专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2642403B2 失效
公开(公告)号：JP2642403B2
公开(公告)日：1997-08-20
申请号：JP11670488
申请日：1988-05-13
申请人： TOSHIBA KK
发明人： NISHIKAWA YUKIE , TSUBURAI YASUHIKO , KOKUBU YOSHIHIRO
IPC分类号： H01L21/205 , H01S5/00 , H01S3/18

2. 发明专利

JPS646159B2 失效
公开(公告)号：JPS646159B2
公开(公告)日：1989-02-02
申请号：JP543183
申请日：1983-01-17
申请人： FUJII TAKASHI , TOSHIBA KK
发明人： FUJII TAKASHI , FUKUDA TSUGUO , KOKUBU YOSHIHIRO , HIRANO HITOSHI
IPC分类号： C01B33/12 , C30B7/00 , C30B29/18

3. 发明专利

JP2795885B2 失效
公开(公告)号：JP2795885B2
公开(公告)日：1998-09-10
申请号：JP7913889
申请日：1989-03-30
申请人： TOSHIBA KK
发明人： KOKUBU YOSHIHIRO , NISHIKAWA YUKIE
IPC分类号： H01L33/30 , H01L33/40 , H01L33/56 , H01L33/00

4. 发明专利

JPH0630339B2 失效
公开(公告)号：JPH0630339B2
公开(公告)日：1994-04-20
申请号：JP14600684
申请日：1984-07-16
申请人： SHINGIJUTSU JIGYODAN , NISHIZAWA JUNICHI , TOSHIBA KK
发明人： NISHIZAWA JUNICHI , KOKUBU YOSHIHIRO
IPC分类号： H01L21/205 , C30B25/10 , H01L21/268 , H01L21/263

5. 发明专利

JP2642404B2 失效
公开(公告)号：JP2642404B2
公开(公告)日：1997-08-20
申请号：JP11670588
申请日：1988-05-13
申请人： TOSHIBA KK
发明人： TSUBURAI YASUHIKO , KOKUBU YOSHIHIRO
IPC分类号： H01L21/205 , H01S5/00 , H01S3/18

6. 发明专利

JPH0361638B2 失效
公开(公告)号：JPH0361638B2
公开(公告)日：1991-09-20
申请号：JP7656484
申请日：1984-04-18
申请人： SHINGIJUTSU JIGYODAN , NISHIZAWA JUNICHI , TOSHIBA KK
发明人： NISHIZAWA JUNICHI , KOKUBU YOSHIHIRO
IPC分类号： C30B25/02 , C30B29/40 , H01L21/205

7. 发明专利

JPH0361637B2 失效
公开(公告)号：JPH0361637B2
公开(公告)日：1991-09-20
申请号：JP7656384
申请日：1984-04-18
申请人： SHINGIJUTSU JIGYODAN , NISHIZAWA JUNICHI , TOSHIBA KK
发明人： NISHIZAWA JUNICHI , KOKUBU YOSHIHIRO
IPC分类号： C30B25/02 , C30B29/40 , H01L21/205

8. 发明专利

JPS59121192A PREPARATION OF SINGLE CRYSTAL OF III-V GROUP COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPS59121192A
公开(公告)日：1984-07-13
申请号：JP22775182
申请日：1982-12-28
申请人： TOSHIBA KK
发明人： MATSUMURA SADAO , KOKUBU YOSHIHIRO
IPC分类号： C30B15/20 , C30B27/02 , C30B29/40 , H01L21/208
摘要： PURPOSE:To improve the yield and reproducibility in the preparation of the titled single crystal containing volatile component by the direct-synthesis direct-pulling process or the liquid-encapsulated pulling process, by detecting the resistance of the molten liquid with one or more pairs of electrodes, and controlling the pulling conditions of the crystal according to the detected resistance. CONSTITUTION:In the preparation of semi-insulating GaAs single crystal by the direct- synthesis direct-pulling process, Ga and As are charged in the crucible 2 in a pressure vessel 1 using larger amount of As than the stoichiometric value, and are covered with a sealant 3 such as B2O3. The crucible is heated with the heater 5 to form a GaAs compound and melt the compound. For example, W-electrode pair 7 are put into a pair of cells 6 made of thermally decomposed boron nitride and filled with molten Ga as a nonvolatile electrically conductive liquid, and the cells are inserted into the crucible 2 at a definite depth interposing a gap between the bottom of the crucible. The change in the electrical current between the electrodes is detected by the detector 9, and when the current is decreased below a preset level, the seed crystal 10 is pulled up, and when the current is increased above a preset level, the pulling of the seed crystal is stopped to obtain the grown crystal 11.

9. 发明专利

JP2793239B2 失效
公开(公告)号：JP2793239B2
公开(公告)日：1998-09-03
申请号：JP8358789
申请日：1989-03-31
申请人： TOSHIBA KK
发明人： ASHIZAWA YASUO , NODA TAKAO , KOKUBU YOSHIHIRO
IPC分类号： H01L21/205 , C30B29/42

10. 发明专利

JPS5992993A PRODUCTION OF SINGLE CRYSTAL 失效
公开(公告)号：JPS5992993A
公开(公告)日：1984-05-29
申请号：JP20042182
申请日：1982-11-17
申请人： TOSHIBA KK
发明人： FUJII TAKASHI , USHIZAWA JISABUROU , KOKUBU YOSHIHIRO , WATANABE MASAYUKI
IPC分类号： C30B15/00 , C30B27/02 , C30B29/40 , H01L21/208
摘要： PURPOSE:To prevent the growth of polycrystals and improve the yield of a single crystal, by heat-treating a raw material melt containing an absorbent in the upper part thereof at a higher temperature than the melting temperature of the raw material, and producing the resultant single crystal by the pulling up method. CONSTITUTION:A crystal raw material, e.g. GaP, and an absorbent, e.g. B2O3, are placed in a quartz crucible, and (i) the crucible is heated at a temperature 21 a little higher than the melting temperature of the crystal raw material and kept at the temperature 21 for about 1hr to stabilize the resultant melt (a period BC). (ii) The crucible is then heated at a given temperature 23 within (melting temperature of the raw material)-(melting temperature of the raw material +200 deg.C) range and kept at the temperature for 5-90min (a period DE). (iii) The temperature of the melt is then reduced to a temperature 25 suitable for seeding of crystals and kept at the temperature for a given time to stabilize the melt (a period FG), and (iv) the aimed single crystals are grown by the conventional method.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式