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1. 发明申请

US20080080041A1 Flat panel display 审中-公开
标题翻译：平板显示器
公开(公告)号：US20080080041A1
公开(公告)日：2008-04-03
申请号：US11896768
申请日：2007-09-05
申请人： Tae-suh Park , Young-hyun Kim , Hee-seob Ryu , Yong-beom Lee
发明人： Tae-suh Park , Young-hyun Kim , Hee-seob Ryu , Yong-beom Lee
IPC分类号： G02F1/153
CPC分类号： G02F1/163 , G02F1/0121
摘要： Provided is a flat panel display (FPD), and more particularly, an FPD to display an image by controlling optical properties of a portion of the FPD. The FPD may include an image panel unit whose optical properties are locally controlled; a panel control unit to form a line field by controlling optical properties of a horizontal or vertical line region of the image panel unit; and an image input unit to project an image, which is to be output on the image panel unit, to the formed line field.
摘要翻译：提供了一种平板显示器（FPD），更具体地，是通过控制FPD的一部分的光学特性来显示图像的FPD。 FPD可以包括其光学性质被局部控制的图像面板单元; 面板控制单元，通过控制图像面板单元的水平或垂直线区域的光学特性来形成线场; 以及将要在图像面板单元上输出的图像投影到形成的行场的图像输入单元。

2. 发明授权

US09178135B2 Magnetic device 有权
标题翻译：磁性装置
公开(公告)号：US09178135B2
公开(公告)日：2015-11-03
申请号：US14254858
申请日：2014-04-16
申请人： Young-hyun Kim , Hee-ju Shin , Woo-jin Kim , Sang-hwan Park
发明人： Young-hyun Kim , Hee-ju Shin , Woo-jin Kim , Sang-hwan Park
IPC分类号： H01L43/02 , H01L43/10 , H01L43/08 , H01L43/12 , H01L27/22
CPC分类号： H01L43/10 , G11C11/161 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic device can include a tunnel bather and a hybrid magnetization layer disposed adjacent the tunnel barrier. The hybrid magnetization layer can include a first perpendicular magnetic anisotropy (PMA) layer, a second PMA layer, and an amorphous blocking layer disposed between the first and second PMA layers. The first PMA layer can include a multi-layer film in which a first layer formed of Co and a second layer formed of Pt or Pd are alternately stacked. A first dopant formed of an element different from those of the first and second layers can also be included in the first PMA layer. The second PMA layer can be disposed between the first PMA layer and the tunnel barrier, and can include at least one element selected from a group consisting of Co, Fe, and Ni.
摘要翻译：磁性装置可以包括隧道沐浴器和邻近隧道屏障设置的混合磁化层。混合磁化层可以包括第一垂直磁各向异性（PMA）层，第二PMA层和设置在第一和第二PMA层之间的非晶形阻挡层。第一PMA层可以包括多层膜，其中由Co形成的第一层和由Pt或Pd形成的第二层交替堆叠。由与第一层和第二层不同的元素形成的第一掺杂剂也可以包括在第一PMA层中。第二PMA层可以设置在第一PMA层和隧道势垒之间，并且可以包括选自由Co，Fe和Ni组成的组中的至少一种元素。

3. 发明授权

US08299450B2 Non-volatile memory device including phase-change material 有权
标题翻译：包括相变材料的非易失性存储器件
公开(公告)号：US08299450B2
公开(公告)日：2012-10-30
申请号：US12697667
申请日：2010-02-01
申请人： Dong-ho Ahn , Hideki Horii , Soon-oh Park , Young-hyun Kim , Heo-ju Shin , Jin-ho Oh
发明人： Dong-ho Ahn , Hideki Horii , Soon-oh Park , Young-hyun Kim , Heo-ju Shin , Jin-ho Oh
IPC分类号： H01L29/12
CPC分类号： H01L45/124 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： A non-volatile memory device includes a lower electrode, a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. The phase-change material layer includes a phase-change material including a composition represented by the formula (I)A(IIXIIIYIVZ)(1-A), where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and where 0.001≦A≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.
摘要翻译：非易失性存储器件包括下电极，形成在下电极上的相变材料层以与下电极电连接;以及上电极，形成在相变材料层上，以便电连接到相变材料层。相变材料层包括含有由式（I）A（IIXIIIYIVZ）（1-A）表示的组合物的相变材料，其中I为As和Se中的至少一种，II为Ge中的至少一种，Si和Sn，III是Sb和Bi中的至少一种，IV是Te和Se中的至少一种，并且其中0.001和nlE; A和nlE; 0.3,0.001和nlE; X和nlE; 0.3,0.001和nlE; Y和nlE; 0.8,0.1 ＆nlE; Z＆nlE; 0.8和X + Y + Z = 1。

4. 发明授权

US08222625B2 Non-volatile memory device including phase-change material 有权
标题翻译：包括相变材料的非易失性存储器件
公开(公告)号：US08222625B2
公开(公告)日：2012-07-17
申请号：US12657715
申请日：2010-01-26
申请人： Dong-ho Ahn , Hideki Horii , Soon-oh Park , Young-hyun Kim , Hee-ju Shin , Jin-ho Oh , Carl H. Schell , Jonathan D. Maimon , Stephen J. Hudgens
发明人： Dong-ho Ahn , Hideki Horii , Soon-oh Park , Young-hyun Kim , Hee-ju Shin , Jin-ho Oh , Carl H. Schell , Jonathan D. Maimon , Stephen J. Hudgens
IPC分类号： H01L45/00
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/141 , H01L45/144
摘要： A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by SnXSbYTeZ or, alternatively with substitutions, in whole or in part, of silicon and/or indium for tin, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. Here, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.
摘要翻译：包括具有低工作电压和低功耗的相变材料的非易失性存储器件包括下电极; 相变材料层，形成在下电极上，以与下电极电连接，其中相变材料层包括具有由SnXSbYTeZ表示的组成的相变材料，或者替代地，全部或部分由硅和/或铟制成的锡，砷和/或锑的铋，以及碲的硒; 以及形成在所述相变材料层上以与所述相变材料层电连接的上电极。这里，0.001＆nlE; X＆lt; NE; 0.3，0.001＆nlE; Y＆nlE; 0.8,0.1＆nlE; Z＆nlE; 0.8和X + Y + Z = 1。

