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1. 发明申请

US20130017686A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20130017686A1
公开(公告)日：2013-01-17
申请号：US13620497
申请日：2012-09-14
申请人： Tadahiro OHMI , Kazuhide INO , Takahiro ARAKAWA
发明人： Tadahiro OHMI , Kazuhide INO , Takahiro ARAKAWA
IPC分类号： H01L21/3065 , C23C16/511
CPC分类号： H01L22/10 , H01J37/32192 , H01L21/67017 , H01L21/67069
摘要： A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4≦D≦1.3×n/4 (n being a natural number).
摘要翻译：一种等离子体处理装置，用于使用等离子体处理待处理物体。该装置包括：处理室，其限定用于容纳待处理物体和处理气体的处理腔;微波辐射天线，具有用于辐射微波的微波辐射表面，以激发处理空腔中的等离子;以及电介质本体设置为与微波辐射表面相对，其中以微波的波长表示的微波辐射表面和远离微波辐射表面的电介质体的表面之间的距离D为距离单位确定在满足不等式0.7×n / 4＆nlE; D＆nlE; 1.3×n / 4（n为自然数）的范围内。

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