个发光元件阵列的发光元件的配置平面与另一个发光元件阵列的发光元件的另一个布置平面基本上彼此平行地重叠，并且因此一个发光元件阵列的发光元件和另一个发光元件阵列的发光元件向同一侧发光。

5. 发明授权

US07947576B2 Method of manufacturing by etching a semiconductor substrate horizontally without creating a vertical face 有权
标题翻译：通过在不产生垂直面的情况下水平蚀刻半导体衬底来制造方法
公开(公告)号：US07947576B2
公开(公告)日：2011-05-24
申请号：US12401754
申请日：2009-03-11
申请人： Tomoki Igari , Mitsuhiko Ogihara , Hiroyuki Fujiwara , Hironori Furuta , Takahito Suzuki , Tomohiko Sagimori , Yusuke Nakai
发明人： Tomoki Igari , Mitsuhiko Ogihara , Hiroyuki Fujiwara , Hironori Furuta , Takahito Suzuki , Tomohiko Sagimori , Yusuke Nakai
IPC分类号： H01L21/20
CPC分类号： H01L33/0095 , H01L33/0079
摘要： An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.
摘要翻译：本发明的一个方面提供一种制造半导体元件的方法的方法，包括以下步骤：在半导体衬底的顶部上外延生长半导体层; 通过在生长的半导体层的顶部上的图案化工艺形成图案来形成生长的半导体层的图案化部分; 通过第一蚀刻方法用第一蚀刻剂除去图案化部分以外的半导体层的一部分; 以及将第一蚀刻方法的结果浸入通过第二蚀刻方法仅蚀刻半导体衬底的第二蚀刻剂，从而从半导体层移除衬底。

6. 发明授权

US08816364B2 Display apparatus 有权
标题翻译：显示装置
公开(公告)号：US08816364B2
公开(公告)日：2014-08-26
申请号：US13555241
申请日：2012-07-23
申请人： Takahito Suzuki , Tomohiko Sagimori , Hiroyuki Fujiwara , Tomoki Igari , Yusuke Nakai , Hironori Furuta , Mitsuhiko Ogihara
发明人： Takahito Suzuki , Tomohiko Sagimori , Hiroyuki Fujiwara , Tomoki Igari , Yusuke Nakai , Hironori Furuta , Mitsuhiko Ogihara
IPC分类号： H01L33/08 , H01L25/075 , H01L33/64 , H01L51/00 , H01L33/20
CPC分类号： H01L25/0753 , H01L33/20 , H01L33/64 , H01L51/0024 , H01L2924/0002 , H01L2924/00
摘要： The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus being formed by bonding semiconductor thin film element on a plastic substrate, a thin film metal layer is formed on surface of the semiconductor thin film element for promoting heat release.
摘要翻译：本发明提供了使用塑料基板代替玻璃基板的显示装置，其可以解决塑料基板具有低导热性并且其放热性能变差的问题，从而难以获得稳定的性能和可靠性。在通过将半导体薄膜元件接合在塑料基板上而形成的显示装置中，在用于促进放热的半导体薄膜元件的表面上形成薄膜金属层。

7. 发明授权

US08269314B2 Display apparatus 有权
标题翻译：显示装置
公开(公告)号：US08269314B2
公开(公告)日：2012-09-18
申请号：US12071943
申请日：2008-02-28
申请人： Takahito Suzuki , Tomohiko Sagimori , Hiroyuki Fujiwara , Tomoki Igari , Yusuke Nakai , Hironori Furuta , Mitsuhiko Ogihara
发明人： Takahito Suzuki , Tomohiko Sagimori , Hiroyuki Fujiwara , Tomoki Igari , Yusuke Nakai , Hironori Furuta , Mitsuhiko Ogihara
IPC分类号： F21V29/00
CPC分类号： H01L25/0753 , H01L33/20 , H01L33/64 , H01L51/0024 , H01L2924/0002 , H01L2924/00
摘要： The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus, inner surface electrode integrated with vertical wiring between plastic substrate and thin film LED 102 is accumulated, the inner surface electrode acts as a heat release layer for releasing heat produced inside the thin film LED 102.
摘要翻译：本发明提供了使用塑料基板代替玻璃基板的显示装置，其可以解决塑料基板具有低导热性并且其放热性能变差的问题，从而难以获得稳定的性能和可靠性。在显示装置中，与塑料基板和薄膜LED102之间的垂直布线一体化的内表面电极被积聚，内表面电极用作用于释放在薄膜LED 102内产生的热量的散热层。

