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1. 发明申请

US20060051846A1 Process for producing l-alpha-methylcysteine derivative 审中-公开
标题翻译：制备l-α-甲基半胱氨酸衍生物的方法
公开(公告)号：US20060051846A1
公开(公告)日：2006-03-09
申请号：US10526888
申请日：2003-08-27
申请人： Takahiro Ohishi , Hirokazu Nanba , Masanobu Sugawara , Masashi Izumida , Tatsuya Honda , Kouhei Mori , Satohiro Yanagisawa , Kenji Inoue
发明人： Takahiro Ohishi , Hirokazu Nanba , Masanobu Sugawara , Masashi Izumida , Tatsuya Honda , Kouhei Mori , Satohiro Yanagisawa , Kenji Inoue
IPC分类号： C12P17/16
CPC分类号： C12P17/10 , C07B2200/07 , C07C319/06 , C07C319/14 , C07C323/58 , C07C327/34 , C07D233/76 , C12P41/009
摘要： A process for easily producing an L-α-methylcysteine derivative or its salt, which is useful as a drug intermediate, from a cheap easily procurable raw material through an enzymatic D-stereoselective hydrolysis of racemic 5-halomethyl-5-methyl-hydantoin. L-α-methylcysteine derivative or its salt is produced by converting racemic 5-halomethyl-5-methylhydantoin to L-5-halomethyl-5-methylhydantoin through an enzymatic D-stereoselective hydrolysis, reacting the L-5-halomethyl-5-methylhydantoin with a sulfurizing agent into L-5-methyl-5-thiomethylhydantoin and hydrolyzing the L-5-methyl-5-thiomethylhydantoin.
摘要翻译：通过外消旋5-卤代甲基-5-甲基乙内酰脲的酶促D-立体选择性水解，从便宜的可原始的原料容易地制备可用作药物中间体的L-α-甲基半胱氨酸衍生物或其盐的方法。通过酶促D-立体选择性水解将外消旋5-卤代甲基-5-甲基乙内酰脲转化为L-5-卤代甲基-5-甲基乙内酰脲来制备L-α-甲基半胱氨酸衍生物或其盐，使L-5-卤代甲基-5-甲基乙内酰脲用硫化剂加入到L-5-甲基-5-硫代甲基乙内酰脲中并水解L-5-甲基-5-硫代甲基乙内酰脲。

2. 发明申请

US20100197934A1 PROCESS FOR PRODUCING OPTICALLY ACTIVE ALPHA-METHYLCYSTEINE DERIVATIVE 审中-公开
标题翻译：生产光学活性阿尔法 - 甲基蛋白衍生物的方法
公开(公告)号：US20100197934A1
公开(公告)日：2010-08-05
申请号：US12757947
申请日：2010-04-09
申请人： Takahiro Ohishi , Hirokazu Nanba , Masanobu Sugawara , Masashi Izumida , Tatsuya Honda , Kohei Mori , Satohiro Yanagisawa , Nobuo Nagashima , Kenji Inoue
发明人： Takahiro Ohishi , Hirokazu Nanba , Masanobu Sugawara , Masashi Izumida , Tatsuya Honda , Kohei Mori , Satohiro Yanagisawa , Nobuo Nagashima , Kenji Inoue
IPC分类号： C12P17/10 , C12P13/12 , C07C321/00 , C07D233/02
CPC分类号： C12P13/12 , C07C319/06 , C07D233/76 , C12P17/04 , C12P17/10 , C12P41/009 , C07C323/58
摘要： The present invention provides a simple industrial process for producing an L- or D-optically active α-methylcysteine derivative or its salt, which is a useful pharmaceutical intermediate, from readily available, inexpensive raw materials. In a process for producing an L- or D-optically active α-methylcysteine derivative or its salt, a racemic N-carbamoyl-α-methylcysteine derivative or its salt is D-selectively cyclized with hydantoinase to produce a D-5-methyl-5-thiomethylhydantoin derivative or its salt and an N-carbamoyl-α-methyl-L-cysteine derivative or its salt, which are then subjected to deprotection of the amino group and the sulfur atom, and hydrolysis.
摘要翻译：本发明提供了一种简单的工业方法，用于从容易获得的便宜的原料制备作为有用的药物中间体的L-或D-光学活性的α-甲基半胱氨酸衍生物或其盐。在制备L-或D-光学活性α-甲基半胱氨酸衍生物或其盐的方法中，外消旋的N-氨基甲酰基-α-甲基半胱氨酸衍生物或其盐与乙内酰脲酶D选择性环化以产生D-5-甲基 - 5-硫代甲基乙内酰脲衍生物或其盐和N-氨基甲酰基-α-甲基-L-半胱氨酸衍生物或其盐，然后进行氨基和硫原子的脱保护和水解。

