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1. 发明授权

US09379312B2 Magnetoresistive effect element and magnetic random access memory using the same 有权
标题翻译：磁阻效应元件和磁性随机存取存储器使用相同
公开(公告)号：US09379312B2
公开(公告)日：2016-06-28
申请号：US13518974
申请日：2010-12-14
申请人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
发明人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
IPC分类号： H01L29/82 , H01L43/02 , B82Y25/00 , G11C11/14 , H01F10/32 , H01L43/08 , H01L43/10 , G11C11/16 , G11C19/08 , H01L27/22
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/14 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , G11C19/0841 , G11C2213/74 , G11C2213/79 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.
摘要翻译：本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。畴壁运动层由具有垂直磁各向异性的铁磁材料制成。间隔层形成在畴壁运动层上，由非磁性材料制成。参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值。

2. 发明申请

US20130175645A1 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY USING THE SAME 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US20130175645A1
公开(公告)日：2013-07-11
申请号：US13518974
申请日：2010-12-14
申请人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
发明人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/14 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , G11C19/0841 , G11C2213/74 , G11C2213/79 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.
摘要翻译：本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。畴壁运动层由具有垂直磁各向异性的铁磁材料制成。间隔层形成在畴壁运动层上，由非磁性材料制成。参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值。

3. 发明授权

US08830735B2 Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film 有权
标题翻译：磁存储器，包括具有垂直磁各向异性膜的数据记录层的存储单元
公开(公告)号：US08830735B2
公开(公告)日：2014-09-09
申请号：US13304083
申请日：2011-11-23
申请人： Eiji Kariyada , Katsumi Suemitsu , Hironobu Tanigawa , Kaoru Mori , Tetsuhiro Suzuki , Kiyokazu Nagahara , Yasuaki Ozaki , Norikazu Ohshima
发明人： Eiji Kariyada , Katsumi Suemitsu , Hironobu Tanigawa , Kaoru Mori , Tetsuhiro Suzuki , Kiyokazu Nagahara , Yasuaki Ozaki , Norikazu Ohshima
IPC分类号： G11B5/66 , G11C11/16 , G01R33/09 , G11C11/02 , G11C11/14 , G11C11/15
CPC分类号： H01L43/10 , G01R33/091 , G01R33/098 , G11C11/02 , G11C11/14 , G11C11/15 , G11C11/161 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.
摘要翻译：磁存储器包括：具有垂直磁各向异性的磁化固定层，磁化固定层的磁化方向固定; 层间电介质; 形成在磁化固定层和层间电介质的上表面上的底层; 以及形成在下层的上表面上并具有垂直磁各向异性的数据记录层。底层包括：第一磁性底层; 以及形成在第一磁性底层上的非磁性底层。形成第一磁性底层，使得第一磁性底层在形成于层间电介质上的第一磁性底层的一部分中不具有面内的磁各向异性。

4. 发明申请

US20120135275A1 MAGNETIC MEMORY INCLUDING MEMORY CELLS INCORPORATING DATA RECORDING LAYER WITH PERPENDICULAR MAGNETIC ANISOTROPY FILM 有权
标题翻译：磁记录，包括记录数据记录层，带有全息磁性膜片
公开(公告)号：US20120135275A1
公开(公告)日：2012-05-31
申请号：US13304083
申请日：2011-11-23
申请人： Eiji Kariyada , Katsumi Suemitsu , Hironobu Tanigawa , Kaoru Mori , Tetsuhiro Suzuki , Kiyokazu Nagahara , Yasuaki Ozaki , Norikazu Ohshima
发明人： Eiji Kariyada , Katsumi Suemitsu , Hironobu Tanigawa , Kaoru Mori , Tetsuhiro Suzuki , Kiyokazu Nagahara , Yasuaki Ozaki , Norikazu Ohshima
IPC分类号： G11B5/66
CPC分类号： H01L43/10 , G01R33/091 , G01R33/098 , G11C11/02 , G11C11/14 , G11C11/15 , G11C11/161 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.
摘要翻译：磁存储器包括：具有垂直磁各向异性的磁化固定层，磁化固定层的磁化方向固定; 层间电介质; 形成在磁化固定层和层间电介质的上表面上的底层; 以及形成在下层的上表面上并具有垂直磁各向异性的数据记录层。底层包括：第一磁性底层; 以及形成在第一磁性底层上的非磁性底层。形成第一磁性底层，使得第一磁性底层在形成于层间电介质上的第一磁性底层的一部分中不具有面内的磁各向异性。

