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    • 2. 发明专利
    • CATALYTIC COMBUSTION DEVICE
    • JPH06272821A
    • 1994-09-27
    • JP6452693
    • 1993-03-24
    • TOSHIBA CORP
    • KAWABATA YUKAKUBOTA TORUKUMAZAWA KATSUYOSHI
    • F23D11/40
    • PURPOSE:To lower a variable heating lower limit and ensure a sufficient variable range by a method wherein a supplying of fuel is stopped when a lower limit value of combustion capacity of an electrical conductive self-heat generating type catalyst is detected, and the self-heat generating type catalyst is electrically energized. CONSTITUTION:A petroleum stove is provided with a combustion capacity lower limit sensing means for use in sensing a lower limit value of combustion capacity produced by a self-heat generating catalyst 1 having a certain electrical conductivity. In addition, when the lower limit value of combustion capacity is sensed by the combustion capacity lower limit value sensing means, a driving of a fuel pump is stopped and the fuel supplying with a gasification device 7 is stopped, thereby there is provided a control means 21 for electrically energizing the catalyst 1 through an electrode 6. As the combustion capacity lower limit value sensing means, it may be possible to provide means for sensing an amount of supplying fuel by an operation of a fuel pump, for example. With such an arrangement as above, it is possible to lower the variable combustion lower limitation further.
    • 4. 发明专利
    • GAS SENSOR
    • JPH01118759A
    • 1989-05-11
    • JP27680787
    • 1987-10-31
    • TOSHIBA CORP
    • KAWABATA YUKAAWANO HIROSHI
    • G01N27/12
    • PURPOSE:To reduce variance in resistance value by forming >=2 layers of a gas sensing film by using metal oxide semiconductor films. CONSTITUTION:A counter electrode 2 is formed on the surface of an insulating substrate 1 and an electrode pad 8 for a heater is formed on the reverse surface of the substrate 1. The Heater 7 is therefore formed connecting with a pad 8 on the reverse surface of the substrate 1, the sensing film containing an organic metal compound is further printed on the top side, and the metal oxide semiconductor thin film formed by decomposing the organic metal compound thermally is baked as many times as desired to form a metal semiconductor thin film 5. A catalyst thin film 6 is formed on this thin film 5. Thus, >=2 layers of the gas sensing film are formed by using the metal oxide semiconductor film to uniform the characteristics of the gas sensing film and also reduce the variance in resistance value.
    • 5. 发明专利
    • GAS SENSOR
    • JPS63231254A
    • 1988-09-27
    • JP6420487
    • 1987-03-20
    • TOSHIBA CORP
    • KAWABATA YUKAAWANO HIROSHI
    • G01N27/12
    • PURPOSE:To obtain a gas sensor which permits mass production and has good characteristics by printing paste contg. fine metal oxide powder and org. metal compd. and calcining the same. CONSTITUTION:A counter electrode 6, contact pads 9 for the counter electrode as well as contact pads 4 for heating elements are provided on the surface of an insulating substrate 1 such as alumina substrate. A thin metal oxide semiconductor film 7 such as, for example, tin oxide semiconductor film is further formed on the counter electrode 6. A porous metal oxide film 8 is provided atop the thin semiconductor film 7. This porous metal oxide film 8 is formed by printing the paste prepd. by a catalyst deposited with, for example, the oxide of tungsten and copper, ethylhydroxy ethyl cellulose and aluminum resinate with the fine powder of metal oxide such as alumina to a prescribed pattern and calcining the paste after drying.
    • 9. 发明专利
    • GAS SENSOR
    • JPH01250851A
    • 1989-10-05
    • JP7933088
    • 1988-03-31
    • TOSHIBA CORP
    • AWANO HIROSHIKAWABATA YUKA
    • G01N27/12
    • PURPOSE:To obtain such a gas sensor that the forming process of a catalyst film is pure, variance in quality is small, and the catalyst film hardly deteriorates by forming the catalyst film of a burnt body of paste containing carrier powder and resin acid of a platinum group element. CONSTITUTION:A specific pattern for a heating body 5 is formed on an alumina substrate 1 by using mixed film paste of platinum and tungsten, alumina thick film paste is printed thereupon in a film shape, and comb type counter electrodes 2 are printed further thereupon by using gold paste and then baked in a reducible atmosphere to manufacture a ceramic insulating substrate 1. Then, paste obtained by adding turpentine oil to the mixture of 2-ethyl hexanoic acid tin and resin film acid niobium is printed and baked on the counter electrodes 2 on the substrate 1 and then doped to form a tin oxide semiconductor film 3. Then the catalyst film 4 is formed on the semiconductor film 3. Then the gas sensing element where the catalyst film 4 is formed is put in a package to complete the sensor.
    • 10. 发明专利
    • GAS SENSOR
    • JPS6383652A
    • 1988-04-14
    • JP23064986
    • 1986-09-29
    • TOSHIBA CORP
    • KAWABATA YUKAAWANO HIROSHI
    • G01N27/12
    • PURPOSE:To increase the dependency of resistance on gas concn. by providing a catalyst layer formed by coating and calcining alumina powder and paste on a gas sensitive body consisting of a metal oxide semiconductor on an insulating substrate. CONSTITUTION:A heating element 2 consisting of a thick film of platinum system is provided on one face of the insulating substrate 1 and an alumina insulator 3 is provided to a film shape thereon. Through-holes of the insulator 3 are provided in order to form pads on both ends of the element 2. Lead wires 7 are connected to the element 2. Comb-shaped electrodes 4 consisting of a thick film of gold system are provided on the insulator 3 and the gas sensitive body 5 consisting of the metal oxide semiconductor of tin oxide system is formed to the film shape thereon. The catalyst layer 6 formed by coating and calcining the paste contg. the alumina powder deposited thereon with the metal oxide and the org. alumina compd. at 0.02-0.2mol per mol of the alumina in said alumina is provided on the body 5. A gas sensor having such large dependency on gas concn. at which the resistance value of the metal oxide semiconductor is inversely proportional to 0.5-1.0 power of the gas concn. is thereby obtd.