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1. 发明专利

JP2007102220A Top antireflection coating material for immersion watermark reduction 审中-公开
标题翻译：用于浸水降水的顶级抗反射涂层材料
公开(公告)号：JP2007102220A
公开(公告)日：2007-04-19
申请号：JP2006266323
申请日：2006-09-29
申请人： Taiwan Semiconductor Manufacturing Co Ltd , タイワンセミコンダクターマニュファクチャリングカンパニーリミテッド
发明人： CHANG CHING-YU
IPC分类号： G03F7/11 , H01L21/027
CPC分类号： G02B1/111 , G03F7/091 , G03F7/11 , G03F7/2041 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To neutralize a quencher from a resist layer by a coating material to reduce activity and fluidity of the quencher, which significantly reduces the possibility of the quencher in the resist to diffuse into water drops, and thereby, prevents production of a watermark. SOLUTION: A coating material layer 130 contains an acid 134 capable of neutralizing a base quencher 124 from a photo sensitive layer, and a polymer 132 as a carrier of the acid 134 and insoluble in an immersion fluid used in an immersion lithography process. The acid 134 is chemically bonded to the polymer 132. The acid 134 contains an organic acid. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了通过涂层材料中和来自抗蚀剂层的猝灭剂以降低猝灭剂的活性和流动性，这显着降低了抗蚀剂中猝灭剂扩散到水滴中的可能性，从而防止生成水印。解决方案：涂层材料层130含有能够从光敏层中和碱性猝灭剂124的酸性134和作为酸134的载体的聚合物132，并且不溶于浸没式光刻工艺中使用的浸渍液体。酸134与聚合物132化学键合。酸134含有有机酸。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2006148133A Immersion photolithography with megasonic ultrasonic rinse 有权
标题翻译：具有MEGASONIC超声波冲击的平滑光刻技术
公开(公告)号：JP2006148133A
公开(公告)日：2006-06-08
申请号：JP2005337792
申请日：2005-11-22
申请人： Taiwan Semiconductor Manufacturing Co Ltd , タイワンセミコンダクターマニュファクチャリングカンパニーリミテッド
发明人： CHANG CHING-YU
IPC分类号： H01L21/027
CPC分类号： G03F7/2041 , G03F7/168 , H01L21/67051 , H01L21/67057
摘要： PROBLEM TO BE SOLVED: To prevent a photoresist material from being melted into an immersion exposure solution to cause contamination. SOLUTION: A method comprises steps for forming a photoresist on a substrate, rinsing the photoresist using a rinse liquid agitated by at least one megasonic ultrasonic source, exposing the photoresist to radiation while being immersed in liquid, and developing the photoresist. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了防止光致抗蚀剂材料熔化成浸没曝光溶液以引起污染。解决方案：一种方法包括在衬底上形成光致抗蚀剂的步骤，用至少一个兆声波超声波源搅拌的冲洗液冲洗光致抗蚀剂，在浸没在液体中时使光致抗蚀剂暴露于辐射，并显影光致抗蚀剂。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2007165852A Method and system for immersion lithography 有权
标题翻译：方法和系统的渗透层析
公开(公告)号：JP2007165852A
公开(公告)日：2007-06-28
申请号：JP2006280557
申请日：2006-10-13
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾セミコンダクターマニュファクチャリングカンパニーリミテッドTaiwan Semiconductor Manufacturing Co., Ltd.
发明人： CHANG CHING-YU , LIN CHIN-HSIANG , LIN BURN JENG , LU DING CHUNG
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/2041 , G03F7/70341 , G03F7/70941
摘要： PROBLEM TO BE SOLVED: To provide a method and a system for immersion lithography by which static electricity accumulated in an exposure step is effectively removed by using a conductive fluid as an immersion liquid. SOLUTION: This method for immersion lithography includes a step for preparing a substrate 110 coated with a resist layer 120, a step for charging a conductive immersion liquid 150 between the substrate 110 and an objective lens of a lithography system 100, and a step for irradiating the resist layer 120 by using a radiation energy through the objective lens and the conductive immersion liquid 150. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于浸没光刻的方法和系统，通过使用导电流体作为浸没液体，可以有效地去除曝光步骤中积聚的静电。解决方案：浸渍光刻方法包括制备涂覆有抗蚀剂层120的基板110的步骤，用于在基板110和光刻系统100的物镜之间填充导电浸没液体150的步骤，以及通过使用辐射能量通过物镜和导电浸渍液体150照射抗蚀剂层120的步骤。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2007102180A Immersion lithography that prevents occurrence of water mark 审中-公开
标题翻译：防止水标记发生的倾斜图
公开(公告)号：JP2007102180A
公开(公告)日：2007-04-19
申请号：JP2006186926
申请日：2006-07-06
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾セミコンダクターマニュファクチャリングカンパニーリミテッドTaiwan Semiconductor Manufacturing Co., Ltd.