3. 发明申请

US20060105435A1 Process for producing optically active alpha-methylcysteine derivative 审中-公开
标题翻译：光学活性α-甲基半胱氨酸衍生物的制备方法
公开(公告)号：US20060105435A1
公开(公告)日：2006-05-18
申请号：US10515658
申请日：2003-06-05
申请人： Takahiro Ohishi , Hirokazu Nanba , Masanobu Sugawara , Masashi Izumida , Tatsuya Honda , Kohei Mori , Satohiro Yanagisawa , Nobuo Nagashima , Kenji Inoue
发明人： Takahiro Ohishi , Hirokazu Nanba , Masanobu Sugawara , Masashi Izumida , Tatsuya Honda , Kohei Mori , Satohiro Yanagisawa , Nobuo Nagashima , Kenji Inoue
IPC分类号： C12P13/12 , C12P17/00
CPC分类号： C12P13/12 , C07C319/06 , C07D233/76 , C12P17/04 , C12P17/10 , C12P41/009 , C07C323/58
摘要： The present invention provides a simple industrial process for producing an L- or D-optically active α-methylcysteine derivative or its salt, which is a useful pharmaceutical intermediate, from readily available, inexpensive raw materials. In a process for producing an L- or D-optically active α-methylcysteine derivative or its salt, a racemic N-carbamoyl-α-methylcysteine derivative or its salt is D-selectively cyclized with hydantoinase to produce a D-5-methyl-5-thiomethylhydantoin derivative or its salt and an N-carbamoyl-α-methyl-L-cysteine derivative or its salt, which are then subjected to deprotection of the amino group and the sulfur atom, and hydrolysis.
摘要翻译：本发明提供了一种用于从容易得到的廉价原料生产L-或D-光学活性α-甲基半胱氨酸衍生物或其盐的简单工业方法，其是有用的药物中间体。在制备L-或D-光学活性α-甲基半胱氨酸衍生物或其盐的方法中，外消旋的N-氨基甲酰基-α-甲基半胱氨酸衍生物或其盐与乙内酰脲酶D选择性环化以产生D-5-甲基 - 5-硫代甲基乙内酰脲衍生物或其盐和N-氨基甲酰基-α-甲基-L-半胱氨酸衍生物或其盐，然后对氨基和硫原子进行脱保护和水解。

4. 发明申请

US20050153408A1 Process for preparation of 2-aminotetralin derivatives and intermediates thereof 审中-公开
标题翻译： 2-氨基四氢化萘衍生物的制备方法及其中间体
公开(公告)号：US20050153408A1
公开(公告)日：2005-07-14
申请号：US10496639
申请日：2002-11-28
申请人： Tatsuya Honda , Akio Fujii , Kenji Inoue , Yoshihiko Yasohara , Yoshifumi Itagaki , Katsuji Maehara , Toshihiro Takeda , Yasuyoshi Ueda
发明人： Tatsuya Honda , Akio Fujii , Kenji Inoue , Yoshihiko Yasohara , Yoshifumi Itagaki , Katsuji Maehara , Toshihiro Takeda , Yasuyoshi Ueda
IPC分类号： C07C213/02 , C07C217/74 , C07C303/28 , C07C309/66 , C07C309/73 , C12P7/42 , C12P7/62
CPC分类号： C12P7/42 , C07B2200/07 , C07C213/02 , C07C303/28 , C07C309/66 , C07C309/73 , C07C217/74
摘要： The present invention is to efficiently and simply prepare an optically active 7-substituted-2-aminotetralin with industrial advantage. In the process, a 7-substituted-2-tetralone or its bisulfite adduct is reduced with a microorganism to an optically active 7-substituted-2-tetralol. Then, a sulfonyl group is introduced to the hydroxy group to form an optically active 7-substituted-2-sulfonyloxytetralin. Then, with inversion of the configuration, a nitrogen substituent is introduced using a nitrogen nucleophile to form an optically active 2,7-substituted tetralin. Furthermore, if necessary, the nitrogen substituent is converted into a non-substituted amino group. Thus, an optically active 7-substituted-2-aminotetralin or its salt is prepared.
摘要翻译：本发明是有效且简单地制备具有工业优势的光学活性7-取代-2-氨基四氢萘酚。在此过程中，7-取代-2-四氢萘酮或其亚硫酸氢盐加合物与微生物一起还原成光学活性的7-取代-2-四氢萘酚。然后，将磺酰基引入羟基以形成光学活性的7-取代-2-磺酰氧基四氢萘酮。然后，通过配置的倒置，使用氮亲核试剂引入氮取代基以形成光学活性的2,7-取代的四氢化萘。此外，如果需要，氮取代基转化为未取代的氨基。因此，制备光学活性的7-取代-2-氨基四氢萘或其盐。

