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1. 发明专利

JP2006237575A Wafer repair method of direct-writing system 有权
标题翻译：直接写字系统的WAFER修复方法
公开(公告)号：JP2006237575A
公开(公告)日：2006-09-07
申请号：JP2006000849
申请日：2006-01-05
申请人： Taiwan Semiconductor Manufacturing Co Ltd , タイワンセミコンダクターマニュファクチャリングカンパニーリミテッド
发明人： LIN CHIN-HSIANG , LIN BURN JENG , GAU TSAI-SHENG
IPC分类号： H01L21/02 , H01L21/3205 , H01L23/52
CPC分类号： G03F7/7065 , G03F7/70383 , H01L22/22 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a wafer repair method of a direct-writing system capable of decreasing a time duration and a cost by carrying out a processing by means of the direct-writing system in a repair process. SOLUTION: The wafer repair method comprises steps of: searching for plural locations and patterns in plural defective regions out of a semiconductor wafer 100; transmitting the locations and the patterns in the defective regions to a direct-writing tool 220; forming a photoresist layer on the semiconductor wafer 100; locally exposing the photoresist layer within the defective regions by using an energy beam; developing the photoresist layer on the semiconductor wafer 100; and processing the semiconductor wafer 100 under the photoresist layer after exposing and developing. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够通过在修复过程中通过直接写入系统进行处理来减少持续时间和成本的直接写入系统的晶片修复方法。解决方案：晶片修复方法包括以下步骤：从半导体晶片100中搜索多个缺陷区域中的多个位置和图案; 将缺陷区域中的位置和图案发送到直写工具220; 在半导体晶片100上形成光致抗蚀剂层; 通过使用能量束将缺陷区域内的光致抗蚀剂层局部曝光; 在半导体晶片100上显影光致抗蚀剂层; 以及在曝光和显影之后在光致抗蚀剂层下方处理半导体晶片100。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2006210923A System for manufacturing pattern on substrate and method therefor 有权
标题翻译：用于制造基板上的图案的系统及其方法
公开(公告)号：JP2006210923A
公开(公告)日：2006-08-10
申请号：JP2006016904
申请日：2006-01-25
申请人： Taiwan Semiconductor Manufacturing Co Ltd , タイワンセミコンダクターマニュファクチャリングカンパニーリミテッド
发明人： LIN CHIN-HSIANG , LIN BURN JENG
IPC分类号： H01L21/027 , G03F7/00 , G03F7/20
CPC分类号： G03F7/70466 , G03F7/001 , G03F7/201 , G03F7/203 , G03F7/70408
摘要： PROBLEM TO BE SOLVED: To provide an interference photolithography system for manufacturing a pattern in a photosensitive material, and to provide a method therefore. SOLUTION: The invention comprises the steps of classifying patterns into a first subpattern, comprising a plurality of lines turning in a first direction and a second subpattern, comprising a plurality of lines turning in a second direction; forming the plurality of first lines turning in the first direction on a first photosensitive material layer on a substrate by using a first standing wave interference pattern; forming the first subpattern by trimming a part of the first line; providing a second photosensitive material layer, after forming the first subpattern; forming the plurality of second lines turning in the second direction on the second photosensitive material layer by using a second standing wave interference pattern; and forming the second subpattern by trimming a part of the second line. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供用于制造感光材料中的图案的干涉光刻系统，并因此提供一种方法。解决方案：本发明包括将图案分类为第一子图案的步骤，包括沿第一方向转动的多条线和第二子图案，包括沿第二方向转动的多条线; 通过使用第一驻波干涉图案，在基板上的第一感光材料层上形成在第一方向上转动的多条第一线; 通过修剪第一行的一部分来形成第一子模式; 在形成第一子图案之后提供第二感光材料层; 通过使用第二驻波干涉图形形成在第二感光材料层上沿第二方向转动的多条第二线; 以及通过修剪所述第二线的一部分来形成所述第二子图案。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2007165852A Method and system for immersion lithography 有权
标题翻译：方法和系统的渗透层析
公开(公告)号：JP2007165852A
公开(公告)日：2007-06-28
申请号：JP2006280557
申请日：2006-10-13
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾セミコンダクターマニュファクチャリングカンパニーリミテッドTaiwan Semiconductor Manufacturing Co., Ltd.
