专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070198618A1 Magnetic memory device using magnetic domain motion 有权
标题翻译：磁存储器件采用磁畴运动
公开(公告)号：US20070198618A1
公开(公告)日：2007-08-23
申请号：US11708352
申请日：2007-02-21
申请人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-jun Hwang
发明人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-jun Hwang
IPC分类号： G06F15/02
CPC分类号： G11C11/16 , G11C19/0808
摘要： Example embodiments may provide a magnetic memory device. The example embodiment magnetic memory devices may include a plurality of memory tracks, bit lines, connectors, a first input portion, and/or selectors. The memory track(s) may be stacked on a substrate to form a multi-stack. A plurality of magnetic domains may be formed in the memory track so that a data bit may be represented by a magnetic domain and may be stored in an array. The bit line(s) may be formed along respective memory tracks. The connector(s) may form a magnetic tunnel junction (MTJ) cell with one data bit region of the memory track. The first input portion may be electrically connected to each memory track and may input a magnetic domain motion signal to move data stored on a data bit region of the memory track to an adjoining data bit region. The selector(s) may select a memory track from a plurality of memory tracks on which a reading and/or writing operation may to be performed.
摘要翻译：示例性实施例可以提供磁存储器装置。示例性实施例磁存储器件可以包括多个存储器轨道，位线，连接器，第一输入部分和/或选择器。存储器轨道可以堆叠在衬底上以形成多堆叠。可以在存储器轨道中形成多个磁畴，使得数据位可以由磁畴表示并且可以存储在阵列中。位线可以沿着各个存储器轨道形成。连接器可以形成具有存储器轨道的一个数据位区域的磁性隧道结（MTJ）单元。第一输入部分可以电连接到每个存储器轨道，并且可以输入磁畴运动信号以将存储在存储器轨道的数据位区域上的数据移动到相邻的数据位区域。选择器可以从其上可以执行读取和/或写入操作的多个存储器轨道中选择存储器轨道。

2. 发明授权

US07751223B2 Magnetic memory devices using magnetic domain motion 有权
标题翻译：使用磁畴运动的磁存储器件
公开(公告)号：US07751223B2
公开(公告)日：2010-07-06
申请号：US11707002
申请日：2007-02-16
申请人： Tae-wan Kim , Kee-won Kim , Young-jin Cho , In-jun Hwang
发明人： Tae-wan Kim , Kee-won Kim , Young-jin Cho , In-jun Hwang
IPC分类号： G11C19/00
CPC分类号： G11C11/16 , G11C19/0808 , G11C19/0841 , G11C2213/77
摘要： A magnetic memory device includes a recording layer, a reference layer, a first input portion and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each including a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.
摘要翻译：磁存储器件包括记录层，参考层，第一输入部分和第二输入部分。记录层具有垂直磁化方向和多个磁畴，并且参考层对应于记录层的一部分并具有钉扎磁化方向。记录层具有数据存储单元，其中形成各自包括磁畴的多个数据位区域。磁畴对应于参考层的有效尺寸。第一输入部分输入写入信号和读取信号中的至少一个。第二输入部分电连接到记录层并输入磁畴运动信号，以便将存储在记录层的数据位区域中的数据移动到相邻的数据位区域。

3. 发明授权

US07738278B2 Magnetic memory device using magnetic domain motion 有权
标题翻译：磁存储器件采用磁畴运动
公开(公告)号：US07738278B2
公开(公告)日：2010-06-15
申请号：US11706988
申请日：2007-02-16
申请人： Tae-wan Kim , Young-jin Cho , Kee-won Kim , In-jun Hwang
发明人： Tae-wan Kim , Young-jin Cho , Kee-won Kim , In-jun Hwang
IPC分类号： G11C19/00
CPC分类号： G11C11/15 , G11C19/0808 , G11C19/0841
摘要： A magnetic memory device is provided. The magnetic memory device may include a memory track in which a plurality of magnetic domains is formed so that data bits, each of which may be a magnetic domain, are stored in an array. The memory track may be formed of an amorphous soft magnetic material.
摘要翻译：提供磁存储器件。磁存储器件可以包括其中形成多个磁畴的存储器轨道，使得其中每一个可以是磁畴的数据位被存储在阵列中。存储器轨道可以由非晶软磁材料形成。

