专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07000419B1 High-efficiency gas temperature/humidity controlling device and controlling method 失效
标题翻译：高效气体温湿度控制装置及控制方法
公开(公告)号：US07000419B1
公开(公告)日：2006-02-21
申请号：US10070579
申请日：2000-09-11
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Masaki Hirayama , Hideo Hanaoka , Takeshi Honma , Hirokazu Suzuki , Yoshio Yamazaki , Yoshinori Ohkubo
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Masaki Hirayama , Hideo Hanaoka , Takeshi Honma , Hirokazu Suzuki , Yoshio Yamazaki , Yoshinori Ohkubo
IPC分类号： F24F3/16 , F25D2/10
CPC分类号： F24F13/222 , F24F11/41 , F25D21/14
摘要： The present invention has an object to comprise an apparatus for high efficiency gas temperature and humidity adjustment and an adjustment method allowing to elevate the heat exchange efficiency of a cooling coil, reduce the cooling water quantity, lower also the pipe arrangement diameter and water supply pump power, making possible to cut the initial cost and running cost of the air-conditioning system.The apparatus for high efficiency gas temperature and humidity adjustment is characterized by that means for removing condensate water deposited on the cooling coil.
摘要翻译：本发明的目的是提供一种用于高效率气体温度和湿度调节的装置和一种允许提高冷却盘管的热交换效率的调节方法，降低冷却水量，降低管道排放直径和供水泵电力，有可能降低空调系统的初始成本和运行成本。

2. 发明授权

US08573151B2 Microwave plasma processing apparatus, dielectric window for use in the microwave plasma processing apparatus, and method for manufacturing the dielectric window 失效
标题翻译：微波等离子体处理装置，用于微波等离子体处理装置的电介质窗，以及制造电介质窗的方法
公开(公告)号：US08573151B2
公开(公告)日：2013-11-05
申请号：US12393724
申请日：2009-02-26
申请人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto , Yasuyuki Shirai , Masafumi Kitano , Kohei Watanuki , Takaaki Matsuoka , Shigemi Murakawa
发明人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto , Yasuyuki Shirai , Masafumi Kitano , Kohei Watanuki , Takaaki Matsuoka , Shigemi Murakawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , B05D5/06 , B05D3/02
CPC分类号： H01J37/32192 , H01J37/32238
摘要： A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiO2 composition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.
摘要翻译：传统的微波等离子体处理装置即使使用氪（Kr）作为等离子体产生气体，也只能得到与稀有气体例如氩气（Ar）相同的特性水平的氧化膜或氮化物膜）用作等离子体发生气体。因此，代替形成仅具有陶瓷构件的微波等离子体处理装置的介电窗口，可以通过热处理获得化学计量的SiO 2组成的平坦化膜涂覆在陶瓷构件的多个表面中的一个表面上，处理空间，然后热处理，从而形成具有非常平坦和致密表面的平坦化绝缘膜。在平坦化绝缘膜上形成耐腐蚀膜。

3. 发明授权

US06804285B2 Gas supply path structure for a gas laser 有权
标题翻译：气体激光器的供气路径结构
公开(公告)号：US06804285B2
公开(公告)日：2004-10-12
申请号：US09425015
申请日：1999-10-25
申请人： Tadahiro Ohmi , Hiroshi Osawa , Nobuyoshi Tanaka , Kazuhide Ino , Toshikuni Shinohara , Yasuyuki Shirai , Masaki Hirayama
发明人： Tadahiro Ohmi , Hiroshi Osawa , Nobuyoshi Tanaka , Kazuhide Ino , Toshikuni Shinohara , Yasuyuki Shirai , Masaki Hirayama
IPC分类号： H01S322
CPC分类号： H01S3/036
摘要： A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.
摘要翻译：气体供给路径结构形成用于允许激光气体流入或流出一对流体入口和出口11a的流体路径，并且在喉部处将激光气体控制到预定的亚音速。用于控制气体速度的气体供应装置连接到流体入口和气体供给路径结构的流体出口，并且与冷却装置一起构成用于控制激光气体的速度和压力的循环系统流体入口和/或在流体出口处。

4. 发明授权

US07718484B2 Method of forming a dielectic film that contains silicon, oxygen and nitrogen and method of fabricating a semiconductor device that uses such a dielectric film 有权
标题翻译：形成含有硅，氧和氮的介电膜的方法以及制造使用这种电介质膜的半导体器件的方法
公开(公告)号：US07718484B2
公开(公告)日：2010-05-18
申请号：US11979269
申请日：2007-10-31
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Yasuyuki Shirai
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Yasuyuki Shirai
IPC分类号： H01L21/336
CPC分类号： H01L21/28202 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/02315 , H01L21/02332 , H01L21/0234 , H01L21/28211 , H01L21/2822 , H01L21/30604 , H01L21/3144 , H01L21/31662 , H01L21/3185 , H01L21/823462 , H01L27/105 , H01L27/1052 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/12 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66757 , H01L29/78603 , H01L29/78645
摘要： In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.
摘要翻译：在包括多个硅基晶体管或电容器的半导体器件的成膜方法中，预先至少在硅表面的一部分中存在氢，并且成膜方法通过将硅表面暴露于第一惰性气体等离子体。此后，通过在使用第二惰性气体和一种或多种气态分子的混合气体的同时产生等离子体，在硅气体的表面上形成硅化合物层，使得形成至少含有构成气体分子的元素在硅气体的表面上。

