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    • 1. 发明授权
    • Electrophotographic apparatus having an a-Si photosensitive drum
assembled therein
    • 其中组装有a-Si感光鼓的电子照相设备
    • US5729800A
    • 1998-03-17
    • US332481
    • 1994-10-27
    • Tadashi OhbaNorio TomiieKeiji ItsukushimaHisashi Higuchi
    • Tadashi OhbaNorio TomiieKeiji ItsukushimaHisashi Higuchi
    • G03G5/082G03G13/22G03G15/00G03G15/02
    • G03G15/751G03G13/22G03G5/08235Y10S430/102
    • An electrophotographic apparatus using an a-Si photosensitive drum. The a-Si photosensitive drum has a thickness between 2 and 25 .mu.m. The initial charging potential on the photosensitive drum is set to 450V or below. The center exposure wavelength of an exposure means is set to 700 nm or above. The photosensitive drum includes a photoconductive layer formed as a thin film a-Si layer having a temperature characteristic of 1.0 V/.degree.C. or below. For realizing low charging potential and low electric field development, the thickness d of the photoconductive layer in the photosensitive drum is set to 2 to 24 .mu.m, the relative dielectric constant .epsilon.r is set to 2 or above, and the ratio d/.epsilon.r is set to 9 or below. The photosensitive drum is formed on a conductive support and has a three-layer structure, including a carrier charge blocking layer for blocking the introduction of carrier charge (of the opposite polarity to that of charging) from the conductive support into the photoconductive layer, a photoconductive layer and an insulating or high resistivity layer.
    • 使用a-Si感光鼓的电子照相设备。 a-Si感光鼓的厚度为2至25μm。 感光鼓上的初始充电电位设定为450V以下。 曝光装置的中心曝光波长设定为700nm以上。 感光鼓包括形成为具有1.0V /℃以下的温度特性的薄膜a-Si层的光电导层。 为了实现低充电电位和低电场发展,将感光鼓中的光电导层的厚度d设定为2〜24μm,相对介电常数εr设定为2以上,比率d /ε r设置为9或更低。 感光鼓形成在导电支撑件上并且具有三层结构,包括用于阻止从导电支撑件引入到光电导层中的载流子电荷(与充电相反的极性)的载流子电荷阻挡层, 光电导层和绝缘或高电阻率层。