发明人： CHANG CHING-YU
IPC分类号： G03F7/004 , G03F7/039 , G03F7/38 , H01L21/027
CPC分类号： G03F7/2041 , G03F7/004 , G03F7/0045 , G03F7/0392
摘要： PROBLEM TO BE SOLVED: To provide a resist material for use in immersion lithography that prevents or reduces damage due to water mark defects and an immersion lithography method. SOLUTION: The resist material includes a polymer that turns soluble in an alkaline solution after reaction with acid, a PAG that decomposes to form acid after absorption of radiation energy, and a quencher capable of neutralizing acid and having a reduced mobility, wherein the quencher has a concentration in the resist higher than 0.5 wt.%. The immersion lithography method includes: a step of forming a resist on a substrate; a step of exposing the resist in a fluid in an immersion lithography system; a step of baking the resist so that the amount of the fluid that diffuses the quencher in the resist in immersion lithography is confined to 5×10 -13 mol/cm 2 ; and a step of developing the exposed resist. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供用于浸没式光刻中的抗蚀剂材料，其防止或减少由于水痕缺陷引起的损伤和浸没式光刻方法。抗蚀剂材料包括在与酸反应后变成可溶于碱性溶液的聚合物，在吸收辐射能后分解形成酸的PAG和能够中和酸并具有降低的迁移率的猝灭剂，其中猝灭剂的抗蚀剂浓度高于0.5重量％。浸渍光刻方法包括：在基板上形成抗蚀剂的步骤; 在浸没式光刻系统中将流体中的抗蚀剂曝光的步骤; 将抗蚀剂烘烤的步骤使得浸没式光刻中的抗蚀剂中的猝灭剂扩散的流体的量被限制为5×10 -6 / SP 2 mol / cm 2。以及显影抗蚀剂的步骤。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2008118102A Liquid immersion lithography apparatus, liquid immersion lithography method and liquid immersion lithography apparatus 有权
标题翻译：液体沉降计算装置，液体沉降计算方法和液体沉降计算装置
公开(公告)号：JP2008118102A
公开(公告)日：2008-05-22
申请号：JP2007198042
申请日：2007-07-30
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司
发明人： LIN BURN JENG , CHANG CHING-YU
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03B27/52 , G03F7/70341
摘要： PROBLEM TO BE SOLVED: To provide a liquid immersion lithography apparatus having high throughput by preventing the contamination of a wafer and an error of overlay due to foreign matters or liquid spot. SOLUTION: The apparatus has a lens assembly having an image forming lens, and a wafer stage. The wafer stage holds a wafer below the lens assembly and has a seal ring for sealing a step difference between a wafer edge of the lower side of the wafer held in the wafer stage and the wafer stage. The apparatus is also provided with: a liquid tank disposed for reserving an immersion liquid so as to immerse the entire wafer held in the wafer stage in the immersion liquid; a cover disposed so as to cover at least part of the liquid tank in order to control a temperature of the environment in the liquid tank and ensure sufficient liquid quantity; and at least a flow rate direction control liquid intake port for directing the immersion liquid to the edge of the wafer held in the wafer stage nearest to the image-forming lens and surrounding the image-forming lens. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过防止晶片的污染和由异物或液体斑点引起的覆盖错误，提供具有高生产率的液浸式光刻设备。解决方案：该装置具有具有成像透镜和晶片台的透镜组件。晶片台将透镜组件下方的晶片保持在晶片台上，并且具有密封环，用于密封保持在晶片台的晶片的下侧的晶片边缘与晶片台之间的阶梯差。该设备还设有：储存浸液的液罐，以将保持在晶片台上的整个晶片浸入浸液中; 为了控制液罐中的环境温度并确保足够的液体量而设置为覆盖至少部分液体罐的盖; 以及至少一个流量方向控制液体吸入口，用于将浸没液体引导到保持在最靠近图像形成透镜的晶片台中的晶片的边缘并且围绕图像形成透镜。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007013162A Method of treating semiconductor wafer, semiconductor wafer, method of executing liquid immersion lithography, and edge bead eliminating device used together with liquid immersion lithography processing 有权
标题翻译：处理半导体波形的方法，半导体波形，液体渗透层析法的执行方法以及使用液相沉积处理的边缘消除装置
公开(公告)号：JP2007013162A
公开(公告)日：2007-01-18
申请号：JP2006178007
申请日：2006-06-28
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司
发明人： CHANG CHING-YU , KA KENSHU , YU DAIKEI
IPC分类号： H01L21/027 , G03F7/38
CPC分类号： G03F7/2041 , G03F7/162 , G03F7/168 , G03F7/70341 , H01L21/67051 , H01L21/6708 , H01L21/6715
摘要： PROBLEM TO BE SOLVED: To provide liquid immersion lithography treatment for reducing contamination on a liquid immersion fluid and a lens, and reducing a defect on a wafer.
