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1. 发明授权

US5972863A Slurry compositions for polishing wafers used in integrated circuit devices and cleaning compositions for removing electron wax after polishing 失效
标题翻译：用于在集成电路器件中使用的抛光晶片的浆料组合物和用于在抛光之后去除电子蜡的清洁组合物
公开(公告)号：US5972863A
公开(公告)日：1999-10-26
申请号：US41274
申请日：1998-03-12
申请人： Tae-yeol Heo , Jung-min Park , Sung-hoon Cho , Gi-jung Kim
发明人： Tae-yeol Heo , Jung-min Park , Sung-hoon Cho , Gi-jung Kim
IPC分类号： B24B37/00 , C09K3/14 , C11D7/06 , C11D7/20 , C11D11/00 , H01L21/304 , C11D3/14 , C11D9/20
CPC分类号： C11D7/20 , C11D11/0047 , C11D7/06
摘要： Compositions useful for polishing wafers to be used in microelectronic devices comprise silicon dioxide, aluminum oxide, sodium hydroxide, and water. Cleaning compositions for removing electron wax from wafers to be used in microelectronic devices comprise from about 2 to about 6 percent by weight of ammonium hydroxide, from about 10 to about 22 percent by weight of hydrogen peroxide, and water.
摘要翻译：用于抛光用于微电子器件的晶片的组合物包括二氧化硅，氧化铝，氢氧化钠和水。用于从微电子器件中使用的晶片去除电子蜡的清洁组合物包含约2-约6重量％的氢氧化铵，约10-约22重量％的过氧化氢和水。

2. 发明授权

US06252228B1 Method of analyzing morphology of bulk defect and surface defect on semiconductor wafer 失效
标题翻译：分析半导体晶片上体缺陷和表面缺陷形态的方法
公开(公告)号：US06252228B1
公开(公告)日：2001-06-26
申请号：US09204054
申请日：1998-12-03
申请人： Sung-hoon Cho , Tae-yeol Heo
发明人： Sung-hoon Cho , Tae-yeol Heo
IPC分类号： G01N2304
CPC分类号： H01L21/67288
摘要： A method of analyzing the morphology of bulk and surface defects on a semiconductor wafer includes: determining a location of the defects; marking an indication proximate the location; milling the wafer using the indication, to thereby make a specimen; and analyzing the specimen to obtain the defects' morphology. Bulk defects as deep 5-250 &mgr;m can be detected and surface defects as deep as 10 &mgr;m from the wafer's surface can be detected. Both morphology analyses preferably include using TEM (Transmission Electron Microscopy). The location determination for both defects preferably includes projecting a laser beam onto the wafer. By obtaining the morphology of the defects, the cause of failure due to the bulk defects and surface defects can accurately be investigated, increasing semiconductor devices' reliability.
摘要翻译：分析半导体晶片上的体和表面缺陷的形态的方法包括：确定缺陷的位置; 标示位置附近的指示; 使用指示研磨晶片，从而制成样品; 并分析样品以获得缺陷的形态。可以检测到深5-250μm的体积缺陷，并且可以检测到从晶片表面深达10um的表面缺陷。两种形态分析优选包括使用TEM（透射电子显微镜）。两个缺陷的位置确定优选地包括将激光束投射到晶片上。通过获得缺陷的形态，可以准确地研究由于体缺陷和表面缺陷引起的故障原因，提高半导体器件的可靠性。

3. 发明授权

US06170235B2 Wafer packaging method 有权
标题翻译：晶圆包装方法
公开(公告)号：US06170235B2
公开(公告)日：2001-01-09
申请号：US09206234
申请日：1998-12-07
申请人： Kyoo-chul Cho , Jea-gun Park , Sung-hoon Cho
发明人： Kyoo-chul Cho , Jea-gun Park , Sung-hoon Cho
IPC分类号： B65B5500
CPC分类号： H01L21/67353 , H01L21/67386
摘要： A wafer packaging method in which a wafer is placed into a packaging bag that is sealed before the concentration of sulphuric oxide on the surface of the wafer reaches 3×1012 atoms/cm2. The placing of the wafer in the wafer packaging bag is carried out in a substantially clean environment
摘要翻译：一种晶片封装方法，其中将晶片放置在在晶片表面上的硫酸氧化物的浓度达到3×10 12原子/ cm 2之前密封的包装袋中。在晶片包装袋中放置晶片在基本上清洁的环境中进行

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