发明人： CHANG CHING-YU , LIN CHIN-HSIANG , LIN BURN JENG , LU DING CHUNG
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/2041 , G03F7/70341 , G03F7/70941
摘要： PROBLEM TO BE SOLVED: To provide a method and a system for immersion lithography by which static electricity accumulated in an exposure step is effectively removed by using a conductive fluid as an immersion liquid. SOLUTION: This method for immersion lithography includes a step for preparing a substrate 110 coated with a resist layer 120, a step for charging a conductive immersion liquid 150 between the substrate 110 and an objective lens of a lithography system 100, and a step for irradiating the resist layer 120 by using a radiation energy through the objective lens and the conductive immersion liquid 150. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于浸没光刻的方法和系统，通过使用导电流体作为浸没液体，可以有效地去除曝光步骤中积聚的静电。解决方案：浸渍光刻方法包括制备涂覆有抗蚀剂层120的基板110的步骤，用于在基板110和光刻系统100的物镜之间填充导电浸没液体150的步骤，以及通过使用辐射能量通过物镜和导电浸渍液体150照射抗蚀剂层120的步骤。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2007123897A Photolithography system for manufacturing semiconductor and method therefor 审中-公开
标题翻译：用于制造半导体的光刻机系统及其方法
公开(公告)号：JP2007123897A
公开(公告)日：2007-05-17
申请号：JP2006290980
申请日：2006-10-26
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司
发明人： CHEN KUEI SHUN , LIN CHIN-HSIANG , GAU TSAI-SHENG , CHEN CHUN-KUANG , LU HSIAO-TZU , LIANG FU-JYE
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70333 , G03F7/70091 , G03F7/70108 , G03F7/70283 , G03F7/70641 , G03F9/7026
摘要： PROBLEM TO BE SOLVED: To provide a photolithography system for manufacturing a semiconductor and a method therefor capable of reducing proximity effect and increasing DOF (Depth of Field). SOLUTION: The method for manufacturing the semiconductor comprising a step 12 that prepares a substrate, a step 14 that coats a photoresist layer on the substrate, and a step 16 that exposes the substrate by combining both high-angle illumination method and focus drift exposure method. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造半导体的光刻系统及其能够降低邻近效应并增加DOF（景深）的方法。解决方案：制造半导体的方法包括制备衬底的步骤12，涂覆在衬底上的光致抗蚀剂层的步骤14以及通过组合高角度照明方法和焦点来曝光衬底的步骤16 漂移曝光法。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2007129217A Photolithographic method in production of semiconductor device 有权
标题翻译：半导体器件生产中的光刻方法
公开(公告)号：JP2007129217A
公开(公告)日：2007-05-24
申请号：JP2006290632
申请日：2006-10-26
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司
发明人： LIN CHIN-HSIANG
IPC分类号： H01L21/306 , H01L21/027 , H01L21/3065
CPC分类号： H01L21/0271 , G03F7/40 , G03F7/405 , H01L21/0332 , H01L21/31144 , H01L21/32139
摘要： PROBLEM TO BE SOLVED: To obtain benefits of a thin photosensitive layer while reducing the number of development/etching steps required in a general case where a photosensitive layer and a buffer/etch-stop layer are used.
