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1. 发明授权

US09153620B2 Method of fabricating a metal grid for semiconductor device 有权
标题翻译：制造半导体器件的金属栅格的方法
公开(公告)号：US09153620B2
公开(公告)日：2015-10-06
申请号：US14194859
申请日：2014-03-03
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chih-Chien Wang , Chihy-Yuan Cheng , Chuan-Ling Wu , Chun-Chang Chen , Wang-Pen Mo , Feng-Jia Shiu
IPC分类号： H01L21/20 , H01L27/146
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14689 , H01L27/1469
摘要： A method for manufacturing the image sensor device is provided. The method includes depositing a first dielectric layer over a back surface of a substrate, forming a ridge over the first dielectric layer, depositing a second dielectric layer over the first dielectric layer, including filling in a space between two adjacent ridges. The method also includes removing the ridge to form a trench in the second dielectric layer and forming a metal grid in the trench.
摘要翻译：提供了一种用于制造图像传感器装置的方法。该方法包括在衬底的背表面上沉积第一介电层，在第一介电层上形成脊，在第一介电层上沉积第二电介质层，包括填充两个相邻脊之间的空间。该方法还包括去除脊以在第二电介质层中形成沟槽并在沟槽中形成金属栅格。

2. 发明申请

US20150249109A1 METHOD OF FABRICATING A METAL GRID FOR SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造半导体器件的金属网的方法
公开(公告)号：US20150249109A1
公开(公告)日：2015-09-03
申请号：US14194859
申请日：2014-03-03
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chih-Chien Wang , Chihy-Yuan Cheng , Chuan-Ling Wu , Chun-Chang Chen , Wang-Pen Mo , Feng-Jia Shiu
IPC分类号： H01L27/146
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14689 , H01L27/1469
摘要： A method for manufacturing the image sensor device is provided. The method includes depositing a first dielectric layer over a back surface of a substrate, forming a ridge over the first dielectric layer, depositing a second dielectric layer over the first dielectric layer, including filling in a space between two adjacent ridges. The method also includes removing the ridge to form a trench in the second dielectric layer and forming a metal grid in the trench.
摘要翻译：提供了一种用于制造图像传感器装置的方法。该方法包括在衬底的背表面上沉积第一介电层，在第一介电层上形成脊，在第一介电层上沉积第二电介质层，包括填充两个相邻脊之间的空间。该方法还包括去除脊以在第二电介质层中形成沟槽并在沟槽中形成金属栅格。

3. 发明授权

US09875892B2 Method of forming a photoresist layer 有权
公开(公告)号：US09875892B2
公开(公告)日：2018-01-23
申请号：US14707387
申请日：2015-05-08
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chun-Wei Chang , Chih-Chien Wang , Wang-Pen Mo , Hung-Chang Hsieh
IPC分类号： B05D3/12 , H01L21/02 , H01L21/027 , H01L21/67 , B05D1/00
CPC分类号： H01L21/02282 , B05D1/005 , G03F7/091 , G03F7/162 , H01L21/0271 , H01L21/0276 , H01L21/6715
摘要： A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.

4. 发明申请

US20160195807A1 Lithography Process on High Topology Features 审中-公开
标题翻译：高拓扑特征的平版印刷工艺
公开(公告)号：US20160195807A1
公开(公告)日：2016-07-07
申请号：US15067937
申请日：2016-03-11
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chun-Wei Chang , Hong-Da Lin , Chih-Chien Wang , Chun-Chang Chen , Wang-Pen Mo , Hung-Chang Hsieh
IPC分类号： G03F7/00 , G03F7/20 , G03F7/32 , G03F7/16
CPC分类号： G03F7/0035 , G03F7/091 , G03F7/16 , G03F7/20 , G03F7/32
摘要： A method includes forming a first photo resist layer over a base structure and a target feature over the base structure, performing an un-patterned exposure on the first photo resist layer, and developing the first photo resist layer. After the step of developing, a corner portion of the first photo resist layer remains at a corner between a top surface of the base structure and an edge of the target feature. A second photo resist layer is formed over the target feature, the base structure, and the corner portion of the first photo resist layer. The second photo resist layer is exposed using a patterned lithography mask. The second photo resist layer is patterned to form a patterned photo resist.
摘要翻译：一种方法包括在基底结构之上形成第一光致抗蚀剂层，在基底结构上形成目标特征，在第一光致抗蚀剂层上进行未图案化曝光，以及显影第一光刻胶层。在显影步骤之后，第一光致抗蚀剂层的角部保留在基底结构的顶表面和目标特征的边缘之间的角落处。在目标特征，基底结构和第一光致抗蚀剂层的角部上形成第二光致抗蚀剂层。使用图案化光刻掩模曝光第二光致抗蚀剂层。图案化第二光致抗蚀剂层以形成图案化的光刻胶。