5. 发明申请

US20080277715A1 Dielectric film and formation method thereof, semiconductor device, non-volatile semiconductor memory device, and fabrication method for a semiconductor device 有权
标题翻译：电介质膜及其形成方法，半导体器件，非易失性半导体存储器件以及半导体器件的制造方法
公开(公告)号：US20080277715A1
公开(公告)日：2008-11-13
申请号：US11979269
申请日：2007-10-31
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Yasuyuki Shirai
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Yasuyuki Shirai
IPC分类号： H01L29/788 , H01L23/58 , H01L21/469 , H01L21/3205
CPC分类号： H01L21/28202 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/02315 , H01L21/02332 , H01L21/0234 , H01L21/28211 , H01L21/2822 , H01L21/30604 , H01L21/3144 , H01L21/31662 , H01L21/3185 , H01L21/823462 , H01L27/105 , H01L27/1052 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/12 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66757 , H01L29/78603 , H01L29/78645
摘要： In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.
摘要翻译：在包括多个硅基晶体管或电容器的半导体器件的成膜方法中，预先至少在硅表面的一部分中存在氢，并且成膜方法通过将硅表面暴露于第一惰性气体等离子体。此后，通过在使用第二惰性气体和一种或多种气态分子的混合气体的同时产生等离子体，在硅气体的表面上形成硅化合物层，使得形成至少含有构成气体分子的元素在硅气体的表面上。

6. 发明授权

US07439121B2 Dielectric film and method of forming it, semiconductor device, non-volatile semiconductor memory device, and production method for semiconductor device 有权
标题翻译：电介质膜及其形成方法，半导体器件，非易失性半导体存储器件以及半导体器件的制造方法
公开(公告)号：US07439121B2
公开(公告)日：2008-10-21
申请号：US10451925
申请日：2001-12-27
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Yasuyuki Shirai
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Yasuyuki Shirai
IPC分类号： H01L21/33
CPC分类号： H01L21/28202 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/02315 , H01L21/02332 , H01L21/0234 , H01L21/28211 , H01L21/2822 , H01L21/30604 , H01L21/3144 , H01L21/31662 , H01L21/3185 , H01L21/823462 , H01L27/105 , H01L27/1052 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/12 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66757 , H01L29/78603 , H01L29/78645
摘要： In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.
摘要翻译：在包括多个硅基晶体管或电容器的半导体器件的成膜方法中，预先至少在硅表面的一部分中存在氢，并且成膜方法通过将硅表面暴露于第一惰性气体等离子体。此后，通过在使用第二惰性气体和一种或多种气态分子的混合气体的同时产生等离子体，在硅气体的表面上形成硅化合物层，使得形成至少含有构成气体分子的元素在硅气体的表面上。

7. 发明授权

US06847672B2 Laser gas supply path structure in an exposure apparatus 有权
标题翻译：曝光装置中的激光气体供给路径结构
公开(公告)号：US06847672B2
公开(公告)日：2005-01-25
申请号：US09985707
申请日：2001-11-06
申请人： Tadahiro Ohmi , Hiroshi Osawa , Nobuyoshi Tanaka , Kazuhide Ino , Toshikuni Shinohara , Yasuyuki Shirai , Masaki Hirayama
发明人： Tadahiro Ohmi , Hiroshi Osawa , Nobuyoshi Tanaka , Kazuhide Ino , Toshikuni Shinohara , Yasuyuki Shirai , Masaki Hirayama
IPC分类号： H01S5/30 , H01S3/036 , H01S3/22 , G03B27/42 , G03B27/54 , H01S3/03 , H01S3/223
CPC分类号： H01S3/036
摘要： A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.
摘要翻译：气体供给路径结构形成用于允许激光气体流入或流出一对流体入口和出口11a的流体路径，并且在喉部处将激光气体控制到预定的亚音速。用于控制气体速度的气体供应装置连接到流体入口和气体供给路径结构的流体出口，并且与冷却装置一起构成用于控制激光气体的速度和压力的循环系统流体入口和/或在流体出口处。

