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1. 发明专利

JP2000091708A SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
公开(公告)号：JP2000091708A
公开(公告)日：2000-03-31
申请号：JP26054798
申请日：1998-09-14
申请人： TOSHIBA CORP
发明人： JOHN LENEY
IPC分类号： H01S5/00 , H01S5/34
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can keep barrier effect for overflow of electron from an active layer and reduce barrier working on flow-in of hole to the active layer. SOLUTION: An overflow prevention layer 12 is provided as to work as a barrier to suppress the overflow of electrons injected to an active layer 106 and its barrier working on a hole before injecting electrons to the active layer 106 is released. Specifically, by forming a superlattice where the layer thickness or composition gradually changes or a structure where the composition changes continuously or stepwise, the flow-in of the hole is promoted and the loss of carrier is eliminated so that a semiconductor light emitting element superior in light emitting efficiency can be realized.

2. 发明专利

JPH1154840A SEMICONDUCTOR LIGHT-EMITTING DEVICE 失效
公开(公告)号：JPH1154840A
公开(公告)日：1999-02-26
申请号：JP20440697
申请日：1997-07-30
申请人： TOSHIBA CORP
发明人： JOHN LENEY
IPC分类号： H01L33/06 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/323 , H01S5/343 , H01S3/18 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To obtain the light emission in a wide range, extending from blue to red by incorporating at least one from among Sc, Y and lantanide, actinide element, Zr, Hf, V, Nb and Ta in one of a multilayered construction. SOLUTION: In a semiconductor light-emitting device having an n-Si substrate 1 and a ScGaN/InGaN-superlattice(MQW) active layer 6, the active layer 6 has a NQW structure where barrier layers of Inx Ga1-x N (0

3. 发明专利

JP2001102624A ORGANIC SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
公开(公告)号：JP2001102624A
公开(公告)日：2001-04-13
申请号：JP27322299
申请日：1999-09-27
申请人： TOSHIBA CORP
发明人： JOHN LENEY
IPC分类号： H01L33/30 , H01L33/42 , H01L51/50 , H01S5/30 , H05B33/12 , H05B33/14 , H05B33/26 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To vary the emission wavelength of laser light over a wide range. SOLUTION: The organic semiconductor light emitting device comprises an n-type clad layer 4, an organic active layer 5 formed of an organic material on the n-type clad layer 4, a p-type clad layer 6 formed on the organic active layer 5, an SiO2 block layer 7 formed on the p-type clad layer 6, and a bias contact layer 11 formed of an organic conductive material on the SiO2 block layer 7. Light is generated in the organic active layer 5 by conducting a current between the n-type clad layer 4 and the p-type clad layer 6 and a strain is imparted to the organic active layer 5 by applying a voltage between the n-type clad layer 4 and the bias contact layer 11.

4. 发明专利

JPH1187773A LIGHT EMITTING ELEMENT 失效
公开(公告)号：JPH1187773A
公开(公告)日：1999-03-30
申请号：JP24272897
申请日：1997-09-08
申请人： TOSHIBA CORP
发明人： HATAGOSHI GENICHI , JOHN LENEY
IPC分类号： H01L33/06 , H01L33/12 , H01L33/28 , H01L33/32 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To obtain a light emitting element which enables simultaneous light emission with a plurality of wavelengths with a simple structure and has a brood emission spectrum by providing a plurality of active layers in band gap energy and utilizing carrier overflow. SOLUTION: On a sapphire substrate 10, a GaN buffer layer 11, a n-GaN clad part 12, an InGaN first active layer 13, a p-InGaN first barrier 14, a laminate 15 comprising p-InGaN and a p-GaN clad part 16 are formed. The p-InGaN laminate 15 comprises a plurality of different p-InGaN active layers and p- InGaN barrier layers between the active layers. Their crystal growth is done by a MOCVD method or a MBE method. Parts ranging from the p-GaN clad part to the n-GaN clad part 12 are removed to the middle of the n-GaN clad part except a ridge part, and an n-electrode 17 is formed on an exposed part of the n-GaN clad part and a p-electrode 18 is formed on a part of the p-GaN clad part.