SOLUTION: A photolithographic method in production of a semiconductor device comprises a step of forming a photosensitive layer on a substrate; a step of patterning the photosensitive layer by using a predetermined pattern; a step of developing the photosensitive layer to form a seed layer having a pattern corresponding to the predetermined pattern; and a step of forming a thick layer, which is composed of multiple long-chain molecules and is substantially perpendicular to the seed layer, only on the seed layer.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了获得薄感光层的优点，同时减少了使用感光层和缓冲/蚀刻停止层的一般情况下所需的显影/蚀刻步骤的数量。解决方案：制造半导体器件时的光刻方法包括在衬底上形成感光层的步骤; 通过使用预定图案来图案化感光层的步骤; 显影感光层以形成具有对应于预定图案的图案的种子层的步骤; 以及仅在种子层上形成由多个长链分子构成并且基本上垂直于种子层的厚层的步骤。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2007081373A Liquid immersion lithography method and system 有权
标题翻译：液体渗透测绘方法与系统
公开(公告)号：JP2007081373A
公开(公告)日：2007-03-29
申请号：JP2006183325
申请日：2006-07-03
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司
发明人： CHANG CHING-YU , LIN CHIN-HSIANG
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70341
摘要： PROBLEM TO BE SOLVED: To provide a liquid immersion lithography method and system for reducing microbubbles formed in ionized water. SOLUTION: A liquid immersion lithography system comprises: an imaging lens 130 having a front part; a substrate stage 160 arranged at the lower part of the front part of the imaging lens; and a liquid immersion fluid retaining structure 140 retaining a first fluid at least partially filling a space located between the front part and a substrate 110 of the substrate stage 160. The liquid immersion fluid retaining structure 140 further includes at least one of a first inlet or a second inlet. The first inlet is arranged in the vicinity of the imaging lens and connected with a vacuum pump system. The first inlet supplies the first fluid to the space. The second inlet is arranged in the vicinity of the imaging lens to supply the second fluid to the substrate. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于减少在电离水中形成的微泡的液浸光刻方法和系统。液浸光刻系统包括：具有前部的成像透镜130; 设置在摄像透镜的前部的下部的衬底台160; 以及液浸液体保持结构140，其保持至少部分地填充位于基底台160的前部和基底110之间的空间的第一流体。液体浸没流体保持结构140还包括第一入口或第二个入口第一入口布置在成像透镜附近并与真空泵系统连接。第一个入口将第一个流体供应到空间。第二入口布置在成像透镜附近以将第二流体供应到基底。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007013163A Liquid immersion method to semiconductor substrate and treatment apparatus to be used in liquid immersion lithography process 审中-公开
标题翻译：半导体衬底的液体渗透方法和用于液体渗透光刻工艺的处理装置
公开(公告)号：JP2007013163A
公开(公告)日：2007-01-18
申请号：JP2006178011
申请日：2006-06-28
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司
发明人： CHANG CHING-YU , YU DAIKEI , LIN CHIN-HSIANG
IPC分类号： H01L21/027 , G03F7/38
CPC分类号： G03F7/70341
摘要： PROBLEM TO BE SOLVED: To solve problems that a soluble substance from a resist contaminates a liquid immersion fluid and gives uneven heat absorption and evaporation to the resist during baking after exposure, and that CRA later used in a lithography process is limited.
SOLUTION: A method of liquid immersion lithography to a semiconductor substrate is composed of a step of forming a resist layer 14 on the surface of the semiconductor substrate 10, and a step of exposing the resist layer 14 by using a liquid immersion lithography exposure apparatus. The liquid immersion lithography exposure apparatus uses fluid 26 during the exposure process, and can eliminate not all of the fluid 26 but a part of it after exposure. After the exposure, a treatment process is used to eliminate a remaining part 60 of liquid from the resist layer 14. After the treatment process, each of steps of baking after exposure and development are used.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了解决来自抗蚀剂的可溶性物质污染液浸液体的问题，并且在曝光之后的烘烤期间对抗蚀剂产生不均匀的吸热和蒸发，并且后来在光刻工艺中使用的CRA受到限制。解决方案：液体光刻到半导体衬底的方法包括在半导体衬底10的表面上形成抗蚀剂层14的步骤，以及通过使用液浸光刻法曝光抗蚀剂层14的步骤曝光装置液浸光刻曝光装置在曝光过程中使用流体26，并且可以在曝光之后不消除所有的流体26，而是消除其中的一部分。曝光后，使用处理工艺从抗蚀剂层14中除去剩余的液体部分60.在处理过程之后，使用曝光和显影后的每个烘烤步骤。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007142217A Immersion lithography exposure apparatus and its method 审中-公开