5. 发明授权

US08890152B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08890152B2
公开(公告)日：2014-11-18
申请号：US13495313
申请日：2012-06-13
申请人： Shunpei Yamazaki , Tatsuya Honda
发明人： Shunpei Yamazaki , Tatsuya Honda
IPC分类号： H01L29/04 , H01L29/786 , H01L29/778 , H01L29/267
CPC分类号： H01L29/7869 , H01L29/045 , H01L29/24 , H01L29/267 , H01L29/7782 , H01L29/78609 , H01L29/78696
摘要： One object of the present invention is to provide a structure of a transistor including an oxide semiconductor in a channel formation region in which the threshold voltage of electric characteristics of the transistor can be positive, which is a so-called normally-off switching element, and a manufacturing method thereof. A second oxide semiconductor layer which has greater electron affinity and a smaller energy gap than a first oxide semiconductor layer is formed over the first oxide semiconductor layer. Further, a third oxide semiconductor layer is formed to cover side surfaces and a top surface of the second oxide semiconductor layer, that is, the third oxide semiconductor layer covers the second oxide semiconductor layer.
摘要翻译：本发明的一个目的是提供在晶体管的电特性的阈值电压可以为正的沟道形成区域中的包括氧化物半导体的晶体管的结构，其是所谓的常关断开关元件，及其制造方法。在第一氧化物半导体层上形成具有比第一氧化物半导体层更大的电子亲和力和更小的能隙的第二氧化物半导体层。此外，形成第三氧化物半导体层以覆盖第二氧化物半导体层的侧表面和顶表面，即，第三氧化物半导体层覆盖第二氧化物半导体层。

6. 发明授权

US08629069B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08629069B2
公开(公告)日：2014-01-14
申请号：US12184401
申请日：2008-08-01
申请人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
发明人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
IPC分类号： H01L21/00
CPC分类号： H01L29/78696 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02266 , H01L21/02565 , H01L21/02631 , H01L21/428 , H01L21/465 , H01L21/477 , H01L27/1225 , H01L27/1285 , H01L29/04 , H01L29/045 , H01L29/7869
摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
摘要翻译：本发明的目的是提供一种半导体器件，其制造工艺不复杂并且可以通过以氧化锌为代表的氧化物半导体膜形成薄膜晶体管来制造成本。对于半导体器件，在基板上形成栅电极; 形成覆盖栅电极的栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体膜; 并且在氧化物半导体膜上形成第一导电膜和第二导电膜。氧化物半导体膜在沟道区域中至少具有结晶化区域。

7. 发明授权

US08569754B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08569754B2
公开(公告)日：2013-10-29
申请号：US13285385
申请日：2011-10-31
申请人： Shunpei Yamazaki , Yusuke Nonaka , Takatsugu Omata , Tatsuya Honda , Akiharu Miyanaga , Hiroki Ohara
发明人： Shunpei Yamazaki , Yusuke Nonaka , Takatsugu Omata , Tatsuya Honda , Akiharu Miyanaga , Hiroki Ohara
IPC分类号： H01L29/12
CPC分类号： H01L29/78693 , H01L27/1225 , H01L27/124 , H01L29/263 , H01L29/41733 , H01L29/45 , H01L29/4908 , H01L29/78618 , H01L29/78621 , H01L29/7869
摘要： A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like.
摘要翻译：提供具有新颖结构的半导体器件或半导体器件的制造方法。例如，提高了以高电压或大电流驱动的晶体管的可靠性。为了提高晶体管的可靠性，在漏电极层（或源极电极层）和氧化物半导体层之间设置缓冲层，使得缓冲层的端部超出漏电极层的侧面（或源电极层），从而缓冲层能够缓和电场的集中。缓冲层是包含多个层的单层或层叠层，例如包含氮的In-Ga-Zn-O膜，含有氮的In-Sn-O膜，In-Sn-O系膜， O膜等。