5. 发明专利

JP2002100481A ORGANIC LIGHT-EMITTING ELEMENT 失效
公开(公告)号：JP2002100481A
公开(公告)日：2002-04-05
申请号：JP2000289941
申请日：2000-09-25
申请人： TOSHIBA CORP
发明人： JOHN LENEY , HATAGOSHI GENICHI
IPC分类号： H05B33/22 , H01L51/50 , H05B33/12 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide an organic light-emitting element, capable of efficiently surface emitting the light by injecting an electric current and suitable for a surface emissive laser, and particularly one requiring a high gain characteristic. SOLUTION: This organic light-emitting element has a pair of resonator structures and an organic active layer, sandwiched between the pair of resonator structures and composed of an organic material, capable of surficially emitting the light by injecting the electric current via at least a pair of electrodes.

6. 发明专利

JP2001015865A SEMICONDUCTOR WAVELENGTH CONVERSION DEVICE AND WAVELENGTH CONVERSION METHOD 失效
公开(公告)号：JP2001015865A
公开(公告)日：2001-01-19
申请号：JP18698799
申请日：1999-06-30
申请人： TOSHIBA CORP
发明人： JOHN LENEY
IPC分类号： H01S5/00 , H01S5/323 , H01S5/343 , H01S5/50
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor wavelength conversion device and a wavelength conversion method which have high wavelength conversion efficiency. SOLUTION: A semiconductor wavelength conversion device is equipped with a sapphire substrate 1, an MQW active layer 5 which is formed on the sapphire substrate 1 and has a prescribed band gap E2'-E1', and an optical guide layer 4 having a trap level E2t different in depth from the band gap of the MQW active layer 5, where the optical guide layer 4 is irradiated with light, electrons trapped in the trap level E2t are excited by light to be discharged into the active layer 5, and light of wavelengths correspondent to the band gap E2'-E1' is emitted from the active layer 5.

7. 发明专利

JP2000077786A Semiconductor device and manufacture thereof 审中-公开
标题翻译：半导体器件及其制造
公开(公告)号：JP2000077786A
公开(公告)日：2000-03-14
申请号：JP24290998
申请日：1998-08-28
申请人： Toshiba Corp , 株式会社東芝
发明人： JOHN LENEY
IPC分类号： H01L21/28 , H01S5/00 , H01S5/30 , H01S5/323 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To form a metal electrode which displays ohmic characteristics by a method wherein the metal electrode is equipped with a first layer that contains at least Ga and N as component elements, a metal film, and an interposition layer that contains at least one of elements such as S, Se, Te, As, P, and Hf and is interposed between the first layer and the metal film.
SOLUTION: The surface of a GaN layer is etched by the use of an HF solution to remove an oxide film from it, residual F is removed, an interposition layer 12 is formed, and then a metal electrode is evaporated for the formation of a metal electrode 3 that displays complete ohmic characteristics. F atoms as etching contaminants are removed, whereby only a surface level caused by a surface condition that is naturally present on the surface of a GaN crystal is left on the surface of a contact layer 2, so that a pinning effect is slightly relaxed, but as a crystal has its own intrinsic surface state, the pinning effect cannot be completely removed only by cleaning. Therefore, when Se, Te, As, P, or Hf is used as a terminal atom besides O, a metal electrode that displays perfect ohmic characteristics can be formed.
COPYRIGHT: (C)2000,JPO
摘要翻译：要解决的问题：通过以下方法形成显示欧姆特性的金属电极，其中金属电极配备有至少包含Ga和N作为组分元素的第一层，金属膜和至少含有诸如S，Se，Te，As，P和Hf的元素之一，并且介于第一层和金属膜之间。解决方案：通过使用HF溶液来蚀刻GaN层的表面以从其中除去氧化膜，除去残余F，形成插入层12，然后蒸发金属电极以形成金属显示完整的欧姆特性的电极3。 F原子作为蚀刻污染物被去除，由此只有由天然存在于GaN晶体表面上的表面状态引起的表面水平留在接触层2的表面上，使得钉扎效应稍微放松，但是因为晶体具有其自身的固有表面状态，所以仅通过清洁不能完全去除钉扎效果。因此，除了O以外，当使用Se，Te，As，P或Hf作为末端原子时，可以形成显示完美欧姆特性的金属电极。

