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1. 发明申请

US20090170225A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20090170225A1
公开(公告)日：2009-07-02
申请号：US12331515
申请日：2008-12-10
申请人： Takafumi Oka , Masatsugu Kusunoki , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
发明人： Takafumi Oka , Masatsugu Kusunoki , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
IPC分类号： H01L21/00
CPC分类号： H01L33/44 , H01L33/32 , H01L33/40
摘要： A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening.
摘要翻译：一种半导体发光器件的制造方法，包括在半导体衬底上形成绝缘膜，所述绝缘膜在其中具有开口，在所述开口和所述绝缘膜上形成Pd电极，并且在所述绝缘膜上除去所述Pd电极的所述部分通过对该部分施加物理力，同时将Pd电极留在开口中。

2. 发明授权

US07897418B2 Method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US07897418B2
公开(公告)日：2011-03-01
申请号：US12331515
申请日：2008-12-10
申请人： Takafumi Oka , Masatsugu Kusunoki , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
发明人： Takafumi Oka , Masatsugu Kusunoki , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
IPC分类号： H01L21/60 , H01L29/15 , H01L31/0256 , H01L27/15 , H01L29/16 , H01L31/12 , H01L33/00 , G01R31/26
CPC分类号： H01L33/44 , H01L33/32 , H01L33/40
摘要： A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening.
摘要翻译：一种半导体发光器件的制造方法，包括在半导体衬底上形成绝缘膜，所述绝缘膜在其中具有开口，在所述开口和所述绝缘膜上形成Pd电极，并且在所述绝缘膜上除去所述Pd电极的所述部分通过对该部分施加物理力，同时将Pd电极留在开口中。

3. 发明申请

US20100244074A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100244074A1
公开(公告)日：2010-09-30
申请号：US12716399
申请日：2010-03-03
申请人： Takafumi Oka , Shinji Abe , Kazushige Kawasaki , Junichi Horie , Hitoshi Sakuma
发明人： Takafumi Oka , Shinji Abe , Kazushige Kawasaki , Junichi Horie , Hitoshi Sakuma
IPC分类号： H01L33/58
CPC分类号： H01S5/34306 , H01S5/0425 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/3213
摘要： A semiconductor light-emitting device and a manufacturing method are provided, in which a metal film is deposited with positional differences between edges of an insulating film and the metal film, opposite a ridge waveguide top face, utilizing an overhanging-shaped resist pattern. An opening through the insulating film is extended in width without another masking step by etching the insulation film on the ridge waveguide top face, using the metal film as a mask. The contact area between a p-side electrode and a p-type contact layer is increased and operating voltage of the semiconductor light-emitting device is reduced.
摘要翻译：提供了一种半导体发光器件和制造方法，其中利用突出形状的抗蚀剂图案，沉积金属膜，其间绝缘膜和金属膜的边缘之间的位置差异与脊形波导顶面相对。通过使用金属膜作为掩模，通过蚀刻脊形波导顶面上的绝缘膜，通过绝缘膜延伸宽度而不进行另一掩蔽步骤。 p侧电极和p型接触层之间的接触面积增大，半导体发光元件的工作电压降低。

4. 发明申请

US20110193126A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20110193126A1
公开(公告)日：2011-08-11
申请号：US12911772
申请日：2010-10-26
申请人： Takafumi Oka , Shinji Abe , Kazushige Kawasaki , Hitoshi Sakuma
发明人： Takafumi Oka , Shinji Abe , Kazushige Kawasaki , Hitoshi Sakuma
IPC分类号： H01L33/40 , H01L21/283
CPC分类号： H01S5/32341 , H01L33/20 , H01L33/385 , H01L2933/0016 , H01S5/0425 , H01S5/22
摘要： A semiconductor light-emitting element comprises: a semiconductor substrate; a semiconductor laminated structure including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, and a contact layer that are sequentially laminated on the semiconductor substrate; a ridge portion in an upper portion of the semiconductor laminated structure; a channel portion adjoining opposite sides of the ridge portion; a terrace portion adjoining opposite sides of the channel portion and, with the channel portion, sandwiching the ridge portion; a first insulating film covering the channel portion and having openings on the ridge portion and the terrace portion; a single-layer adhesive layer on the first insulating film; a Pd electrode on the ridge portion and a part of the single-layer adhesive layer and electrically connected to the contact layer of the ridge portion; and a second insulating layer covering a portion not covered by the Pd electrode of the single-layer adhesive layer, and the terrace portion.
摘要翻译：半导体发光元件包括：半导体衬底; 半导体层叠结构，其包括依次层叠在所述半导体基板上的第一导电型半导体层，有源层，第二导电型半导体层和接触层; 半导体层叠结构的上部的脊部; 邻接所述脊部的相对侧的通道部分; 邻接通道部分的相对侧的平台部分，以及通道部分，夹住所述脊部; 覆盖所述通道部分并且在所述脊部和所述平台部分上具有开口的第一绝缘膜; 第一绝缘膜上的单层粘合剂层; 脊状部分上的Pd电极和单层粘合剂层的一部分，并且电连接到脊部的接触层; 以及覆盖单层粘合剂层的Pd电极未被覆盖的部分的第二绝缘层和露台部。