8. 发明申请

US20120097942A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120097942A1
公开(公告)日：2012-04-26
申请号：US13274512
申请日：2011-10-17
申请人： Yuki Imoto , Tetsunori Maruyama , Takatsugu Omata , Yusuke Nonaka , Tatsuya Honda , Akiharu Miyanaga
发明人： Yuki Imoto , Tetsunori Maruyama , Takatsugu Omata , Yusuke Nonaka , Tatsuya Honda , Akiharu Miyanaga
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/4908
摘要： It is an object of an embodiment of the present invention to reduce leakage current between a source and a drain in a transistor including an oxide semiconductor. As a first gate film in contact with a gate insulating film, a compound conductor which includes indium and nitrogen and whose band gap is less than 2.8 eV is used. Since this compound conductor has a work function of greater than or equal to 5 eV, preferably greater than or equal to 5.5 eV, the electron concentration in an oxide semiconductor film can be maintained extremely low. As a result, the leakage current between the source and the drain is reduced.
摘要翻译：本发明的一个实施例的目的是减少包括氧化物半导体的晶体管中的源极和漏极之间的漏电流。作为与栅极绝缘膜接触的第一栅极膜，使用包含铟和氮并且其带隙小于2.8eV的复合导体。由于该复合导体具有大于或等于5eV，优选大于或等于5.5eV的功函数，所以氧化物半导体膜中的电子浓度可以保持极低。结果，源极和漏极之间的漏电流减小。

9. 发明授权

US08058652B2 Semiconductor device used as electro-optical device having channel formation region containing first element, and source or drain region containing second element 有权
标题翻译：用作电光器件的半导体器件，其具有包含第一元件的沟道形成区域，以及包含第二元件的源极或漏极区域
公开(公告)号：US08058652B2
公开(公告)日：2011-11-15
申请号：US11258116
申请日：2005-10-26
申请人： Tatsuya Honda
发明人： Tatsuya Honda
IPC分类号： H01L29/76
CPC分类号： H01L21/02672 , H01L21/2026 , H01L27/3244 , H01L29/66765 , H01L29/78678
摘要： A semiconductor device having an island semiconductor film which is a channel formation region and a semiconductor film which is a source or drain region being in contact with a side face of the island semiconductor film, and a method for manufacturing the semiconductor device are disclosed. The manufacturing costs can be suppressed by forming the island semiconductor film which is to be a channel formation region and the semiconductor film which is to be a source or drain region without using a doping apparatus. The source or drain region is in contact with the side surface of the island semiconductor film which is the channel formation region, a depletion layer is broaden not only in a film thickness direction but also in the crosswise direction and an electric field due to drain voltage is relieved. Therefore, a semiconductor device with high reliability can be manufactured.
摘要翻译：公开了具有作为沟道形成区域的岛状半导体膜和作为与岛状半导体膜的侧面接触的源极或漏极区域的半导体膜的半导体器件及其制造方法。可以通过在不使用掺杂装置的情况下形成作为沟道形成区域的岛状半导体膜和作为源极或漏极区域的半导体膜来抑制制造成本。源极或漏极区域与作为沟道形成区域的岛状半导体膜的侧面接触，耗尽层不仅在膜厚度方向上而且在横向方向上扩大，而且由于漏极电压导致的电场放心了因此，可以制造具有高可靠性的半导体器件。

10. 外观设计

USD643004S1 Television receiver 有权
公开(公告)号：USD643004S1
公开(公告)日：2011-08-09
申请号：US29386346
申请日：2011-02-28
申请人： Tatsuya Honda , Charles Su
设计人： Tatsuya Honda , Charles Su

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