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1. 发明授权

US07935385B2 Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system for supplying fluid and exhausting gas 失效
标题翻译：在其上形成有氧化铬钝化膜的金属材料及其制造方法，以及与流体接触的部件和用于供应流体和排出气体的系统
公开(公告)号：US07935385B2
公开(公告)日：2011-05-03
申请号：US10646855
申请日：2003-08-21
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Nobukazu Ikeda , Eiji Ideta , Akihiro Morimoto , Tetsutaro Ogushi , Takehisa Konishi
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Nobukazu Ikeda , Eiji Ideta , Akihiro Morimoto , Tetsutaro Ogushi , Takehisa Konishi
IPC分类号： B05D3/02 , B05D3/04 , C25D5/50
CPC分类号： C23C8/02 , C23C26/00 , Y10T428/24322 , Y10T428/24355 , Y10T428/31678
摘要： The object of the present invention is to form a chromium-oxide film excellent in corrosion resistance without containing an oxide film of other metal onto the optional metallic material. The chromium-oxide passivation film excellent in corrosion resistance without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for supplying fluid hard in corrosivity in safety is able to be provided. This invention comprises a step of forming the passivation film consisting of a chromium oxide by giving heat treatment in an oxidizing atmosphere after coating chromium on metallic material of which surface roughness (Ra) of a coat surface is not more than 1.5 μm
摘要翻译：本发明的目的是在不含任何金属材料的其它金属的氧化物膜的情况下，形成耐腐蚀性优异的氧化铬膜。能够廉价且短时间地形成不含有其他金属的氧化物膜的耐腐蚀性优异的氧化铬钝化膜，能够提供安全的腐蚀性难以供给流体的流体供给系统。本发明包括以下步骤：在涂覆表面的粗糙度（Ra）不大于1.5μm的金属材料上涂覆铬后，在氧化气氛中进行热处理，形成由氧化铬组成的钝化膜

2. 发明授权

US07501764B2 Fluorescent lamp and method of manufacturing same 失效
标题翻译：荧光灯及其制造方法
公开(公告)号：US07501764B2
公开(公告)日：2009-03-10
申请号：US10546182
申请日：2004-02-18
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Akihiro Morimoto
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Akihiro Morimoto
IPC分类号： H01J61/04 , H01J61/06
CPC分类号： H01J61/0677 , H01J61/0672 , H01J61/16
摘要： A cold cathode fluorescent tube where an electron emitting electrode is sealed in shows much deterioration in the luminance with time, thereby being not adequate for a long time use. The electrode emitting electrode is formed in such a shape that an electric field is not locally concentrated. By mixing a material of high heat conductivity, such as tungsten, as the material for the electron emitting electrode or using helium of high heat conductivity as the sealing gas, a long life of the cold cathode fluorescent tube is achieved.
摘要翻译：其中电子发射电极被密封的冷阴极荧光管显示出随时间的亮度的很大的劣化，从而不能长时间使用。电极发射电极形成为电场不局部集中的形状。通过将诸如钨的高导热性材料作为电子发射电极的材料或使用具有高导热性的氦气作为密封气体，可以实现冷阴极荧光管的长寿命。

3. 发明申请

US20080003441A1 Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system 审中-公开
标题翻译：在其上形成有氧化铬钝化膜的金属材料及其制造方法，以及与流体和系统接触的部件
公开(公告)号：US20080003441A1
公开(公告)日：2008-01-03
申请号：US11878976
申请日：2007-07-30
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Nobukazu Ikeda , Eiji Ideta , Akihiro Morimoto , Tetsutaro Ogushi , Takehisa Konishi
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Nobukazu Ikeda , Eiji Ideta , Akihiro Morimoto , Tetsutaro Ogushi , Takehisa Konishi
IPC分类号： B32B15/04
CPC分类号： C23C8/02 , C23C26/00 , Y10T428/24322 , Y10T428/24355 , Y10T428/31678
摘要： The object of the present invention is to form a chromium-oxide film excellent in corrosion resistance without containing an oxide film of other metal onto the optional metallic material. The chromium-oxide passivation film excellent in corrosion resistance without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for supplying fluid hard in corrosivity in safety is able to be provided. This invention comprises a step of forming the passivation film consisting of a chromium oxide by giving heat treatment in an oxidizing atmosphere after coating chromium on metallic material of which surface roughness (Ra) of a coat surface is not more than 1.5 μm
摘要翻译：本发明的目的是在不含任何金属材料的其它金属的氧化物膜的情况下，形成耐腐蚀性优异的氧化铬膜。能够廉价且短时间地形成不含有其他金属的氧化物膜的耐腐蚀性优异的氧化铬钝化膜，能够提供安全的腐蚀性难以供给流体的流体供给系统。本发明包括以下步骤：在涂覆表面的表面粗糙度（Ra）不大于1.5μm的金属材料上涂覆铬之后，在氧化气氛中进行热处理，形成由氧化铬组成的钝化膜

