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1. 发明申请

US20130177701A1 CAPACITOR MANUFACTURING METHOD 审中-公开
标题翻译：电容器制造方法
公开(公告)号：US20130177701A1
公开(公告)日：2013-07-11
申请号：US13772898
申请日：2013-02-21
申请人： Tailu NING , Hironao FUJIKI , Kazuyoshi YOSHIDA , Michiko SHINGAI
发明人： Tailu NING , Hironao FUJIKI , Kazuyoshi YOSHIDA , Michiko SHINGAI
IPC分类号： H01G9/00
CPC分类号： H01G9/0036 , H01G9/028 , H01G9/15
摘要： A capacitor manufacturing method that enables a capacitor having a high withstand voltage, a high electrostatic capacitance and a satisfactorily small ESR to be manufactured simply and at a high level of productivity. In the capacitor manufacturing method, a film-formation treatment of applying a conductive polymer solution containing a π-conjugated conductive polymer, a polyanion and a solvent to the dielectric layer side of a capacitor substrate having a dielectric layer formed on the surface of an anode, and then performing drying to form a conductive polymer film, is performed at least twice, and the conductive polymer solution used in at least one film-formation treatment among the second film-formation treatment and subsequent film-formation treatments is a high viscosity solution having a higher viscosity than the conductive polymer solution used in the first film-formation treatment.
摘要翻译：能够简单且高生产率地制造具有高耐压，高静电电容和令人满意的小ESR的电容器的电容器制造方法。在电容器制造方法中，在具有形成在阳极表面上的电介质层的电容器基板的电介质层侧上涂敷含有π共轭导电性聚合物，聚阴离子和溶剂的导电性聚合物溶液的成膜处理，然后进行干燥以形成导电聚合物膜，进行至少两次，并且在第二成膜处理和随后的成膜处理中用于至少一个成膜处理的导电聚合物溶液是高粘度溶液具有比在第一成膜处理中使用的导电聚合物溶液更高的粘度。

2. 发明申请

US20110033651A1 CONDUCTIVE COMPOSITION AND PRODUCTION METHOD THEREOF, ANTISTATIC COATING MATERIAL, ANTISTATIC COATING, ANTISTATIC FILM, OPTICAL FILTER, AND OPTICAL INFORMATION RECORDING MEDIUM, AND CAPACITORS AND PRODUCTION METHOD THEREOF 有权
标题翻译：导电组合物及其制造方法，防静电涂料，防静电涂料，防静电膜，光学滤膜和光信息记录介质，以及电容器及其生产方法
公开(公告)号：US20110033651A1
公开(公告)日：2011-02-10
申请号：US12909435
申请日：2010-10-21
申请人： Kazuyoshi YOSHIDA , Tailu NING , Yasushi MASAHIRO , Rika ABE , Yutaka HIGUCHI
发明人： Kazuyoshi YOSHIDA , Tailu NING , Yasushi MASAHIRO , Rika ABE , Yutaka HIGUCHI
IPC分类号： B32B3/02 , H01B1/12
CPC分类号： H01G9/0425 , C08L65/00 , C09D165/00 , H01B1/127 , H01G9/028 , H01G11/48 , H01G11/52 , H01G11/56 , Y02E60/13 , C08L2666/02
摘要： A conductive composition comprises a π conjugated conductive polymer, a polyanion, and a hydroxy group-containing aromatic compound containing two or more hydroxy groups. An antistatic coating material comprises the conductive composition and a solvent. An antistatic coating is produced by applying the antistatic coating material. A capacitor comprises an anode composed of a porous valve metal body; a dielectric layer formed by oxidizing a surface of the anode; and a cathode formed on the dielectric layer, wherein the cathode has a solid electrolyte layer comprising the conductive composition.
摘要翻译：导电组合物包括共轭导电性聚合物，聚阴离子和含有两个以上羟基的含羟基的芳香族化合物。抗静电涂层材料包括导电组合物和溶剂。通过施加抗静电涂层材料制成抗静电涂层。电容器包括由多孔阀金属体构成的阳极; 通过氧化阳极表面形成的电介质层; 以及形成在所述电介质层上的阴极，其中所述阴极具有包含所述导电组合物的固体电解质层。

