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1. 发明专利

JP2008239358A Fitted body and its manufacturing method 审中-公开
标题翻译：适用身体及其制造方法
公开(公告)号：JP2008239358A
公开(公告)日：2008-10-09
申请号：JP2007078065
申请日：2007-03-26
申请人： Nihon Ceratec Co Ltd , Taiheiyo Cement Corp , 太平洋セメント株式会社 , 株式会社日本セラテック
发明人： ISHII MAMORU , UMETSU MOTOHIRO , OGURA TOMOYUKI , SHIOGAI TATSUYA , IGUCHI MASAHITO , KATAOKA MASAKO , KIKUCHI SHINYA
IPC分类号： C04B37/02
摘要： PROBLEM TO BE SOLVED: To provide a fitted body wherein a ceramic member is fitted into a concave part of a metal-ceramic composite member without any gap and the ceramic member is crackless, and its manufacturing method.
SOLUTION: The method for manufacturing the fitted body contains a concave part-forming process wherein the concave part is formed on a preform made of a ceramic reinforced material, a fitting process wherein a ceramic member is fitted into the concave part, a process for filling a ceramic reinforced material powder into the gap between the preform and the ceramic member, and an infiltration process wherein pores of the preform and gaps of the filled ceramic reinforced material powder are infiltrated with a molten metal under pressure.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种嵌合体，其中将陶瓷构件嵌入金属 - 陶瓷复合构件的凹部而没有任何间隙，并且陶瓷构件是无裂纹的及其制造方法。解决方案：制造装配体的方法包括凹部形成工艺，其中凹部形成在由陶瓷增强材料制成的预成型件上，其中陶瓷构件装配到凹部中的配合工艺，用于将陶瓷增强材料粉末填充到预成型件和陶瓷构件之间的间隙中的过程，以及渗透方法，其中预制件的孔和填充的陶瓷增强材料粉末的间隙在压力下被熔融金属渗透。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2010202896A Sputtering target and production method of the same 有权
标题翻译：溅射目标及其生产方法
公开(公告)号：JP2010202896A
公开(公告)日：2010-09-16
申请号：JP2009047035
申请日：2009-02-27
申请人： Nihon Ceratec Co Ltd , Taiheiyo Cement Corp , 太平洋セメント株式会社 , 株式会社日本セラテック
发明人： SAITO NORIKO , OGURA TOMOYUKI , MIYATA NOBORU , IGUCHI MASAHITO , ICHIKAWA YOSHITAKA
IPC分类号： C23C14/34 , C04B35/00 , C04B35/453 , C22C29/12 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target allowing uniform formation of a film and hardly causing abnormal discharge. SOLUTION: The sputtering target comprises a zinc oxide sintered compact, containing Ga by 0.03 to 0.75 atom% and no compound oxide detected by X-ray diffraction. The target contains one or more of Zr, Si and Al by 100 atom ppm or lower in total. The surface of the zinc oxide sintered compact shows a color difference ΔE*ab of 0.7 or less. The sputtering target is sintered under the condition that no compound oxide is detected by X-ray diffraction. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够均匀地形成膜并且几乎不引起异常放电的溅射靶。解决方案：溅射靶包含含有0.03-0.75原子％的Ga的氧化锌烧结体，并且不通过X射线衍射检测到复合氧化物。目标含有Zr，Si和Al中的一种或多种，总计为100原子ppm以下。氧化锌烧结体的表面的色差ΔE* ab为0.7以下。溅射靶在X射线衍射法检测不到复合氧化物的条件下进行烧结。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2013063907A METHOD FOR PRODUCING ZnO SINTERED COMPACT 有权
标题翻译：生产ZnO烧结复合材料的方法
公开(公告)号：JP2013063907A
公开(公告)日：2013-04-11
申请号：JP2012256664
申请日：2012-11-22
申请人： Taiheiyo Cement Corp , 太平洋セメント株式会社 , Nihon Ceratec Co Ltd , 株式会社日本セラテック
发明人： MIYATA NOBORU , OGURA TOMOYUKI , SAITO NORIKO , IGUCHI MASAHITO , ICHIKAWA YOSHITAKA
IPC分类号： C04B35/453 , C23C14/08 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a ZnO sintered compact for forming a transparent conductive film which is excellent in the uniformity of film characteristics.SOLUTION: The ZnO sintered compact is produced by the method including: a step for obtaining ZnBOpowders by mixing ZnO powders with BOpowders, firing and pulverizing; and a step for obtaining the ZnO sintered compact by mixing the ZnO powders having an average particle diameter of 0.5-1 μm with the ZnBOpowders having an average particle diameter of 0.2-0.5 μm, molding and firing.