5. 发明授权

US09285677B2 Lithography process on high topology features 有权
标题翻译：高拓扑特征的平版印刷工艺
公开(公告)号：US09285677B2
公开(公告)日：2016-03-15
申请号：US14071890
申请日：2013-11-05
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chun-Wei Chang , Hong-Da Lin , Chih-Chien Wang , Chun-Chang Chen , Wang-Pen Mo , Hung-Chang Hsieh
IPC分类号： G03F7/26 , G03F7/00 , G03F7/09
CPC分类号： G03F7/0035 , G03F7/091 , G03F7/16 , G03F7/20 , G03F7/32
摘要： A method includes forming a first photo resist layer over a base structure and a target feature over the base structure, performing an un-patterned exposure on the first photo resist layer, and developing the first photo resist layer. After the step of developing, a corner portion of the first photo resist layer remains at a corner between a top surface of the base structure and an edge of the target feature. A second photo resist layer is formed over the target feature, the base structure, and the corner portion of the first photo resist layer. The second photo resist layer is exposed using a patterned lithography mask. The second photo resist layer is patterned to form a patterned photo resist.
摘要翻译：一种方法包括在基底结构之上形成第一光致抗蚀剂层，在基底结构上形成目标特征，在第一光致抗蚀剂层上进行未图案化曝光，以及显影第一光刻胶层。在显影步骤之后，第一光致抗蚀剂层的角部保留在基底结构的顶表面和目标特征的边缘之间的角落处。在目标特征，基底结构和第一光致抗蚀剂层的角部上形成第二光致抗蚀剂层。使用图案化光刻掩模曝光第二光致抗蚀剂层。图案化第二光致抗蚀剂层以形成图案化的光刻胶。

6. 发明申请

US20140272715A1 Lithography Process on High Topology Features 有权
标题翻译：高拓扑特征的平版印刷工艺
公开(公告)号：US20140272715A1
公开(公告)日：2014-09-18
申请号：US14071890
申请日：2013-11-05
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chun-Wei Chang , Hong-Da Lin , Chih-Chien Wang , Chun-Chang Chen , Wang-Pen Mo , Hung-Chang Hsieh
IPC分类号： G03F7/00
CPC分类号： G03F7/0035 , G03F7/091 , G03F7/16 , G03F7/20 , G03F7/32
摘要： A method includes forming a first photo resist layer over a base structure and a target feature over the base structure, performing an un-patterned exposure on the first photo resist layer, and developing the first photo resist layer. After the step of developing, a corner portion of the first photo resist layer remains at a corner between a top surface of the base structure and an edge of the target feature. A second photo resist layer is formed over the target feature, the base structure, and the corner portion of the first photo resist layer. The second photo resist layer is exposed using a patterned lithography mask. The second photo resist layer is patterned to form a patterned photo resist.
摘要翻译：一种方法包括在基底结构之上形成第一光致抗蚀剂层，在基底结构上形成目标特征，在第一光致抗蚀剂层上进行未图案化曝光，以及显影第一光刻胶层。在显影步骤之后，第一光致抗蚀剂层的角部保留在基底结构的顶表面和目标特征的边缘之间的角落处。在目标特征，基底结构和第一光致抗蚀剂层的角部上形成第二光致抗蚀剂层。使用图案化光刻掩模曝光第二光致抗蚀剂层。图案化第二光致抗蚀剂层以形成图案化的光刻胶。

7. 发明授权

US09791775B2 Lithography process on high topology features 有权
公开(公告)号：US09791775B2
公开(公告)日：2017-10-17
申请号：US15067937
申请日：2016-03-11
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chun-Wei Chang , Hong-Da Lin , Chih-Chien Wang , Chun-Chang Chen , Wang-Pen Mo , Hung-Chang Hsieh
IPC分类号： G03F7/207 , G03F7/00 , G03F7/09 , G03F7/16 , G03F7/20 , G03F7/32
CPC分类号： G03F7/0035 , G03F7/091 , G03F7/16 , G03F7/20 , G03F7/32
摘要： A method includes forming a first photo resist layer over a base structure and a target feature over the base structure, performing an un-patterned exposure on the first photo resist layer, and developing the first photo resist layer. After the step of developing, a corner portion of the first photo resist layer remains at a corner between a top surface of the base structure and an edge of the target feature. A second photo resist layer is formed over the target feature, the base structure, and the corner portion of the first photo resist layer. The second photo resist layer is exposed using a patterned lithography mask. The second photo resist layer is patterned to form a patterned photo resist.

8. 发明申请

US20150243500A1 METHOD OF FORMING A PHOTORESIST LAYER 有权
标题翻译：形成光电层的方法
公开(公告)号：US20150243500A1
公开(公告)日：2015-08-27
申请号：US14707387
申请日：2015-05-08
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chun-Wei Chang , Chih-Chien Wang , Wang-Pen Mo , Hung-Chang Hsieh
IPC分类号： H01L21/02 , H01L21/027
CPC分类号： H01L21/02282 , B05D1/005 , G03F7/091 , G03F7/162 , H01L21/0271 , H01L21/0276 , H01L21/6715
摘要： A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.
摘要翻译：公开了一种在半导体器件上形成光致抗蚀剂层的方法。示例性的包括提供晶片。该方法还包括在第一次循环期间以第一速度旋转晶片，同时将预湿材料分配在晶片上并以第二速度在第一周期期间旋转晶片，同时预湿材料继续被分配在晶圆上。该方法还包括在第一速度的第二循环期间旋转晶片，同时预湿材料继续分配在晶片上，并且在第二次循环期间以第二速度旋转晶片，同时预湿材料继续分配在晶片上。该方法还包括以三速旋转晶片，同时将光致抗蚀剂材料分配在包括预湿材料的晶片上。

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