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1. 发明专利

JP2005290118A Resin molded article containing more fluorine atom in its surface layer part 有权
标题翻译：在其表面层中含有更多氟化物的树脂成型品
公开(公告)号：JP2005290118A
公开(公告)日：2005-10-20
申请号：JP2004104890
申请日：2004-03-31
申请人： Nippon Zeon Co Ltd , Tadahiro Omi , 忠弘大見 , 日本ゼオン株式会社
发明人： OMI TADAHIRO , FUTAI KEIICHI , TANAHASHI NAOKI , OSHIMA MASAYOSHI
IPC分类号： C08J7/00
摘要： PROBLEM TO BE SOLVED: To provide a resin molded article, capable of improving optical characteristics such as a low light reflectance, a high light transmittance, etc., and at the same time exhibiting water repellency and soil prevention effect.
SOLUTION: This resin molded article having a phase of an alicyclic structure-containing polymer resin or the alicyclic structure-containing polymer resin composition containing more fluorine atom content at the surface layer part than that in the inner layer part of the molded article consisting of the alicyclic structure-containing polymer resin or alicyclic structure-containing polymer resin composition is obtained by heating a molded substrate consisting of the alicyclic structure-containing polymer resin or alicyclic structure-containing polymer resin composition under an inert gas atmosphere or under a reduced pressure, bringing fluorine gas in contact with the molded substrate surface by leaving the molded substrate under an atmosphere containing fluorine gas and then re-heating the molded substrate under the inert gas atmosphere or under the reduced pressure.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够改善低反射率，高透光率等光学特性的同时具有防水性和防污效果的树脂成型体。解决方案：具有含脂环结构的聚合物树脂的相的树脂模塑制品或在表层部分含有比在模塑制品的内层部分更多的氟原子含量的脂环族结构的聚合物树脂组合物由含有脂环结构的聚合物树脂或含脂环结构的聚合物树脂组合物通过在惰性气体气氛下或减压下加热由含有脂环结构的聚合物树脂或含脂环结构的聚合物树脂组合物组成的模塑基材而获得压力，通过将模塑基板留在含氟气体的气氛下，使氟气与模塑基板表面接触，然后在惰性气体气氛下或在减压下再次加热成型基板。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2004200672A Semiconductor device, method of manufacturing the same, and method of processing semiconductor surface 有权
公开(公告)号：JP2004200672A
公开(公告)日：2004-07-15
申请号：JP2003403290
申请日：2003-12-02
申请人： Tadahiro Omi , 忠弘大見
发明人： OMI TADAHIRO , TERAMOTO AKINOBU , AKAHORI HIROSHI , FUTAI KEIICHI
IPC分类号： H01L21/318 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is improved in performance by reducing a roughness of a silicon surface.
SOLUTION: A surface of a semiconductor like silicon that has a surface (110) thereon is made of Ra with a thickness of 0.15 nm or smaller, so that a transistor can be fabricated with a high mobility. To be specific, an oxide film is formed on the semiconductor surface by radical oxidation after RCA cleaning, and then, the oxide film is exfoliated, so that the semiconductor surface is flattened. The same result is obtained also by forming an oxide film by means of wet oxidation and repeating etchback.
COPYRIGHT: (C)2004,JPO&NCIPI