摘要翻译：解决的问题：提供一种制造薄膜特性均匀性优异的透明导电膜形成用ZnO烧结体的方法。解决方案：ZnO烧结体通过以下方法制造：包括以下步骤：获得Zn 4 通过将ZnO粉末与B 3 O 3 / SB SB粉末进行混合，焙烧和粉碎以及通过将平均粒径为0.5-1μm的ZnO粉末与Zn 4 6混合得到ZnO烧结体的步骤具有平均粒径为0.2-0.5μm的粉末，成型和烧制。 O 13 版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012184493A Metal-ceramic composite material and method for producing the same 有权
标题翻译：金属陶瓷复合材料及其制造方法
公开(公告)号：JP2012184493A
公开(公告)日：2012-09-27
申请号：JP2011050171
申请日：2011-03-08
申请人： Taiheiyo Cement Corp , Nihon Ceratec Co Ltd , 太平洋セメント株式会社 , 株式会社日本セラテック
发明人： SUEMATSU RYOICHI , HIKITA TOMOYUKI , ISHII MAMORU , ARIMATSU HIDEAKI , IGUCHI MASAHITO
IPC分类号： C22C1/10 , C04B41/88
摘要： PROBLEM TO BE SOLVED: To provide a metal-ceramic composite material in which the filling ratio of a ceramic is low and uniform, and to provide a method for producing the same.SOLUTION: The metal-ceramic composite material is produced by molding a mixture, obtained by adding a metal powder of any of Si, Al and Cu to a ceramic powder of any of SiC, AlOand SiNand an organic binder, to obtain a molding, then sintering the molding to obtain a porous sintered compact, and impregnating the porous sintered compact with the same kind of metal as the metal powder.
摘要翻译：解决的问题：提供陶瓷的填充率低且均匀的金属 - 陶瓷复合材料，并提供其制造方法。解决方案：金属陶瓷复合材料通过将通过将Si，Al和Cu中的任一种的金属粉末加入到SiC，Al O 3 和Si 3 N 4 有机粘合剂，得到成型体，然后烧结成型物，得到多孔质烧结体，并用与金属粉末相同种类的金属浸渍多孔烧结体。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012153592A Method for producing zinc oxide sintered compact 审中-公开
标题翻译：生产氧化锌烧结的方法
公开(公告)号：JP2012153592A
公开(公告)日：2012-08-16
申请号：JP2011016621
申请日：2011-01-28
申请人： Nihon Ceratec Co Ltd , Taiheiyo Cement Corp , 太平洋セメント株式会社 , 株式会社日本セラテック
发明人： ISHIDA HIRONORI , OGURA TOMOYUKI , IGUCHI MASAHITO , FUKAZAWA KENICHI
IPC分类号： C04B35/453 , C04B35/64 , C23C14/34 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a zinc oxide-containing sintered compact, by which local upward warp is reduced or eliminated.SOLUTION: A shield 4 comprising alumina, magnesia, zirconia or the like is disposed between a compact 2 placed on a setter 3 and each of right and left heaters 1. The distance d between the compact 2 and the shield 4 is preferably adjusted to ≥10 mm.
