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1. 发明申请

US20050105864A1 Waveguide type optical device using large 3rd non-linear optical material and method for operating the same 有权
标题翻译：使用大型第3非线性光学材料的波导型光学器件及其操作方法
公开(公告)号：US20050105864A1
公开(公告)日：2005-05-19
申请号：US10987709
申请日：2004-11-12
申请人： Taek-Sung Lee , Kyeong Lee , Won-Mok Kim , Byung-Ki Cheong , In-Ho Kim
发明人： Taek-Sung Lee , Kyeong Lee , Won-Mok Kim , Byung-Ki Cheong , In-Ho Kim
IPC分类号： G02B6/12 , G02F1/35 , G02B6/00
CPC分类号： G02F1/3517 , G02B2006/12142 , G02B2006/12145 , G02B2006/12147 , G02F1/3521
摘要： Disclosed is a waveguide type optical device utilizing a nonlinear refractive index change according to a large 3rd order nonlinear optical phenomenon. The waveguide type optical device includes a signal beam waveguide through which a signal beam propagates; and a pump beam waveguide through which a pump beam propagates, wherein the pump beam waveguide is disposed adjacent to the signal beam waveguide so that the pump beam can be coupled to the signal beam waveguide, the signal beam waveguide is made of nonlinear optical materials with large 3rd order nonlinear optical property and the pump beam waveguide is made of linear optical materials, and the wavelength range of the signal beam is different from that of the pump beam. By such a structure, the pump beam is coupled to one arm of the signal beam waveguide, thereby generating a 3rd nonlinear phenomenon on one arm of the waveguide through which the signal beam passes. Therefore, the waveguide optical device which implements an all-optical communication device operating as an optical device and can be integrated is provided.
摘要翻译：公开了一种使用根据大的3阶非线性光学现象的非线性折射率变化的波导型光学器件。波导型光学器件包括信号光束波导，信号光束通过该波导波导传播; 以及泵浦光束通过其传播的泵浦波导，其中所述泵浦波导与所述信号光束波导相邻设置，使得所述泵浦波束可以耦合到所述信号波导管，所述信号波束波导由非线性光学材料制成，大的3阶非线性光学特性和泵浦波导由线性光学材料制成，信号光束的波长范围与泵浦光束的波长范围不同。通过这种结构，泵浦光束耦合到信号光束波导的一个臂，从而在信号光束通过的波导的一个臂上产生第三非线性现象。因此，提供了实现作为光学装置工作并可以集成的全光通信装置的波导光学装置。

2. 发明授权

US07181114B2 Waveguide type optical device using large third order non-linearity optical material and method for operating the same 有权
标题翻译：使用大型三阶非线性光学材料的波导型光学器件及其操作方法
公开(公告)号：US07181114B2
公开(公告)日：2007-02-20
申请号：US10987709
申请日：2004-11-12
申请人： Taek-Sung Lee , Kyeong Seok Lee , Won-Mok Kim , Byung-Ki Cheong , In-Ho Kim
发明人： Taek-Sung Lee , Kyeong Seok Lee , Won-Mok Kim , Byung-Ki Cheong , In-Ho Kim
IPC分类号： G02B6/26
CPC分类号： G02F1/3517 , G02B2006/12142 , G02B2006/12145 , G02B2006/12147 , G02F1/3521
摘要： Disclosed is a waveguide type optical device utilizing a nonlinear refractive index change according to a large 3rd order nonlinear optical phenomenon. The waveguide type optical device includes a signal beam waveguide through which a signal beam propagates; and a pump beam waveguide through which a pump beam propagates, wherein the pump beam waveguide is disposed adjacent to the signal beam waveguide so that the pump beam can be coupled to the signal beam waveguide, the signal beam waveguide is made of nonlinear optical materials with large 3rd order nonlinear optical property and the pump beam waveguide is made of linear optical materials, and the wavelength range of the signal beam is different from that of the pump beam. By such a structure, the pump beam is coupled to one arm of the signal beam waveguide, thereby generating a 3rd nonlinear phenomenon on one arm of the waveguide through which the signal beam passes. Therefore, the waveguide optical device which implements an all-optical communication device operating as an optical device and can be integrated is provided.
摘要翻译：公开了一种使用根据大的3阶非线性光学现象的非线性折射率变化的波导型光学器件。波导型光学器件包括信号光束波导，信号光束通过该波导波导传播; 以及泵浦光束通过其传播的泵浦波导，其中所述泵浦波导与所述信号光束波导相邻设置，使得所述泵浦波束可以耦合到所述信号波导管，所述信号波束波导由非线性光学材料制成，大的3阶非线性光学特性和泵浦波导由线性光学材料制成，信号光束的波长范围与泵浦光束的波长范围不同。通过这种结构，泵浦光束耦合到信号光束波导的一个臂，从而在信号光束通过的波导的一个臂上产生第三个非线性现象。因此，提供了实现作为光学装置工作并可以集成的全光通信装置的波导光学装置。