4. 发明申请

US20070183188A1 Magnetic device using magnetic domain dragging and method of operating the same 有权
标题翻译：磁性装置使用磁畴拖曳及其操作方法
公开(公告)号：US20070183188A1
公开(公告)日：2007-08-09
申请号：US11657646
申请日：2007-01-25
申请人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-Jun Hwang
发明人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-Jun Hwang
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C19/0808
摘要： Example embodiments may provide a magnetic device using magnetic domain dragging and a method of operating the same. An example embodiment magnetic device may include a data storage cell with a free layer having a switchable magnetization direction and a plurality of adjoining magnetic domains, a reference layer formed to correspond to a portion of the free layer and having a pinned magnetization direction, wherein a plurality of data bit regions may be formed in an array in the free layer, each of the data bit regions being formed with an effective size unit of the reference layer, so that the data storage cell may store a plurality of bits of data in an array, and a first input portion electrically connected to at least one of the data bit regions of the free layer and the reference layer to apply at least one of a writing signal and a reading signal; and a second input portion electrically connected to the free layer to drag data stored in data bit regions of the free layer toward an adjacent data bit region, and applying a dragging signal for magnetic domain dragging.
摘要翻译：示例性实施例可以提供使用磁畴牵引的磁性装置及其操作方法。一个示例性实施例磁性装置可以包括具有自由层的数据存储单元，该自由层具有可切换的磁化方向和多个相邻的磁畴，所述参考层形成为对应于自由层的一部分并且具有钉扎的磁化方向，其中a 可以在自由层中的阵列中形成多个数据位区域，每个数据位区域由参考层的有效大小单位形成，使得数据存储单元可以在多个数据位区域中存储多个数据位阵列，以及电连接到自由层和参考层的数据位区域中的至少一个的第一输入部分，以施加写信号和读信号中的至少一个; 以及第二输入部分，其电连接到所述自由层，以将存储在所述自由层的数据位区域中的数据拖向相邻数据位区域，以及施加用于磁畴拖动的拖动信号。

5. 发明申请

US20080013369A1 Magnetic tunneling junction based logic circuits an methods of operating the same 有权
标题翻译：基于磁隧道结的逻辑电路的操作方法
公开(公告)号：US20080013369A1
公开(公告)日：2008-01-17
申请号：US11654002
申请日：2007-01-17
申请人： Tae-wan Kim , Kee-won Kim , Hyung-soon Shin , Seung-jun Lee , In-jun Hwang , Young-jin Cho
发明人： Tae-wan Kim , Kee-won Kim , Hyung-soon Shin , Seung-jun Lee , In-jun Hwang , Young-jin Cho
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , H03K19/18 , H03K19/21
摘要： MTJ cell based logic circuits and MTJ cell drivers having improved operating speeds compared to the conventional art, and operating methods thereof are described. An MTJ cell driver may include a lower electrode, an MTJ cell on the lower electrode, an upper electrode on the MTJ cell, and first through third input lines arranged in parallel above the upper electrode
摘要翻译：描述了与传统技术相比具有改进的操作速度的基于MTJ单元的逻辑电路和MTJ单元驱动器及其操作方法。 MTJ单元驱动器可以包括下电极，下电极上的MTJ单元，MTJ单元上的上电极以及平行于上电极上方布置的第一至第三输入线

6. 发明申请

US20070195587A1 Magnetic memory device using magnetic domain motion 有权
标题翻译：磁存储器件采用磁畴运动
公开(公告)号：US20070195587A1
公开(公告)日：2007-08-23
申请号：US11706988
申请日：2007-02-16
申请人： Tae-wan Kim , Young-jin Cho , Kee-won Kim , In-jun Hwang
发明人： Tae-wan Kim , Young-jin Cho , Kee-won Kim , In-jun Hwang
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , G11C19/0808 , G11C19/0841
摘要： A magnetic memory device is provided. The magnetic memory device may include a memory track in which a plurality of magnetic domains is formed so that data bits, each of which may be a magnetic domain, are stored in an array. The memory track may be formed of an amorphous soft magnetic material.
摘要翻译：提供磁存储器件。磁存储器件可以包括其中形成多个磁畴的存储器轨道，使得其中每一个可以是磁畴的数据位被存储在阵列中。存储器轨道可以由非晶软磁材料形成。

7. 发明授权

US08339728B2 Magnetic memory device using magnetic domain motion 有权
标题翻译：磁存储器件采用磁畴运动
公开(公告)号：US08339728B2
公开(公告)日：2012-12-25
申请号：US11708352
申请日：2007-02-21
申请人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-jun Hwang
发明人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-jun Hwang
IPC分类号： G11C29/00
CPC分类号： G11C11/16 , G11C19/0808
摘要： Example embodiments may provide a magnetic memory device. The example embodiment magnetic memory devices may include a plurality of memory tracks, bit lines, connectors, a first input portion, and/or selectors. The memory track(s) may be stacked on a substrate to form a multi-stack. A plurality of magnetic domains may be formed in the memory track so that a data bit may be represented by a magnetic domain and may be stored in an array. The bit line(s) may be formed along respective memory tracks. The connector(s) may form a magnetic tunnel junction (MTJ) cell with one data bit region of the memory track. The first input portion may be electrically connected to each memory track and may input a magnetic domain motion signal to move data stored on a data bit region of the memory track to an adjoining data bit region. The selector(s) may select a memory track from a plurality of memory tracks on which a reading and/or writing operation may to be performed.
摘要翻译：示例性实施例可以提供磁存储器装置。示例性实施例磁存储器件可以包括多个存储器轨道，位线，连接器，第一输入部分和/或选择器。存储器轨道可以堆叠在衬底上以形成多堆叠。可以在存储器轨道中形成多个磁畴，使得数据位可以由磁畴表示并且可以存储在阵列中。位线可以沿着各个存储器轨道形成。连接器可以形成具有存储器轨道的一个数据位区域的磁性隧道结（MTJ）单元。第一输入部分可以电连接到每个存储器轨道，并且可以输入磁畴运动信号以将存储在存储器轨道的数据位区域上的数据移动到相邻的数据位区域。选择器可以从其上可以执行读取和/或写入操作的多个存储器轨道中选择存储器轨道。

