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    • 2. 发明专利
    • SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
    • JPH09115911A
    • 1997-05-02
    • JP27119295
    • 1995-10-19
    • TOSHIBA CORP
    • EBITANI TAKASHITOGASAKI TAKASHISHIMIZU SEISABUROTAKAHASHI KUNIAKI
    • H01L21/60H01L21/321
    • PROBLEM TO BE SOLVED: To easily form a barrier metal layer and a solder bump on an electrode pad by the non-plating method by transferring a junction layer including a second metal which can be subjected to solid-phase diffusion with a first metal on an elastic sheet onto a connection pad, causing a solid-phase diffusion reaction between both metals, and joining the junction layer on the connection pad. SOLUTION: A copper foil 5b where gold coating 5a coats one surface of a resin film and nickel layer 5c/metal layer 5d are coated on the other surface in this order is punched. Then, a punched barrier metal lamination body 5 and a connection pad 3 on a semiconductor substrate 1 are aligned and the barrier metal lamination body 5 is transferred onto the connection pad 3 on the semiconductor substrate 1, where the barrier metal lamination body 5 is heated to a temperature where the barrier metal lamination body 5 and the connection pad 3 cannot be melted and a diffusion reaction is generated between the connection pad 3 of the semiconductor substrate 1 and the junction layer 5a consisting of gold coating on the barrier metal layer 5b, thus joining the covering of the barrier metal lamination body 5 on the connection pad 3.
    • 3. 发明专利
    • SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
    • JPH08340000A
    • 1996-12-24
    • JP14490195
    • 1995-06-12
    • TOSHIBA CORP
    • KIZAKI YUKIOMORI MIKIEBITANI TAKASHISAITO MASAYUKIMURAKAMI TAIJUN
    • H01L21/60H01L21/321H01L21/603
    • PURPOSE: To facilitate repairing and provide a highly reliable connection by aligning an interconnection layer with a connecting means through a repairing function layer, temporarily connecting them by heating at the melting point temperature of the low melting point connecting metal or below and forming a reaction layer by the solid-phase diffusion of the interconnection layer and the connecting means. CONSTITUTION: A gold bump 212 is formed on a semiconductor element 211, and a low melting point connecting metal bump is formed on the gold bump 212. Molybdenum/aluminum interconnection 214 is formed on a glass board 213. In a first connecting process (temporary connection), the semiconductor element is heated to the temperature of the melting point of the low melting point connecting metal bump or below to allow press-contact, and all the pads are connected at one time. Then, in a second connecting process (major connection), the semiconductor element is heated to approximately 400 deg.C to allow press-contact and all the pads are connected at one time. A reaction layer is formed by solid-phase diffusion reaction on the interface between the gold bump and the aluminum pad, and electrical and mechanical connection is performed.
    • 10. 发明专利
    • END RING FOR GENERATOR
    • JPH03117340A
    • 1991-05-20
    • JP21648090
    • 1990-08-18
    • TOSHIBA CORP
    • YAMAMOTO MASAOEBITANI TAKASHIKAWAI MITSUOTAJIMA KOICHI
    • H02K3/51
    • PURPOSE:To improve resistance against uniform corrosion, pitting corrosion, gap corrosion and stress corrosion cracking by reducing the amount of carbon and increasing the amount of nitrogen. CONSTITUTION:The title end ring is constituted of a non-magnetic steel containing 12-20weight% of chrome, 13-25weight% of mangan, 0.4weight% or less of carbon, 0.45-1weight% of nitrogen, 5weight% or less of molybdenum and the balance or iron substantially while the total amount of chrome and mangan is higher than 30weight%. The end ring 4 is provided around coil end turns 2 and supporting ring 3 near the end of a rotor shaft 1, for example. Carbon stabilizes the phase of austenite and improves the strength of the ring, however, its excessive addition deteriorates resistance against pitting corrosion and rigidity whereby the upper limit should be 0.4%. It is necessary to add nitrogen exceeding 0.45% in order to improve a strength as well as resistances against pitting corrosion and stress corrosion cracking, however, the upper limit should be 1% in order to increase rigidity.