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1. 发明专利

JPH07186424A MANUFACTURE OF THERMAL HEAD 失效
公开(公告)号：JPH07186424A
公开(公告)日：1995-07-25
申请号：JP33203993
申请日：1993-12-27
申请人： TOSHIBA CORP
发明人： OITOME TERUKI , KITAZAWA YUSUKE , KATAMURA YUKIO , UTSUKA RIYUUICHI
IPC分类号： B41J2/335
摘要： PURPOSE:To improve the durability of a thermal head by a method wherein a ground layer is formed on a heat-resistant resin layer provided on a support base by a bias sputtering method and patterning of a resistor layer and electrode layer are performed on the ground layer. CONSTITUTION:A glazed layer is formed as a heat-insulating layer 2 on a high-resistance support base 1 comprised of alumina in a fixed thickness. Then a heating resistor 3 which is comprised of Ta-SiO2 is formed on the glazed layer 2, a part of the heating resistor layer 3 is opened further and a common electode layer 4 and separate electrode layer 5 which are comprised of Al are formed in a fixed thickness. A protective layer 6 consisting mainly of Si, O, N is formed on an exposed part of the heating resistor layer 3 and the electrode layers 4, 5 in a fixed thickness. An electrode material and protective layer material may be good even if they are the other material without limiting to those and various processes can be used as a forming method and patterning method also.

2. 发明专利

JPH03183567A THERMAL HEAD 失效
公开(公告)号：JPH03183567A
公开(公告)日：1991-08-09
申请号：JP32362589
申请日：1989-12-13
申请人： TOSHIBA CORP
发明人： NAKAMURA OSAMU , OITOME TERUKI , ARAMAKI NARIMITSU
IPC分类号： B41J2/335
摘要： PURPOSE:To suppress production of pin hole at the time of filming, to prevent peel off of protective film itself, to improve weather resistance of the protective film and to obtain a highly reliable thermal head by employing a target containing Si-O-N and CcO2 in the formation of spatter protective film. CONSTITUTION:A protective film 7 for a heating part 4 and an electrode conductor layer 6 having oxidation resistance and abrasion resistance is formed of a spatter film employing a target containing Si-O-N and CcO2. When such an Si-O-N series spatter film is employed as the protective film for a thermal head, peel off of the protective film itself is prevented while furthermore peel off of the film, deposited on the inner wall of a vacuum container, an earth shield face, a jig, and the like, in the form of small chips is also prevented thus suppressing production of pin hole in the protective film due to the exfoliated chips. Furthermore, weather resistance of the Si-O-N series spatter film is improved by adding CcO2.

3. 发明专利

JPS61277463A THERMAL HEAD 失效
公开(公告)号：JPS61277463A
公开(公告)日：1986-12-08
申请号：JP12081285
申请日：1985-06-04
申请人： TOSHIBA CORP
发明人： OITOME TERUKI
IPC分类号： B41J2/335 , H01C7/00
摘要： PURPOSE:To enhance abrasion resistance, chemical stability and cracking resistance, by sequentially laminating a heating resistor layer, an electrode layer provided with an opening part and a protective layer comprising a mixture of silicon nitride and silicon oxide on a high resistance substance. CONSTITUTION:A glaze layer 12 consisting of a glass or the like is provided on the high resistance substance 11 consisting of alumina or the like, and the heating resistor layer 13 consisting of Ta-SiO2 is provided thereon. Next, the electrode layer 14 provided with the opening part 14a so as to expose a part of the layer 13 is provided on the layer 13 by sequentially laminating Cr, Pd, Au and Cr. On the electrode layer 14 and the exposed part of the heating resistor layer 13, the protective layer 15 formed of Si3N4-SiO2, namely, a mixture of silicon nitride and silicon oxide is provided by a sputtering method to obtain a thermal head.

4. 发明专利

JPH04211971A ELECTROSTATIC RECORDER 失效
公开(公告)号：JPH04211971A
公开(公告)日：1992-08-03
申请号：JP3149491
申请日：1991-01-31
申请人： TOSHIBA CORP
发明人： NAGATO KAZUSHI , MATSUMURA YOSHIKUNI , HOSAKA YASUO , NAKAO HIDEYUKI , KOIKE YUZO , HIRAHARA SHUZO , OITOME TERUKI
IPC分类号： B41J2/415 , G03G15/00 , G03G15/05
摘要： PURPOSE:To eliminate the possibility that an electric field between control electrodes may be affected by a leakage electric field by a method wherein first and second control electrodes provided with ion through holes for passing through ions are disposed at a predetermined interval between an ion generator and a dielectric recording medium, and a shielding electrode is provided in the ion generator. CONSTITUTION:An ion generator 20 consists of an insulating substrate 21, a dielectric electrode 22, an insulating material layer 23, an ion generating electrode 24, and a shielding electrode 25 provided through a slit 26. On the other hand, a control substrate 30 consists of an insulating substrate 31 and control electrodes 32 and 33 provided on the both surfaces of the substrate 31, furthermore having a large number of ion through holes 29 provided through said components. An ion flow generated by the ion generator 20 is controlled during a recording time or non-recording time by the control electrodes 32, 33 and by recording dots when passing through the ion through holes 29, thereafter reaching a recording drum 1. The surface of the recording drum 1 precharged with, e.g. negative ions is irradiated with positive ion flow. An electrostatic latent image is formed and developed, and an image recording is obtained.