摘要翻译：待解决的问题：提供一种生产含氧化锌的烧结体的方法，由此减小或消除局部向上翘曲。解决方案：包括氧化铝，氧化镁，氧化锆等的护罩4设置在放置在固定器3上的压块2和右和左加热器1之间。压块2和屏蔽件4之间的距离d优选为调整至≥10mm。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012116718A Igzo sintered compact and method for producing the same 有权
标题翻译： IGZO烧结紧凑型及其制造方法
公开(公告)号：JP2012116718A
公开(公告)日：2012-06-21
申请号：JP2010269204
申请日：2010-12-02
申请人： Nihon Ceratec Co Ltd , Taiheiyo Cement Corp , Toyoshima Seisakusho:Kk , 太平洋セメント株式会社 , 株式会社日本セラテック , 株式会社豊島製作所
发明人： MIYATA NOBORU , ISHIDA HIRONORI , FUKAZAWA KENICHI , IGUCHI MASAHITO , ASANO YASUAKI
IPC分类号： C04B35/00 , C04B35/64 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide an IGZO sintered compact having a minimal amount of a degenerated surface layer caused by firing.SOLUTION: The IGZO sintered compact is produced by molding a mixture of powders of indium oxide, gallium oxide and zinc oxide and firing the molding obtained. The firing is conducted by placing the molding in a container which is closed except a specific opening. Further, the firing is made by spreading the zinc oxide powder in the container. This procedure makes the thickness of a degenerated surface layer, which contains InGaZnOand is formed on the surface upon firing, not greater than 1 mm.
摘要翻译：待解决的问题：提供一种具有由焙烧引起的最小量的退化表面层的IGZO烧结体。解决方案：IGZO烧结体通过模制氧化铟，氧化镓和氧化锌粉末的混合物并焙烧得到的模塑制造。通过将模制件放置在特定开口之外的封闭容器中来进行烧制。此外，通过将氧化锌粉末铺展在容器中来进行烧制。该过程使得包含In 2 Zn 2的退化表面层的厚度 1 O 7 ，并且在烧制时在表面上形成不大于1mm。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011225981A Sputtering target 有权
标题翻译：飞溅目标
公开(公告)号：JP2011225981A
公开(公告)日：2011-11-10
申请号：JP2011068238
申请日：2011-03-25
申请人： Nihon Ceratec Co Ltd , Taiheiyo Cement Corp , 太平洋セメント株式会社 , 株式会社日本セラテック
发明人： ISHIDA HIRONORI , MIYATA NOBORU , IGUCHI MASAHITO , SHIMOJIMA HIROMASA , ICHIKAWA YOSHITAKA
IPC分类号： C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target capable of suppressing the occurrence of arcing while achieving an increase in thickness.SOLUTION: An inclined plane 14 is formed in a target material 10, which gradually makes the diameter of the target material 10 smaller or its width smaller from the middle of the side face 13 of the target material toward the rear surface 12. The target material 10 is formed so that plots in the Ra-h plane representing the combination of surface roughness of a ridgeline part 15 forming a boundary of the side face 13 and the inclined plane 14, and a height h based on the rear surface 12 are included in the first range S1 or the second range S2 which is part of the first range S1.
摘要翻译：要解决的问题：提供能够抑制电弧放电的发生同时实现厚度增加的溅射靶。解决方案：在目标材料10中形成倾斜平面14，其逐渐地使目标材料10的直径从目标材料的侧面13的中部朝向后表面12更小或更小。目标材料10形成为在Ra-h平面中绘制表示形成侧面13和倾斜面14的边界的棱线部15的表面粗糙度的组合以及基于后表面12的高度h 被包括在作为第一范围S1的一部分的第一范围S1或第二范围S2中。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2011179055A Sputtering target 有权
标题翻译：飞溅目标
公开(公告)号：JP2011179055A
公开(公告)日：2011-09-15
申请号：JP2010043109
申请日：2010-02-26
申请人： Nihon Ceratec Co Ltd , Taiheiyo Cement Corp , 太平洋セメント株式会社 , 株式会社日本セラテック
发明人： ISHIDA HIRONORI , MIYATA NOBORU , IGUCHI MASAHITO , SHIMOJIMA HIROMASA , FUKAZAWA KENICHI
IPC分类号： C23C14/34 , C04B35/453