5. 发明申请

US20120018824A1 MAGNETIC MEMORY LAYER AND MAGNETIC MEMORY DEVICE INCLUDING THE SAME 有权
标题翻译：磁记忆层和磁记忆体装置，包括它们
公开(公告)号：US20120018824A1
公开(公告)日：2012-01-26
申请号：US13170870
申请日：2011-06-28
申请人： Woo-chang LIM , Young-hyun Kim , Jun-ho Jeong , Hee-ju Shin
发明人： Woo-chang LIM , Young-hyun Kim , Jun-ho Jeong , Hee-ju Shin
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/10
摘要： A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the crystal direction with respect to a surface of the second seed layer.
摘要翻译：磁存储层和包括该磁存储器的磁存储器件，所述磁存储层包括第一晶种层; 在所述第一种子层上的第二种子层，所述第二种子层相对于所述第一种子层的表面根据晶体方向生长; 以及在所述第二种子层上的主磁性层，所述主磁性层相对于所述第二晶种层的表面根据所述晶体方向生长。

6. 发明申请

US20110049459A1 NON-VOLATILE MEMORY DEVICE INCLUDING PHASE-CHANGE MATERIAL 有权
标题翻译：非易失性存储器件，包括相变材料
公开(公告)号：US20110049459A1
公开(公告)日：2011-03-03
申请号：US12697667
申请日：2010-02-01
申请人： Dong-ho Ahn , Hideki Horii , Soon-oh Park , Young-hyun Kim , Heo-ju Shin , Jin-ho Oh
发明人： Dong-ho Ahn , Hideki Horii , Soon-oh Park , Young-hyun Kim , Heo-ju Shin , Jin-ho Oh
IPC分类号： H01L45/00 , G06F12/00
CPC分类号： H01L45/124 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： A non-volatile memory device includes a lower electrode, a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. The phase-change material layer includes a phase-change material including a composition represented by the formula (I)A(IIXIIYIVZ)(1-A), where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and where 0.001≦A≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.
摘要翻译：非易失性存储器件包括下电极，形成在下电极上的相变材料层以与下电极电连接;以及上电极，形成在相变材料层上，以便电连接到相变材料层。相变材料层包括含有由式（I）A（IIXIIYIVZ）（1-A）表示的组合物的相变材料，其中I为As和Se中的至少一种，II为Ge中的至少一种，Si和Sn，III是Sb和Bi中的至少一种，IV是Te和Se中的至少一种，并且其中0.001和nlE; A和nlE; 0.3,0.001和nlE; X和nlE; 0.3,0.001和nlE; Y和nlE; 0.8,0.1 ＆nlE; Z＆nlE; 0.8和X + Y + Z = 1。

7. 发明申请

US20110049458A1 Non-volatile memory device including phase-change material 有权
标题翻译：包括相变材料的非易失性存储器件
公开(公告)号：US20110049458A1
公开(公告)日：2011-03-03
申请号：US12657715
申请日：2010-01-26
申请人： Dong-ho Ahn , Hideki Horii , Soon-oh Park , Young-hyun Kim , Hee-ju Shin , Jin-ho Oh
发明人： Dong-ho Ahn , Hideki Horii , Soon-oh Park , Young-hyun Kim , Hee-ju Shin , Jin-ho Oh
IPC分类号： H01L45/00
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/141 , H01L45/144
摘要： A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by SnXSbYTeZ or, alternatively with substitutions, in whole or in part, of silicon and/or indium for tin, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. Here, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.
摘要翻译：包括具有低工作电压和低功耗的相变材料的非易失性存储器件包括下电极; 相变材料层，形成在下电极上，以与下电极电连接，其中相变材料层包括具有由SnXSbYTeZ表示的组成的相变材料，或者替代地，全部或部分由硅和/或铟制成的锡，砷和/或锑的铋，以及碲的硒; 以及形成在所述相变材料层上以与所述相变材料层电连接的上电极。这里，0.001＆nlE; X＆lt; NE; 0.3，0.001＆nlE; Y＆nlE; 0.8,0.1＆nlE; Z＆nlE; 0.8和X + Y + Z = 1。

8. 发明授权

US08803265B2 Magnetic memory layer and magnetic memory device including the same 有权
标题翻译：磁存储层和包括其的磁存储器件
公开(公告)号：US08803265B2
公开(公告)日：2014-08-12
申请号：US13170870
申请日：2011-06-28
申请人： Woo-chang Lim , Young-hyun Kim , Jun-ho Jeong , Hee-ju Shin
发明人： Woo-chang Lim , Young-hyun Kim , Jun-ho Jeong , Hee-ju Shin
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/10
摘要： A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the crystal direction with respect to a surface of the second seed layer.
摘要翻译：磁存储层和包括该磁存储器的磁存储器件，所述磁存储层包括第一晶种层; 在所述第一种子层上的第二种子层，所述第二种子层相对于所述第一种子层的表面根据晶体方向生长; 以及在所述第二种子层上的主磁性层，所述主磁性层相对于所述第二晶种层的表面根据所述晶体方向生长。

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