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1. 发明申请

US20100329001A1 Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween 有权
标题翻译：包括其间具有电化学电位差的磁性膜的半导体存储器件的操作方法
公开(公告)号：US20100329001A1
公开(公告)日：2010-12-30
申请号：US12923013
申请日：2010-08-30
申请人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
发明人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
摘要翻译：提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜当上下磁性膜具有相反的磁化方向时。

2. 发明授权

US07811833B2 Method of manufacturing a multi-purpose magnetic film structure 有权
标题翻译：制造多用途磁性膜结构的方法
公开(公告)号：US07811833B2
公开(公告)日：2010-10-12
申请号：US11898762
申请日：2007-09-14
申请人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
发明人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
IPC分类号： H01L21/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
摘要翻译：提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜当上下磁性膜具有相反的磁化方向时。

3. 发明授权

US07936030B2 Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween 有权
标题翻译：包括其间具有电化学电位差的磁性膜的半导体存储器件的操作方法
公开(公告)号：US07936030B2
公开(公告)日：2011-05-03
申请号：US12923013
申请日：2010-08-30
申请人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
发明人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
IPC分类号： H01L23/02
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
摘要翻译：提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜当上下磁性膜具有相反的磁化方向时。

4. 发明授权

US07272033B2 Magnetic film structure using spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor device 有权
标题翻译：使用自旋电荷的磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作该半导体器件的方法
公开(公告)号：US07272033B2
公开(公告)日：2007-09-18
申请号：US11193625
申请日：2005-08-01
申请人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
发明人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
摘要翻译：提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜当上下磁性膜具有相反的磁化方向时。

5. 发明申请

US20060050445A1 Magnetic film structure using spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor device 有权
标题翻译：使用自旋电荷的磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作该半导体器件的方法
公开(公告)号：US20060050445A1
公开(公告)日：2006-03-09
申请号：US11193625
申请日：2005-08-01
申请人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard Gambino
发明人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard Gambino
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
摘要翻译：提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜当上下磁性膜具有相反的磁化方向时。

6. 发明申请

US20080009080A1 Method of manufacturing a multi-purpose magnetic film structure 有权
标题翻译：制造多用途磁性膜结构的方法
公开(公告)号：US20080009080A1
公开(公告)日：2008-01-10
申请号：US11898762
申请日：2007-09-14
申请人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard Gambino
发明人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard Gambino
IPC分类号： H01L21/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
摘要翻译：提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜当上下磁性膜具有相反的磁化方向时。

7. 发明授权

US07165197B2 Apparatus and method of analyzing a magnetic random access memory 有权
标题翻译：分析磁随机存取存储器的装置和方法
公开(公告)号：US07165197B2
公开(公告)日：2007-01-16
申请号：US10995216
申请日：2004-11-24
申请人： Wan-jun Park , In-jun Hwang , Tae-wan Kim
发明人： Wan-jun Park , In-jun Hwang , Tae-wan Kim
IPC分类号： G11C29/00 , G11C11/00
CPC分类号： G11C11/16 , G11C29/44 , G11C29/50 , G11C29/56
摘要： In an apparatus for analyzing a magnetic random access memory (MRAM), and a method of analyzing an MRAM, the apparatus includes an MRAM mounting unit on which an MRAM is mounted, a magnetic field applying unit positioned around the MRAM mounting unit for applying an external magnetic field to the MRAM mounted on the MRAM mounting unit, a cell addressing unit for selecting one of a plurality of unit cells of the MRAM mounted on the MRAM mounting unit, a source measurement unit for applying an internal magnetic field to the selected unit cell of the MRAM or for measuring a resistance of the selected unit cell of the MRAM, and a computer unit for storing and for analyzing data regarding the measured resistance of the each of the plurality of unit cells of the MRAM.
摘要翻译：在用于分析磁随机存取存储器（MRAM）的装置中，以及分析MRAM的方法，该装置包括安装MRAM的MRAM安装单元，位于MRAM安装单元周围的磁场施加单元，用于施加MRAM 对安装在MRAM安装单元上的MRAM的外部磁场，用于选择安装在MRAM安装单元上的MRAM的多个单位单元中的一个单元寻址单元的单元寻址单元，用于向所选单元施加内部磁场的源测量单元 MRAM的单元或用于测量MRAM的所选单位单元的电阻的计算机单元，以及用于存储和分析关于MRAM的多个单位单元中每个单元的测量电阻的数据的计算机单元。

