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1. 发明申请

WO2013110994A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2013110994A1
公开(公告)日：2013-08-01
申请号：PCT/IB2013/000072
申请日：2013-01-23
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , KIMURA, Keisuke , KAMEYAMA, Satoru , KOYAMA, Masaki , AOI, Sachiko
发明人： KIMURA, Keisuke , KAMEYAMA, Satoru , KOYAMA, Masaki , AOI, Sachiko
IPC分类号： H01L29/739 , H01L29/861 , H01L29/08
CPC分类号： H01L27/0664 , H01L29/0646 , H01L29/0834 , H01L29/407 , H01L29/7395 , H01L29/7397 , H01L29/861
摘要： When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross- section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.
摘要翻译：当从上方观察半导体器件的半导体衬底时，隔离区域，IGBT区域和二极管区域都彼此相邻地形成。在隔离区域中形成连接到体区和阳极区的深区。在半导体衬底内部跨越隔离区域，IGBT区域和二极管区域形成漂移区域。在半导体衬底的下表面上暴露的区域中形成有跨越隔离区域，IGBT区域和二极管区域以及位于二极管区域中的阴极区域的集电极区域。在二极管区域中，集电极区域和阴极区域之间的边界处于跨越隔离区域和二极管区域之间的边界的横截面中，并且分隔隔离区域和二极管区域。形成在隔离区域的集电极区域的掺杂浓度比IGBT区域的集电极区域高。

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