4. 发明授权

US07103990B2 Rotary silicon wafer cleaning apparatus 有权
标题翻译：旋转硅片清洗装置
公开(公告)号：US07103990B2
公开(公告)日：2006-09-12
申请号：US10498800
申请日：2003-09-11
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Takumi Fujita , Yukio Minami , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Takumi Fujita , Yukio Minami , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada
IPC分类号： F26B5/08
CPC分类号： H01L21/67034 , H01L21/02052
摘要： It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments.According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.05%, a mixed gas supply pipe coupled to a gas mixer of the afore-mentioned gas supply panel at one end, a mixed gas heating device to heat the mixed gas in the afore-mentioned gas supply pipe, and a hydrogen radical formation apparatus equipped with a platinum coating film to form hydrogen radical at the gas contacting part where to a high temperature gas heated with the afore-mentioned mixed gas heating device touches, thus to gush out the mixed gas containing hydrogen radical formed with the afore-mentioned radical formation apparatus onto the rotating silicon wafer after cleaning is completed.
摘要翻译：本发明的目的是提供一种旋转型硅晶片清洁装置，以在化学和纯净水清洗处理完成之后通过在硅晶片上提供更好的氢终止来进一步提高硅晶片的稳定性。根据本发明，旋转型硅晶片清洗装置在壳体内部具有硅晶片支撑/旋转驱动机构，用于在后期化学清洗时用纯水清洗硅晶片，在外表面上进行干燥和氢终止处理通过安装硅晶片干燥装置来执行硅晶片，所述硅晶片干燥装置包括附接到壳体的气体供应板，以供应氢气和含有大于0.05％的氢气的惰性气体的混合气体，混合气体供应一端连接上述气体供给面板的气体混合器的管道，将上述气体供给管内的混合气体加热的混合气体加热装置以及配备有铂镀膜的氢自由基形成装置，在与上述混合气体加热装置加热的高温气体接触的气体接触部分处形成氢自由基，从而喷出混合气体在完成清洁之后，将上述自由基形成装置形成的氢基团固定在旋转的硅晶片上。

5. 发明授权

US5530283A Lead frame and lead frame material 失效
标题翻译：引线框架和引线框架材料
公开(公告)号：US5530283A
公开(公告)日：1996-06-25
申请号：US518529
申请日：1995-08-23
申请人： Tadahiro Ohmi , Nobukazu Ikeda , Michio Yamaji , Tsutomu Shinohara , Akihiro Morimoto , Yasuyuki Shirai
发明人： Tadahiro Ohmi , Nobukazu Ikeda , Michio Yamaji , Tsutomu Shinohara , Akihiro Morimoto , Yasuyuki Shirai
IPC分类号： H01L23/50 , H01L23/495
CPC分类号： H01L23/49582 , H01L2224/45124 , H01L2224/45144 , H01L24/45 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01322
摘要： An object of the present invention is to provide a lead frame and a material for lead frame which insure excellent bonding and enables substantial reduction of time for production because such processes as plating are not required and furthermore are excellent in abration resistance.The present invention is characterized in that a silver layer having a construction where amplitude of a refracted ray refracted on the (200) surface is 1/3 or more of the amplitude of refracted X ray refracted on the (111) surface comprises an outer lead section of the base material for the lead frame. The base material is preferably copper, copper-alloy, iron, or iron alloy. The silver layer is formed, for instance, by means of silver plating, and the thickness is preferably in a range from 8 m to 30 m. An intermediate layer may be provided between a surface of the base material and the silver layer.
摘要翻译：本发明的目的是提供一种引线框架和引线框架材料，其确保良好的接合，并且能够显着缩短生产时间，因为不需要电镀等工艺，并且耐磨性也优异。本发明的特征在于，具有在（200）表面折射的折射线的振幅为（111）面折射的折射X射线的振幅的1/3以上的结构的银层包括外引线用于引线框架的基材的截面。基材优选为铜，铜合金，铁或铁合金。银层例如通过镀银形成，并且厚度优选在8μm至30μm的范围内。可以在基材的表面和银层之间设置中间层。