5. 发明专利

JPS63297066A THERMAL HEAD AND PRODUCTION THEREOF 失效
公开(公告)号：JPS63297066A
公开(公告)日：1988-12-05
申请号：JP13432687
申请日：1987-05-29
申请人： TOSHIBA CORP
发明人： NIKAIDO MASARU , OUCHI YOSHIAKI , KINOSHITA TADAYOSHI , OITOME TERUKI
IPC分类号： B41J2/335
摘要： PURPOSE:To facilitate the control of a value of resistance without imparting a damage to a heat-resistant resin layer and to perform a wire bonding stably, by forming an undercoat layer of silicon oxynitride between the heat-resistant resin layer and heating resistors. CONSTITUTION:A heat-resistant resin layer 10 is formed on a high-heat conductive substrate 9, and on the surface thereof a surface-modifying treatment is applied. On the heat-resistant resin layer 10 treated with the surface- modification, an undercoat layer 11 of silicon oxynitride is formed by a physical evaporating method. On the undercoat layer, a large number of heating resistors 12 and conductors are successively formed. The undercoat layer 11 preferably has a thickness in the range of 500-10000Angstrom . If the thickness is less than 500 1, the heat resistant resin layer cannot be sufficiently protected, and a value of resistance and bonding properties cannot be stabilized; if more than 10000Angstrom , a more effect cannot be obtained, and a longer time is required for forming a film. Since the heating resistors can be formed without generating a gas, a value of resistance is easily controlled. Since the cushion effect of the heat- resistant resin layer is set off by the hardness of the undercoat layer, a wire bonding can be stably performed.

6. 发明专利

JPS6110472A Manufacture of thermal head 失效
标题翻译：热头制造
公开(公告)号：JPS6110472A
公开(公告)日：1986-01-17
申请号：JP13169184
申请日：1984-06-26
申请人： Toshiba Corp
发明人： OITOME TERUKI
IPC分类号： H01L49/00 , B41J2/335 , H01L49/02
CPC分类号： H01L49/02
摘要： PURPOSE:To contrive a reduction in the cost of a thermal head and enhancement of productivity, by a construction wherein ends on one side of heating resistors are connected to a power-supplying common electrode provided in the vicinity of the heating resistors, and a plated layer is provided on the common electrode. CONSTITUTION:A glaze layer 5 having a thickness of 60-80mum is provided on one side of an insulating substrate 4 formed of alumina, and a tantalum oxide layer is provided thereon in a thickness of 0.5-1.0mum as a protective layer 12 for the substrate. Further, a Ta-SiO2 cermet film having a thickness of 0.3- 0.5mum is provided thereon as the heating resistors 6, and a Cu layer with a thickness of 0.12mum, a Pb layer with a thickness of 0.1mum, an Au layer with a thickness of 1.0mum and a Cu layer with a thickness of 0.06mum are sequentially laminated thereon to provide individual electrodes 7 and the common electrode 1. At the part of the common electrode 1, the uppermost Cu layer is removed by etching, and a Cu layer 8 having a thickness of 0.5-20mum is provided on the Au layer by plating.
摘要翻译：目的：为了降低热敏头的成本和提高生产率，通过这样一种结构，其中加热电阻器一侧的端部连接到设置在加热电阻器附近的供电公共电极，并且电镀层设置在公共电极上。构成：在由氧化铝形成的绝缘基板4的一侧上设置厚度为60〜80μm的釉层5，在其上设置厚度为0.5〜1.0μm的氧化钽层作为保护层12 基质。此外，在其上设置厚度为0.3〜0.5μm的Ta-SiO2金属陶瓷膜作为加热电阻器6，厚度为0.12μm的Cu层，厚度为0.1μm的Pb层，具有依次层叠厚度为1.0μm的Cu层和厚度为0.06μm的Cu层，以提供单独的电极7和公共电极1.在公共电极1的一部分，通过蚀刻除去最上层的Cu层，并且通过电镀在Au层上设置厚度为0.5〜20μm的Cu层8。

