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    • 2. 发明专利
    • Carbon substrate for coating silicon carbide
    • 用于涂覆碳化硅的碳质基材
    • JPS5756309A
    • 1982-04-03
    • JP12993880
    • 1980-09-17
    • Toshiba Ceramics Co Ltd
    • YAMAZAKI HIROSHIHOSHINA KATSUMIUEJIMA NOBUYUKISASAKI YASUMI
    • C01B31/02C04B35/56
    • PURPOSE: To obtain improved spalling resistance and to prevent the occurrence of cracks and peeling by specifying the porosity and pore size of a carbon substrate for coating silicon carbide.
      CONSTITUTION: A carbon substrate having 5W30% porosity and contg. no pore having ≥100μm size and 0.04W0.1cc/g pores having 0.1W10μm size measured with a mercury porosimeter is used. When this substrate is coated with silicon carbide, a structure composed of an outer surface layer 1 of silicon carbide alone, an intermediate layer 2 of a mixture of silicon carbide with carbon, and a carbon substrate layer 3 is obtd., and by using said carbon substrate as the layer 3, the layer 2 is formed in a uniform thickness, and the layer 1 is also formed in a uniform thickness almost in parallel with the layer 2.
      COPYRIGHT: (C)1982,JPO&Japio
    • 目的:通过确定用于涂覆碳化硅的碳基板的孔隙率和孔径,获得改善的耐剥离性并防止产生裂缝和剥离。 构成:具有5-30%孔隙率的碳衬底, 使用具有≥100μm尺寸的孔和使用用水银孔率计测量的具有0.1-10μm尺寸的0​​.04-0.1cc / g孔。 当该基板涂覆有碳化硅时,由单独的碳化硅外表层1,碳化硅与碳的混合物的中间层2和碳基底层3组成的结构是可以实现的,并且通过使用所述 碳基板作为层3,层2形成为均匀的厚度,层1也形成为与层2几乎平行的均匀厚度。