3. 发明申请

US20050208257A1 Optical data storage medium with super resolution layer 失效
标题翻译：具有超分辨率层的光学数据存储介质
公开(公告)号：US20050208257A1
公开(公告)日：2005-09-22
申请号：US10977604
申请日：2004-10-28
申请人： Byung-Ki Cheong , Hyun-Suk Lee , Taek-Sung Lee , Won-Mok Kim , Kyeong-Seok Lee , Jae-Won Lee , Sung-Ho Cho
发明人： Byung-Ki Cheong , Hyun-Suk Lee , Taek-Sung Lee , Won-Mok Kim , Kyeong-Seok Lee , Jae-Won Lee , Sung-Ho Cho
IPC分类号： B32B3/02 , G11B7/24 , G11B7/243
CPC分类号： G11B7/243 , G11B7/24 , G11B2007/24312 , Y10T428/21
摘要： An optical data storage medium comprises a super-resolution (SR) layer consisting of thermoelectric material, said SR layer having light absorption, transmittance and reflectance at the wavelength of an incident light and maintaining a crystalline single phase without a structural or chemical change below the melting temperature of the material. SR readout of data from and/or SR writing of data onto the medium is carried out by way of thermoelectrically induced optical changes within a local area of the SR layer under laser irradiation.
摘要翻译：光学数据存储介质包括由热电材料组成的超分辨率（SR）层，所述SR层在入射光的波长处具有光吸收，透射率和反射率，并保持结晶单相，而不会在材料的熔化温度。通过在激光照射下在SR层的局部区域内的热电感应光学变化来执行从数据和/或SR写数据到介质上的SR读出。

4. 发明授权

US07906195B2 Super-resolution material and high density optical information storage medium using same 有权
标题翻译：超分辨率材料和高密度光信息存储介质使用相同
公开(公告)号：US07906195B2
公开(公告)日：2011-03-15
申请号：US11949927
申请日：2007-12-04
申请人： Byung-Ki Cheong , Taek Sung Lee , Hyun Seok Lee , Jeung-Hyun Jeong , Suyoun Lee , Won Mok Kim
发明人： Byung-Ki Cheong , Taek Sung Lee , Hyun Seok Lee , Jeung-Hyun Jeong , Suyoun Lee , Won Mok Kim
IPC分类号： B32B3/02
CPC分类号： G11B7/24 , G02F1/3523 , G11B7/252 , Y10T428/21 , Y10T428/26
摘要： A super-resolution material for recording and reproducing optical information, comprises a semiconductor material which has a transmittance that increases with an increasing intensity of the incident radiation, and one or more elements selected from the group consisting of nitrogen (N), oxygen (O), carbon (C) and boron (B).
摘要翻译：一种用于记录和再现光学信息的超分辨率材料，包括具有随着入射辐射强度增加而增加的透射率的半导体材料，以及一种或多种选自氮（N），氧（O ），碳（C）和硼（B）。

5. 发明授权

US07758941B2 Optical data storage medium with super resolution layer 失效
标题翻译：具有超分辨率层的光学数据存储介质
公开(公告)号：US07758941B2
公开(公告)日：2010-07-20
申请号：US10977604
申请日：2004-10-28
申请人： Byung-Ki Cheong , Hyun-Suk Lee , Taek-Sung Lee , Won-Mok Kim , Kyeong-Seok Lee , Jae-Won Lee , Sung-Ho Cho
发明人： Byung-Ki Cheong , Hyun-Suk Lee , Taek-Sung Lee , Won-Mok Kim , Kyeong-Seok Lee , Jae-Won Lee , Sung-Ho Cho
IPC分类号： B32B3/02
CPC分类号： G11B7/243 , G11B7/24 , G11B2007/24312 , Y10T428/21
摘要： An optical data storage medium comprises a super-resolution (SR) layer consisting of thermoelectric material, said SR layer having light absorption, transmittance and reflectance at the wavelength of an incident light and maintaining a crystalline single phase without a structural or chemical change below the melting temperature of the material. SR readout of data from and/or SR writing of data onto the medium is carried out by way of thermoelectrically induced optical changes within a local area of the SR layer under laser irradiation.
摘要翻译：光学数据存储介质包括由热电材料组成的超分辨率（SR）层，所述SR层在入射光的波长处具有光吸收，透射率和反射率，并保持晶体单相，而不会在低于材料的熔化温度。通过在激光照射下在SR层的局部区域内的热电感应光学变化来执行从数据和/或SR写数据到介质上的SR读出。