7. 发明专利

JPH07101090A THERMAL PRINTING HEAD, MANUFACTURE THEREOF AND FORMING METHOD OF THIN FILM 失效
公开(公告)号：JPH07101090A
公开(公告)日：1995-04-18
申请号：JP11772493
申请日：1993-04-21
申请人： TOSHIBA CORP , TOSHIBA ELECTRONIC ENG
发明人： OITOME TERUKI , KITAZAWA YUSUKE , NAKAMURA OSAMU , KANO MICHIKO , MUYA YOSHINORI
IPC分类号： B41J2/335
摘要： PURPOSE:To provide a thermal printing head, by which the re-sputting of a heating resistor layer, the lowering of the insulating performance and the like are prevented from developing and, in addition, a protective layer having favorable step coverage can be formed. CONSTITUTION:In the thermal printing head concerned equipped with a heating resistor layer 3 formed on board 1, an electrode layer 4, in which some part of the heating resistor layer 3 exposes, and a protective layer 5, which is provided so as to cover at least the exposed part of the heating resistor layer 3, the protective layer 5 consists of a layer 6, which is at least formed by a normal sputtering method, and a layer 7, which is formed by bias sputtering or, more concretely, at least made of a Ta2O5 layer, which is formed by bias sputtering under the condition that the amount of oxygen included in a film- forming gas is set to be 0.7% or more of the total gas flow rate.

8. 发明专利

JPS62204967A MANUFACTURE OF THERMAL HEAD 失效
公开(公告)号：JPS62204967A
公开(公告)日：1987-09-09
申请号：JP4770386
申请日：1986-03-05
申请人： TOSHIBA CORP
发明人： OITOME TERUKI
IPC分类号： B41J2/335
摘要： PURPOSE:To obtain a thermal head lowered in cost and enhanced in productivity and quality, by providing a heat generating resistor layer and an electrode layer on a substrate provided with a glaze layer, subjecting the resistor layer and the electrode layer to dry etching through a photoresist by using a fluorine- based gas to provide a wiring pattern, removing a fluorine compound (formed on the photoresist) by a plasma treatment, and subjecting the electrode layer to dry etching through the same photoresist to provide an opening part. CONSTITUTION:A heat generating resistor layer 13 and an electrode layer 14 are provided uniformly and sequentially on a high-resistance substrate 11 pro vided with a glaze layer 12 on a surface thereof. The resistor layer 13 and the electrode layer 14 are subjected to dry etching using a photoresist 16 and, for example, a fluorine-based gas to provide a wiring pattern. A fluorine compound formed on the photoresist 16 is then removed by a plasma treatment. To provide an opening part 14a for exposing a part of the resistor 13, a part of the electrode layer 14 traversing the pattern of the layer 14 is removed by dry etching. In this case, the same photoresist 16 as mentioned above is used.

9. 发明专利

JPH06135035A FABRICATION OF THERMAL HEAD 失效
公开(公告)号：JPH06135035A
公开(公告)日：1994-05-17
申请号：JP29102492
申请日：1992-10-29
申请人： TOSHIBA CORP
发明人： HONMA KATSUHISA , YANAGIBASHI KATSUMI , ARAMAKI NARIMITSU , OITOME TERUKI
IPC分类号： B41J2/335
摘要： PURPOSE:To fabricate a thermal head in which adhesion is enhanced among an electrode film, an underlying film, and a protective film. CONSTITUTION:A resistive film and an electrode film are patterned at first and then the surface, on which a heating resistor 4 and electrodes 5, 6 are formed, is subjected to treatment with an acid containing water by 20vol.% or less or an acid containing any one of phosphate ion, silicate ion, or chromate ion and a protective film is formed thereon. A part of the resistive film is then subjected to dry etching using a halogen based gas and reaction products remaining on the surface of an underlying film 3 or thereabout are removed through wet treatment using an acid or hot water.

10. 发明专利

JPH04105954A MANUFACTURE OF THERMAL HEAD 失效
公开(公告)号：JPH04105954A
公开(公告)日：1992-04-07
申请号：JP22373590
申请日：1990-08-24
申请人： TOSHIBA CORP
发明人： OITOME TERUKI , NAKAMURA OSAMU
IPC分类号： B41J2/335
摘要： PURPOSE:To improve adhesion between a protection layer and a glaze layer and an yield after formation of a protection layer by a method wherein after plasma etching is applied on a heat generating resistor layer by means of mixture gas of carbon fluoride gas and oxide gas, cleaning is effected by using nitric acid. CONSTITUTION:After a heat generating resistor layer 13 of Ta-SiO2 is first formed in a thickness of approximate 1000Angstrom on a glazed alumina base 12, chemical etching is applied by means of mixture gas of 70% CF4 gas and 30% O2 gas. In this case, a gas introduction pressure is set to 0.35Torr, and applying power to 800W, and an etching time to 200 seconds. After the glazed alumina base 12 is immersed in nitric acid of 95% HNO3 for three minutes cleaning by pure water and drying are effected to effect cleaning by using nitric acid. As noted above, by cleaning by nitric acid after execution of plasma etching by mixture gas of CF4 gas and O2 gas, fluorine adsorbed to the glazed layer 12 is removed or decreased, and adhesion between the glazed layer 12 and a protection layer 15 can be improved.

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