专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2006107010A2 POSITIVE PHOTORESIST COMPOSITION, THICK FILM PHOTORESIST LAMINATE, METHOD FOR PRODUCING THICK FILM RESIST PATTERN, AND METHOD FOR PRODUCING CONNECTING TERMINAL 审中-公开
标题翻译：积极光电组合物，厚膜光电陶瓷层压板，生产厚膜电阻图案的方法和生产连接端子的方法
公开(公告)号：WO2006107010A2
公开(公告)日：2006-10-12
申请号：PCT/JP2006/307021
申请日：2006-03-28
申请人： TOKYO OHKA KOGYO CO., LTD. , MISUMI, Koichi , WASHIO, Yasushi , SENZAKI, Takahiro , SAITO, Koji
发明人： MISUMI, Koichi , WASHIO, Yasushi , SENZAKI, Takahiro , SAITO, Koji
CPC分类号： G03F7/0045 , G03F7/0397 , H01L24/11 , H01L24/13 , H01L2224/1146 , H01L2224/1147 , H01L2224/131 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/81192 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/15747 , H01L2924/15788 , H01L2924/3025 , H05K3/0076 , H05K3/0079 , H05K3/3452 , H01L2924/00014 , H01L2924/00
摘要： This positive photoresist composition is a positive photoresist composition for exposing to light having one or more wavelengths selected from g-rays, h-rays and i-rays, comprising: (A) a compound which generates an acid under irradiation with active rays or radiation, and (B) a resin whose solubility in an alkali is enhanced by an action of an acid, wherein the component (A) contains an onium salt (A1) having a naphthalene ring in the cation moiety.
摘要翻译：该正性光致抗蚀剂组合物是用于暴露于选自g射线，h射线和i射线的一种或多种波长的光的正性光致抗蚀剂组合物，其包含：（A）在用活性射线或辐射照射下产生酸的化合物（B）通过酸的作用使在碱中的溶解度增强的树脂，其中，成分（A）在阳离子部分含有具有萘环的鎓盐（A1）。

2. 发明申请

WO2006003757A1 METHOD OF FORMING PLATED PRODUCT USING NEGATIVE PHOTORESIST COMPOSITION AND PHOTOSENSITIVE COMPOSITION USED THEREIN 审中-公开
标题翻译：使用负离子光刻胶组合物形成镀层产品的方法及其使用的感光组合物
公开(公告)号：WO2006003757A1
公开(公告)日：2006-01-12
申请号：PCT/JP2005/008846
申请日：2005-05-10
申请人： TOKYO OHKA KOGYO CO., LTD. , MASUDA, Yasuo , WASHIO, Yasushi , SAITO, Koji
发明人： MASUDA, Yasuo , WASHIO, Yasushi , SAITO, Koji
IPC分类号： G03F7/00
CPC分类号： G03F7/0035 , G03F7/0382 , G03F7/095 , H05K3/243 , H05K2203/0577 , H05K2203/1105 , H05K2203/1476
摘要： A method is provided that enables the formation of multiple level plated products with large plating depth. A negative photoresist composition comprising (a) an alkali-soluble resin, (b) an acid generator, and (c) other components is used, and a plated product is formed by (A) a step of forming a layer of this negative photoresist composition, and then either heating or not heating, before conducting exposure; (B) a step of repeating the step (A) so that the step is performed a total of 2 or more times, thereby superimposing layers of the negative photoresist, and subsequently developing all of these layers simultaneously to form a multilayer resist pattern; and (C) a step of conducting plating treatment within this multilayer resist pattern.
摘要翻译：提供了能够形成具有大电镀深度的多层镀层产品的方法。使用包含（a）碱溶性树脂，（b）酸产生剂和（c）其它组分）的负性光致抗蚀剂组合物，并且通过（A）形成该负性光致抗蚀剂层的步骤形成镀覆产物组成，然后加热或不加热，然后进行曝光; （B）重复步骤（A）的步骤，使步骤总共进行2次以上，由此叠加负性光致抗蚀剂层，随后同时显影所有这些层以形成多层抗蚀剂图案; 和（C）在该多层抗蚀剂图案内进行电镀处理的工序。

3. 发明申请

WO2006059747A1 PROCESS FOR PRODUCING RESIST PATTERN AND CONDUCTOR PATTERN 审中-公开
标题翻译：生产电阻图案和导体图案的方法
公开(公告)号：WO2006059747A1
公开(公告)日：2006-06-08
申请号：PCT/JP2005/022242
申请日：2005-11-28
申请人： TOKYO OHKA KOGYO CO., LTD. , MISUMI, Koichi , SAITO, Koji , ISHIKAWA, Kaoru
发明人： MISUMI, Koichi , SAITO, Koji , ISHIKAWA, Kaoru
IPC分类号： G03F7/11 , G03F7/039
CPC分类号： H05K3/108 , G03F7/0397 , G03F7/11 , H05K3/384 , H05K2201/0317
摘要： This process for producing a resist pattern includes: the step of laminating (a) a support having an upper surface on which copper exists, (b) an inorganic substance layer consisting of an inorganic substance supplied from an inorganic substance source, and (c) a photoresist layer consisting of a chemically amplified type positive photoresist composition, to obtain a photoresist laminate, the step of selectively irradiating active light or radioactive rays to said photoresist laminate, and the step of developing said (c) photoresist layer together with said (b) inorganic substance layer to form a resist pattern.
摘要翻译：制造抗蚀剂图案的方法包括：（a）具有铜的上表面的载体的层叠步骤，（b）由无机物质源供给的无机物质构成的无机物质层，（c）由化学放大型正性光致抗蚀剂组合物构成的光致抗蚀剂层，以获得光致抗蚀剂层压体，选择性地向所述光致抗蚀剂层压体照射活性光或放射线的步骤，以及将所述（c）光致抗蚀剂层与所述（b ）无机物层形成抗蚀剂图案。