6. 发明授权

US08137787B1 Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system for supplying fluid and exhausting gas 失效
标题翻译：在其上形成有氧化铬钝化膜的金属材料及其制造方法，以及与流体接触的部件和用于供应流体和排出气体的系统
公开(公告)号：US08137787B1
公开(公告)日：2012-03-20
申请号：US09889269
申请日：2000-01-13
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Nobukazu Ikeda , Eiji Ideta , Akihiro Morimoto , Tetsutaro Ogushi , Takehisa Konishi
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Nobukazu Ikeda , Eiji Ideta , Akihiro Morimoto , Tetsutaro Ogushi , Takehisa Konishi
IPC分类号： B32B15/04 , B32B9/00 , B32B19/00
CPC分类号： C23C8/02 , C23C26/00 , Y10T428/24322 , Y10T428/24355 , Y10T428/31678
摘要： The object of the present invention is to form a chromium-oxide film, excellent in corrosion resistance, without containing an oxide film of other metal onto the metallic material. The chromium-oxide passivation film, excellent in corrosion resistance, without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for safely supplying fluid with hard corrosivity is able to be provided. One step of forming the passivation film consisting of a chromium oxide layer by giving heat treatment, in an oxidizing atmosphere, after coating chromium on the metallic material having a surface roughness (Ra) not more than 1.5 μm.
摘要翻译：本发明的目的是形成耐腐蚀性优异的氧化铬膜，而不含金属材料上的其它金属的氧化膜。可以廉价且短时间地形成不含有其它金属的氧化物膜的耐腐蚀性优异的氧化铬钝化膜，能够提供用于安全地供给具有硬腐蚀性的流体的流体供给系统。在表面粗糙度（Ra）不大于1.5μm的金属材料上涂覆铬后，在氧化气氛中进行热处理，形成由氧化铬层构成的钝化膜的一个步骤。

7. 发明申请

US20060174977A1 Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system for supplying fluid and exhausting gas 失效
标题翻译：在其上形成有氧化铬钝化膜的金属材料及其制造方法，以及与流体接触的部件和用于供应流体和排出气体的系统
公开(公告)号：US20060174977A1
公开(公告)日：2006-08-10
申请号：US10646855
申请日：2003-08-21
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Nobukazu Ikeda , Eiji Ideta , Akihiro Morimoto , Tetsutaro Ogushi , Takehisa Konishi
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Nobukazu Ikeda , Eiji Ideta , Akihiro Morimoto , Tetsutaro Ogushi , Takehisa Konishi
IPC分类号： C23C22/24 , C23C8/80
CPC分类号： C23C8/02 , C23C26/00 , Y10T428/24322 , Y10T428/24355 , Y10T428/31678
摘要： The object of the present invention is to form a chromium-oxide film excellent in corrosion resistance without containing an oxide film of other metal onto the optional metallic material. The chromium-oxide passivation film excellent in corrosion resistance without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for supplying fluid hard in corrosivity in safety is able to be provided. This invention comprises a step of forming the passivation film consisting of a chromium oxide by giving heat treatment in an oxidizing atmosphere after coating chromium on metallic material of which surface roughness (Ra) of a coat surface is not more than 1.5 μm
摘要翻译：本发明的目的是在不含任何金属材料的其它金属的氧化物膜的情况下，形成耐腐蚀性优异的氧化铬膜。能够廉价且短时间地形成不含有其他金属的氧化物膜的耐腐蚀性优异的氧化铬钝化膜，能够提供安全的腐蚀性难以供给流体的流体供给系统。本发明包括以下步骤：在涂覆表面的表面粗糙度（Ra）不大于1.5μm的金属材料上涂覆铬之后，在氧化气氛中进行热处理，形成由氧化铬组成的钝化膜