5. 发明申请

US20090184336A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090184336A1
公开(公告)日：2009-07-23
申请号：US12170503
申请日：2008-07-10
申请人： Takafumi Oka , Shinji Abe , Kazushige Kawasaki , Hitoshi Sakuma
发明人： Takafumi Oka , Shinji Abe , Kazushige Kawasaki , Hitoshi Sakuma
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32
摘要： A semiconductor light emitting device includes: a semiconductor layer; an insulating film on the semiconductor layer and having an opening; a multilayer adhesive layer on the insulating film; and a Pd electrode in contact with the semiconductor layer through the opening and in contact with the multilayer adhesive layer. The multilayer adhesive layer includes an Au layer at the top and an alloy of Au and Pd at the interface between the Au layer and the Pd electrode.
摘要翻译：一种半导体发光器件包括：半导体层; 半导体层上的绝缘膜，并具有开口; 绝缘膜上的多层粘合剂层; 以及通过开口与半导体层接触并与多层粘合剂层接触的Pd电极。多层粘合剂层包括顶部的Au层和在Au层和Pd电极之间的界面处的Au和Pd的合金。

6. 发明申请

US20090130790A1 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 失效
标题翻译：制造氮化物半导体发光元件的方法
公开(公告)号：US20090130790A1
公开(公告)日：2009-05-21
申请号：US12264976
申请日：2008-11-05
申请人： Kyozo Kanamoto , Katsuomi Shiozawa , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
发明人： Kyozo Kanamoto , Katsuomi Shiozawa , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
IPC分类号： H01L21/20
CPC分类号： H01S5/22 , B82Y20/00 , H01L33/32 , H01L33/40 , H01S5/0021 , H01S5/0425 , H01S5/2009 , H01S5/3213 , H01S5/34333 , H01S2301/173 , H01S2304/04
摘要： A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in an ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.
摘要翻译：一种氮化物半导体发光元件的制造方法，其特征在于，在基板上层叠n型氮化物半导体外延层，有源层和p型氮化物半导体外延层的半导体层叠结构体，在p型氮化物半导体外延层上形成具有含有Pd的第一电极层和含有Ta的第二电极层的p型电极; 在形成p型电极之后，在含有氧的环境中，在400℃和600℃之间的温度下进行热处理; 在热处理后，在p型电极上形成含有Au的焊盘电极。

7. 发明申请

US20090127661A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20090127661A1
公开(公告)日：2009-05-21
申请号：US12271946
申请日：2008-11-17
申请人： Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Hiroshi Kurokawa , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
发明人： Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Hiroshi Kurokawa , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
IPC分类号： H01L29/20 , H01L21/31
CPC分类号： H01S5/32341 , H01S5/0425 , H01S5/22 , H01S2301/173
摘要： Semiconductor devices, in particular nitride semiconductor devices for use in the manufacture of laser diodes, prevent peeling-off of the electrode, and at the same time reduces the complexity of processes and a reduction in yield. A nitride semiconductor device according to the invention includes a P-type nitride semiconductor layer with a ridge on its surface, an SiO2 film covering at least the side face of the ridge, an adherence layer formed on a surface of the SiO2 film and composed mainly of silicon, and a P-type electrode formed on the upper surface of the ridge and on a surface of the adherence layer.
摘要翻译：半导体器件，特别是用于制造激光二极管的氮化物半导体器件，防止电极剥离，并且同时降低了工艺的复杂性和产量的降低。根据本发明的氮化物半导体器件包括其表面上具有脊的P型氮化物半导体层，至少覆盖脊的侧面的SiO 2膜，形成在SiO 2膜的表面上并且主要组成的粘附层的硅，以及形成在脊的上表面上和粘附层的表面上的P型电极。