4. 发明申请

WO2004111730A2 DEVELOPER COMPOSITION FOR RESISTS AND METHOD FOR FORMATION OF RESIST PATTERN 审中-公开
标题翻译：用于形成电阻图案的电阻和方法的开发组合物
公开(公告)号：WO2004111730A2
公开(公告)日：2004-12-23
申请号：PCT/JP2004/008508
申请日：2004-06-10
申请人： TOKYO OHKA KOGYO CO., LTD. , WASHIO, Yasushi , SAITO, Koji
发明人： WASHIO, Yasushi , SAITO, Koji
IPC分类号： G03F7/00
CPC分类号： G03F7/322
摘要： To provide a developer composition for resists, capable of improving dimensional controllability of a resist pattern. The developer composition for resists comprises an organic quaternary ammonium base as a main component, said developer composition further comprising an anionic surfactant represented by the following general formula (I), and SO 4 2- the content of S0 4 2- being from 0.01 to 1% by mass. Formula (I). In the formula, at least one of R l and R 2 represents an alkyl or alkoxy group having 5 to 18 carbon atoms and the other one represents a hydrogen atom, or an alkyl or alkoxy group having 5 to 18 carbon atoms, and at least one of R 3 , R 4 and R 5 represents an ammonium sulfonate group or a sulfonic acid-substituted ammonium group and the others represent a hydrogen atom, an ammonium sulfonate group or a sulfonic acid-substituted ammonium group.
摘要翻译：提供能够提高抗蚀剂图案的尺寸可控性的抗蚀剂用显影剂组合物。用于抗蚀剂的显影剂组合物包含有机季铵碱作为主要成分，所述显影剂组合物还包含由以下通式（I）表示的阴离子表面活性剂，SO 4 2-的含量来自 0.01〜1质量％。式（I）。在该式中，R 1和R 2中的至少一个表示具有5至18个碳原子的烷基或烷氧基，另一个表示氢原子或具有5至18个碳原子的烷基或烷氧基， R3，R4和R5表示磺酸铵基或磺酸取代的铵基，其余的表示氢原子，磺酸铵基或磺酸取代的铵基。

5. 发明申请

WO2005054951A2 THICK FILM PHOTORESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 审中-公开
标题翻译：厚膜光刻胶组合物和形成耐蚀图案的方法
公开(公告)号：WO2005054951A2
公开(公告)日：2005-06-16
申请号：PCT/JP2004/017534
申请日：2004-11-18
申请人： TOKYO OHKA KOGYO CO., LTD. , WASHIO, Yasushi , SAITO, Koji
发明人： WASHIO, Yasushi , SAITO, Koji
IPC分类号： G03F7/00
CPC分类号： G03F7/033 , G03F7/405 , Y10S430/106 , Y10S430/114
摘要： A negative thick film photoresist composition with improved alkali developability is provided. The composition comprises: (A) a resin component containing (a) from 61 to 90% by weight of a structural unit derived from a cyclic alkyl (meth)acrylate ester, and (b) a structural unit derived from a radical polymerizable compound containing a hydroxyl group, (B) a polymerizable compound containing at least one ethylenic unsaturated double bond, (C) a photopolymerization initiator, and (D) an organic solvent.
摘要翻译：提供了具有改善的碱显影性的负厚膜光致抗蚀剂组合物。该组合物包含：（A）含有（a）61〜90重量％的衍生自（甲基）丙烯酸环状烷基酯的结构单元的树脂成分，（b）衍生自含有羟基，（B）含有至少一个烯属不饱和双键的聚合性化合物，（C）光聚合引发剂，（D）有机溶剂。