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target which allows to stably form a film and hardly causes cracks or arcing. SOLUTION: The sputtering target comprises a zinc oxide sintered body having a relative density of ≤99%, wherein a lightness difference ΔL* within the plane of the major face 11a to be exposed to a sputtering atmosphere is ≤5. The target has an average particle diameter of ≤15 μm, and the maximum height Rz of the major face 11a is not more than a half of the average particle diameter. The target comprises a zinc oxide sintered body prepared by sintering a CIP compact which is shaped by removing a portion at least 10 mm inside the couture of the green compact as a green machining margin. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供允许稳定地形成膜并且几乎不引起裂纹或电弧的溅射靶。解决方案：溅射靶包括相对密度为≤99％的氧化锌烧结体，其中暴露于溅射气氛的主面11a的平面内的亮度差ΔL*≤5。靶的平均粒径≤15μm，主面11a的最大高度Rz不大于平均粒径的一半。目标包括通过烧结CIP压块制备的氧化锌烧结体，该CIP压块通过去除作为绿色加工余量的生坯的缝合线内的至少10mm的部分而成形。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010222176A ZnO SINTERED COMPACT AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译： ZnO烧结紧凑型及其制造方法
公开(公告)号：JP2010222176A
公开(公告)日：2010-10-07
申请号：JP2009070918
申请日：2009-03-23
申请人： Nihon Ceratec Co Ltd , Taiheiyo Cement Corp , 太平洋セメント株式会社 , 株式会社日本セラテック
发明人： MIYATA NOBORU , OGURA TOMOYUKI , SAITO NORIKO , IGUCHI MASAHITO , ICHIKAWA YOSHITAKA
IPC分类号： C04B35/453 , H01B1/08
摘要： PROBLEM TO BE SOLVED: To provide a ZnO sintered compact for forming a transparent conductive film which is less in the variation of film resistance and is excellent in the uniformity of film characteristics. SOLUTION: In the ZnO sintered compact, the content of B is 0.01-3.0 mol% expressed in terms of B 2 O 3 and the average crystal particle diameter of the ZnO particle constituting the sintered compact is 2-10 μm, and the B source is Zn 4 B 6 O 13 . The ZnO sintered compact is produced by the method including: a step of obtaining Zn 4 B 6 O 13 powder by mixing ZnO powder with B 2 O 3 powder and firing and pulverizing; and a step of obtaining the ZnO sintered compact by mixing ZnO powder having 0.5-1 μm average particle diameter with Zn 4 B 6 O 13 powder having 0.2-0.5 μm average particle diameter and molding and firing. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种用于形成薄膜电阻变化小的透明导电膜的ZnO烧结体，并且膜特性的均匀性优异。解决方案：在ZnO烧结体中，B的含量为0.01-3.0摩尔％，以B 2 3 表示，平均结晶粒径构成烧结体的ZnO粒子为2-10μm，B源为Zn S S 13 。通过以下方法制造ZnO烧结体，该方法包括：通过将ZnO粉末与B 13 粉末混合，获得ZnS / SB＆gt; 2＆lt; SB＆gt; 3＆lt; 3＆gt;粉末并烧制和粉碎; 以及通过将具有0.5-1μm平均粒径的ZnO粉末与Zn 4 SB 13S 粉末混合来获得ZnO烧结体的步骤具有0.2-0.5μm平均粒径并成型和烧制。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2009179517A Ceramic joined body for gas jetting port and gas distribution plate, and method of manufacturing the same 审中-公开
标题翻译：用于气体喷射口和气体分配板的陶瓷接合体及其制造方法
公开(公告)号：JP2009179517A
公开(公告)日：2009-08-13
申请号：JP2008019768
申请日：2008-01-30
申请人： Nihon Ceratec Co Ltd , Taiheiyo Cement Corp , 太平洋セメント株式会社 , 株式会社日本セラテック
发明人： ICHIKAWA YOSHITAKA , HIRANO KATSUYUKI , IGUCHI MASAHITO , OGURA TOMOYUKI , MIYATA NOBORU
IPC分类号： C04B37/00 , C04B35/64 , C04B38/00
摘要： PROBLEM TO BE SOLVED: To provide a ceramic joined body providing stable flow rate when used as a gas jetting port of a gas distribution plate, and to provide the gas distribution plate using the same and a method of manufacturing the gas distribution plate with high yield. SOLUTION: The ceramic joined body for the gas jetting port is obtained by directly joining a porous ceramic obtained by pressure sintering and having a necking structure of a ceramic coarse granule to a circular dense ceramic without interposing a joining layer. The pressure sintering is discharge plasma sintering. COPYRIGHT: (C)2009,JPO&INPIT

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