3. 发明专利

JP2005274748A Method for manufacturing transparent member having fluoride layer on surface, and plastic member 有权
标题翻译：在表面上制造氟化物层的透明成员和塑料成员的方法
公开(公告)号：JP2005274748A
公开(公告)日：2005-10-06
申请号：JP2004085224
申请日：2004-03-23
申请人： Tadahiro Omi , 忠弘大見
发明人： OMI TADAHIRO , TANAHASHI NAOKI , FUTAI KEIICHI
IPC分类号： G02B1/11 , C08J7/12
摘要： PROBLEM TO BE SOLVED: To provide a plastic member with decreased surface reflection by decreasing the refractive index of a surface layer of a plastic member such as a transparent polymer molded product.
SOLUTION: A plastic member such as a hydrocarbon transparent polymer molding is fluorinated in fluorine gas in a reaction apparatus 8 so as to fluorinate only the surface layer to decrease the refractive index. Thus, surface reflection is decreased and the transmittance for rays of the base material can be improved.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过降低诸如透明聚合物模制产品的塑料构件的表面层的折射率来提供具有降低的表面反射的塑料构件。解决方案：在反应装置8中，在氟气中氟化含烃透明聚合物成型体的塑料部件，仅使表面层氟化，降低折射率。因此，表面反射减少，并且可以提高基材的射线的透射率。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005029893A Method of producing fluorocarbon film, industrial material or industrial product using the same, and device using the industrial material 有权
标题翻译：生产氟碳膜的方法，使用该方法的工业材料或工业产品和使用工业材料的装置
公开(公告)号：JP2005029893A
公开(公告)日：2005-02-03
申请号：JP2004181845
申请日：2004-06-18
申请人： Tadahiro Omi , Stella Chemifa Corp , ステラケミファ株式会社 , 忠弘大見
发明人： OMI TADAHIRO , KIKUYAMA HIROHISA , IZUMI HIROTO , FUTAI KEIICHI
IPC分类号： C23C24/10
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a fluorocarbon film where film deposition is possible even in a part at which the wall face can not be viewed from an inlet, and a fluorocarbon film obtained by the method has resistance to chemicals used for producing a semiconductor device, heat resistance and excellent mechanical strengths as well, and to provide an industrial material using the same. SOLUTION: In the method of producing a fluorocarbon film, a first organic matter is stuck to the surface of a base material 7, and thereafter, a fluorinating gas is made to flow to form a fluorocarbon film on the surface of the base material. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种制造碳氟化合物膜的方法，即使在从入口不能看到壁面的部分中也可以进行成膜，并且通过该方法获得的氟碳膜具有耐用于制造半导体器件的化学品，耐热性和优异的机械强度，以及提供使用该半导体器件的工业材料。解决方案：在制造碳氟化合物膜的方法中，将第一有机物质粘附到基材7的表面，然后使氟化气体流动以在基材的表面上形成碳氟化合物膜材料。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2005051141A Method for manufacturing semiconductor device and semiconductor manufacturing device 有权
标题翻译：制造半导体器件和半导体制造器件的方法
公开(公告)号：JP2005051141A
公开(公告)日：2005-02-24
申请号：JP2003283560
申请日：2003-07-31
申请人： Tadahiro Omi , 忠弘大見
发明人： OMI TADAHIRO , SUGAWA SHIGETOSHI , TERAMOTO AKINOBU , AKAHORI HIROSHI , FUTAI KEIICHI
IPC分类号： H01L21/66 , H01L21/304 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To solve the following problems: when absolutely deuterium-terminating or tritium terminating the surface of a silicon substrate, the completely deuterated tritium solution is necessarily used by dissolving a tritium fluoride in a heavy water, which is unfit for a mass productivity.
SOLUTION: Cleaning the surface of a silicon substrate with the use of the solution with H2O added by hydrogen or deuterium and vibrated by a high frquency of not less than 500 kHz can completely hydrogen terminate the silicon surface without fail. When cleaning, the silicon substrate may be immerged in the solution or the solution can be poured on the surface of the silicon substrate.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了解决以下问题：当绝对氘终止或氚终止硅衬底的表面时，完全氘化的氚溶液必须通过将氚氟化物溶解在不适当的重水中来使用为了大量生产力。解决方案：使用由氢或氘添加的H 2 O 2溶液清洗硅衬底的表面，并通过不低于500kHz的高温度振动，可以完全氢化硅表面终止硅表面。当清洁时，硅衬底可以浸入溶液中，或者溶液可以倒在硅衬底的表面上。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004356114A P-channel power mis field effect transistor and switching circuit 审中-公开
公开(公告)号：JP2004356114A
公开(公告)日：2004-12-16
申请号：JP2003148275
申请日：2003-05-26
申请人： Tadahiro Omi , Yazaki Corp , 忠弘大見 , 矢崎総業株式会社
发明人： OMI TADAHIRO , TERAMOTO AKINOBU , AKAHORI HIROSHI , FUTAI KEIICHI , WATANABE TAKAKUNI
IPC分类号： H01L21/316 , H01L21/28 , H01L21/318 , H01L29/04 , H01L29/51 , H01L29/78
CPC分类号： H01L21/28211 , H01L21/28194 , H01L21/28202 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66734 , H01L29/7813
摘要： PROBLEM TO BE SOLVED: To obtain a performance of equivalence or more in the same size as and at the same cost as an n-channel power MIS field effect transistor. SOLUTION: In the p-channel power MIS field effect transistor formed on a silicon surface having a substantially (110) plane, a withstand voltage between a gate and a source is set to 10V or more, and a silicon surface is flattened or a gate insulating film containing Kr, Ar or Xe is used. COPYRIGHT: (C)2005,JPO&NCIPI

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