5. 发明授权

US08524347B2 Optical information recording medium and method of manufacturing the same 失效
标题翻译：光信息记录介质及其制造方法
公开(公告)号：US08524347B2
公开(公告)日：2013-09-03
申请号：US13125694
申请日：2009-08-18
申请人： Eiji Kariyada
发明人： Eiji Kariyada
IPC分类号： G11B7/24
CPC分类号： G11B7/263 , G11B7/24038 , G11B7/256
摘要： Provided is a manufacturing method of an optical information storage medium irradiated with laser beams to optically record or reproduce information. A method of manufacturing an optical information storage medium according to the present invention includes forming asperity patterns for guiding laser beams on both sides of a second substrate 12, forming information recording layers 41 and 42 in the asperity patterns, bonding a first substrate 11 to a surface where one information storage layer 41 is formed in the second substrate 12 with an ultraviolet curable resin 22 formed therebetween, and bonding a third substrate 13 to a surface where another information storage layer 42 is formed in the second substrate 12 with an ultraviolet curable resin 22 formed therebetween.
摘要翻译：提供了用激光束照射光学记录或再现信息的光学信息存储介质的制造方法。根据本发明的光学信息存储介质的制造方法包括形成用于在第二基板12的两侧引导激光束的凹凸图案，以凹凸图案形成信息记录层41和42，将第一基板11接合到在第二基板12中形成有一个信息存储层41的表面，其间形成有紫外线固化树脂22，并且用第二基板12将第三基板13接合到第二基板12中的另一个信息存储层42的表面， 22。

6. 发明授权

US06875488B2 Optical information recording medium 有权
标题翻译：光信息记录介质
公开(公告)号：US06875488B2
公开(公告)日：2005-04-05
申请号：US10408441
申请日：2003-04-08
申请人： Tatsunori Ide , Eiji Kariyada , Shuichi Ohkubo
发明人： Tatsunori Ide , Eiji Kariyada , Shuichi Ohkubo
IPC分类号： G11B7/258 , B32B3/02 , C23C14/18 , G11B7/24 , G11B7/243
CPC分类号： G11B7/258 , C23C14/185 , G11B7/2403 , G11B7/24038 , G11B7/24062 , G11B7/243 , G11B7/2542 , Y10T428/21
摘要： An optical information recording medium is provided that records and reproduces information by means of laser beams irradiated from the side of the light transmission layer. The optical information recording medium provides a large capacity and a high degree of reliability and is inexpensive. At least a reflective film and a light transmission layer are formed, in the presented order, on the information recording surface of the support substrate. Information is recorded and/or reproduced by using the laser beam irradiated from the side of the light transmission layer. The reflective film, which is made of an alloy containing Ni and Cr as main components, has a thickness of 20 nm or more to 80 nm or less.
摘要翻译：提供一种光学信息记录介质，其通过从光透射层侧照射的激光束记录和再现信息。光信息记录介质提供大容量和高可靠性并且便宜。在所述支撑基板的信息记录表面上，以所述顺序形成至少一反射膜和透光层。通过使用从光透射层侧照射的激光束来记录和/或再现信息。由含有Ni和Cr作为主要成分的合金制成的反射膜的厚度为20nm以上至80nm以下。

7. 发明授权

US08481339B2 Magnetic memory and manufacturing method thereof 有权
标题翻译：磁记忆及其制造方法
公开(公告)号：US08481339B2
公开(公告)日：2013-07-09
申请号：US13360599
申请日：2012-01-27
申请人： Kiyokazu Nagahara , Eiji Kariyada
发明人： Kiyokazu Nagahara , Eiji Kariyada
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , H01L43/12
摘要： A magnetic memory has a magnetic recording layer, a reference layer connected via a non-magnetic layer to the magnetic recording layer, first and second magnetization pinning layers disposed below the magnetic recording layer. The magnetic recording layer and the reference layer have a perpendicular magnetic anisotropy. The magnetic recording layer has a magnetization reversal region having a reversible magnetization and overlapping the difference layer, a first magnetization pinned region connected to a first boundary of the magnetization reversal region with the direction of the magnetization being fixed in a first direction, and a second magnetization pinned region connected to a second boundary of the magnetization reversal region with the direction of magnetization being fixed in a second direction anti-parallel to the first direction. The first and the second magnetization pinning layers fix the magnetization of the first and the second magnetization pinned regions.
摘要翻译：磁存储器具有磁记录层，通过非磁性层连接到磁记录层的参考层，设置在磁记录层下方的第一和第二磁化锁定层。磁记录层和参考层具有垂直的磁各向异性。磁记录层具有具有可逆磁化的磁化反转区域，与差分层重叠，第一磁化固定区域与磁化反转区域的第一边界连接，磁化方向固定在第一方向，第二磁化固定区域磁化钉扎区域连接到磁化反转区域的第二边界，其中磁化方向在与第一方向反平行的第二方向上被固定。第一和第二磁化钉扎层固定第一和第二磁化固定区域的磁化。

