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1. 发明申请

US20220182149A1 RING MODULATOR BASELINE WANDER COMPENSATION 有权
公开(公告)号：US20220182149A1
公开(公告)日：2022-06-09
申请号：US17676542
申请日：2022-02-21
申请人： Taehwan KIM , Hao LI , Meer Nazmus SAKIB , Haisheng RONG , Ganesh BALAMURUGAN , Sanjeev GUPTA , Jin HONG , Nikolai FEDIAKINE
发明人： Taehwan KIM , Hao LI , Meer Nazmus SAKIB , Haisheng RONG , Ganesh BALAMURUGAN , Sanjeev GUPTA , Jin HONG , Nikolai FEDIAKINE
IPC分类号： H04B10/50 , G02F1/01
摘要： Embodiments herein relate to techniques for baseline wander (BLW) compensation. The technique may include identifying a data stream that is to be modulated by a ring modulator of an optical transmitter, wherein the data stream has a frequency operable to cause thermal-based BLW of an optical output of the optical transmitter. The technique may further include adjusting a time-varying direct current (DC) voltage bias of the ring modulator based on the frequency of the data stream. Other embodiments may be described and/or claimed.

2. 发明申请

US20210175974A1 OPTICAL COHERENT TRANSMITTER ON A SILICON CHIP 有权
公开(公告)号：US20210175974A1
公开(公告)日：2021-06-10
申请号：US17180529
申请日：2021-02-19
申请人： Aliasghar EFTEKHAR , Duanni HUANG , Meer Nazmus SAKIB , Haisheng RONG , Ansheng LIU , Peicheng LIAO , Hao LI
发明人： Aliasghar EFTEKHAR , Duanni HUANG , Meer Nazmus SAKIB , Haisheng RONG , Ansheng LIU , Peicheng LIAO , Hao LI
IPC分类号： H04B10/50
摘要： Embodiments described herein may be related to apparatuses, processes, and techniques related to fully integrated optical coherent modulators on a silicon chip. These coherent modulators may be used to enable transmitters, receivers, transceivers, tunable lasers and other optical or electro-optical devices to be integrated on a silicon chip. In embodiments, the optical coherent modulators may be based on differential microring modulators that may be nested in a Mach-Zehnder Interferometer (MZI) configuration. Embodiments may also be directed to a miniaturized and fully integrated coherent modulators, which can enable terabit per second (Tbps) transceivers in a small form factor based on coherent modulation on a silicon chip. Other embodiments may be described and/or claimed.

3. 发明申请

US20160266331A1 MONOLITHIC PHYSICALLY DISPLACEABLE OPTICAL WAVEGUIDES 审中-公开
标题翻译：单光子物理位移光学波长
公开(公告)号：US20160266331A1
公开(公告)日：2016-09-15
申请号：US14917933
申请日：2013-12-03
申请人： David N. HUTCHISON , Haisheng RONG , John HECK
发明人： David N. HUTCHISON , Haisheng RONG , John HECK
IPC分类号： G02B6/42 , G02B6/12 , G02B6/122 , G02B6/14
CPC分类号： G02B6/422 , G02B6/12002 , G02B6/12004 , G02B6/12016 , G02B6/1203 , G02B6/12033 , G02B6/122 , G02B6/14 , G02B6/4208 , G02B6/4266
摘要： A portion of an optical waveguide extending laterally within a photonic integrated circuit (PIC) chip is at least partially freed from the substrate to allow physical displacement of a released waveguide end relative to the substrate and relative to an adjacent photonic device also fabricated in the substrate. The released waveguide end may be displaced to modulate interaction between the photonic device and an optical mode propagated by the waveguide. In embodiments where the photonic device is an optical coupler, employing for example an Echelle grating or arrayed waveguide grating (AWG), mode propagation through the coupler may be modulated via physical displacement of the released waveguide end. In one such embodiment, thermal sensitivity of an integrated optical wavelength division multiplexer (WDM) is reduced by displacing the released waveguide end relative to the coupler in a manner that counters a temperature dependence of the optical coupler.
摘要翻译：在光子集成电路（PIC）芯片内横向延伸的光波导的一部分至少部分地从衬底上释放出来，以允许释放的波导端相对于衬底和相对于也在衬底中制造的相邻光子器件的物理位移。释放的波导端可以移位以调制光子器件与由波导传播的光学模式之间的相互作用。在光子器件是光耦合器的实施例中，采用例如Echelle光栅或阵列波导光栅（AWG），通过耦合器的模式传播可以通过释放的波导端的物理位移进行调制。在一个这样的实施例中，集成光波分复用器（WDM）的热灵敏度通过以计数光耦合器的温度依赖性的方式相对于耦合器移位释放的波导端来减小。