8. 发明专利

JPH11274554A P-side electrode of iii-v group compound semiconductor light emitting element and iii-v group compound semiconductor light emitting element 失效
标题翻译： III-V族化合物半导体发光元件和III-V族化合物半导体发光元件的P侧电极
公开(公告)号：JPH11274554A
公开(公告)日：1999-10-08
申请号：JP7892998
申请日：1998-03-26
申请人： Toshiba Corp , 株式会社東芝
发明人： NOZAKI CHIHARU , JOHN LENEY
IPC分类号： H01L33/12 , H01L33/32 , H01L33/40 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To realize a superior reliability without causing the deterioration at a low threshold current and low operating voltage by forming at least one metal layer selected among Mg
x Au
y (x>y) layer, Pt layer, Mo layer and W layer and Au layer on a III-V group compound semiconductor layer.
SOLUTION: On a sapphire substrate 1, layers are grown from a GaN buffer layer 2 to a p-type GaN contact layer 9. A part of the p-type contact layer 9 is covered with a mask, the semiconductor layers 9-3 are partly removed to expose the n-type GaN contact layer 3, the mask is removed, an Mg layer, Au layer, Pt layer and Au layer 12 are sputter-deposited on the p-type contact layer 9 to form a p-side electrode 100, it is heat treated to react Au of the Au layer all with Mg of the Mg layer to form an MgAu layer 10, remaining Mg of the Mg layer diffuses on the p-type contact layer 9 surface and an n-side Au/Ti electrode 13 is formed on the n-type contact layer 3.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：通过形成从Mg x Au y（x> y）层，Pt层，Mo层和W层中选择的至少一种金属层，实现优异的可靠性而不会导致低阈值电流和低工作电压的劣化，以及 Au层在III-V族化合物半导体层上。解决方案：在蓝宝石衬底1上，从GaN缓冲层2生长到p型GaN接触层9。p型接触层9的一部分用掩模覆盖，半导体层9-3 部分去除以露出n型GaN接触层3，除去掩模，在p型接触层9上溅射淀积Mg层，Au层，Pt层和Au层12，形成p侧电极 100处理后，将Au层的Au全部与Mg层的Mg反应，形成MgAu层10，Mg层的剩余Mg扩散到p型接触层9表面，n侧Au / Ti电极13形成在n型接触层3上。

9. 发明专利

JPH11204887A SEMICONDUCTOR DEVICE HAVING LOW RESISTANCE ELECTRODE 失效
公开(公告)号：JPH11204887A
公开(公告)日：1999-07-30
申请号：JP766898
申请日：1998-01-19
申请人： TOSHIBA CORP
发明人： JOHN LENEY , NOZAKI CHIHARU
IPC分类号： H01L21/28 , H01L33/32 , H01L33/36 , H01S5/00 , H01S5/323 , H01S5/343 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To decrease an operating voltage and a threshold current of a GaN based compound semiconductor device, by selecting suitable contact metal, and bonding the metal to a P-GaN contact layer under suitable heat treatment conditions. SOLUTION: An ohmic electrode is composed of Pt contact metal 2 laminated on a P-GaN contact layer 1 and butt metal 3 composed of a thick Au film. The Pt contact metal 2 acts as a barrier to migration of the Au butt metal 3 to the P-type GaN contact layer 1. The Pt contact metal 2 does not act as a diffusion barrier to Ga, so that Ga diffuses from the surface of the P-GaN contact layer 1 to the inside of the Pt film 2. The surface of the P-GaN contact layer 1 where Ga diffuses to the outside and N is excessive acts as an excellent ohmic contact to the Pt contact metal 2, so that improvement effect of ohmic characteristic is remarkably obtained at a heat treatment temperature of 300 deg.C.

10. 发明专利

JPH1154798A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH1154798A
公开(公告)日：1999-02-26
申请号：JP20440597
申请日：1997-07-30
申请人： TOSHIBA CORP
发明人： JOHN LENEY
IPC分类号： H01L29/45 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/40 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To reduce the resistances of metal electrodes through the reduction of surface barriers by reducing the surface levels of GaN contact layers by interposing thickness-controlled high-purity surface oxide films between the GaN contact layers and metal electrodes. SOLUTION: A GaN semiconductor layer provided with an ohmic electrode is constituted of an InGaN multi-quantum well active layer 6, light guide layers 5 and 7 which are respectively formed below and on the active layer 6, clad layers 4 and 8 which are respectively formed below and on the light guide layers 5 and 7, and contact layers 2 and 9 which are respectively formed below and on the clad layers 4 and 8. The semiconductor layers composed of a multilayered structure of GaN crystals is formed on a sapphire substrate 1, but current electrodes 3 and 11 are led out from one side of the laser, because the substrate 1 is made of an insulator. Current electrode structures containing interpose oxide films are respectively applied to the layers between the upper p-type GaN contact layer 9 and a Pt/Au electrode 11 and between the lower n-type GaN contact layer 2 and an Al/Pt/Au electrode 3. Therefore, a highly efficient GaN semiconductor laser having a long service life can be realized, because the operating voltage of the laser can be lowered.

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