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2. 发明专利

JPS5753940A Chemical evaporation apparatus 失效
标题翻译：空值
公开(公告)号：JPS5753940A
公开(公告)日：1982-03-31
申请号：JP12884080
申请日：1980-09-17
申请人： Toshiba Corp
发明人： SHUDO TOSHIAKI
IPC分类号： H01L21/223 , C23C16/44 , C23C16/455 , H01L21/22 , H01L21/31
CPC分类号： C23C16/455
摘要： PURPOSE:To eliminate the replacement and washing of nozzles and to improve workability in a CVD device, by providing a plurality of the nozzles supplying desired mixed gas to wafers and differentiating the kinds of doping gases which are to be introduced to the nozzles. CONSTITUTION:The desired mixed gas is introduced in the apparatus 20 wherein the wafers are placed on a hot plate 10, and blown out of the plurality of the nozzles arranged in parallel, and a CVD film is formed. The mixed gas comprises O2 gas, N2 carrier gas, N2 gas, SiH4 gas, and doping gases and is introduced to. e.g., two nozzles 11a and 11b, with the flow amount of each gas being regulated. The kinds of the doping gases are different for each nozzle. For example, the N type doping gas is used for one nozzle, and the P type doping gas is used for the other. the suppling (operating) nozzle euis replaced based on the kind of the film to be formed. In this apparatus, the working process, wherein the different types of gases must be continuously supplied, can be performed only by switching and adjusting valves.
摘要翻译：目的：为了消除喷嘴的更换和洗涤，并提高CVD装置的可加工性，通过将多个喷嘴提供给晶片提供所需的混合气体并使待引入喷嘴的掺杂气体的种类被区分开来。构成：将期望的混合气体引入到装置20中，其中将晶片放置在热板10上，并从平行布置的多个喷嘴中吹出，形成CVD膜。混合气体包括O 2气，N 2载气，N 2气，SiH 4气和掺杂气体。例如两个喷嘴11a和11b，每个气体的流量被调节。掺杂气体的种类对于每个喷嘴是不同的。例如，N型掺杂气体用于一个喷嘴，P型掺杂气体用于另一个喷嘴。根据要形成的膜的种类，替换（操作）喷嘴euis。在该装置中，只能通过切换和调节阀来执行其中必须连续供应不同类型的气体的工作过程。

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