标题翻译：倾斜曝光装置及其方法
公开(公告)号：JP2007142217A
公开(公告)日：2007-06-07
申请号：JP2005334838
申请日：2005-11-18
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司
发明人： CHANG CHING-YU , LIN CHIEN-HUNG , LIN CHIN-HSIANG , LU DING-CHUNG , LIN BURN JENG
IPC分类号： H01L21/027 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To provide a megasonic ultrasonic wave immersion lithography apparatus for removing air bubbles from liquid during the process period of lithography exposure by adding sound wave vibrations to immersion liquid, and to provide its method. SOLUTION: An optical system 13 for projecting light onto a wafer 34 through a photomask 14 is included. An optical transmission chamber 18 is made adjacent to the optical system 13, and exposure liquid 32 is loaded. At least one megasonic ultrasonic wave plate 30 is connected in an operable state to the optical transmission chamber 18, sound waves are generated in the exposure liquid 32, and microbubbles in the exposure liquid 32 are removed. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于在光刻曝光的处理周期期间通过向浸液中加入声波振动来从液体中除去气泡的超声波超声波浸没式光刻设备，并提供其方法。解决方案：包括用于通过光掩模14将光投射到晶片34上的光学系统13。光传输室18与光学系统13相邻，并且曝光液体32被装载。至少一个兆声波超声波波片30以可操作的状态连接到光学传输室18，在曝光液体32中产生声波，并且去除曝光液体32中的微泡。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2006005350A Semiconductor device with scattering bar arranged near wires 审中-公开
标题翻译：具有散射条的半导体器件安排在电线附近
公开(公告)号：JP2006005350A
公开(公告)日：2006-01-05
申请号：JP2005172960
申请日：2005-06-13
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司
发明人： CHIN KEIJUN , LIN CHIN-HSIANG , YEN YUNG-SUNG , LAI CHIH-MING
IPC分类号： H01L21/3205 , G03F1/08 , G03F7/00 , H01L21/027 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/76838
摘要： PROBLEM TO BE SOLVED: To provide a method for improving the lithography technology of a semiconductor device 100 comprising a sparse/dense pattern. SOLUTION: This method is for manufacturing the semiconductor device 100 that improves the result of lithography, by arranging scattering bars 108a and 108b on both sides of each wire 106b. The scattering bars 108a and 108b have a width sufficient for improving the depth of focus of the isolated wire 106b during semiconductor device patterning and are arranged at a distance from the isolated wire 106b sufficient to improve the depth of focus of the wire 106b. After the manufacture of the semiconductor device 100 is completed, the scattering bars 108a and 108b are left, as they are. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种改进包括稀疏/致密图案的半导体器件100的光刻技术的方法。解决方案：通过在每根导线106b的两侧布置散射棒108a和108b，该方法用于制造改善光刻结果的半导体器件100。散射棒108a和108b具有足够的宽度，用于在半导体器件图案化期间改善隔离线106b的焦深，并且布置成距离隔离线106b一定距离以足以改善线106b的焦深。在完成半导体器件100的制造之后，散射棒108a和108b原样保持。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2007123882A Device and method for immersion lithography 有权
标题翻译：装置和方法进行静态图像处理
公开(公告)号：JP2007123882A
公开(公告)日：2007-05-17
申请号：JP2006287405
申请日：2006-10-23
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司
发明人： CHANG CHING-YU , LIN CHIN-HSIANG , LIN BURN JENG
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70925 , G03F7/70341
摘要： PROBLEM TO BE SOLVED: To remove contaminations such as particles and water residues from a substrate. SOLUTION: The lithography device includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; and a cleaning module adapted to clean the lithography device. The cleaning module is selected from the group consisting of an ultrasonic unit, a scrubber, a fluid jet, an electrostatic cleaner, and combinations thereof. COPYRIGHT: (C)2007,JPO&INPIT

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