6. 发明申请

US20080131688A1 Super-Resolution Material and High Density Optical Information Storage Medium Using Same 有权
标题翻译：超分辨率材料和高密度光信息存储介质使用相同
公开(公告)号：US20080131688A1
公开(公告)日：2008-06-05
申请号：US11949927
申请日：2007-12-04
申请人： Byung-Ki Cheong , Taek Sung Lee , Hyun Seok Lee , Jeung-Hyun Jeong , Suyoun Lee , Won Mok Kim
发明人： Byung-Ki Cheong , Taek Sung Lee , Hyun Seok Lee , Jeung-Hyun Jeong , Suyoun Lee , Won Mok Kim
IPC分类号： B32B33/00 , G02F1/355
CPC分类号： G11B7/24 , G02F1/3523 , G11B7/252 , Y10T428/21 , Y10T428/26
摘要： A super-resolution material for recording and reproducing optical information, comprises a semiconductor material which has a transmittance that increases with an increasing intensity of the incident radiation, and one or more elements selected from the group consisting of nitrogen (N), oxygen (O), carbon (C) and boron (B).
摘要翻译：一种用于记录和再现光学信息的超分辨率材料，包括具有随着入射辐射强度增加而增加的透射率的半导体材料，以及一种或多种选自氮（N），氧（O ），碳（C）和硼（B）。

7. 发明授权

US5800931A Magnetic recording medium with a MgO sputter deposited seed layer 失效
标题翻译：具有MgO溅射沉积种子层的磁记录介质
公开(公告)号：US5800931A
公开(公告)日：1998-09-01
申请号：US553893
申请日：1995-11-06
申请人： Li-Lien Lee , David N. Lambeth , David E. Laughlin , Byung-Ki Cheong
发明人： Li-Lien Lee , David N. Lambeth , David E. Laughlin , Byung-Ki Cheong
IPC分类号： G11B5/66 , G11B5/73 , G11B5/84
CPC分类号： G11B5/732 , G11B5/66 , G11B5/7325 , G11B5/8404 , Y10S428/90 , Y10T428/12465 , Y10T428/12861 , Y10T428/12896 , Y10T428/12903 , Y10T428/265
摘要： The present invention provides a longitudinal magnetic recording media having a substrate, a sputter deposited MgO seed layer, a Co or Co alloy based magnetic layer and an underlayer disposed between the seed layer and the magnetic layer comprised of Cr, a Cr alloy or a material having a B2 ordered crystalline structure, preferably NiAl or FeAl. A thin Cr or Cr alloy intermediate layer of about 1.0 nm to 5.0 nm thick may be positioned between the underlayer and the magnetic layer.
摘要翻译：本发明提供一种纵向磁记录介质，其具有基板，溅射沉积的MgO种子层，Co或Co合金基磁性层以及设置在种子层和由Cr，Cr合金或材料构成的磁性层之间的底层具有B2有序晶体结构，优选为NiAl或FeAl。约1.0nm至5.0nm厚的薄的Cr或Cr合金中间层可以位于底层和磁性层之间。

8. 发明授权

US06649277B1 Structure for and method of making magnetic recording media 有权
标题翻译：制作磁记录介质的结构和方法
公开(公告)号：US06649277B1
公开(公告)日：2003-11-18
申请号：US09551504
申请日：2000-04-17
申请人： Li-Lien Lee , David N. Lambeth , David E. Laughlin , Byung-Ki Cheong
发明人： Li-Lien Lee , David N. Lambeth , David E. Laughlin , Byung-Ki Cheong
IPC分类号： G11B5738
CPC分类号： G11B5/732 , G11B5/66 , G11B5/7325 , G11B5/8404 , Y10T428/12465 , Y10T428/12861 , Y10T428/12896 , Y10T428/12903 , Y10T428/265
摘要： The present invention provides a longitudinal magnetic recording media having a substrate, optionally, a sputter deposited MgO seed layer, a Co or Co alloy based magnetic layer and an underlayer disposed between the substrate and the magnetic layer comprised of a material having a body centered cubic derivative ordered crystalline structure, preferably a B2, DO3 or L21 structure. The material may be for example, NiAl, FeAl or Mn3Si. A thin Cr or Cr alloy intermediate layer of about 1.0 nm to 5.0 nm thick may be positioned between the underlayer and the magnetic layer.
摘要翻译：本发明提供了一种纵向磁记录介质，其具有基底，任选地，溅射沉积的MgO种子层，基于Co或Co合金的磁性层和设置在基底和磁性层之间的底层，该层由具有体心立方体衍生有序晶体结构，优选B2，DO3或L21结构。该材料可以是例如NiAl，FeAl或Mn 3 Si。约1.0nm至5.0nm厚的薄Cr或Cr合金中间层可位于底层和磁性层之间。

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