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1. 发明专利

JP2011119646A Method and apparatus of providing overlay 有权
标题翻译：提供覆盖的方法和装置
公开(公告)号：JP2011119646A
公开(公告)日：2011-06-16
申请号：JP2010158729
申请日：2010-07-13
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司Taiwan Semiconductor Manufacturing Company,Ltd.
发明人： HUANG KUO-TSAI , LIANG FU-JYE , CHEN LI-JUI , KE CHIH-MING
IPC分类号： H01L21/027
CPC分类号： G03F7/70283 , G03F7/70633 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an overlay mark used in a photolithography process. SOLUTION: A method of manufacturing a semiconductor device includes: a process 13 for preparing a substrate; a process 15 for forming a first part of the overlay mark in the substrate, wherein the first part includes a plurality of first features each having a first dimension measured in a first direction and a second dimension larger than the first dimension and measured in a second direction approximately orthogonal to the first direction; and a process 17 for forming a second part of the overlay mark in the substrate, wherein the second part includes a plurality of second features each having a third dimension measured in the first direction and a fourth dimension measured in the second direction and smaller than the third dimension. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供在光刻工艺中使用的覆盖标记。解决方案：制造半导体器件的方法包括：用于制备衬底的工艺13; 用于在衬底中形成覆盖标记的第一部分的工艺15，其中第一部分包括多个第一特征，每个第一特征具有在第一方向上测量的第一尺寸和大于第一尺寸的第二尺寸，并在第二部分中测量大致与第一方向正交的方向; 以及用于在基板中形成覆盖标记的第二部分的工艺17，其中第二部分包括多个第二特征，每个第二特征具有在第一方向上测量的第三尺寸和在第二方向上测量的第四尺寸，第三维。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2006287232A Matching type optical measurement for dynamically controlling critical dimension (cd), and lithographic process system 审中-公开
标题翻译：用于动态控制关键尺寸（CD）和光刻过程系统的匹配型光学测量
公开(公告)号：JP2006287232A
公开(公告)日：2006-10-19
申请号：JP2006101810
申请日：2006-04-03
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司
发明人： KE CHIH-MING , YU SHING-SHEN , WANG YU-HSI , GAU TSAI-SHENG , KO TOKUCHI
IPC分类号： H01L21/027
CPC分类号： G03F7/70625
摘要： PROBLEM TO BE SOLVED: To enhance the productivity of wafers by improving CD during photoresist process and uniformity of CD.
SOLUTION: The following steps are included. A first resist layer is formed on a first process wafer. In a heating process, a first resist pattern is formed on the first resist layer, based on a first temperature curve. After this, light beams scattered from the first resist pattern are generated and collected. Then, 3D data of the CD of the first resist pattern is obtained by processing the scattered light beams. Subsequently, the CD of a second resist pattern is obtained, by determining a second temperature curve necessary for the heating process. In the CD of the second resist pattern, the second resist pattern on a second process wafer is included. Finally, in the heating process, the second resist pattern is formed based on the second temperature curve.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过改善光致抗蚀剂工艺中的CD和CD的均匀性来提高晶片的生产率。
解决方案：包括以下步骤。在第一工艺晶片上形成第一抗蚀剂层。在加热过程中，基于第一温度曲线在第一抗蚀剂层上形成第一抗蚀剂图案。之后，产生并收集从第一抗蚀剂图案散射的光束。然后，通过处理散射光获得第一抗蚀剂图案的CD的3D数据。随后，通过确定加热过程所需的第二温度曲线，获得第二抗蚀剂图案的CD。在第二抗蚀剂图案的CD中，包括第二处理晶片上的第二抗蚀剂图案。最后，在加热过程中，基于第二温度曲线形成第二抗蚀剂图案。版权所有（C）2007，JPO＆INPIT

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