8. 发明申请

US20050111253A1 Apparatus and method of analyzing a magnetic random access memory 有权
标题翻译：分析磁随机存取存储器的装置和方法
公开(公告)号：US20050111253A1
公开(公告)日：2005-05-26
申请号：US10995216
申请日：2004-11-24
申请人： Wan-jun Park , In-jun Hwang , Tae-wan Kim
发明人： Wan-jun Park , In-jun Hwang , Tae-wan Kim
IPC分类号： G01N27/72 , G01N27/00 , G01N27/04 , G11C11/15 , G11C11/16 , G11C29/44 , G11C29/50 , G11C29/56 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12 , G11C11/00
CPC分类号： G11C11/16 , G11C29/44 , G11C29/50 , G11C29/56
摘要： In an apparatus for analyzing a magnetic random access memory (MRAM), and a method of analyzing an MRAM, the apparatus includes an MRAM mounting unit on which an MRAM is mounted, a magnetic field applying unit positioned around the MRAM mounting unit for applying an external magnetic field to the MRAM mounted on the MRAM mounting unit, a cell addressing unit for selecting one of a plurality of unit cells of the MRAM mounted on the MRAM mounting unit, a source measurement unit for applying an internal magnetic field to the selected unit cell of the MRAM or for measuring a resistance of the selected unit cell of the MRAM, and a computer unit for storing and for analyzing data regarding the measured resistance of the each of the plurality of unit cells of the MRAM.
摘要翻译：在用于分析磁随机存取存储器（MRAM）的装置中，以及分析MRAM的方法，该装置包括安装MRAM的MRAM安装单元，位于MRAM安装单元周围的磁场施加单元，用于施加MRAM 对安装在MRAM安装单元上的MRAM的外部磁场，用于选择安装在MRAM安装单元上的MRAM的多个单位单元中的一个单元寻址单元的单元寻址单元，用于向所选单元施加内部磁场的源测量单元 MRAM的单元或用于测量MRAM的所选单位单元的电阻的计算机单元，以及用于存储和分析关于MRAM的多个单位单元中每个单元的测量电阻的数据的计算机单元。

9. 发明申请

US20050174834A1 Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same 有权
标题翻译：磁性隧道结电池具有具有低磁矩的自由磁性层和具有该磁性随机存取存储器的磁性随机存取存储器
公开(公告)号：US20050174834A1
公开(公告)日：2005-08-11
申请号：US10987185
申请日：2004-11-15
申请人： Tae-wan Kim , Sang-jin Park , In-jun Hwang
发明人： Tae-wan Kim , Sang-jin Park , In-jun Hwang
IPC分类号： H01L27/105 , G11C11/15 , G11C11/16 , H01F10/13 , H01F10/32 , H01L21/8246 , H01L43/08 , G11C11/00
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/135 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic tunneling junction (MTJ) cell includes a free magnetic layer having a low magnetic moment, and a magnetic random access memory (MRAM) includes the MTJ cell. The MTJ cell of the MRAM includes a lower electrode, a lower magnetic layer, a tunneling layer, an upper magnetic layer and an upper electrode, which are sequentially stacked on the lower electrode. The upper magnetic layer includes a free magnetic layer having a thickness of about 5 nm or less. The MTJ cell may have an aspect ratio of about 2 or less, and the free magnetic layer may have a magnetic moment of about 800 emu/cm3 or less.
摘要翻译：磁性隧道结（MTJ）单元包括具有低磁矩的自由磁性层，磁性随机存取存储器（MRAM）包括MTJ单元。 MRAM的MTJ单元包括依次堆叠在下电极上的下电极，下磁层，隧道层，上磁层和上电极。上磁性层包括厚度约5nm以下的自由磁性层。 MTJ单元可以具有约2或更小的纵横比，并且自由磁性层可具有约800emu / cm 3以下的磁矩。

10. 发明授权

US07378716B2 Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same 有权
标题翻译：磁性隧道结电池具有具有低磁矩的自由磁性层和具有该磁性随机存取存储器的磁性随机存取存储器
公开(公告)号：US07378716B2
公开(公告)日：2008-05-27
申请号：US10987185
申请日：2004-11-15
申请人： Tae-wan Kim , Sang-jin Park , In-jun Hwang
发明人： Tae-wan Kim , Sang-jin Park , In-jun Hwang
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/135 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic tunneling junction (MTJ) cell includes a free magnetic layer having a low magnetic moment, and a magnetic random access memory (MRAM) includes the MTJ cell. The MTJ cell of the MRAM includes a lower electrode, a lower magnetic layer, a tunneling layer, an upper magnetic layer and an upper electrode, which are sequentially stacked on the lower electrode. The upper magnetic layer includes a free magnetic layer having a thickness of about 5 nm or less. The MTJ cell may have an aspect ratio of about 2 or less, and the free magnetic layer may have a magnetic moment of about 800 emu/cm3 or less.
摘要翻译：磁性隧道结（MTJ）单元包括具有低磁矩的自由磁性层，磁性随机存取存储器（MRAM）包括MTJ单元。 MRAM的MTJ单元包括依次堆叠在下电极上的下电极，下磁层，隧道层，上磁层和上电极。上磁性层包括厚度约5nm以下的自由磁性层。 MTJ单元可以具有约2或更小的纵横比，并且自由磁性层可具有约800emu / cm 3以下的磁矩。

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