6. 发明申请

WO2005001578A2 DEVELOPER COMPOSITION FOR RESISTS AND METHOD FOR FORMATION OF RESIST PATTERN 审中-公开
标题翻译：开发商的成员组成和抗体模式的形成方法
公开(公告)号：WO2005001578A2
公开(公告)日：2005-01-06
申请号：PCT/JP2004/009077
申请日：2004-06-22
申请人： TOKYO OHKA KOGYO CO., LTD. , WASHIO, Yasushi , SAITO, Koji
发明人： WASHIO, Yasushi , SAITO, Koji
IPC分类号： G03F7/32
CPC分类号： G03F7/322
摘要： A developer composition for resists which has a high dissolution rate (high developing sensitivity). The developer composition for resists is a developer composition for resists, comprising an organic quaternary ammonium base as a main component and a surfactant, said surfactant containing an anionic surfactant represented by the following general formula (I), wherein at least one member of R 1 and R 2 represents an alkyl or alkoxy group having 5 to 18 carbon atoms and any reminder member represents a hydrogen atom, or an alkyl or alkoxy group having 5 to 18 carbon atoms, and at least one member of R 3 , R 4 and R 5 represents a group represented by the general formula (II), wherein M represents a metal atom, and any reminder member represents a hydrogen atom or a group represented by the general formula (II).
摘要翻译： <溶剂>具有高溶解速率（高显影敏感性）的抗蚀剂显影剂组合物。用于抗蚀剂的显影剂组合物是用于抗蚀剂的显影剂组合物，其包含有机季铵碱作为主要组分和表面活性剂，所述表面活性剂含有由以下通式（I）表示的阴离子表面活性剂，其中R < R 1和R 2表示具有5-18个碳原子的烷基或烷氧基，并且任何提示成员表示氢原子或具有5-18个碳原子的烷基或烷氧基并且R 3，R 4和R 5中的至少一个表示由通式（II）表示的基团，其中M 表示金属原子，并且任何提示成员表示氢原子或由通式（II）表示的基团。

7. 发明申请

WO2006059757A2 PROCESS FOR PRODUCING RESIST PATTERN AND CONDUCTOR PATTERN 审中-公开
标题翻译：生产电阻图案和导体图案的方法
公开(公告)号：WO2006059757A2
公开(公告)日：2006-06-08
申请号：PCT/JP2005/022255
申请日：2005-11-29
申请人： TOKYO OHKA KOGYO CO., LTD. , MISUMI, Koichi , SAITO, Koji , ISHIKAWA, Kaoru
发明人： MISUMI, Koichi , SAITO, Koji , ISHIKAWA, Kaoru
CPC分类号： G03F7/0382 , G03F7/11 , H05K3/108 , H05K3/384 , H05K2201/0317
摘要： This process for producing a resist pattern is a process for producing a resist pattern including: the step of laminating (a) a support having an upper surface on which copper exists, (b) an inorganic substance layer consisting of an inorganic substance supplied from an inorganic substance source, and (c) an photoresist layer consisting of a chemically amplified type negative photoresist composition, to obtain a photoresist laminate, the step of selectively irradiating active light or radioactive rays to the photoresist laminate, and the step of developing the (c ) photoresist layer together with the (b) inorganic substance layer to form a resist pattern.
摘要翻译：制造抗蚀剂图案的方法是一种抗蚀剂图案的制造方法，包括以下步骤：层叠（a）具有铜的上表面的载体，（b）由无机物质层构成的无机物质层，无机物质源，和（c）由化学放大型负性光致抗蚀剂组合物构成的光致抗蚀剂层，以获得光致抗蚀剂层压体，选择性地将光或放射线照射到光致抗蚀剂层压体上的步骤，以及（c ）光致抗蚀剂层与（b）无机物质层一起形成抗蚀剂图案。

8. 发明授权

EP1761823B1 METHOD OF FORMING PLATED PRODUCT USING NEGATIVE PHOTORESIST COMPOSITION 有权
标题翻译：的制造包层产品使用负光处理抗蚀剂组合物
公开(公告)号：EP1761823B1
公开(公告)日：2011-12-21
申请号：EP05738524.7
申请日：2005-05-10
申请人： TOKYO OHKA KOGYO CO., LTD.
发明人： MASUDA, Yasuo , WASHIO, Yasushi , SAITO, Koji
IPC分类号： G03F7/00 , G03F7/095 , H01L21/48 , H05K3/46
CPC分类号： G03F7/0035 , G03F7/0382 , G03F7/095 , H05K3/243 , H05K2203/0577 , H05K2203/1105 , H05K2203/1476
摘要： A method is provided that enables the formation of multiple level plated products with large plating depth. A negative photoresist composition comprising (a) an alkali-soluble resin, (b) an acid generator, and (c) other components is used, and a plated product is formed by (A) a step of forming a layer of this negative photoresist composition, and then either heating or not heating, before conducting exposure; (B) a step of repeating the step (A) so that the step is performed a total of 2 or more times, thereby superimposing layers of the negative photoresist, and subsequently developing all of these layers simultaneously to form a multilayer resist pattern; and (C) a step of conducting plating treatment within this multilayer resist pattern.

10. 发明授权

EP1634126B1 DEVELOPER COMPOSITION FOR RESISTS AND METHOD FOR FORMATION OF RESIST PATTERN 有权
标题翻译：显影剂组合物，用于生产抗蚀图案的光刻胶和方法
公开(公告)号：EP1634126B1
公开(公告)日：2013-11-27
申请号：EP04736591.1
申请日：2004-06-10
申请人： TOKYO OHKA KOGYO CO., LTD.
发明人： WASHIO, Yasushi , SAITO, Koji
IPC分类号： G03F7/32
CPC分类号： G03F7/322

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式