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    • 6. 发明授权
    • Method for reducing the thickness of an SOI layer
    • 降低SOI层厚度的方法
    • US09064929B2
    • 2015-06-23
    • US12153519
    • 2008-05-20
    • Shoji AkiyamaYoshihiro KubotaAtsuo ItoKoichi TanakaMakoto KawaiYuuji Tobisaka
    • Shoji AkiyamaYoshihiro KubotaAtsuo ItoKoichi TanakaMakoto KawaiYuuji Tobisaka
    • H01L21/762H01L21/3065H01L21/66
    • H01L21/76254H01L21/3065H01L22/12H01L22/20H01L2924/014
    • There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.
    • 公开了一种用于制造SOI晶片的方法,包括:将氢离子和稀有气体离子中的至少一种注入施主晶片以形成离子注入层的步骤; 将施主晶片的离子注入表面接合到处理晶片的步骤; 在离子注入层分层施主晶片以降低施主晶片的膜厚,从而提供SOI层的步骤; 以及蚀刻所述SOI层以减小所述SOI层的厚度的步骤,其中所述蚀刻步骤包括:执行粗蚀刻的阶段,如湿蚀刻; 在粗蚀刻之后测量SOI层的膜厚分布的阶段; 以及基于所测量的SOI层的膜厚分布,进行干蚀刻的精确蚀刻的阶段。 可以提供一种以优异的生产率制造具有SOI层的高膜厚均匀性的SOI晶片的方法。