SOLUTION: A method of executing liquid immersion lithography on a semiconductor wafer is provided. This method has a process of providing a resist layer on the surface of the semiconductor wafer. Next, the wafer is rotated at a speed higher than 1,000 rotations per minute by edge bead eliminating treatment, and a solvent is supplied through a nozzle during the rotation of the wafer. Next, a liquid immersion lithography apparatus is used to expose the resist layer.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供液浸光刻处理以减少浸液和透镜上的污染，并减少晶片上的缺陷。提供了一种在半导体晶片上执行液浸光刻的方法。该方法具有在半导体晶片的表面上设置抗蚀剂层的工艺。接下来，通过边缘珠除去处理，晶片以高于1000转/分钟的速度旋转，并且在晶片旋转期间通过喷嘴供应溶剂。接下来，使用液浸光刻装置使抗蚀剂层露出。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2008077052A Photoresist capable of phase conversion of surface 有权
标题翻译：表面相变的光电子能力
公开(公告)号：JP2008077052A
公开(公告)日：2008-04-03
申请号：JP2007146915
申请日：2007-06-01
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司
发明人： CHANG CHING-YU , CHIU CHIH-CHENG
IPC分类号： G03F7/039 , G03F7/004 , G03F7/38 , H01L21/027
CPC分类号： G03F7/2041 , G03F7/0382 , G03F7/0392 , G03F7/168
摘要： PROBLEM TO BE SOLVED: To provide a photoresist capable of phase conversion of a surface by which occurrence of defects on a semiconductor substrate is prevented.
SOLUTION: The photoresist includes a photosensitive polymer which becomes soluble in an alkali solution by reaction with an acid and at least one of an alkali-soluble polymer, an acid-soluble polymer and an acid-dissociable polymer. The alkali-soluble polymer becomes water-soluble by reaction with an alkaline developer. The acid-soluble polymer becomes water-soluble by reaction with an acidic developer. The acid-dissociable polymer becomes water-soluble after eliminating a leaving group by reaction with an acid.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止在半导体衬底上出现缺陷的表面相变的光致抗蚀剂。解决方案：光致抗蚀剂包括通过与酸和碱溶性聚合物，酸溶性聚合物和酸解离聚合物中的至少一种反应而溶于碱溶液的光敏聚合物。碱溶性聚合物通过与碱性显影剂反应而变成水溶性。酸溶性聚合物通过与酸性显影剂反应而变成水溶性。通过与酸反应除去离去基团后，酸解离的聚合物变成水溶性的。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007142217A Immersion lithography exposure apparatus and its method 审中-公开
标题翻译：倾斜曝光装置及其方法
公开(公告)号：JP2007142217A
公开(公告)日：2007-06-07
申请号：JP2005334838
申请日：2005-11-18
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司
发明人： CHANG CHING-YU , LIN CHIEN-HUNG , LIN CHIN-HSIANG , LU DING-CHUNG , LIN BURN JENG
IPC分类号： H01L21/027 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To provide a megasonic ultrasonic wave immersion lithography apparatus for removing air bubbles from liquid during the process period of lithography exposure by adding sound wave vibrations to immersion liquid, and to provide its method. SOLUTION: An optical system 13 for projecting light onto a wafer 34 through a photomask 14 is included. An optical transmission chamber 18 is made adjacent to the optical system 13, and exposure liquid 32 is loaded. At least one megasonic ultrasonic wave plate 30 is connected in an operable state to the optical transmission chamber 18, sound waves are generated in the exposure liquid 32, and microbubbles in the exposure liquid 32 are removed. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于在光刻曝光的处理周期期间通过向浸液中加入声波振动来从液体中除去气泡的超声波超声波浸没式光刻设备，并提供其方法。解决方案：包括用于通过光掩模14将光投射到晶片34上的光学系统13。光传输室18与光学系统13相邻，并且曝光液体32被装载。至少一个兆声波超声波波片30以可操作的状态连接到光学传输室18，在曝光液体32中产生声波，并且去除曝光液体32中的微泡。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2007013161A Liquid immersion lithography executing method, liquid immersion lithography system and liquid immersion lithography executing apparatus 审中-公开