8. 发明授权

US07964424B2 Method for manufacturing nitride semiconductor light-emitting element 失效
标题翻译：氮化物半导体发光元件的制造方法
公开(公告)号：US07964424B2
公开(公告)日：2011-06-21
申请号：US12264976
申请日：2008-11-05
申请人： Kyozo Kanamoto , Katsuomi Shiozawa , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
发明人： Kyozo Kanamoto , Katsuomi Shiozawa , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L33/32 , H01L33/40 , H01S5/0021 , H01S5/0425 , H01S5/2009 , H01S5/3213 , H01S5/34333 , H01S2301/173 , H01S2304/04
摘要： A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.
摘要翻译：一种氮化物半导体发光元件的制造方法，其特征在于，在基板上层叠有n型氮化物半导体外延层，有源层和p型氮化物半导体外延层的半导体层叠结构体，在p型氮化物半导体外延层上形成具有含有Pd的第一电极层和含有Ta的第二电极层的p型电极; 在形成p型电极之后，在含有氧的环境中，在400℃和600℃之间的温度下进行热处理; 在热处理后，在p型电极上形成含有Au的焊盘电极。

9. 发明申请

US20080280386A1 METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US20080280386A1
公开(公告)日：2008-11-13
申请号：US11930395
申请日：2007-10-31
申请人： Kazushige Kawasaki , Toshiaki Kitano , Takafumi Oka
发明人： Kazushige Kawasaki , Toshiaki Kitano , Takafumi Oka
IPC分类号： H01L33/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0425 , H01S5/2009 , H01S5/2086 , H01S5/2214 , H01S5/3211 , H01S5/34333
摘要： A method for manufacturing an laser diode includes: providing a wafer having thereon a semiconductor structure; depositing an SiO2 film; forming channels and a waveguide ridge between the channels in the wafer; forming an SiO2 film over the wafer; forming a resist pattern covering the SiO2 film in the channels such that the top surfaces of the resist pattern are lower than the top surface of the deposited SiO2 film on the top of the waveguide ridge, the resist pattern exposing the SiO2 film on the top of the waveguide ridge; removing the SiO2 film and the deposited SiO2 film by wet etching, using the resist pattern as a mask, to expose a p-GaN layer in the waveguide ridge; and forming an electrode layer on the top surface of the p-GaN layer.
摘要翻译：制造激光二极管的方法包括：提供其上具有半导体结构的晶片; 沉积SiO 2膜; 在晶片中的通道之间形成通道和波导脊; 在晶片上形成SiO 2膜; 在通道中形成覆盖SiO 2膜的抗蚀剂图案，使得抗蚀剂图案的顶表面比顶部上沉积的SiO 2膜的顶表面低的波导脊，在波导脊的顶部上暴露出SiO 2膜的抗蚀剂图案; 通过湿式蚀刻，使用抗蚀剂图案作为掩模去除SiO 2膜和沉积的SiO 2膜，以暴露波导脊中的p-GaN层; 以及在p-GaN层的顶表面上形成电极层。

10. 发明申请

US20080311694A1 METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE 失效
标题翻译：制造半导体光学器件的方法
公开(公告)号：US20080311694A1
公开(公告)日：2008-12-18
申请号：US11946917
申请日：2007-11-29
申请人： Kazushige Kawasaki , Takafumi Oka , Katsuomi Shiozawa
发明人： Kazushige Kawasaki , Takafumi Oka , Katsuomi Shiozawa
IPC分类号： H01L33/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0425 , H01S5/2009 , H01S5/2086 , H01S5/2214 , H01S5/34333
摘要： An SiO2 film is formed on a semiconductor layer stack, the SiO2 film having a thickness da and an etch rate Ra in buffered (BHF). A waveguide ridge with the SiO2 film thereon is formed using a resist pattern 76. An SiN film is formed on top and both sides of the waveguide ridge, while leaving the resist pattern in place, the SiN film having a thickness db and an etch rate Rb in BHF, where 1
摘要翻译：在半导体层堆叠上形成SiO 2膜，SiO 2膜具有厚度da和缓冲（BHF）中的蚀刻速率Ra。使用抗蚀剂图案76形成其上具有SiO 2膜的波导脊。SiN膜在波导脊的顶部和两侧形成，同时使抗蚀剂图案保持在适当位置，SiN膜具有厚度db和蚀刻速率 Rb在BHF中，其中1 <（db / Rb）/（da / Ra）。然后通过剥离去除SiN膜的抗蚀剂图案和上覆部分，以在SiN膜中形成开口。用BHF湿法蚀刻预定的时间段，从而将SiN膜从波导脊除去，同时使SiN膜保持在适当的位置。

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