4. 发明申请

US20160139350A1 INVERTED 45 DEGREE MIRROR FOR PHOTONIC INTEGRATED CIRCUITS 有权
标题翻译：用于光电集成电路的反相45度镜
公开(公告)号：US20160139350A1
公开(公告)日：2016-05-19
申请号：US14884430
申请日：2015-10-15
申请人： John HECK , Haisheng RONG
发明人： John HECK , Haisheng RONG
IPC分类号： G02B6/42 , G02B6/136 , G02B6/122
CPC分类号： G02B6/4214 , G02B6/122 , G02B6/136 , G02B6/26 , G02B6/42 , G02B6/4208 , G02B2006/12104 , H01L21/30604
摘要： Inverted 45° semiconductor mirrors as vertical optical couplers for PIC chips, particularly optical receivers and transmitters. An inverted 45° semiconductor mirror functions to couple light between a plane in the PIC chip defined by thin film layers and a direction normal to a top surface of the PIC chip where it may be generated or collected by an off-chip component, such as a wire terminal. In an exemplary embodiment, a (110) plane of a cubic crystalline semiconductor may provide a 45° facet inverted relative to a (100) surface of the semiconductor from which light is to be emitted. In further embodiments, a (110) plane may be exposed by undercutting a device layer of a semiconductor on insulator (SOI) substrate. Alternatively, a pre-etched substrate surface may be bonded to a handling wafer, thinned, and then utilized for PIC waveguide formation.
摘要翻译：反向45°半导体镜作为PIC芯片的垂直光耦合器，特别是光接收器和发射器。反向45°半导体反射镜用于耦合由薄膜层限定的PIC芯片中的平面与垂直于PIC芯片的顶表面的方向耦合光，其中它可以由芯片外部件（例如电线终端。在一个示例性实施例中，立方晶体半导体的（110）面可以提供相对于要从其发射光的半导体的（100）表面倒置的45°刻面。在另外的实施例中，可以通过对绝缘体上半导体（SOI）衬底的器件层进行底切来暴露（110）面。或者，预蚀刻的衬底表面可以结合到处理晶片，变薄，然后用于PIC波导形成。

5. 发明申请

US20140003766A1 INVERTED 45 DEGREE MIRROR FOR PHOTONIC INTEGRATED CIRCUITS 有权
标题翻译：用于光电集成电路的反相45度镜
公开(公告)号：US20140003766A1
公开(公告)日：2014-01-02
申请号：US13536723
申请日：2012-06-28
申请人： John HECK , Haisheng RONG
发明人： John HECK , Haisheng RONG
IPC分类号： G02B6/26 , H01L21/306
CPC分类号： G02B6/4214 , G02B6/122 , G02B6/136 , G02B6/26 , G02B6/42 , G02B6/4208 , G02B2006/12104 , H01L21/30604
摘要： Inverted 45° semiconductor mirrors as vertical optical couplers for PIC chips, particularly optical receivers and transmitters. An inverted 45° semiconductor mirror functions to couple light between a plane in the PIC chip defined by thin film layers and a direction normal to a top surface of the PIC chip where it may be generated or collected by an off-chip component, such as a wire terminal. In an exemplary embodiment, a (110) plane of a cubic crystalline semiconductor may provide a 45° facet inverted relative to a (100) surface of the semiconductor from which light is to be emitted. In further embodiments, a (110) plane may be exposed by undercutting a device layer of a semiconductor on insulator (SOI) substrate. Alternatively, a pre-etched substrate surface may be bonded to a handling wafer, thinned, and then utilized for PIC waveguide formation.
摘要翻译：反向45°半导体镜作为PIC芯片的垂直光耦合器，特别是光接收器和发射器。反向45°半导体反射镜用于耦合由薄膜层限定的PIC芯片中的平面与垂直于PIC芯片的顶表面的方向耦合光，其中它可以由芯片外部件（例如电线终端。在一个示例性实施例中，立方晶体半导体的（110）面可以提供相对于要从其发射光的半导体的（100）表面倒置的45°刻面。在另外的实施例中，可以通过对绝缘体上半导体（SOI）衬底的器件层进行底切来暴露（110）面。或者，预蚀刻的衬底表面可以结合到处理晶片，变薄，然后用于PIC波导形成。

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