标题翻译：液体渗透光刻法执行方法，液相沉降系统和液体沉降光刻机执行装置
公开(公告)号：JP2007013161A
公开(公告)日：2007-01-18
申请号：JP2006177947
申请日：2006-06-28
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司
发明人： CHANG CHING-YU , LIN BURN JENG
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70925 , G03F7/70341 , G03F7/70916
摘要： PROBLEM TO BE SOLVED: To provide a method and a system for suppressing defect formation in liquid immersion lithography. SOLUTION: The liquid immersion lithography system has a liquid immersion fluid holder for housing a liquid immersion fluid. The system further has a stage for positioning a semiconductor wafer coated with a resist on the liquid immersion fluid holder, and a lens provided near the liquid immersion fluid holder and capable of being positioned to project an image on the semiconductor wafer coated with the resist through the liquid immersion fluid 126. The liquid immersion fluid holder has a coating film configured so as to reduce the adhesiveness of a contaminant caused by a contaminant in the liquid immersion fluid. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种抑制液浸光刻中的缺陷形成的方法和系统。解决方案：液浸式光刻系统具有用于容纳液浸液体的浸液流体保持器。该系统还具有用于将涂覆有抗蚀剂的半导体晶片定位在液浸流体保持器上的阶段，以及设置在液浸流体保持器附近的透镜，并且能够定位成将涂覆有抗蚀剂的半导体晶片上的图像投影浸液流体126.液浸流体保持器具有涂膜，其被构造成降低由液浸流体中的污染物引起的污染物的粘附性。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2008118114A Liquid immersion lithography apparatus and liquid immersion lithography method 有权
标题翻译：液体沉降计算机和液体渗透算法
公开(公告)号：JP2008118114A
公开(公告)日：2008-05-22
申请号：JP2007245245
申请日：2007-09-21
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司
发明人： LIN BURN JENG , CHANG CHING-YU
IPC分类号： H01L21/027 , G03F7/20 , H01L21/683
CPC分类号： G03F7/70866 , G03F7/70341
摘要： PROBLEM TO BE SOLVED: To provide a liquid immersion lithography apparatus for preventing the contamination of a wafer and an overlay error due to foreign matters or liquid spot. SOLUTION: The liquid immersion lithographic system includes a lens assembly having an image-forming lens and a wafer stage for holding the wafer below the lens assembly. The wafer stage comprises a seal ring disposed on a seal ring frame along the upper end of the wafer held in the wafer stage, and the seal ring seals a gap between the wafer edge and the wafer stage. In order to keep the immersion liquid, the system further has a liquid tank disposed on the wafer stage so that the entire wafer held on the wafer stage of the immersion liquid can be completely immersed, and a cover disposed so as to cover at least part of the liquid tank for supplying temperature control so that the inside of the liquid tank can have an environment abundant in the immersion liquid. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于防止晶片污染的液浸式光刻设备和由于异物或液体斑点引起的覆盖误差。解决方案：液浸式光刻系统包括具有图像形成透镜和用于将晶片保持在透镜组件下方的晶片台的透镜组件。晶片台包括沿着保持在晶片台中的晶片的上端设置在密封环框架上的密封环，并且密封环密封晶片边缘和晶片台之间的间隙。为了保持浸没液体，系统还具有设置在晶片台上的液体槽，使得保持在浸没液体的晶片台上的整个晶片可以完全浸没，并且设置为覆盖至少部分的盖用于提供温度控制的液体罐，使得液体罐的内部可以具有浸入液体中的丰富的环境。版权所有（C）2008，JPO＆INPIT

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