8. 发明申请

US20070231529A1 Optical information recording medium suppressing sulfuration of silver 审中-公开
标题翻译：光学信息记录介质抑制银的硫化
公开(公告)号：US20070231529A1
公开(公告)日：2007-10-04
申请号：US11723829
申请日：2007-03-22
申请人： Eiji Kariyada , Shuichi Ohkubo
发明人： Eiji Kariyada , Shuichi Ohkubo
IPC分类号： B32B3/02
CPC分类号： G11B7/257 , G11B7/24038 , G11B7/243 , G11B7/2534 , G11B7/2578 , G11B7/259 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25715
摘要： A phase-change optical disk includes a recording film, a reflection film and a dielectric film including oxide of at least one element selected from a first group consisting of niobium and zinc as the principal ingredient thereof and oxide of at least one element selected from a second group consisting of aluminum, tantalum, silicon, cerium and hafnium. The composition ratio of the oxide of the at least one element selected from the second group in the dielectric film is between 10 mol % and 45 mol %. The oxide film prevents sulfuration of the recording film including Ag.
摘要翻译：相变光盘包括记录膜，反射膜和包含选自由铌和锌组成的第一组中的至少一种元素作为其主要成分的氧化物的电介质膜和选自以下的至少一种元素的氧化物：第二组由铝，钽，硅，铈和铪组成。选自电介质膜中的第二组的至少一种元素的氧化物的组成比为10摩尔％〜45摩尔％。氧化物膜防止包含Ag的记录膜的硫化。

9. 发明授权

US08716820B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US08716820B2
公开(公告)日：2014-05-06
申请号：US13609230
申请日：2012-09-10
申请人： Katsumi Suemitsu , Eiji Kariyada
发明人： Katsumi Suemitsu , Eiji Kariyada
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/226 , H01L43/08
摘要： A memory includes an underlying layer of a ferromagnetic body, a first nonmagnetic layer on the underlying layer, a data memorizing layer laid on the first nonmagnetic layer and made of a ferromagnetic body having perpendicular magnetic anisotropy, a reference layer coupled through a second nonmagnetic layer with the data memorizing layer, and first and second magnetization fixed layers laid underneath the underlying layer to come into contact with the underlying layer. The data memorizing layer includes a magnetization liberalized region having reversible magnetization, and overlapping with the reference layer, a first magnetization fixed region coupled with an end of the magnetization liberalized region, and having a magnetization direction fixed to +z direction by the first magnetization fixed layer, and a second magnetization fixed region coupled with a different end of the magnetization liberalized region, and having a magnetization direction fixed to −z direction by the second magnetization fixed layer.
摘要翻译：存储器包括铁磁体的下层，下层上的第一非磁性层，位于第一非磁性层上并由具有垂直磁各向异性的铁磁体构成的数据存储层，通过第二非磁性层耦合的参考层数据存储层，第一和第二磁化固定层铺设在下层之下，与下层相接触。数据存储层包括具有可逆磁化并与参考层重叠的磁化自由化区域，与磁化自由化区域的一端耦合的第一磁化固定区域，并且具有通过第一磁化固定的磁化方向固定到+ z方向以及与磁化自由化区域的不同端部耦合的第二磁化固定区域，并且具有由第二磁化固定层固定在-z方向的磁化方向。

10. 发明申请

US20070104920A1 Optical disk including a sulfuration suppressing dielectric film 有权
标题翻译：含有硫化抑制电介质膜的光盘
公开(公告)号：US20070104920A1
公开(公告)日：2007-05-10
申请号：US11590793
申请日：2006-11-01
申请人： Shuichi Ohkubo , Eiji Kariyada
发明人： Shuichi Ohkubo , Eiji Kariyada
IPC分类号： B32B3/02
CPC分类号： G11B7/2578 , G11B7/259 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25715 , G11B2007/25716 , Y10T428/21
摘要： A phase change optical disk includes a first dielectric film, a recording film, a second dielectric film and a reflecting film which are consecutively formed on a substrate. The second dielectric film includes therein a zinc sulfide at a rate of 10 to 40 mol % and a tantalum oxide at a rate of 20 to 50 mol %, for preventing sulfuration of Ag in the reflecting film.
摘要翻译：相变光盘包括在基板上连续形成的第一电介质膜，记录膜，第二电介质膜和反射膜。第二电介质膜中含有10〜40摩尔％的硫化锌和20〜50摩尔％的氧化钽，以防止反应膜中的Ag的硫化。

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