8. 发明申请

US20090212398A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20090212398A1
公开(公告)日：2009-08-27
申请号：US12379574
申请日：2009-02-25
申请人： Takahito Suzuki , Hiroyuki Fujiwara , Tomohiko Sagimori , Tomoki Igari , Hironori Furuta , Yusuke Nakai , Mitutsuhiko Ogihara
发明人： Takahito Suzuki , Hiroyuki Fujiwara , Tomohiko Sagimori , Tomoki Igari , Hironori Furuta , Yusuke Nakai , Mitutsuhiko Ogihara
IPC分类号： H01L23/34
CPC分类号： H01L33/12 , H01L23/145 , H01L23/3735 , H01L33/20 , H01L51/00 , H01L2924/0002 , H01L2924/00
摘要： A thin-film semiconductor element is formed on a plastic substrate in a semiconductor device. A thermal expansion buffer layer is interposed between the thin-film semiconductor element and the plastic substrate. Although the thin-film semiconductor element is made from a material with a thermal expansion coefficient differing from the thermal expansion coefficient of the plastic substrate, the thermal expansion buffer layer interposed between the thin-film semiconductor element and the plastic substrate protects the thin-film semiconductor element from damage caused by mechanical stress in the device fabrication process due to the different thermal expansion coefficients, enabling the semiconductor device to function reliably.
摘要翻译：在半导体器件中的塑料基板上形成薄膜半导体元件。在薄膜半导体元件和塑料基板之间插入热膨胀缓冲层。尽管薄膜半导体元件由具有与塑料基板的热膨胀系数不同的热膨胀系数的材料制成，但介于薄膜半导体元件和塑料基板之间的热膨胀缓冲层保护薄膜半导体元件由于不同的热膨胀系数而在器件制造过程中由机械应力引起的损坏，使半导体器件能够可靠地工作。

9. 发明申请

US20080042155A1 Semiconductor device, LED head and image forming apparatus 审中-公开
标题翻译：半导体器件，LED头和成像设备
公开(公告)号：US20080042155A1
公开(公告)日：2008-02-21
申请号：US11819385
申请日：2007-06-27
申请人： Hironori Furuta , Mitsuhiko Ogihara , Hiroyuki Fujiwara , Tomoki Igari , Masataka Muto
发明人： Hironori Furuta , Mitsuhiko Ogihara , Hiroyuki Fujiwara , Tomoki Igari , Masataka Muto
IPC分类号： H01L33/00 , H01L23/544
CPC分类号： H01L33/58 , B41J2/45 , G03G15/04036 , H01L21/78 , H01L33/0095
摘要： A semiconductor device is manufactured using dicing of a semiconductor wafer. The semiconductor device includes a substrate, a base insulating layer formed on the substrate, a semiconductor element formed on the base insulating layer, and a separate pattern portion formed on an end portion of the substrate separately from the base insulating layer. The separate pattern portion prevents the base insulating layer from being peeled off from the substrate when the dicing is performed.
摘要翻译：使用半导体晶片的切割制造半导体器件。半导体器件包括基板，形成在基板上的基底绝缘层，形成在基底绝缘层上的半导体元件以及与基底绝缘层分开形成在基板的端部上的单独图案部分。当执行切割时，单独的图案部分防止基底绝缘层从基板剥离。

10. 发明授权

US08304792B2 Semiconductor light emitting apparatus and optical print head 有权
标题翻译：半导体发光装置和光学打印头
公开(公告)号：US08304792B2
公开(公告)日：2012-11-06
申请号：US12347144
申请日：2008-12-31
申请人： Yusuke Nakai , Hironori Furuta , Mitsuhiko Ogihara , Hiroyuki Fujiwara
发明人： Yusuke Nakai , Hironori Furuta , Mitsuhiko Ogihara , Hiroyuki Fujiwara
IPC分类号： H01L33/02
CPC分类号： H01L33/0041 , H01L33/38 , H01S5/06203
摘要： A semiconductor light emitting apparatus is supplied capable of providing a high performance that can optimize simultaneously both an electrical characteristic and a light emitting characteristic. The semiconductor apparatus comprises an anode layer; a cathode layer that has a conductive type different from that of the anode layer; a gate layer that controls an electrical conduction between the anode layer and the cathode layer; an active layer that is set between the anode layer and the cathode layer and emits light through recombination of electron and positive hole; a first cladding layer that is set on one surface of the active layer and has an energy band gap larger than that of the active layer; and a second cladding layer that is set on other surface of the active layer, has an energy band gap larger than that of the active layer and has a conductive type different from that of the first cladding layer, wherein a thickness of the gate layer is or below a mean free path of carriers implanted into the gate layer.
摘要翻译：提供能够提供同时优化电特性和发光特性的高性能的半导体发光装置。半导体装置包括阳极层; 阴极层，其具有与阳极层不同的导电类型; 栅极层，其控制所述阳极层和所述阴极层之间的导电; 设置在阳极层和阴极层之间并通过电子和空穴的复合发光的有源层; 第一包层，其设置在所述有源层的一个表面上，并且具有比所述有源层的能带隙大的能带隙; 以及设置在有源层的其他表面上的第二包层具有比有源层的能带隙大的能带隙，并且具有与第一包层不同的导电类型，其中栅极层的厚度为或低于植入栅极层的载流子的平均自由程。

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