8. 发明申请

US20050126030A1 Rotary silicon wafer cleaning apparatus 有权
标题翻译：旋转硅片清洗装置
公开(公告)号：US20050126030A1
公开(公告)日：2005-06-16
申请号：US10498800
申请日：2003-09-11
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Takumi Fujita , Yukio Minami , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Takumi Fujita , Yukio Minami , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada
IPC分类号： H01L21/304 , F26B17/24 , F26B17/30 , H01L20060101 , H01L21/00 , H01L21/02 , H01L21/30 , H01L21/302
CPC分类号： H01L21/67034 , H01L21/02052
摘要： It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments. According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.05%, a mixed gas supply pipe coupled to a gas mixer of the afore-mentioned gas supply panel at one end, a mixed gas heating device to heat the mixed gas in the afore-mentioned gas supply pipe, and a hydrogen radical formation apparatus equipped with a platinum coating film to form hydrogen radical at the gas contacting part where to a high temperature gas heated with the afore-mentioned mixed gas heating device touches, thus to gush out the mixed gas containing hydrogen radical formed with the afore-mentioned radical formation apparatus onto the rotating silicon wafer after cleaning is completed.
摘要翻译：本发明的目的是提供一种旋转型硅晶片清洁装置，以在化学和纯净水清洗处理完成之后通过在硅晶片上提供更好的氢终止来进一步提高硅晶片的稳定性。根据本发明，旋转型硅晶片清洗装置在壳体内部具有硅晶片支撑/旋转驱动机构，用于在后期化学清洗时用纯水清洗硅晶片，在外表面上进行干燥和氢终止处理通过安装硅晶片干燥装置来执行硅晶片，所述硅晶片干燥装置包括附接到壳体的气体供应板，以供应氢气和含有大于0.05％的氢气的惰性气体的混合气体，混合气体供应一端连接上述气体供给面板的气体混合器的管道，将上述气体供给管内的混合气体加热的混合气体加热装置以及配备有铂镀膜的氢自由基形成装置，在与上述混合气体加热装置加热的高温气体接触的气体接触部分处形成氢自由基，从而喷出混合气体在完成清洁之后，将上述自由基形成装置形成的氢基团固定在旋转的硅晶片上。

9. 发明申请

US20060278162A1 Vacuum treatment apparatus and vapor deposition apparatus 审中-公开
标题翻译：真空处理装置和蒸镀装置
公开(公告)号：US20060278162A1
公开(公告)日：2006-12-14
申请号：US10568706
申请日：2004-08-19
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Akihiro Morimoto
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Akihiro Morimoto
IPC分类号： C23C16/00
CPC分类号： C23C14/564
摘要： It has been found that an organic component is emitted from a member such as a crucible or a gasket constituting an apparatus for vacuum treatment and an element is contaminated with said organic component emitted, and, as a result, members of the apparatus for vacuum treatment are subjected to a treatment for reducing the emission of an organic component. For example, a crucible is made from a material having a reduced catalytic activity to a material for use in the vapor deposition in question and a gasket is used after a treatment for reducing the bleeding of an organic component or is made from a material containing a reduced amount of an organic component.
摘要翻译：已经发现，有机组分从诸如坩埚或构成真空处理装置的垫圈的构件发射，并且元件被所发射的有机组分污染，结果是真空处理装置的构件经受用于减少有机组分的发射的处理。例如，坩埚由对所使用的气相沉积中使用的材料具有降低的催化活性的材料制成，并且在用于减少有机组分的渗出的处理之后使用垫圈，或者由含有减少有机成分的量。

10. 发明申请

US20060097641A1 Fluorescent lamp and method of manufacturing same 失效
公开(公告)号：US20060097641A1
公开(公告)日：2006-05-11
申请号：US10546182
申请日：2004-02-18
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Akihiro Morimoto
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Akihiro Morimoto
IPC分类号： H01J61/04 , H01J61/06
CPC分类号： H01J61/0677 , H01J61/0672 , H01J61/16
摘要： A cold cathode fluorescent tube where an electron emitting electrode is sealed in shows much deterioration in the luminance with time, thereby being not adequate for a long time use. The electrode emitting electrode is formed in such a shape that an electric field is not locally concentrated. By mixing a material of high heat conductivity, such as tungsten, as the material for the electron emitting electrode or using helium of high heat conductivity as the sealing gas, a long life of the cold cathode fluorescent tube is achieved.

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