8. 发明授权

US08241457B2 Plasma processing system, plasma measurement system, plasma measurement method, and plasma control system 失效
标题翻译：等离子体处理系统，等离子体测量系统，等离子体测量方法和等离子体控制系统
公开(公告)号：US08241457B2
公开(公告)日：2012-08-14
申请号：US12058323
申请日：2008-03-28
申请人： Mitsuo Kato , Masaki Sugiyama , Akihiko Hiroe , Tadahiro Ohmi , Masaki Hirayama
发明人： Mitsuo Kato , Masaki Sugiyama , Akihiko Hiroe , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01J37/3299 , H01J37/32192 , H01J37/32935
摘要： A microwave plasma processing system 10 includes: a processing chamber 100 in which a desired process is applied to a target object using a plasma; a susceptor 106 (stage) in the processing chamber 100 to support the target object; a high-frequency power supply 112 supplying high-frequency electric power to the susceptor 106; a capacitor 108a provided to the susceptor 106; and a measurement device 20 measuring voltages at the pair of plates of the capacitor 108a when high-frequency electric power is supplied from the high-frequency power supply 112 to the susceptor 106.
摘要翻译：微波等离子体处理系统10包括：处理室100，其中使用等离子体将期望的处理应用于目标物体; 处理室100中的基座106（阶段）以支撑目标物体; 向基座106供给高频电力的高频电源112; 设置在基座106上的电容器108a; 以及测量装置20，当从高频电源112向基座106提供高频电力时，测量电容器108a的一对板的电压。

9. 发明申请

US20110146910A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20110146910A1
公开(公告)日：2011-06-23
申请号：US12997122
申请日：2009-06-05
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23F1/08 , C23C16/50
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/32238
摘要： Uniformity of a process on a substrate is improved. A plasma processing apparatus including a processing container which is formed of metal and receives a substrate to be plasma-processed, an electromagnetic wave source which supplies an electromagnetic wave required to excite plasma in the processing container, and a plurality of dielectrics, through which the electromagnetic wave supplied from the electromagnetic wave source transmits to the inside of the processing container and which have a part that is exposed to the inside of the processing container, on a lower surface of a lid of the processing container, wherein a metal electrode, which is electrically connected to the lid, is formed on a lower surface of each dielectric, a part of each dielectric exposed between the lower surface of the lid and the metal electrode has a substantially polygonal outline when viewed from the inside of the processing container, the plurality of dielectrics are disposed with vertical angles of the polygonal outlines being adjacent to each other, and a surface wave propagating portion, through which the electromagnetic wave is propagated, is formed on the lower surface of the lid exposed inside the processing container and a lower surface of the metal electrode.
摘要翻译：基板上的工艺的均匀性得到改善。一种等离子体处理装置，包括由金属形成并接收待等离子体处理的基板的处理容器，提供在处理容器中激发等离子体所需的电磁波的电磁波源，以及多个电介质，电磁波源提供的电磁波在处理容器的盖的下表面上传送到处理容器的内部并且具有暴露于处理容器内部的部分，其中金属电极电连接到盖，形成在每个电介质的下表面上，暴露在盖的下表面和金属电极之间的每个电介质的一部分从处理容器的内部观察时具有大致多边形的轮廓，多个电介质被设置成具有彼此相邻的多边形轮廓的垂直角度， d暴露在处理容器内部的盖的下表面和金属电极的下表面上形成电磁波传播的表面波传播部分。

10. 发明申请

US20110121736A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110121736A1
公开(公告)日：2011-05-26
申请号：US12997180
申请日：2009-06-03
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H1/24
CPC分类号： H01J37/32211 , H01J37/32192 , H01J37/32229
摘要： Provided is a plasma processing apparatus having a coaxial waveguide structure in which characteristic impedance of an input side and characteristic impedance of an output side are different. A microwave plasma processing apparatus, which plasma-processes a substrate by exciting a gas by using a microwave, includes: a processing container; a microwave source, which outputs a microwave, a first coaxial waveguide, which transmits the microwave output from the microwave source; and a dielectric plate, which is adjacent to the first coaxial waveguide while facing an inner side of the processing container, and emits the microwave transmitted from the first coaxial waveguide into the processing container. A thickness ratio between an inner conductor and an outer conductor of the first coaxial waveguide is not uniform along a longitudinal direction.
摘要翻译：提供了一种等离子体处理装置，其具有输入侧的特性阻抗和输出侧的特性阻抗不同的同轴波导结构。微波等离子体处理装置，其通过使用微波对气体进行等离子体处理，包括：处理容器; 输出微波的微波源，从微波源传输微波输出的第一同轴波导; 以及电介质板，其与第一同轴波导相邻，同时面向处理容器的内侧，并且将从第一同轴波导传输的微波发射到处理容器中。第一同轴波导管的内导体和外导体之间的厚度比在纵向方向上不均匀。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式