8. 发明授权

US07439770B2 Magnetic tunneling junction based logic circuits and methods of operating the same 有权
标题翻译：基于磁隧道结的逻辑电路及其操作方法
公开(公告)号：US07439770B2
公开(公告)日：2008-10-21
申请号：US11654002
申请日：2007-01-17
申请人： Tae-wan Kim , Kee-won Kim , Hyung-soon Shin , Seung-jun Lee , In-jun Hwang , Young-jin Cho
发明人： Tae-wan Kim , Kee-won Kim , Hyung-soon Shin , Seung-jun Lee , In-jun Hwang , Young-jin Cho
IPC分类号： H03K19/21
CPC分类号： G11C11/16 , H03K19/18 , H03K19/21
摘要： MTJ cell based logic circuits and MTJ cell drivers having improved operating speeds compared to the conventional art, and operating methods thereof are described. An MTJ cell driver may include a lower electrode, an MTJ cell on the lower electrode, an upper electrode on the MTJ cell, and first through third input lines arranged in parallel above the upper electrode
摘要翻译：描述了与传统技术相比具有改进的操作速度的基于MTJ单元的逻辑电路和MTJ单元驱动器及其操作方法。 MTJ单元驱动器可以包括下电极，下电极上的MTJ单元，MTJ单元上的上电极以及平行于上电极上方布置的第一至第三输入线

9. 发明申请

US20080137395A1 DATA STORAGE DEVICE USING MAGNETIC DOMAIN WALL MOVEMENT AND METHOD OF OPERATING THE SAME 有权
标题翻译：使用磁畴壁移动的数据存储装置及其操作方法
公开(公告)号：US20080137395A1
公开(公告)日：2008-06-12
申请号：US11764432
申请日：2007-06-18
申请人： In-jun Hwang , Young-jin Cho , Sung-hoon Choa , Kee-won Kim , Kwang-seok Kim
发明人： In-jun Hwang , Young-jin Cho , Sung-hoon Choa , Kee-won Kim , Kwang-seok Kim
IPC分类号： G11C19/00
CPC分类号： G11C11/15 , G11C19/0808 , G11C19/0841
摘要： Provided are a data storage device using magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a first magnetic layer for writing data having two magnetic domains magnetized in opposite directions to each other and a second magnetic layer for storing data formed on at least one side of the first magnetic layer. The data storage device may further include a data recording device connected to both ends of the first magnetic layer and the end of the second magnetic layer which is not adjacent to the first magnetic layer, a read head formed a predetermined distance from the end of the second magnetic layer which is not adjacent to the first magnetic layer, and a current detector connected to the read head and the data recording device.
摘要翻译：提供了使用磁畴壁移动的数据存储装置和操作数据存储装置的方法。数据存储装置包括用于写入具有彼此相反方向磁化的两个磁畴的数据的第一磁性层和用于存储形成在第一磁性层的至少一侧上的数据的第二磁性层。数据存储装置还可以包括连接到第一磁性层的两端和不与第一磁性层相邻的第二磁性层的端部的数据记录装置，从头部的端部形成预定距离的读取头与第一磁性层不相邻的第二磁性层和连接到读取头和数据记录装置的电流检测器。

10. 发明授权

US08437160B2 Multi-stack memory device 有权
标题翻译：多堆存储器件
公开(公告)号：US08437160B2
公开(公告)日：2013-05-07
申请号：US11978583
申请日：2007-10-30
申请人： In-jun Hwang , Sung-hoon Choa , Young-jin Cho , Kee-won Kim
发明人： In-jun Hwang , Sung-hoon Choa , Young-jin Cho , Kee-won Kim
IPC分类号： G11C5/02
CPC分类号： G11C5/02 , G11C11/16 , G11C19/0808 , G11C2213/71 , H01L21/8221 , H01L27/0688 , H01L27/11521 , H01L27/11524 , H01L27/11551
摘要： Provided is a multi-stack memory device that includes a storage unit group including a plurality of storage units that are vertically stacked and form a plurality of storage unit rows, and a plurality of transistors connected to the storage unit group, wherein the transistors that are connected to the storage units which are included in at least two rows of the plurality of the storage unit rows and are connected by a common wire. The common wire may be a gate line or a bit line.
摘要翻译：本发明提供一种多层存储装置，其特征在于，包括具有垂直堆叠的多个存储单元和多个存储单元行的存储单元组，以及与所述存储单元组连接的多个晶体管，其中，连接到包含在多个存储单元行中的至少两行的存储单元，并通过公共线连接。公共线可以是栅线或位线。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式