3. 发明申请

US20100294997A1 METHOD FOR PRODUCING CONDUCTIVE POLYMER SOLUTION 有权
标题翻译：生产导电聚合物溶液的方法
公开(公告)号：US20100294997A1
公开(公告)日：2010-11-25
申请号：US12848452
申请日：2010-08-02
申请人： Kazuyoshi YOSHIDA , Sou MATSUBAYASHI
发明人： Kazuyoshi YOSHIDA , Sou MATSUBAYASHI
IPC分类号： H01B1/12
CPC分类号： H01B1/127 , H01B1/122
摘要： There is provided a method for producing a conductive polymer solution comprising: a freeze-drying step in which an aqueous conductive polymer solution containing a complex that includes a π-conjugated conductive polymer and a polyanion is freeze dried to thereby obtain a solid complex; and a dispersion step in which an organic solvent having a water content of 4% by mass or less and an amine compound are mixed to the solid complex, followed by a dispersion treatment.
摘要翻译：提供一种导电性高分子溶液的制造方法，其特征在于，包括冷冻干燥工序，将含有共轭系导电性聚合物和聚阴离子的配合物的导电性聚合物水溶液冷冻干燥，得到固体络合物; 和其中水含量为4质量％以下的有机溶剂和胺化合物混合到固体络合物中的分散步骤，然后进行分散处理。

4. 发明申请

US20090328082A1 PANEL ATTACHMENT STRUCTURE FOR DISK TRAY 失效
标题翻译：面板托盘结构
公开(公告)号：US20090328082A1
公开(公告)日：2009-12-31
申请号：US12431104
申请日：2009-04-28
申请人： Kazuyoshi YOSHIDA
发明人： Kazuyoshi YOSHIDA
IPC分类号： G11B17/04
CPC分类号： G11B17/0405 , G11B17/056 , G11B33/027
摘要： A panel attachment structure for a disk tray includes an attachment frame, a decoration panel, a spring body, a restricting mechanism and a positioning mechanism. The attachment frame is non-movably coupled to a front end portion of the disk tray. The disk tray is movable between an ejected position and a retracted position through a tray opening of a cabinet. The decoration panel is movably coupled to the attachment frame. The spring body includes a compression coil spring. The spring body elastically couples the decoration panel to the attachment frame and biases the decoration panel against the attachment frame. The restricting mechanism restricts displacement of the decoration panel relative to the attachment frame. The positioning mechanism selectively positions the decoration panel relative to the attachment frame in a predetermined position and releases the decoration panel from the predetermined position when the disk tray is retracted to the retracted position.
摘要翻译：用于盘托盘的面板附接结构包括附接框架，装饰面板，弹簧体，限制机构和定位机构。附接框架不可移动地联接到盘托盘的前端部分。盘托盘可以通过机柜的托盘开口在弹出位置和缩回位置之间移动。装饰面板可移动地联接到附接框架。弹簧体包括压缩螺旋弹簧。弹簧体将装饰面板弹性地连接到附件框架，并将装饰面板偏压在附接框架上。限制机构限制装饰面板相对于附接框架的位移。定位机构将装饰面板相对于附接框架选择性地定位在预定位置，并且当盘托架缩回到缩回位置时，将装饰面板从预定位置释放。

5. 发明申请

US20090047779A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090047779A1
公开(公告)日：2009-02-19
申请号：US12192349
申请日：2008-08-15
申请人： Kazuyoshi YOSHIDA
发明人： Kazuyoshi YOSHIDA
IPC分类号： H01L21/4763
CPC分类号： H01L21/76814 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/76805
摘要： A method for manufacturing a semiconductor device, including: forming a first conductive layer on a first insulating film; forming a second insulating film so as to cover the first conductive layer; forming a resist mask on the second insulating film; forming a hole reaching the first conductive layer in the second insulating film by means of first dry etching using the resist mask; removing the resist mask; removing the first conductive layer exposed at the bottom of the hole by means of second dry etching, so that the hole reaches the first insulating film and the first conductive layer exposes at a side surface within the hole; forming a conductive plug in contact with the first conductive layer exposed at the side surface within the hole by burying a conductive material in the hole; and forming a second conductive layer to be connected to the conductive plug on the second insulating film.
摘要翻译：一种制造半导体器件的方法，包括：在第一绝缘膜上形成第一导电层; 形成第二绝缘膜以覆盖第一导电层; 在所述第二绝缘膜上形成抗蚀剂掩模; 通过使用抗蚀剂掩模的第一干蚀刻形成到达第二绝缘膜中的第一导电层的孔; 去除抗蚀剂掩模; 通过第二干蚀刻去除在孔底部露出的第一导电层，使得孔到达第一绝缘膜，并且第一导电层在孔内的侧表面暴露; 通过在孔中埋入导电材料形成与在孔内的侧表面暴露的第一导电层接触的导电插塞; 以及形成与所述第二绝缘膜上的所述导电插塞连接的第二导电层。

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