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    • 6. 发明授权
    • Thin film transistor substrate, method for producing same, and display device
    • 薄膜晶体管基板,其制造方法以及显示装置
    • US08842229B2
    • 2014-09-23
    • US13640381
    • 2011-01-12
    • Tadayoshi Miyamoto
    • Tadayoshi Miyamoto
    • G02F1/136H01L27/12
    • H01L27/1214H01L27/1225
    • Disclosed is an active matrix substrate (20a) that includes: an insulating substrate (10a); a first thin film transistor (5a) that is formed on the insulating substrate (10a) and that includes a first oxide semiconductor layer (13a) having a first channel region (Ca); a second thin film transistor (5b) that is formed on the insulating substrate (10a) and that includes a second oxide semiconductor layer (13b) having a second channel region (Cb); and an interlayer insulating film (17) that covers the first oxide semiconductor layer (13a) and the second oxide semiconductor layer (13b). A channel protective film (25), which is formed of a material different from that of the interlayer insulating film (17), is provided between the second oxide semiconductor layer (13b) and the interlayer insulating film (17) on the second channel region (Cb) in the second oxide semiconductor layer (13b).
    • 公开了一种有源矩阵基板(20a),其包括:绝缘基板(10a); 第一薄膜晶体管(5a),其形成在所述绝缘基板(10a)上并且包括具有第一沟道区域(Ca)的第一氧化物半导体层(13a); 第二薄膜晶体管(5b),其形成在所述绝缘基板(10a)上并且包括具有第二沟道区域(Cb)的第二氧化物半导体层(13b); 和覆盖第一氧化物半导体层(13a)和第二氧化物半导体层(13b)的层间绝缘膜(17)。 在第二沟道区域上的第二氧化物半导体层(13b)和层间绝缘膜(17)之间设置由不同于层间绝缘膜(17)的材料形成的沟道保护膜(25) (Cb)在第二氧化物半导体层(13b)中。
    • 7. 发明申请
    • DISPLAY PANEL AND DISPLAY DEVICE USING THE SAME
    • 显示面板和使用该显示面板的显示设备
    • US20110157113A1
    • 2011-06-30
    • US13062077
    • 2009-06-04
    • Tadayoshi MiyamotoKatsuyuki SugaFumiyoshi YoshiokaSatomi Hasegawa
    • Tadayoshi MiyamotoKatsuyuki SugaFumiyoshi YoshiokaSatomi Hasegawa
    • G09G5/00
    • H01L27/12H01L21/02422H01L21/02532H01L21/02683H01L21/02691H01L21/268H01L27/1229H01L27/1285
    • A display panel (100) is provided which allows optimization of the respective characteristics of different semiconductor elements without incurring an increase in manufacturing cost. The display panel (100) includes: pixel TFTs (11) disposed in a display section (101); scanning driver TFTs (12) disposed in a scanning driver (102); and data driver (13) disposed in a data driver (103). A polysilicon film of the pixel TFTs (11), the scanning driver TFTs (12), and the data driver TFTs (13) is polycrystallized by irradiation of laser light so as to have a crystal growth direction that goes along a scanning direction of the laser light. The pixel TFTs (11) are disposed so that the crystal growth direction of the polysilicon film is substantially perpendicular to the directions of current paths of the pixel TFTs (11). The scanning driver TFTs (12) and the data driver TFTs (13) are so that the crystal growth direction of the polysilicon film is substantially parallel to the directions of current paths of the scanning driver TFTs (12) and the data driver TFTs (13).
    • 提供了显示面板(100),其允许优化不同半导体元件的相应特性,而不会导致制造成本的增加。 显示面板(100)包括:设置在显示部(101)中的像素TFT(11); 设置在扫描驱动器(102)中的扫描驱动TFT(12); 和数据驱动器(13),其设置在数据驱动器(103)中。 像素TFT(11),扫描驱动器TFT(12)和数据驱动器TFT(13)的多晶硅膜通过激光的照射被多晶化,以具有沿着扫描方向的晶体生长方向 激光灯。 像素TFT(11)被布置成使得多晶硅膜的晶体生长方向基本上垂直于像素TFT(11)的电流路径的方向。 扫描驱动器TFT(12)和数据驱动器TFT(13)使得多晶硅膜的晶体生长方向基本上平行于扫描驱动TFT(12)和数据驱动器TFT(13)的电流路径的方向 )。
    • 10. 发明授权
    • Method for fabricating a semiconductor device
    • 半导体器件的制造方法
    • US6013544A
    • 2000-01-11
    • US610227
    • 1996-03-04
    • Naoki MakitaTadayoshi MiyamotoTsukasa Shibuya
    • Naoki MakitaTadayoshi MiyamotoTsukasa Shibuya
    • H01L21/205H01L21/20H01L21/268H01L21/336H01L21/84H01L29/78H01L29/786
    • H01L21/02532H01L21/02422H01L21/02672H01L21/02675H01L27/1277
    • A method for fabricating a semiconductor device including an active region obtained by utilizing a silicon semiconductor film having crystallinity which is formed on an insulating substrate is disclosed. A crystalline silicon semiconductor film is obtained by introducing catalyst elements for promoting the crystallization into a lower amorphous silicon semiconductor film and then performing a heat treatment onto the lower amorphous silicon semiconductor film. Thereafter, an upper amorphous silicon semiconductor film is formed on the obtained lower crystalline silicon semiconductor film, which is subsequently subjected to a heat treatment so as to obtain an upper crystalline silicon semiconductor film. Then, the upper crystalline silicon semiconductor film is removed. By this process, the catalyst elements remaining in the lower crystalline silicon semiconductor film moves into the upper crystalline silicon semiconductor film. As a result, a concentration of the catalyst elements in the lower crystalline silicon semiconductor film is reduced.
    • 公开了一种制造半导体器件的方法,该半导体器件包括通过利用形成在绝缘衬底上的具有结晶性的硅半导体膜而获得的有源区。 通过将用于促进结晶的催化剂元素引入到下部非晶硅半导体膜中,然后对下部非晶硅半导体膜进行热处理,获得结晶硅半导体膜。 此后,在所获得的下部结晶硅半导体膜上形成上部非晶硅半导体膜,随后对其进行热处理,以获得上部结晶硅半导体膜。 然后,除去上部晶体硅半导体膜。 通过该工艺,残留在下结晶硅半导体膜中的催化剂元素移动到上结晶硅半导体膜中。 结果,下层结晶硅半导体膜中的催化剂元素的浓度降低。